Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
02/2002
02/12/2002US6346338 Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method
02/12/2002US6346336 Soft magnetic film soft magnetic multilayer film method of manufacturing the same and magnetic device
02/12/2002US6346290 Organic polymer on substrate, delivering an initiator, polymerization and screening
02/07/2002WO2000005693A3 Security device comprising soft magnetic thin film
02/07/2002US20020015269 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
02/07/2002US20020014612 Magnetic garnet material and magnetooptical device using the same
02/07/2002EP1145204A3 Security device comprising soft magnetic thin film
02/07/2002DE10031401A1 Dreitorbauelement, insbesondere Spininjektionstransistor Dreitorbauelement, in particular spin injection transistor
02/05/2002US6344955 System and methods for providing a magnetoresistive element having an improved longitudinal bias magnetic field
01/2002
01/31/2002WO2002009158A2 Semiconductor structure including a magnetic tunnel junction
01/31/2002WO2002009126A2 Spin valve structure
01/31/2002WO2002009098A1 Laminated magnetic recording media
01/31/2002WO2001070873A3 Nanocylinder arrays
01/31/2002US20020012821 Gradient interface magnetic composites and methods therefor
01/31/2002US20020012812 Controlling electrical resistance; multilayer laminate
01/31/2002US20020012267 Non-volatile memory device
01/31/2002US20020012207 Spin valve structures with specular reflection layers
01/31/2002US20020012206 Thin film conductor layer, magnetoresistive element using the same and method of producing thin film conductor layer
01/31/2002US20020011110 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
01/30/2002CN1333534A Spin valve and making method thereof
01/24/2002US20020009840 High density giant magnetoresistive memory cell
01/24/2002US20020009616 A crystal growth controlling layer as a films wherein a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary underlying it; nondiffusing; heat resistance
01/24/2002US20020008948 Magnetic transducer and thin film magnetic head
01/24/2002US20020008947 Echange coupling film and magnetoresistive element using the same
01/24/2002US20020008946 Magnetoresistive film, magnetoresistive head, and information regeneration apparatus
01/24/2002US20020008937 Disk storage system, thin film magnetic head therefor and fabricating method thereof
01/24/2002US20020008936 Corrosion-resistant soft magnetic film, method of producing the same, thin film magnetic head using the same and method of manufacturing the thin film magnetic head
01/24/2002US20020008016 Shields
01/24/2002US20020007679 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
01/24/2002US20020007678 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
01/23/2002EP1174724A2 Plane magnetic sensor
01/22/2002US6341053 Magnetic tunnel junction elements and their fabrication method
01/22/2002US6341052 Magnetoresistive element including a silicon and/or a diffusion control layer
01/22/2002US6340533 Spin-valve magnetoresistance sensor and thin film magnetic head
01/22/2002US6340520 Giant magnetoresistive material film, method of producing the same magnetic head using the same
01/17/2002WO2002005318A2 High density giant magnetoresistive memory cell
01/17/2002WO2002005299A1 Nanostructures
01/17/2002WO2002005268A2 All metal giant magnetoresistive memory
01/17/2002US20020006530 Antiferromagnetic layer, layer pinned by exchange coupling magnetic field, nonmagnetic and free magnetic layers and backing of RuPtIrRhPdOsCr alloy; improved rate of resistance change due to relationship between pinned and free layers
01/17/2002US20020006529 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
01/17/2002US20020006020 Tunneling magnetoresistive element and method of manufacturing the same
01/17/2002US20020006019 Magnetoresistive film, magnetoresistive head and information regeneration apparatus
01/17/2002US20020005084 High strength
01/15/2002US6339543 Writing method for a magnetic immovable memory and a magnetic immovable memory
01/15/2002US6339330 Magnetic head
01/10/2002WO2002003481A1 Three-port component
01/10/2002US20020004151 Perpendicular-magnetic recording media and magnetic recording apparatus
01/10/2002US20020004149 Magnetic recording medium, magnetic recording medium manufacture method, and information regeneration apparatus
01/10/2002US20020004144 Nickel, aluminum alloy
01/09/2002EP1170758A1 Magnetic thin film and magnetic device using the same
01/09/2002EP1169720A1 Magnetic materials
01/09/2002CN1077705C Multilayered magnetic structure and its producing method
01/08/2002US6337215 Particles having large magnetic moments that can be different magnetic strengths or having different field dependencies to simultaneously allow for separation of multiple affinity partners; immunoassays
01/08/2002US6337007 Electroplating a bath containing water-soluble cobalt, iron, nickel salts and diethylenetriamine, alanine, glycine, glutamic acid and salts free of sulfur
01/03/2002US20020001736 High density; multilayer; nonmagnetic backing; cobalt containing magnetic layer
01/03/2002US20020001711 Rolling, annealing, compaction, sintering
01/03/2002US20020000597 Nonvolatile semiconductor memory device and method for recording information
01/03/2002US20020000575 Spin-valve transistor
01/02/2002EP1168354A1 Magnetoresistive memory element
01/02/2002EP1166288A1 Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same
01/02/2002CN1329742A Seed layer for nickel xide pinning layer for increasing magnetoresistance of spin valve sensor
01/02/2002CN1329184A Bismuth-substituted garnets thick film material and producing method thereof
01/01/2002US6335081 Tunnel magnetoresistance effect element
01/01/2002CA2222618C Gradient interface composites and methods therefor
12/2001
12/27/2001WO2001099206A1 Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus
12/27/2001WO2001099100A1 Magnetic recording medium and method for fabricating a magnetic recording medium
12/27/2001WO2001099099A2 Magnetic multilayer structure with improved magnetic field range
12/27/2001US20010055819 Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having magnetic core
12/27/2001US20010055775 Generating preferential layouts; mix particles, allow particle to form layout, recover layout
12/27/2001US20010055669 Magnetoresistive cobalt oxide mixture
12/27/2001US20010055185 Spin-valve thin-film magnetic element and method for fabricating the same
12/27/2001US20010055184 Tunnel magnetoresistive effective element, a thin film magnetic head, a magnetioc head device and a magnetic disk drive device
12/27/2001US20010055168 Magnetic transfer method and magnetic recording medium
12/27/2001CA2392487A1 Magnetic recording medium and method for fabricating a magnetic recording medium
12/26/2001CN1328316A Magnet reversing turn display screen
12/25/2001US6332359 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
12/20/2001US20010053053 Exchange coupling film and electroresistive sensor using the same
12/20/2001US20010052828 Material for bismuth substituted garnet thick film and a manufacturing method thereof
12/19/2001CN1327599A Composition magnetic body andelectromagnetic interference suppressing body using the same
12/19/2001CN1327577A Magnetic recording device, method for adjusting magnetic head and magnetic recording medium
12/19/2001CN1076498C Spin valve magnetoresistive sensor and magneitc recording system using the sensor
12/18/2001US6331773 Pinned synthetic anti-ferromagnet with oxidation protection layer
12/18/2001US6331338 Amorphous alloy of light rare earth-transition metal and semi-metal, magneto-optical recording layer made of the alloy, and magneto-optical disk adopting the layer
12/18/2001US6331199 Biaxially textured articles formed by powder metallurgy
12/13/2001US20010051288 Multilayer; containing antiferromagnetic material
12/13/2001US20010050834 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias
12/12/2001EP1162635A1 Material for bismuth substituted garnet thick film and a manufacturing method thereof
12/12/2001EP1162494A1 Faraday rotation angle varying device
12/12/2001EP1161570A1 Method and device for coating a support body with a hard magnetic se-fe-b material using plasma spraying
12/12/2001CN1326185A Magnetic duplicating method and magnetic record media
12/11/2001US6330135 Strontium titanate, ferromagnetic oxide, thin film and rare earth manganate
12/11/2001US6329078 Tunnel barrier layer in the ferromagnetic tunnel junction multilayer structure, high polarization layer of a first nife material and a soft magnetic layer of a second nife material so that said high polarization layer is positioned closer to
12/06/2001WO2001093286A1 Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic refcording device and magnetic device
12/06/2001US20010048643 Multilayer resonance device
12/06/2001US20010047930 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film
12/06/2001CA2349871A1 Material for bismuth substituted garnet thick film and a manufacturing method thereof
12/05/2001EP1160782A2 Multilayered magnetooptical recording medium and manufacturing method
12/04/2001US6326637 Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device
12/04/2001US6326092 Magnetoresistance device and production method thereof
12/04/2001US6326090 Ten different inorganic materials that cannot interdiffuse, area within regions is hydrophilic, outside regions is hydrophobic
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