Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
09/2001
09/12/2001EP1132920A2 MRAM device
09/12/2001EP1132919A2 Memory cell
09/12/2001EP1132918A2 Improved reference layer structure in a magnetic storage cell
09/12/2001EP1131828A1 Composite magnetic body and electromagnetic interference suppressing body using the same
09/11/2001US6288980 Magneto-optical head for information reading
09/11/2001US6287709 Multilayer; tantalum alloy
09/07/2001WO2001065269A1 Assembly for measuring a magnetic field, using a bridge circuit of spin tunnel elements and a production method for the same
09/05/2001EP1129366A1 Magnetoresistive sensor or memory elements with decreased magnetic switch field
08/2001
08/30/2001WO2001063628A1 tHIN PERMANENT-MAGNET FILM AND PROCESS FOR PRODUCING THE SAME
08/30/2001US20010018135 Multilayer; antiferromagnetic layer, magnetic layer, nonmagnetic layer
08/30/2001US20010017753 Magnetoresistive effect film, mangetoresistive effect sensor utilizing the same and magnetic storage device
08/30/2001US20010017752 Magnetoresistive element
08/30/2001DE10106860A1 Magnetic Tunnel Junction element has third magnetic layer on opposite side of second magnetic layer from first forming closed magnetic circuit in common with second magnetic layer
08/30/2001DE10046864A1 Magnetsensor, Magnetkopf und Magnetplattenvorrichtung Magnetic sensor, magnetic head and magnetic disk device
08/29/2001EP1128399A1 Magnetic garnet material and magnetooptical device using the same
08/29/2001CN1310481A Magnet resistor and magnetic memory using the same magnetoresistance apparatus
08/29/2001CN1310349A Magnetic garnet material and photomagnetic device using the same material
08/28/2001US6282069 Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer
08/28/2001US6282068 Antiparallel (AP) pinned read head with improved GMR
08/28/2001US6281538 Multi-layer tunneling device with a graded stoichiometry insulating layer
08/28/2001US6280813 Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer
08/28/2001CA2063081C Magnetic digital video signal recording method
08/23/2001US20010015878 Magnetic sensor and magnetic storage using same
08/22/2001EP1126531A2 Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same
08/22/2001EP1126469A2 Magnetic memory
08/22/2001EP1125288A1 Magnetoresistive devices, giant magnetoresistive devices and methods for making same
08/22/2001CN1309430A Magnetic tunnel junction element and magnetic memory using it
08/22/2001CN1309301A Magnetic element with double magnetic state and mfg. method thereof
08/21/2001US6278593 Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect
08/21/2001US6278588 Magnetoresistive magnetic field sensor
08/21/2001US6277505 Multilayer; ferromagnetic layer, nonmagnetic layer and thin oxide layer
08/21/2001US6277484 Magnetic recording media and method of producing the same
08/16/2001WO2001059768A2 High data rate writer poles
08/16/2001US20010014412 Magnetoresistive film, magnetoresistive head, information regeneration apparatus and magnetoresistive film manufacture method
08/16/2001US20010014000 Spin-valve thin-film magnetic element provided with single free magnetic layer
08/16/2001US20010013999 Magnetoresistive element and magnetic recording apparatus
08/16/2001US20010013776 Magnetic field sensor with perpendicular axis sensitivity, comprising a giant magnetoresistance material of a spin tunnel junction
08/16/2001EP1124273A2 Magnetoresistive multilayer and head, manufacturing method
08/16/2001EP1124272A1 Magnetoresistant device, method for manufacturing the same, and magnetic component
08/16/2001DE19949713C2 Magnetoresistives Schichtsystem The magnetoresistive layer system
08/15/2001CN1308317A Magnetoresistive element and magnetic memory device
08/14/2001US6275411 Spin dependent tunneling memory
08/09/2001US20010012573 Magnetic recording medium, process for fabricating magnetic recording medium and information regenerator
08/09/2001US20010012188 Spin-valve thin-film magnetic element and method for making the same
08/09/2001US20010012185 A magnetoresistance effect element and a magnetic head employing a magnetoresistance effect element
08/09/2001DE10102933A1 Magnetsensor und Magnetspeicher, bei dem derselbe verwendet wird Magnetic sensor and magnetic memory, in which the same is used
08/08/2001EP1122749A2 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
08/08/2001EP1122719A2 Tunneling magnetoresistive device and method for manufacturing the same
08/08/2001CN1069435C Granular membrane huge magnetic resistance effect sensor material
08/07/2001US6272036 Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage
08/07/2001US6270633 Comprising: a target, a magnetron magnet, a chimney, a disc shaped dome, a substrate; for depositing a gigantic magneto-resistive film
08/07/2001US6270593 Corrosion-resistant, antimagnetic films useful in hard disk drives of personal computers
08/07/2001US6270588 Magnetoresistive effect sensor, thin-film magnetic head with the sensor and manufacturing method of the thin-film magnetic head
08/02/2001WO2001056090A1 Magnetoresistance effect device and method for manufacturing the same, base for magnetoresistance effect device and method for manufacturing the same, and magnetoresistance effect sensor
08/02/2001WO2001055474A1 Nano-material
08/02/2001WO2000079298A3 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems
08/02/2001US20010010868 High saturation magnetic flux density; high resistivity; low coercive force
08/01/2001EP1119860A2 Magnetoresistive memory having improved interference immunity
07/2001
07/31/2001US6268985 Read head having spin valve sensor with improved capping layer
07/26/2001WO2001054145A1 Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same
07/26/2001US20010009063 Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor
07/25/2001CN1305241A Magnetostatic wave element and its manufacturing method
07/25/2001CN1305234A Magnetic tunnel device, magnetic storage and element using said device and its access method
07/25/2001CN1068949C Disk storage system and thin film magnetic head
07/24/2001US6265353 Device and method for producing a multilayered material
07/19/2001WO2001051949A1 Dual spin-valve magnetoresistive sensor
07/19/2001US20010008712 Cobalt, ferric, nickel alloy
07/18/2001EP1117136A1 Ferromagnetic double quantum well tunnel magneto-resistance device
07/18/2001EP1116248A1 Method of manufacturing a magnetic tunnel junction device
07/18/2001EP1116043A1 Method of manufacturing a magnetic tunnel junction device
07/17/2001US6262867 Float slider; heat resistance; high density, high frequency recording; disk storage
07/17/2001US6261646 Magnetic tunnel junction
07/12/2001US20010007707 Laminates having a buffer layer and cover layer
07/12/2001US20010007532 Magnetic element and magnetic memory device
07/11/2001EP1115164A2 Magnetoresistive device and magnetic memory using the same
07/10/2001US6258470 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
07/05/2001US20010006744 Plurality of magnetic components embedded in a pattern in an isolating component comprising a magnetic component of large coercive force and one of a magnetic component of small coercive force
07/05/2001US20010006446 Thin- film magnetic head with low barkhausen noise and floating-type magnetic head therewith
07/05/2001US20010006445 Method of making a multilayered pinned layer structure for improved coupling field and GMR for spin valve sensors
07/05/2001US20010006038 Growing a magnetic garnet single crystal film by liquid phase epitaxy and employing a lead oxide-based flux either at a temperature higher than 940 degree C., or having a lead compound content less than 70 % or a combination of both
07/04/2001EP1112588A1 Electromagnetic field generator and method of operation
07/04/2001EP1112575A1 Magnetoresistive element and use of same as storage element in a storage system
07/03/2001US6256223 Current-induced magnetic switching device and memory including the same
07/03/2001US6255932 Electronic component having built-in inductor
06/2001
06/28/2001US20010005011 Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same
06/26/2001US6252796 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
06/26/2001US6252749 Thin film magnetic head having a gap layer with improved thermal conductivity
06/21/2001US20010004307 Spin valve element and thin film magnetic head
06/20/2001EP1109168A2 Magnetic dual element with dual magnetic states and fabricating method thereof
06/20/2001EP0710390B1 Magnetic structure with stratified layers
06/19/2001US6249405 Magnetic head including magnetoresistive element
06/19/2001US6248416 Recording medium comprising substrate, cobalt or alloy film with specified crystal texture forming magnetic recording layer, underlayer structure having layers with face centered and body centered cubic structures, specified crystal textures
06/13/2001EP1107329A2 Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same
06/13/2001EP1105890A1 Magnetoresistive element and the use thereof as storage element in a storage cell array
06/13/2001DE10056543A1 Non-reciprocal switching circuit element comprises a magnetic component having a specified ferromagnetic half intensity width for resonance and a magnet for applying a direct current magnetic field on the magnetic component
06/12/2001US6245450 Multilayer exchange coupling films
06/07/2001US20010003023 Composed of an antiferromagnetic layer, a pinned magnetic layer, and a nonmagnetic conductive layer; detection sensitivity of external magnetic fields is increased, and shunt loss of sensing current is reduced
06/07/2001US20010003022 Includes insulating layer between electrode layers on a multilayer film in contact with the sides of the insulating layer, so electrodes can be kept thick even at front end faces and sensing current can flow at constant level
06/07/2001US20010002869 A magnetoresistive element including a silicon and/or a diffusion control layer
05/2001
05/31/2001WO2001039219A1 Magnetic thin film, method for forming magnetic thin film, and recording head
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