Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
09/2002
09/10/2002US6449133 Magnetoresistance film and magnetic read sensor
09/10/2002US6449122 Thin-film magnetic head including soft magnetic film exhibiting high saturation magnetic flux density and low coercive force
09/10/2002US6446507 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor
09/06/2002WO2002069359A2 Magnetoelectronics element having a switching energy barrier
09/05/2002US20020122958 Perpendicular magnetic recording media and magnetic storage apparatus using the same
09/05/2002DE10105894A1 Magnetisch sensitive Schichtanordnung Magnetically sensitive layer arrangement
09/04/2002EP1237150A2 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer
09/04/2002CN1367578A Method and equipment for frequency multiplication
09/04/2002CN1367544A Magneto-resistance effect element and manufacturing method
09/04/2002CN1367481A 磁传感器及其制造方法 Magnetic sensor and manufacturing method thereof
09/03/2002US6445554 Method and system for providing edge-junction TMR for high areal density magnetic recording
09/03/2002US6445024 Ramp-edge structured tunneling devices using ferromagnet electrodes
08/2002
08/29/2002US20020119243 Parallel deposition, synthesis and screening of an array of diverse materials at known locations on a single substrate surface
08/29/2002US20020118487 Cobalt-nickel-iron alloy thin film and method of forming the same, and thin-film magnetic head and method of manufacturing the same
08/29/2002US20020117727 Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
08/29/2002US20020117102 Iron nitride thin film and methods for production thereof
08/29/2002DE10164283A1 Magnetspeichervorrichtung und Magnetsubstrat A magnetic memory device and magnet substrate
08/27/2002US6442064 Magnetic tunnel junction element and magnetic memory using the same
08/27/2002US6440589 Ferromagnetic overlays improve the thermal stability of superparamagnetic grains contained within host layers by magnetically coupling the grains through bridging; thinner host layer; higher recording density
08/22/2002WO2002065489A2 Magnetically sensitive layer array
08/22/2002US20020114975 Magnetic recording medium and manufacturing method therefore
08/22/2002US20020114974 For use in disk drives
08/22/2002US20020114972 Ferromagnetic tunnel junctions with enhanced magneto-resistance
08/22/2002US20020114112 Magnetic tunnel element and its manufacturing method, thin-film magnetic head, magnetic memory and magnetic sensor
08/22/2002US20020114110 Magnetoresistance-effect magnetic head
08/21/2002EP1233429A2 FeCoNiN-based soft magnetic thin film composition
08/21/2002EP1232504A1 Method of manufacturing a spin valve structure
08/21/2002CN1365502A Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same
08/20/2002US6438026 Magnetic field element having a biasing magnetic layer structure
08/20/2002US6436526 Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
08/15/2002US20020109948 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer
08/15/2002US20020109172 Nonvolatile magnetic storage device
08/15/2002US20020109134 Nano-structures, process for preparing nano-structures and devices
08/14/2002EP1231607A2 Nonvolatile magnetic storage device
08/14/2002CN1364300A Magnetic field element having a biasing magnetic layer structure
08/13/2002US6433972 Multilayer; nonmagnetic support, ferromagnetic layer
08/08/2002US20020106532 Soft magnetic film having improved resistivity
08/08/2002US20020105827 Three-layered stacked magnetic spin polarisation device with memory, using such a device
08/08/2002US20020105823 Magnetic spin polarisation and magnetisation rotation device with memory and writing process, using such a device
08/07/2002EP0938728B1 Magnetizable device
08/07/2002CN1363101A Thin permanent-magnet film and process for producing same
08/06/2002US6430012 Multilayer; spin valve
08/06/2002US6429497 Method for improving breakdown voltage in magnetic tunnel junctions
08/06/2002CA2252926C All-metal, giant magnetoresistive, solid-state component
08/01/2002US20020102436 Free layer, whose magnetized direction is changed according to an external magnetic field, and a pin layer, whose magnetized direction is unchanged, are laminated through an insulative layer, and to a magnetic head
08/01/2002US20020101692 Magnetic devices with perpendicular exchange biasing
08/01/2002US20020101691 Magnetic sensor with reduced wing region magnetic sensitivity
07/2002
07/31/2002EP1227575A2 Method for multiplying a frequency and instrument for multiplying a frequency
07/31/2002EP1227526A2 Magnetic sensor and method of producing the same
07/31/2002EP1226878A2 Aligned fine particles, method for producing the same and device using the same
07/31/2002EP1099217B1 Electric field for magnetic reversal of a thin film
07/30/2002US6426156 Magnetostatic wave device
07/25/2002WO2002058167A1 Spin switch and magnaetic storage elemet using it
07/25/2002WO2002058166A1 Magnetic storage element, production method and driving method therefor, and memory array
07/25/2002WO2002058086A1 Granular thin magnetic film and method of manufacturing the film, laminated magnetic film, magnetic part, and electronic device
07/25/2002US20020098383 Magnetic layer comprising crystal grains having L10 structure including iron and platinum and 0.1-50 percent of one element selected from copper, gold, zinc, tin, palladium and manganese, protective layer; high density recording
07/25/2002US20020098380 Magnetic films including iridium, manganese and nitrogen
07/25/2002US20020097540 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
07/25/2002US20020097539 Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same
07/25/2002US20020097538 Current perpendicular-to-the-plane structure spin valve magnetoresistive head
07/25/2002US20020097537 Magnetoresistive tunnel junction element
07/25/2002US20020097535 Magnetoresistive magnetic sensor and magnetic storage apparatus
07/25/2002US20020097534 Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes
07/25/2002US20020097531 Magnetoresistive device and method of manufacturing same and thin-film magnetic head and method of manufacturing same
07/25/2002US20020096698 Unipolar spin diode and transistor and the applications of the same
07/24/2002EP1225593A1 Magnetic device based on spin polarization and rotating magnetization, memory and writing procedure utlilizing said device
07/23/2002US6424506 Spin-valve magnetoresistive thin film element
07/18/2002WO2002035559A3 Magnetic layer formed of multiple sub-element layers
07/18/2002WO2002009158A3 Semiconductor structure including a magnetic tunnel junction
07/18/2002US20020094457 Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films
07/18/2002DE10164603A1 Production of an iron nitride thin layer used in the production of magnetic heads comprises forming an iron nitride epitaxial layer on a substrate by reacting a vaporized iron
07/17/2002EP1223585A1 Tri-layer stack spin polarised magnetic device and memory using the same
07/17/2002CN1359099A Magnetic resistance effect device, magnetic head, magnetic recording equipment and storage device
07/16/2002US6420179 Combinatorial sythesis of organometallic materials
07/11/2002WO2002054389A2 Enhanced free layer for a spin valve sensor in a magnetic read head
07/11/2002US20020090755 Magnetic thin film, a magnetic component that uses this magnetic thin film, manufacturing methods for the same, and a power conversion device
07/11/2002US20020090534 Nonmagnetic substrate, underlayer deposited on substrate, magnetic laminated film formed on underlayer; magnetic encoder with further improved thermal resistance
07/10/2002EP1221622A2 Magneto resistive sensor
07/09/2002US6417952 Faraday rotation angle varying device
07/09/2002US6417039 Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core
07/09/2002US6416880 Amorphous permalloy films and method of preparing the same
07/09/2002US6416591 Non-oriented electromagnetic steel sheet having excellent magnetic properties after stress relief annealing and method of manufacturing the same
07/04/2002WO2002052658A1 Production method for spin valve film and production method of magnetoresistance effect type magnetic head
07/04/2002US20020086182 Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same
07/04/2002US20020085322 Enhanced free layer for a spin valve sensor
07/04/2002US20020085321 Spin valves with co-ferrite pinning layer
07/04/2002US20020085319 Ferromagnetic tunnel magnetoresistive devices and magnetic head
07/04/2002US20020084501 Magnetoresistive device and method for producing the same, and magnetic component
07/03/2002EP1219731A1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF
06/2002
06/27/2002WO2002050924A1 Magnetoresistive device, magnetic head, and magnetic disk player
06/27/2002WO2002009126A3 Spin valve structure
06/27/2002US20020081457 Magnetoresistive film having non-magnetic spacer layer of reduced thickness
06/27/2002US20020079024 Having microstructure composed of crystalline phases of neodymium iron boron structure type whose c-axis is oriented in film thickness direction and amorphous phases wherein each crystalline phase is isolated from others by amorphous phases
06/27/2002US20020078550 Manufacturing method of magnetoresistive element and film forming apparatus
06/26/2002EP1217616A2 Magnetic composition
06/25/2002US6411476 Ferromagnetic free layer having a magnetic moment that is free to rotate from a first direction in response to a signal field; ferromagnetic pinned layer; spacer layer; antiferromagnetic pinning layer, e.g. ni-mn
06/25/2002US6410331 Combinatorial screening of inorganic and organometallic materials
06/20/2002WO2002035715A3 Polymer-, organic-, and molecular-based spintronic devices
06/20/2002WO2002029911A3 Tunelling magnetoresistance (tmr) material having ultra-thin magnetic layer
06/20/2002US20020076940 Manufacture of composite oxide film and magnetic tunneling junction element having thin composite oxide film
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