Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
03/2004
03/11/2004US20040047083 Tunneling magneoresistive element and method of manufacturing the same
03/11/2004US20040047081 Robust hard bias/conductor lead structures for future GMR heads
03/11/2004US20040047072 High mangnetic moment co-fe-o-n films with soft magnetic properties
03/11/2004US20040046624 Magneto-resistive layer arrangement and gradiometer with said layer arrangement
03/11/2004US20040046098 Retention device for rods and the like
03/10/2004EP1396867A1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and use
03/10/2004CN1480923A Rotary valve head contg, partial current screening layer, prodn method of said head, and current screening method
03/10/2004CN1141720C Magnetostatic wave device and method for manufacturing same
03/10/2004CN1141700C Exchanging mating-film, magnetoresistive effect apparatus, magnetoeffect head and mfg. method therefor
03/09/2004US6704177 Magnetic head with magnetic domain control structure having antiferromagnetic layer and magnetic layer
03/09/2004US6703645 Spin filter
03/09/2004US6703249 Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
03/04/2004US20040043526 Method of patterning a layer of magnetic material
03/04/2004US20040043258 Perpendicular magnetic recording medium and magnetic storage apparatus using the same
03/04/2004US20040042266 Magnetic body, magnetic device using the same, and method of manufacturing the same
03/04/2004US20040042246 Method for reducing diffusion through ferromagnetic materials
03/04/2004US20040042130 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process
03/04/2004US20040042129 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
03/04/2004US20040042128 Nanocrystalline layers for improved MRAM tunnel junctions
03/04/2004US20040042127 Spin-valve head containing partial current-screen-layer, product method of said head, and current-screen method
03/04/2004US20040041679 Magnetic detecting element having beta-values selected for free magnetic layer and pinned magnetic layer
03/04/2004US20040041217 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
03/04/2004US20040041184 MRAM sense layer area control
03/04/2004US20040041183 Amorphous alloys for magnetic devices
03/04/2004US20040041182 MRAM sense layer area control
03/04/2004US20040041121 Magnetic loss material and method of producing the same
03/03/2004EP1394821A2 Magnetic body, magnetic device using the same, and method of manufacturing the same
03/03/2004EP1394820A2 Magnetic loss material and method of producing the same
03/03/2004CN1479874A Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufacturing thereof
03/03/2004CN1479387A Magnetic reluctance element with 'current perpendicular to plane' structure
03/03/2004CN1140896C GMR magnetic sensor having improved sensitivity of magnetic detection
03/02/2004US6701048 Unidirectional gyrotropic photonic crystal and applications for the same
03/02/2004US6700757 Enhanced free layer for a spin valve sensor
03/02/2004US6700756 Spin-valve thin film magnetic element and method of manufacturing the same
03/02/2004US6700753 Spin valve structures with specular reflection layers
03/02/2004US6700750 Spin-valve thin film element
03/02/2004US6699332 Converting selected portions of nonmagnetic material using focussed radiation beam
02/2004
02/26/2004WO2004017085A1 Magnetoresistive layer system and sensor element comprising said layer system
02/26/2004US20040037015 Electromagnetic transducer laminate, electromagnetic transducer, thin film magnetic head, magnetic head assembly, magnetic reproducing apparatus, and method of manufacturing electromagnetic transducer
02/26/2004US20040034991 Method for manufacturing a spin valve having an enhanced free layer
02/25/2004EP1391942A1 Tunnel magnetoresistance element
02/25/2004CN1478300A Information memory device and electrionic apparatus with mounted information memory device
02/24/2004US6696737 Unipolar spin transistor and the applications of the same
02/24/2004US6696107 Passivation; displacing particles; high density magnetic recording media; data storage
02/19/2004US20040032786 Fractal structure and its producing method, functional material and its producing method, and functional device and its producing method
02/19/2004US20040032657 Optical apparatus
02/19/2004US20040032318 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
02/19/2004DE19724688B4 Drehventil-Magnetowiderstandskopf und Verfahren zum Herstellen desselben, sowie magnetisches Aufnahme-/Wiedergabegerät Rotary valve magneto-resistive head and method of manufacturing the same, and magnetic recording / reproducing apparatus,
02/18/2004EP1389738A1 Faraday rotator
02/17/2004US6693774 Magnetoresistive sensor and magnetic storage apparatus
02/17/2004US6692847 Nonmagnetic substrate, underlayer deposited on substrate, magnetic laminated film formed on underlayer; magnetic encoder with further improved thermal resistance
02/12/2004WO2004013919A1 Magnetoresistance effect element and magnetic memory unit
02/12/2004WO2004013861A2 Magnetic element utilizing spin transfer and an mram device using the magnetic element
02/12/2004WO2003085674A3 Synthetic-ferrimagnet sense-layer for high density mram applications
02/12/2004US20040028947 Corrosion resistant material having high magnetic moment
02/12/2004US20040027868 Magnetic recording medium
02/12/2004US20040027853 Magnetic element utilizing spin transfer and an mram device using the magnetic element
02/12/2004US20040027733 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same
02/12/2004US20040027732 GMR spin valve sensor with ion implanted areas
02/11/2004EP1388900A1 Magnetoresistive element
02/11/2004EP1388898A1 Semiconducting device for injecting a spin polarized current in a semiconductor
02/11/2004CN1474784A Ferrite thin film for high frequency and method for preparation thereof
02/11/2004CN1138153C Quad-layer GMR sandwich
02/10/2004US6690553 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
02/10/2004US6690552 Magnetoresistive film, head, and information regeneration apparatus having improved current flow characteristics
02/10/2004US6689456 Magnetic recording medium, a manufacturing method thereof, and a magnetic recording unit using thereof
02/05/2004WO2004011387A1 Method of producing ferrite magnet from layed precursor
02/05/2004WO2003060919A3 Resistive memory elements with reduced roughness
02/05/2004US20040023075 Spin valve element and thin film magnetic head
02/05/2004US20040023065 Ferromagnetic thin film magnetic field sensor with a dielectric intermediate layer; anisotropic ferromagnetic material on one surfaces and a superparamagnetic thin-film on on the other
02/05/2004US20040022108 Spin valve element and thin film magnetic head
02/05/2004US20040021991 Spin valve head with reduced element gap
02/05/2004US20040021990 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
02/04/2004EP1386322A2 High density giant magnetoresistive memory cell
02/04/2004CN2602471Y Improved structure of magnetic substance
02/04/2004CN1472165A Method for preparing magnetic ferrite from layered precursor
02/04/2004CN1137466C Exchange bonding film, magneto-resistant effect element, magnet head and magnet memory
02/03/2004US6687099 Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference
02/03/2004US6687098 Top spin valve with improved seed layer
02/03/2004US6687082 Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatus
02/03/2004US6686205 Parallel synthesis and analysis
02/03/2004US6686068 For use in disk drives
01/2004
01/29/2004WO2004010443A1 Enhanced giant magnetoresistance device and method
01/29/2004WO2004010442A1 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
01/28/2004EP1385151A2 Magnetoresistive element having currrent-perpendicular-to-the-plane structure
01/27/2004US6683763 Method and system for providing a self-aligned electrical contact for a TMR element
01/27/2004US6683762 CPP GMR device with inverse GMR material
01/27/2004US6683761 Magnetoresistive sensor with laminate electrical interconnect
01/27/2004US6682834 Magnetic storage medium having a high recording density
01/27/2004US6682833 Recorders comprising nonmagnetic foundation, polycrystalline undercoatings and magnetic alloy of cobalt and chromium for use in disk drives having high coercive forces and high recording density
01/22/2004US20040014244 Magnetic semiconductor material and method for preparation thereof
01/22/2004US20040014077 Delivering a first component of a first material and a first component of a second material to first and second region on a substrate, delivering a second component of second material to first and second region, simultaneously reacting component
01/22/2004US20040012899 Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction than free layer and manufacturing method thereof
01/22/2004US20040012898 Spin-valve thin-film element and method for manufacturing the same
01/22/2004US20040012895 Enhanced giant magnetoresistance device and method
01/21/2004EP1383133A1 A magnetic memory device and method
01/21/2004EP1381876A1 Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
01/20/2004US6680831 Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
01/20/2004US6680827 Dual spin valve CPP MR with flux guide between free layers thereof
01/15/2004WO2004006335A1 Magnetic random access memory
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