Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
01/2003
01/09/2003US20030008416 Magnetoresistive device and method of producing the same
01/09/2003US20030008178 Magnetic thin film media with a pre-seed layer of CrTi
01/09/2003US20030007398 Current switched magnetoresistive memory cell
01/09/2003US20030006764 Tunneling magnetoresistive effect device and direction sensor system using said device
01/09/2003US20030005575 Manufacturing method of magnetoresistive effect sensor and manufacturing method of thin-film magnetic head
01/08/2003CN1389870A Magnetic resistance element, storage element using same and relative recording/reproducing method
01/08/2003CN1098522C Multilayer film material system
01/07/2003US6504688 Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same
01/07/2003US6504469 Grain boundary formed at a misorientation angle; colossal magnetoresistive (CMR) properties
01/07/2003US6504197 Magnetic memory element and magnetic memory using the same
01/03/2003WO2003000490A2 Method for producing and magnetising a bitumen film containing magnetic powder
01/03/2003WO2002025749A3 Magnetic layer system and a component comprising such a layer system
01/02/2003US20030003704 Underlayer made of a III-V semiconductor compound is formed on a substrate, and a chromium-antimony (crsb) compound is epitaxially grown by molecular beam epitaxy; ferromagnetic layer
01/02/2003US20030003325 Soft magnetic thin film and thin film magnetic head using the same
01/02/2003US20030003316 Rolled and annealed compacted and sintered powder-metallurgy nickel alloy preform having a magnetism and a Curie temperature less than pure Ni
01/02/2003US20030002330 Magnetoresistive element and MRAM using the same
01/02/2003US20030002228 Magnetic head
01/02/2003US20030002227 Magnetic multilayered films with reduced magnetostriction
01/02/2003US20030001154 Polymer-, organic-, and molecular-based spintronic devices
01/02/2003EP1271569A2 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure
01/02/2003EP1269492A1 Magnetic element with an improved magnetoresistance ratio
01/02/2003EP1269491A2 Multi-layer tunneling device with a graded stoichiometry insulating layer
01/02/2003EP1268087A2 Nanocylinder arrays
01/01/2003CN1388838A Titanium dioxide cobalt magnetic film and its manufacturing method
12/2002
12/31/2002US6501678 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems
12/31/2002US6501143 Spin-valve transistor
12/31/2002US6500570 Multilayer; antiferromagnetic layer, magnetic layer, nonmagnetic layer
12/31/2002US6500497 Method of magnetically patterning a thin film by mask-controlled local phase transition
12/26/2002US20020196658 Magnetic recording element, magnetic memory, magnetic recording method, method for a fabricating a magnetic recording element, and method for a fabricating a magnetic memory
12/26/2002US20020196590 Spin-valve thin film magnetic element and thin film magnetic head
12/25/2002CN1387195A Magnetic recording element, magnetic memory, magnetic recording method, and method for mfg. magnetic recording element and method for mfg. magnetic memory
12/24/2002US6498707 Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer
12/19/2002WO2002101750A2 Digital magnetic storage cell device
12/19/2002WO2002101406A1 Magneto-resistive layer arrangement and gradiometer with said layer arrangement
12/19/2002US20020192503 Thin film magnetic head and method of fabricating the head
12/19/2002US20020192502 High coercive force and residual magnetic flux density by controlling metallurgical microstructure; rotating machine and magnetic recording medium; anisotropy; alternating layers of refractory metal and magnetic rare earth alloy
12/19/2002US20020191451 Magnetoresistance effect device
12/19/2002US20020191356 Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same
12/19/2002US20020191355 Magnetoresistive element and method for producing the same
12/19/2002US20020191354 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
12/19/2002US20020191353 Magnetic sensing element having no variation in track width and capable of properly complying with track narrowing
12/19/2002US20020191348 Dual spin-valve thin-film magnetic element
12/19/2002US20020190713 Magnetic device
12/19/2002US20020190291 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
12/19/2002DE10128262A1 Magnetic field detector has an array of magnetoresistive sensors with artificial anti-ferromagnetic reference layers and magnetic layers arranged to suppress domain formation and increase resistance to external fields
12/19/2002DE10128135A1 Magneto-resistive layer arrangement used in a GMR sensor element, an AMR sensor element or a gradiometer comprises a non-magnetic electrically conducting intermediate layer arranged between magnetic layers, and a hard magnetic layer
12/18/2002EP1119860B1 Magnetoresistive memory having improved interference immunity
12/18/2002EP1112575B1 Magnetoresistive element and use of same as storage element in a storage system
12/18/2002EP1105890B1 Magnetoresistive element and the use thereof as storage element in a storage cell array
12/18/2002CN1096690C Magnetoresistance material and magnetoresistor film
12/17/2002US6496338 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias
12/17/2002US6495873 Magnetoresistive element and use thereof as a memory element in a memory cell configuration
12/17/2002US6495275 Multi-layered thin-film functional device and magnetoresistance effect element
12/17/2002US6495019 Device comprising micromagnetic components for power applications and process for forming device
12/17/2002US6494092 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
12/12/2002WO2002099906A1 Magnetoresistance element and magnetoresistance storage element and magnetic memory
12/12/2002WO2002099905A1 Tunnel magnetoresistance element
12/12/2002WO2002099451A2 Semimanufacture for a sensor for measuring a magnetic field
12/12/2002US20020187369 Magnetic information recording medium
12/12/2002US20020187257 Thin film polycrystaline matrix of grains of a ferromagnetic substance surrounded by clusters of atoms of a non-magnetic substance, formed by simultaneous deposition
12/12/2002US20020186582 Cladded read conductor for a pinned-on-the-fly soft reference layer
12/12/2002US20020186506 Magnetic recording medium and magnetic recording apparatus using same
12/12/2002DE10160637A1 Fahrzeugmontiertes Magnetoresistenz-Sensorelement Vehicle Mount magnetoresistive sensor element
12/12/2002DE10128154A1 Digital magnetic storage cell arrangement used for reading and writing operations comprises a soft magnetic reading and/or writing layer system, and a hard magnetic reference layer system formed as an AAF system
12/11/2002EP1265249A2 Magneto-resistance effect film and memory using it
12/10/2002US6493195 Magnetoresistance element, with lower electrode anti-erosion/flaking layer
12/05/2002US20020182324 Method of producing ferrite thin film
12/05/2002US20020181275 Data register and access method thereof
12/05/2002US20020181173 Magnetoresistive head and manufacturing method therefor
12/05/2002US20020181170 Trilayer seed layer structure for spin valve sensor
12/05/2002US20020181168 Read head with tunnel junction sensor and non-shunting hard bias stabilization
12/05/2002US20020180433 Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field
12/05/2002US20020180432 Transpinnor-based switch and applications
12/04/2002EP1262992A2 Magnetic recording element, magnetic memory, magnetic recording method, method for fabricating a magnetic recording element, and method for fabricating a magnetic memory
12/04/2002EP1262957A2 Magnetoresistive head and manufacturing method therefor
12/04/2002CN1383166A Granular queueing body, its mfg. method and device using such queuecing body
12/03/2002US6490140 Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer
12/03/2002US6490131 Thin film magnetic head with electroplated Ni-Fe alloy thin film having small average crystal grain size range
12/03/2002US6488908 Spinel ferrite thin film and method of manufacturing the same
11/2002
11/28/2002WO2002095434A1 Magnetic sensor based on ballistic magnetoresistance using a pinhole multilayer system
11/28/2002US20020177013 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
11/28/2002US20020177012 Perpendicular magnetic recording medium and a magnetic reproducing apparatus
11/28/2002US20020176213 Magnetoresistive head
11/28/2002US20020175803 Vehicle-mounted magnetoresistive sensor element
11/27/2002EP1259832A1 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same
11/27/2002CN1382261A Spin-valve sensor
11/27/2002CN1095153C Magneto-resistance sensing element and magneto-resistance sensor
11/21/2002WO2002093661A1 Magnetoresistive element
11/21/2002US20020172840 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor
11/21/2002US20020171100 Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells
11/21/2002DE10114197C1 Tunnel magnetoresistive sensor element for external magnetic field measurement has soft magnetic measuring layer separated by tunnel barrier from hard magnetic reference layer or reference layer system
11/19/2002US6483740 All metal giant magnetoresistive memory
11/19/2002US6483677 Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect
11/19/2002US6483675 Tunnel magnetoresistance effect element
11/19/2002US6483674 Spin valve head, production process thereof and magnetic disk device
11/19/2002US6482729 Method of generating spin-polarized conduction electron and semiconductor device
11/19/2002US6482657 Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
11/14/2002WO2002078057A3 A transpinnor-based sample-and-hold circuit and applications
11/14/2002US20020168547 Multilayer; substrate, undercoating, crystal or amorphous magnetic particles
11/14/2002US20020167769 Spin-valve magnetoresistive thin film element
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