Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
11/2001
11/29/2001US20010046110 Magnetoresistive device having a highly smooth metal reflective layer
11/27/2001US6322640 Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element
11/22/2001WO2001088525A1 Structurally programmable microfluidic systems
11/22/2001WO2001087458A1 Magnetic bead-based arrays
11/22/2001US20010043986 Forming a laminate having an antiferromagnetic layer, a ferromagnetic layer, and at the interface between a seed layer comprising a (111) plane of face-centered cubic crystal
11/22/2001US20010043488 Magnetoresistive memory having elevated interference immunity
11/22/2001US20010043448 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
11/22/2001US20010043447 Manufacturing method of spin-valve magnetoresistive thin film element
11/22/2001DE10031229C1 Current-dependent resistive component used as a switch, sensor or memory element has a layer system consisting of two ferromagnetic manganate layers divided by an epitaxially grown insulating material layer
11/21/2001EP1156480A2 Magnetic transfer method and magnetic recording medium
11/21/2001CN1323442A Magnetoresistive element and the use thereof as storage element in a storage cell array
11/20/2001US6319544 Depositing a ferromagnetic and anti-ferromagnetic layer, ordering and thinning, maintaining magnetic exchange coupling
11/15/2001US20010040819 Magnetoresistive device and magnetic memory using the same
11/15/2001US20010040781 Spin valve thin film magnetic element and thin film magnetic head
11/15/2001US20010040778 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices
11/15/2001US20010040777 Magnetoresistive sensor, magnetic head and magnetic disk apparatus
11/15/2001US20010040494 Electronic component having built-in inductor
11/13/2001US6317297 Current pinned dual spin valve with synthetic pinned layers
11/13/2001US6315839 Method of making a keeper layer for a spin valve sensor with low intrinsic anisotropy field
11/08/2001WO2001084570A2 Magnetic element with insulating veils and fabricating method thereof
11/08/2001US20010038931 Method for recording magnetic transitions on recording layer having antiferromagnetically coupled ferromagnetic films
11/08/2001US20010038927 Desulfurization with scavenger
11/08/2001US20010038926 Magnetic thin film
11/08/2001DE10121337A1 Magnetic thin film for magnetic component, has photosensitive or non-photosensitive resin film having fine particles of either ferrous, cobalt, nickel, manganese and chromium
11/06/2001US6313973 Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
11/06/2001US6313627 Sensor device for detecting the direction of an external magnetic field using a magnetoresistive sensor element
11/06/2001US6312840 In which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect.
11/01/2001US20010036699 Multi-layer tunneling device with a graded stoichiometry insulating layer
11/01/2001US20010036563 Nanogranular thin film and magnetic recording media
11/01/2001US20010036046 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
11/01/2001US20010036043 Magnetic thin film head, the fabrication method, and magnetic disk
10/2001
10/31/2001CN1320216A Quad-layer GMR sandwich
10/31/2001CN1319900A Magnetic sensor and magnetic memory using same
10/30/2001US6309557 Magnetic garnet material and faraday rotator using the same
10/25/2001US20010033466 Spin-valve type thin film magnetic element
10/25/2001US20010033465 Magnetoresistive head and information regeneration apparatus
10/25/2001US20010033464 Tunnel magnetoresistive effective element, a thin film magnetic head, a magnetic head device and a magnetic disk drive device
10/25/2001US20010033463 Magnetoresistance-effect element, magnetoresistance-effect magnetic head, and method of manufacturing a magnetoresistance-effect element
10/24/2001EP1148551A2 Device comprising micromagnetic components for power applications and process for forming device
10/24/2001CN1319225A Magnetoresistive devices, giant magnetoresistive devices and methods for making same
10/23/2001US6307708 Exchange coupling film having a plurality of local magnetic regions, magnetic sensor having the exchange coupling film, and magnetic head having the same
10/23/2001US6307241 Integrable ferromagnets for high density storage
10/18/2001WO2001078070A1 A magnetic film having a magnetic easy-axis or a multiple easy-axis and a method of manufacturing the magnetic film
10/18/2001US20010031547 Method of generating spin-polarized conduction electron and semiconductor device
10/18/2001US20010031374 Magnetic film having a magnetic easy-axis or a multiple easy-axis and a method of manufacturing the magnetic film
10/18/2001US20010030839 Dual spin-valve magnetoresistive sensor
10/18/2001DE10057820A1 Magnetisches Element und Magnetspeichervorrichtung The magnetic element and the magnetic memory device
10/17/2001EP1145204A2 Security device comprising soft magnetic thin film
10/17/2001CN1318202A Method of mfg. magnetic tunnel junction device
10/17/2001CN1318198A Magnetoresistive memory having improved interference immunity
10/16/2001US6303242 Gradient interface magnetic composites and methods therefor
10/16/2001US6303240 For core material for a magnetic head
10/16/2001US6303218 Multi-layered thin-film functional device and magnetoresistance effect element
10/11/2001WO2001075894A2 Quantum magnetic memory
10/11/2001US20010028538 Magnetoresistive sensor and magnetic storage apparatus
10/11/2001US20010028068 Magnetoresistive element substructure, magnetoresistive element and micro device, and methods of manufacturing same
10/10/2001EP1143780A1 Electronic component comprising a metallic case provided with a magnetic loss material
10/10/2001EP1143575A1 Connector capable of considerably suppressing a high-frequency current
10/10/2001EP1143042A1 Magnetic garnet single-crystal film and method of producing the same, and faraday rotator comprising the same
10/10/2001CN1317141A Magnetoresistive element and use of same as storage element in storage system
10/10/2001CN1317135A Reducing sensor temperature in magnetoresistive recording heads
10/10/2001CN1316804A Connector capable of notable controlling high frequency current
10/10/2001CN1316746A Multidigit magnetic memory element
10/10/2001CN1316373A Electric component containing metal box with magnetic loss material
10/09/2001US6301089 Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer
10/09/2001US6301088 Magnetoresistance effect device and method of forming the same as well as magnetoresistance effect sensor and magnetic recording system
10/09/2001US6300617 Magnetic digital signal coupler having selected/reversal directions of magnetization
10/04/2001WO2001073762A2 Magnetic recording medium
10/04/2001US20010026470 Magnetic field element having a biasing magnetic layer structure
10/04/2001US20010026423 Magnetic head and magnetic disk apparatus
10/04/2001US20010026158 Nuclear spin control device
10/04/2001US20010025978 Magnetic random access memory capable of writing information with reduced electric current
10/04/2001CA2398950A1 Magnetic recording medium
10/02/2001US6297983 Reference layer structure in a magnetic storage cell
10/02/2001US6295718 Method for fabricating a non-parallel magnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor element
09/2001
09/27/2001WO2001071735A1 Magnetic element with an improved magnetoresistance ratio
09/27/2001WO2001071734A2 Multi-layer tunneling device with a graded stoichiometry insulating layer
09/27/2001WO2001070873A2 Nanocylinder arrays
09/27/2001US20010024739 Surface mounting type planar magnetic device and production method thereof
09/27/2001US20010024388 Magnetoresistive element and use thereof as a memory element in a memory cell configuration
09/27/2001US20010024347 Tunnel magnetoresistive element, thin-film magnetic head and memory element, and methods of manufacturing same
09/27/2001US20010023932 Bismuth-substituted rare earth-iron; minimal cracking while growing, cooling or polishing and worked; controlled liquid-phase epitaxial growth
09/27/2001CA2404296A1 Nanocylinder arrays
09/26/2001EP1135772A1 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
09/26/2001EP1135696A1 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
09/26/2001CN1314506A Magnetic garnet monocrystal film and its preparation, and Faraday rotor using said monocrystal film
09/25/2001US6295186 Used as a magnetic head, a potentiosensor, an angular sensor
09/20/2001US20010022742 Reference layer structure in a magnetic storage cell
09/20/2001US20010022373 Magnetic memory element and magnetic memory using the same
09/19/2001EP1134815A2 Magnetoresistance effect device, and method for producing the same
09/18/2001US6292389 Magnetic element with improved field response and fabricating method thereof
09/18/2001US6292336 Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient
09/18/2001US6291993 Magnetic field sensor and method for making same
09/18/2001US6290783 For motros, transformers
09/13/2001WO2001067469A1 Magnetic field element having a biasing magnetic layer structure
09/13/2001WO2001067460A1 Magnetic device with a coupling layer and method of manufacturing and operation of such device
09/13/2001US20010021537 Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
09/13/2001US20010021125 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
09/13/2001US20010021089 Magnetoresistive-effect element
09/13/2001DE10009944A1 Arrangement for measuring magnetic field comprises first layer and second layer having electrically conducting antiferromagnetic layer bordering soft magnetic layer
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