Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
05/2001
05/31/2001WO2001039195A1 Spin dependent tunneling memory
05/30/2001EP1103049A2 Magnetic memory
05/30/2001CN1297533A Magnetic sensor and its production method, ferromagnetic tunnel junction device and its production method, and magnetic head using same
05/29/2001US6238531 Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
05/29/2001US6238492 Soft magnetic thin film, method for preparing same and magnetic head
05/23/2001EP1102285A2 Magneto-optical member
05/23/2001CN1296307A Inreversible circuit element
05/23/2001CN1066277C Device and method for detecting magnetic field
05/16/2001EP1099217A2 Electric field for magnetic reversal of a thin film
05/15/2001US6233172 Magnetic element with dual magnetic states and fabrication method thereof
05/15/2001US6232777 Tunneling magnetoresistive element and magnetic sensor using the same
05/15/2001US6231968 Magnetic thin film and magnetic device using the same
05/10/2001WO2001033585A1 Synthesis and magnetoresistance test system using double-perovskite samples for preparation of a magnetoresistance device
05/10/2001DE19949713A1 Magnetoresistive layer system for giant magnetoresistive or tunnel magnetoresistive sensor or magnetic storage element, has structured surface in reference layer to prevent influence of external fields
05/09/2001EP1098203A2 Magnetic tunnel junction element, tunneling magnetoresistive head, and production methods
05/09/2001CN1294390A Field response reinforced magnetic component and its mfg. method
05/08/2001US6229154 Photo detecting element
05/03/2001WO2001031357A1 Spin-valve sensor
05/03/2001WO2001030511A1 Low temperature chemical vapor deposition of thin film magnets
05/02/2001EP1096500A1 Magnetization control method, information storage method, magnetic functional device, and information storage device
05/02/2001EP1096478A2 Trilayer seed layer structure for spin valve sensor
05/02/2001EP1096298A1 Optical isolator with a compact dimension
05/01/2001US6226160 Small area magnetic tunnel junction devices with low resistance and high magnetoresistance
05/01/2001US6226159 Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors
04/2001
04/27/2001CA2324676A1 Magneto-optical member
04/27/2001CA2324539A1 Optical isolator with a compact dimension
04/26/2001WO2001029851A1 Composite magnetic body and electromagnetic interference suppressing body using the same
04/26/2001WO2001029841A1 Phase transition control method of fractal combination, fractal combination, ferromagnetic fractal combination, information processing method, information storing method, information storing medium, information processing device and information recording device
04/26/2001WO2001029831A1 Magnetic recording device, method of adjusting magnetic head and magnetic recording medium
04/25/2001EP1094329A2 Magnetic element with improved field response and fabricative method thereof
04/25/2001CN1065062C Spin valve magneto-resistive effect magnetic head and magnetic disc drive
04/24/2001US6222707 Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer
04/24/2001US6221518 Multilayer films
04/24/2001US6221172 Forming magnetic moments of first and second pinned magnetic layers to have different values; thermally treating pinned magnetic layer while applying magnetic field to first pinned magnetic layer in first direction
04/19/2001DE10043920A1 Magnetic recording medium Magnetic recording medium
04/18/2001EP1068541A4 Magnetic digital signal coupler
04/18/2001CN1291769A Magnetic recording medium using antiferromagnet coupled ferromagnetic film as recording layer
04/17/2001US6219275 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
04/17/2001US6219212 Magnetic tunnel junction head structure with insulating antiferromagnetic layer
04/11/2001EP1091370A2 Magnetic optical member and method of producing the same
04/10/2001US6215696 Ferromagnetic tunnel junction device and method of forming the same
04/10/2001US6215631 Magnetoresistive effect film and manufacturing method therefor
04/10/2001US6215301 Magnetoresistive detector comprising a layer structure and a current directing means
04/04/2001CN1064132C Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
04/04/2001CA2313768A1 Magnetic optical member and method of producing the same
04/03/2001US6211559 Symmetric magnetic tunnel device
04/03/2001US6210818 Magnetoresistive element
04/03/2001US6210810 Magnetoresistance device
04/03/2001US6210543 Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method
03/2001
03/29/2001DE19936896C1 Production of nanometer thick antiferromagnetic or pinning layers in the form of oxidized, pure or alloyed transition metal layers in magnetic multiple layer systems comprises using a thin
03/27/2001US6208492 Seed layer structure for spin valve sensor
03/27/2001US6207313 Magnetic composites and methods for improved electrolysis
03/27/2001US6207303 Multilayer thin film inductor with multilayer magnetic film with resin layer
03/22/2001WO2001020356A1 Magnetoresistive sensor or memory elements with decreased magnetic switch field
03/21/2001EP1085586A2 Magnetoresistive element and magnetic memory device
03/21/2001CN1063562C Low profile thin film write head
03/20/2001US6205053 Magnetically stable magnetoresistive memory element
03/20/2001US6205052 Magnetic element with improved field response and fabricating method thereof
03/20/2001US6205008 Magnetic-resistance device, and magnetic head employing such a device
03/15/2001WO2001018816A1 Memory cell arrangement and operational method therefor
03/15/2001DE19942447A1 Speicherzellenanordnung und Verfahren zu deren Betrieb Memory cell arrangement and method of operation
03/15/2001DE10022372A1 Co-Fe-Ni-Magnetfilm mit hoher magnetischer Sättigungsflußdichte, den Film verwendender Dünnfilm-Verbundmagnetkopf und den Kopf verwendende Magnetspeichervorrichtung Co-Fe-Ni-magnetic film having high saturation magnetic flux density, the film used Direction thin film composite magnetic head and the magnetic memory device head used
03/13/2001US6201671 Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor
03/13/2001US6201669 Magnetoresistive element and its manufacturing method
03/13/2001US6201390 Defect analysis in magnetic thin films
03/13/2001US6201259 Tunneling magnetoresistance element, and magnetic sensor, magnetic head and magnetic memory using the element
03/08/2001WO2001016411A1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF
03/08/2001DE10036356A1 Magnetic thin film component with diode switched by controlling spin of injected electrons
03/06/2001US6198610 Magnetoresistive device and magnetoresistive head
03/06/2001US6198608 Magnetoresistive (mr) sensor has a read gap that is made of a slow ion milling rate material which allows a blunt end to be formed without overmilling into the read gap
03/06/2001US6197439 Exhibit antiferromagnetic coupling of the magnetic layers with coupling strengths useful in device design for magnetic read/write heads, and miniature transformers
02/2001
02/28/2001CN1285948A Highly oriented magnetic thin films, recording media, transducer, devices made therefrom and methods of making
02/28/2001CN1062670C Granular multilayer magnetoresistive sensor mfg. method
02/27/2001US6194896 Method of controlling magnetic characteristics of magnetoresistive effect element and of magnetic head with the element, magnetic head device with magnetoresistive effect element, and magnetic disk unit with the device
02/27/2001US6194091 Magnetic garnet single crystal film mixed oxide of yttrium, iron, indium, and gallium, aluminum, and/or scandium; time interval suffering the transient response phenomenon is shortened without increasing insertion loss; performance
02/21/2001EP1076907A1 Magnetic material
02/20/2001US6191577 Magnetic sensor exhibiting large change in resistance at low external magnetic field
02/14/2001EP1076243A2 Magneto-impedance effect element and method of manufacturing the same
02/13/2001US6188550 Self-longitudinally biased magnetoresistive read transducer
02/13/2001US6187458 Ferromagnetic fine line and magnetic apparatus thereof
02/13/2001US6187431 Magnetic recording medium
02/13/2001CA2237819C A micromagnetic device for power processing applications and method of manufacture therefor
02/07/2001EP1074872A2 Magnetic garnet single crystal and faraday rotator using the same
02/07/2001CN1282967A Magnetic garnet monocrystal and Farady rotor using said monocrystal
02/06/2001US6185079 Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
02/06/2001US6183881 Forming magnetic thin film on conductive film by electroplating using sulphate-chloride type acid plating bath containing nickel ions, iron ions, molybdenum ions and organic acid at specified concentration
02/06/2001US6183859 Low resistance MTJ
02/06/2001US6183568 Method for preparing a magnetic thin film
02/01/2001WO2001008176A1 Method of manufacturing a magnetic tunnel junction device
02/01/2001WO2001007926A1 Method of manufacturing a magnetic tunnel junction device
02/01/2001DE10029550A1 Verfahren zur Herstellung einer magnetischen einkristallinen Granatschicht und magnetische einkristalline Granatschicht von ungleichmäßiger Dicke A process for producing a magnetic garnet single-crystal layer and magnetic garnet single crystal layer of uniform thickness
01/2001
01/31/2001EP1073071A2 Magnetic multilayer
01/30/2001US6181534 Antiparallel (AP) pinned spin valve sensor with specular reflection of conduction electrons
01/30/2001US6181533 Simultaneous fixation of the magnetization direction in a dual GMR sensor's pinned layers
01/23/2001US6178073 Magneto-resistance effect element with a fixing layer formed from a superlattice of at least two different materials and production method of the same
01/23/2001US6178071 Spin-valve type thin film element and its manufacturing method
01/23/2001US6177204 Ferromagnetic GMR material and method of forming and using
01/18/2001WO2001004970A1 Ferromagnetic double quantum well tunnel magneto-resistance device
01/17/2001EP1068541A1 Magnetic digital signal coupler
01/11/2001DE19941046C1 Production of a magnetically sensitive layer arrangement used in GMR sensors comprises adjusting the temperature coefficient of the layer arrangement whilst the material of at least one layer is chemically modified
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