| Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026) |
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| 06/24/2004 | US20040119065 Semiconductor device and semiconductor device data write method |
| 06/24/2004 | CA2507625A1 Particles |
| 06/23/2004 | EP1430484A2 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same |
| 06/22/2004 | US6754100 High output nonvolatile magnetic memory |
| 06/22/2004 | US6754055 Giant magneto-resistive effect element having small leakage current, magneto-resistive effective type head having small-leakage current, thin-film magnetic memory having small leakage current and thin-film magnetic sensor having small leakage current |
| 06/22/2004 | US6754054 Spin valve read element using a permanent magnet to form a pinned layer |
| 06/22/2004 | US6754053 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus |
| 06/22/2004 | US6754048 Multiple magnetoresistive (MR) layer sensor element having longitudinal bias layers with non-parallel magnetizations |
| 06/22/2004 | US6753192 Preparation of ultrathin magnetic layer on semiconductors |
| 06/17/2004 | US20040115839 Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same |
| 06/17/2004 | US20040115481 Magnetic storage media having tilted magnetic anisotropy |
| 06/17/2004 | US20040115461 Method of manufacturing the magnetic film having a multiple-axis |
| 06/17/2004 | US20040114285 Magnetoresistive head |
| 06/17/2004 | US20040112469 Method for defining reference magnetizations in layer systems |
| 06/16/2004 | EP1428269A1 Antiparallel magnetoresistive memory cells |
| 06/16/2004 | CN1154199C Magnetostatic wave element and its manufacturing method |
| 06/15/2004 | US6751074 Magnetic memory having antiferromagnetically coupled recording layer |
| 06/15/2004 | US6751073 Tunneling magnetoresistive element and method of manufacturing the same |
| 06/15/2004 | US6750068 Method of fabricating a magnetic element with an improved magnetoresistance ratio with an antiparallel top and bottom pinned ferromagnetic layer |
| 06/10/2004 | WO2004032120B1 Magnetic storage media having tilted magnetic anisotropy |
| 06/10/2004 | US20040110035 High density magnetic recording medium using FePtC thin film and manufacturing method thereof |
| 06/10/2004 | US20040109350 Spin driven resistors and nanogates |
| 06/09/2004 | CN1503912A Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using same |
| 06/09/2004 | CN1503230A Magneto-resistance device, sensor apparatus using sand and method for making same |
| 06/09/2004 | CN1503229A Magneto-resistance effect element, magnetic memory and magnetic head |
| 06/09/2004 | CN1503001A Magnetic sensor and mfg method, magnet array adapted to said method |
| 06/08/2004 | US6747853 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system |
| 06/08/2004 | US6747301 Spin dependent tunneling barriers formed with a magnetic alloy |
| 06/03/2004 | WO2004024836A3 Alignable diffractive pigment flakes |
| 06/03/2004 | US20040105305 High output nonvolatile magnetic memory |
| 06/03/2004 | US20040105195 Spin valve transistor with stabilization and method for producing the same |
| 06/03/2004 | US20040105194 Spin valve transistor with stabilization and method for producing the same |
| 06/03/2004 | US20040104415 Semiconductor array |
| 06/03/2004 | DE10354444A1 Magnetic sensor arrangement for a rotational sensor in a vehicle, comprises a device with a magnetic impedance for acquiring a magnetic field arranged on a semiconductor substrate |
| 06/02/2004 | EP1423861A1 Magnetoresistive device and electronic device |
| 06/02/2004 | CN1501523A Magnetic tunnel junction device and method for fabricating the same |
| 06/02/2004 | CN1501458A Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
| 06/02/2004 | CN1152160C Method for manufacturing dimorphic crystal group magnetic recording medium |
| 06/01/2004 | US6744086 Current switched magnetoresistive memory cell |
| 06/01/2004 | US6743642 Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
| 06/01/2004 | US6743465 Magnetic optical member with a polymer substrate |
| 05/27/2004 | US20040101978 Method of forming a barrier layer of a tunneling magnetoresistive sensor |
| 05/27/2004 | US20040101702 Magnetic tunnel junction device and method for fabricating the same |
| 05/27/2004 | US20040100855 Magneto-resistance effect element, magnetic memory and magnetic head |
| 05/27/2004 | US20040100820 Electron spin mechanisms for inducing magnetic-polarization reversal |
| 05/27/2004 | US20040099919 Magnetic component |
| 05/26/2004 | CN1499520A Ferromagnetic layer for magnetoresistance component |
| 05/25/2004 | US6741496 Electron spin mechanisms for inducing magnetic-polarization reversal |
| 05/25/2004 | US6741495 Magnetic memory device and magnetic substrate |
| 05/25/2004 | US6741434 Magnetic sensor and production method thereof, ferromagnetic tunnel junction element, and magnetic head |
| 05/25/2004 | US6741433 Magneto-resistive head and magnetic tunnel junction magneto-resistive head having plural ferromagnetic layers and an anitferromagnetically coupling layer |
| 05/25/2004 | US6741429 Ion beam definition of magnetoresistive field sensors |
| 05/25/2004 | US6740398 Magnetic films including iridium, manganese and nitrogen |
| 05/25/2004 | US6740397 Subseedlayers for magnetic recording media |
| 05/21/2004 | WO2004042752A1 Method for producing ferromagnetic material, said material and its use |
| 05/21/2004 | WO2004042735A1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology |
| 05/20/2004 | US20040095801 Thermally-assisted magnetic writing using an oxide layer and current-induced heating |
| 05/20/2004 | US20040095690 Method of simultaneously initializing two antiferromagnetic layers in a magnetic sensor |
| 05/20/2004 | US20040095689 Method of making a solid state inductor |
| 05/19/2004 | EP1419506A2 Control device for reversing the direction of magnetisation without an external magnetic field |
| 05/19/2004 | CN1150657C Magnetostatic wave device |
| 05/19/2004 | CN1150570C Soft mangnetic film and method of manufacturing the same |
| 05/19/2004 | CN1150557C Stable magnetic-resistance storage element with magnetic force |
| 05/13/2004 | WO2004040665A2 Etch-stop material for improved manufacture of magnetic devices |
| 05/13/2004 | US20040091745 Coercive force; suppressed inverse magnetic domain; die residual magnetic flux density |
| 05/13/2004 | US20040091743 Regulating saturation lambda s; stability; thinness; sensi-tivity |
| 05/13/2004 | US20040090850 Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus |
| 05/13/2004 | US20040090844 Multi-bit magnetic memory cells |
| 05/13/2004 | US20040090718 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region |
| 05/12/2004 | EP1418597A1 Method for producing ferromagnetic garnet material, garnet material and its use |
| 05/12/2004 | EP1417690A1 Layer system having an increased magnetoresistive effect and use of the same |
| 05/12/2004 | CN1149578C Magnetoresistive element and use of same as storage element in storage system |
| 05/11/2004 | US6735059 Magnetoresistive effective type element, thin film magnetic head, magnetic head device and magnetic disk driving device which use said magnetoresistive effective type element which includes at least three shielding films |
| 05/11/2004 | US6733587 Process for fabricating an article comprising a magneto-optic garnet material |
| 05/06/2004 | US20040087039 Two-step magnetic tunnel junction stack deposition |
| 05/06/2004 | US20040087038 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology |
| 05/06/2004 | US20040087037 Etch-stop material for improved manufacture of magnetic devices |
| 05/06/2004 | US20040086751 GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer and method of manufacturing the detecting element |
| 05/06/2004 | US20040086750 Antiferromagnetic layer system and methods for magnectically storing data in anti-ferromagnetic layer system of the like |
| 05/06/2004 | US20040085803 Magnetic thin film element, memory element using the same, and methd for recording and reproducing using the memory element |
| 05/06/2004 | US20040085689 Method and apparatus for improving soft magnetic properties of a spin valve while retaining high giant magnetoresistance |
| 05/06/2004 | US20040085687 Ferromagnetic layer for magnetoresistive element |
| 05/06/2004 | EP1416530A2 Treatment of a tunnel barrier layer |
| 05/06/2004 | EP1416504A2 Ferromagnetic layer for magnetoresistive element |
| 05/06/2004 | EP1416495A1 Treatment of a tunnel barrier layer |
| 05/06/2004 | EP1415952A1 FRACTAL STRUCTURE AND ITS PRODUCING METHOD, FUNCTIONAL MATERIAL AND ITS PRODUCING METHOD, AND FUNCTIONAL DEVICE AND ITS PRODUCING METHOD |
| 05/05/2004 | CN1494091A Magnetic body, apparatus using the same and its mfg. method |
| 05/04/2004 | US6731479 Spin-valve thin-film magnetic element with a ferromagnetic underlayer of hard bias |
| 05/04/2004 | US6730949 Magnetoresistance effect device |
| 05/04/2004 | US6730395 Magnetic tunnel junction using nanoparticle monolayers and applications therefor |
| 04/29/2004 | US20040082201 Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
| 04/29/2004 | US20040080876 Magnetoresistive element, magnetic head, magnetic memory and magnetic recording apparatus using the same |
| 04/29/2004 | US20040080874 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film |
| 04/29/2004 | US20040080868 Electroplated magnetic thin film, method of manufacturing the same, electroplating bath and thin film magnetic head |
| 04/28/2004 | EP1219731B1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF |
| 04/28/2004 | CN1492452A Magnetic consumption material and its producing method |
| 04/28/2004 | CN1147884C Magnetic head and magnetic storage device with said magnetic head |
| 04/27/2004 | US6728132 Synthetic-ferrimagnet sense-layer for high density MRAM applications |
| 04/27/2004 | US6728081 Magnetic head and magnetic disk apparatus |
| 04/27/2004 | US6727105 Method of fabricating an MRAM device including spin dependent tunneling junction memory cells |