Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
09/2000
09/19/2000US6122151 Spin-valve magnetoresistive element
09/19/2000US6120918 Co-Fe-Ni thin magnetic film, process for producing the same, composite thin film magnetic head, and magnetic recording device
09/19/2000US6120917 Hybrid magnetic substrate and method for producing the same
09/12/2000US6118628 Thin film magnetic head with Ni-Fe alloy thin film
09/12/2000US6118624 Magneto-resistance effect element having a magnetic biasing film
09/12/2000US6118351 Micromagnetic device for power processing applications and method of manufacture therefor
09/12/2000US6117568 A magnetic film on an electrode having the reverse adjustable magnetic properties between paramagnetism and ferrimagnetism through electrochemical oxidation and reduction
09/12/2000US6117282 Method of producing amorphous Co-Tb magnetic recording thin films
09/08/2000WO2000052713A1 Magnetic material
09/08/2000WO2000052489A1 Magnetic sensor and its production method, ferromagnetic tunnel junction device and its production method, and magnetic head using the same
09/07/2000DE19908054A1 Ungekoppelter GMR-Sensor Uncoupled GMR sensor
09/06/2000EP1033764A2 Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
09/05/2000US6115224 Spin-valve type thin film element and its manufacturing method
09/05/2000US6114850 Antiferromagnetic(afm) layer of nickel, cobalt, and/or iron oxides, fixed magnetic layer, nonmagnetic, and free magnetic layer, laminated onto base layer; between base layer and afm layer is adhesive layer of given metals, alloys, or oxides
09/05/2000US6114056 Magnetic element, and magnetic head and magnetic memory device using thereof
08/2000
08/31/2000WO2000050912A1 Decoupled gmr sensor with laterally structured layer
08/30/2000EP1031143A1 Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making
08/29/2000US6111782 Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same
08/29/2000US6111729 Magnetoresistance effect element
08/29/2000US6111722 Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same
08/29/2000US6110751 Tunnel junction structure and its manufacture and magnetic sensor
08/29/2000US6110609 Magnetic thin film and magnetic head using the same
08/22/2000US6108177 Tunnel junction structure with FeX ferromagnetic layers
08/17/2000WO2000048180A1 Magneto-optical recording medium and magneto-optical recording device
08/15/2000US6104275 Magnetoresistive element
08/15/2000US6104189 Magnetoresistive sensor having at least one layer with a pinned magnetization direction
08/15/2000US6103406 Magnetic tunnel device
08/15/2000US6103405 Planar inductance element
08/15/2000US6103010 Method of depositing a ferromagnetic film on a waveguide and a magneto-optic component comprising a thin ferromagnetic film deposited by the method
08/08/2000US6101072 Yoke type or flux guide type magnetoresistive head in which the yoke or flux guide is provided to the magnetic resistive element via an interposed soft magnetic layer
08/08/2000US6101071 MR film with upper and lower magnetic layers with resistivity greater than that of MR film magnetic layers
07/2000
07/26/2000EP0744076B1 Magnetoresistive structure with alloy layer
07/25/2000US6094325 Spin valve head reducing barkhausen noise
07/19/2000EP1020878A1 High electric resistance magnetic film
07/19/2000EP1019927A1 Method for increasing the operating frequency of a magnetic circuit and corresponding magnetic circuit
07/18/2000US6091313 Magnetostatic wave device including magnetic garnet layer having an inclined side face
07/18/2000US6090480 Magnetoresistive devices for reading out data recorded on magnetic memory media, magnetoresistive sensors, and magnetic memory systems
07/13/2000DE19900447A1 Ferromagnetic layer material, useful for a magnetic storage medium, comprises a bismuth-manganese film epitaxially grown on a substrate
07/13/2000DE19840823C1 Magnetoresistives Element und dessen Verwendung als Speicherelement in einer Speicherzellenanordnung The magnetoresistive element and its use as memory element in a memory cell arrangement
07/11/2000US6088195 Magnetoresistance effect element
07/11/2000US6087027 Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon
07/11/2000US6087026 Comprising magnetoresistive film and an adjacently formed biasing soft magnetic film composed of iron-metal-nitride
07/11/2000US6086727 Movable flux regulator disposed between target and wafer for partially blocking portion of target material from being deposited on said wafer during deposition of target material, wherein movable flux regulator is tiltable in x,y, and z-axis
07/04/2000US6083764 Method of fabricating an MTJ with low areal resistance
07/04/2000US6083632 Antiferromagnetic layers composed of manganese intermetallic and/or alloy
06/2000
06/29/2000WO2000038191A1 Method of fabricating a magnetic random access memory
06/27/2000US6081113 Cantilever magnetic force sensor for magnetic force microscopy having a magnetic probe coated with a hard-magnetic material
06/27/2000US6080476 Magnetic layer on substrate for magnetic recording media
06/21/2000DE19956196A1 Magnetic material, especially for a magnetic head in a magnetic storage device, e.g. a hard disk drive or magnetic tape device, comprises a nickel-iron-molybdenum alloy with a low magnetic strain constant
06/21/2000CN1257292A Magnetic material and magnetic head using same and magnetic with said magnetic head storage device
06/15/2000WO2000034946A1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
06/15/2000CA2340094A1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
06/13/2000US6074743 Magnetoresistance effect element and magnetoresistance device
06/13/2000US6074707 Method of producing magnetoresistive element
06/13/2000US6074535 Magnetoresistive head, method of fabricating the same and magnetic recording apparatus
06/06/2000US6071607 Magnetic disks with magnetoresistive head, recording medium, nonmagnetic substrates, primer layer of chromium and molybdenum and magnetic recording material
05/2000
05/30/2000US6069820 Spin dependent conduction device
05/25/2000WO2000030077A1 Differential vgmr sensor
05/25/2000WO2000019441A3 Magnetoresistive memory having improved interference immunity
05/24/2000EP1003047A2 Magneto-resistance effect element
05/24/2000EP1002573A2 The combinatorial synthesis of novel materials
05/24/2000EP1002572A2 The combinatorial synthesis of novel materials
05/24/2000CA2254460A1 Systems and methods for the combinatorial synthesis of novel materials
05/23/2000US6066867 Current control functional device
05/18/2000WO2000028342A1 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
05/18/2000WO2000005712A9 Reducing sensor temperature in magnetoresistive recording heads
05/16/2000US6063512 Soft magnetic thin film having Co, Ni and Fe as main ingredients, method of manufacturing the same and magnetic head and magnetic storage unit using the soft magnetic thin film
05/16/2000US6063491 Magnetoresistance effects film
05/16/2000US6063304 Cerium iron oxide for optical devices
05/11/2000WO2000026683A1 Magnetoresistive magnetic field sensor
05/04/2000WO2000025307A1 Structures with improved magnetic characteristics for giant magneto-resistance applications
05/02/2000US6057049 Exchange coupling film and magnetoresistive element
04/2000
04/26/2000CN1251679A Magnetic recording media
04/26/2000CN1251678A 磁记录媒体 Magnetic recording media
04/25/2000US6055215 Magneto-optical recording medium having a plurality of ferromagnectic thin layers
04/25/2000US6055135 Exchange coupling thin film and magnetoresistive element comprising the same
04/25/2000US6054226 Magnetoresistive element has layer of electroconductive, crystalline magnetostrictive material, dielectric layer of given oxides, and layer of oxide magnetoresistive material; detector having high sensitivity and quick response
04/20/2000WO2000014732A3 Electric field for magnetic reversal of a thin film
04/19/2000EP0818126B1 Electromagnetic-power-absorbing composite
04/18/2000US6052263 Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
04/18/2000US6052042 Magnetostatic wave device
04/18/2000US6051309 Magnetoresistance effect film and method for making the same
04/18/2000US6051304 Alternate layers of ferromagnetic material and nonmagnetic material on a substrate, and the oxygen concentration in the structure is less than 100 wt. ppm.
04/13/2000DE19844890A1 Dünnschichtenaufbau eines magnetfeldempfindlichen Sensors mit einem magnetoresistiven Mehrschichtensystem mit Spinabhängigkeit der Elektronenstreuung Thin film structure of a magnetic field sensitive sensor with a magnetoresistive multilayer system with spin dependence of electron scattering
04/12/2000EP0993054A2 Thin film magnetic field sensor structure having magneto-resistive multilayer system with spin dependent electron scattering
04/12/2000EP0992984A1 Magnetic tunneling element and manufacturing method therefor
04/12/2000EP0992281A2 The combinatorial synthesis of novel materials
04/12/2000EP0991913A2 Element comprising a layer structure and a current-directing means
04/11/2000US6048632 Thin film of doped mercury cadmium telluride film showinglarge zero field offset; tapes, diskettes, drums
04/06/2000WO2000019441A2 Magnetoresistive memory having improved interference immunity
04/06/2000WO2000019226A1 Quad-layer gmr sandwich
04/06/2000DE19830343C1 Artificial antiferromagnetic layer manufacturing method for MR sensor, involves affecting symmetry of antiferromagnetic layer partially by mask to adjust orientation of magnetization of bias layer
04/05/2000EP0991087A2 Soft magnetic thin film, soft magnetic multi-layered film, producing method thereof and magnetic device using them
04/04/2000US6046892 Magnetoresistive head with improved underlayer
04/04/2000US6046890 Method for protecting a magnetoresistive head from damage due to electrostatic discharge
04/04/2000US6045671 Systems and methods for the combinatorial synthesis of novel materials
03/2000
03/30/2000WO2000017915A1 Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core
03/30/2000WO2000017863A1 Magnetoresistive devices, giant magnetoresistive devices and methods for making same
03/30/2000WO2000017666A1 Magnetoresistive sensor element, especially angular sensor element
03/30/2000CA2345390A1 Magnetoresistive devices, giant magnetoresistive devices and methods for making same
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