Patents
Sitemap › H01 - Basic electric elements › H01F - Magnets; Inductances; Transformers; Selection of materials for their magnetic properties › H01F 10 - Thin magnetic films, e.g. of one-domain structure
Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
01/2001
01/10/2001CN1279463A Soft magnetic film and magnetic head therewith
01/09/2001US6172904 Magnetic memory cell with symmetric switching characteristics
01/09/2001US6171716 Soft magnetic film, and thin film magnetic head, planer magnetic element, and filter using the soft magnetic film
01/09/2001US6171693 Structures with improved magnetic characteristics for giant magneto-resistance applications
01/09/2001US6171676 Magnetic recording medium containing fine magnetic crystal grains and its manufacture
01/03/2001EP1065679A2 Soft magnetic thin film and magnetic head incorporating the same
01/03/2001CN1278649A Method for making magnetic garnet monocrystal film and mangetic garnet monocrystal film with ununiform thickness
01/02/2001US6169303 Ferromagnetic tunnel junctions with enhanced magneto-resistance
01/02/2001US6168860 Magnetic structure with stratified layers
12/2000
12/28/2000WO2000079547A1 Organic-inorganic composite magnetic material and method for preparing the same
12/28/2000WO2000079298A2 Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems
12/28/2000DE10026050A1 Magnetic recording medium comprises a substrate, a support on the substrate, a granular ferromagnetic base layer made of a cobalt alloy on the support, and a ferromagnetic coating
12/28/2000DE10022762A1 Production of a layer made of a magnetic material comprises a pre-material layer on a support body and forming a magnetic material with a hard magnetic phase in the layer by melting the pre-material using a laser beam
12/26/2000US6166948 Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
12/26/2000US6165608 Magnetic recording medium
12/26/2000US6165607 Consisting essentially of mn and at least one kind of r element selected from a group of ni, pd, pt, co, rh, ir, v, nb, ta, cu, ag, au, ru, os, cr, mo, w, and re
12/26/2000US6165329 Multilayer magnetic transducer and structure having a high magnetoresistance and process for the production of the structure
12/26/2000US6165287 Forming oxide film on surface of ferromagnetic layer with thickness that allows tunneling of electrons; depositing metal layer; forming tunnel oxide film on metal layer by oxidizing surface of metal layer; forming ferromagnetic layer
12/21/2000WO2000076621A1 Magnetically enhanced composite materials and methods for making and using the same
12/20/2000EP1061592A2 Magneto-resistance effect element, and its use as memory element
12/19/2000US6163437 Magnetic head with spin valve effect magnetoresistive element and its manufacturing method
12/19/2000US6163234 Micromagnetic device for data transmission applications and method of manufacture therefor
12/19/2000US6162526 Magnetic recording medium having a crystalized glass substrate
12/13/2000CN1276608A Magnetic spin Co-Cu valve
12/13/2000CN1276595A Magnetic medium with covered ferromagnetic material for improving thermal stability
12/12/2000US6160721 Micromagnetic device for power processing applications and method of manufacture therefor
12/12/2000US6159594 Magnetic recording medium
12/12/2000US6159593 For use in magnetic heads
12/07/2000WO2000074154A1 Magnetoresistant device, method for manufacturing the same, and magnetic component
12/07/2000WO2000074042A1 Magnetic recording medium and production method therefor and magnetic recording device
12/06/2000EP1057187A1 Method of fabricating a magnetic random access memory
12/06/2000CN1275780A Top nailing type copper-manganese alloy magnetic spin valve
12/06/2000CN1275779A Copper-manganese alloy type magnetic spin valve
12/05/2000US6157524 Method of manufacturing spin-valve type thin film element having remagnetized bias layer
12/05/2000US6157523 Spin valve magnetoresistive head having magnetic layers with different internal stress
11/2000
11/29/2000EP1055957A2 Faraday rotator and magneto-optical element using the same
11/29/2000EP1055259A1 Magnetoresistor with tunnel effect and magnetic sensor using same
11/28/2000US6154349 Magnetoresistive transducer including CoFeZ soft magnetic layer
11/28/2000US6153443 Method of fabricating a magnetic random access memory
11/28/2000US6153321 Method of using a substrate with magnetic substance of a magnetic scale
11/28/2000US6153320 Laminated ferromagnetic layers containing antiferromagnetically coupled ferromagnetic films joining together with improved antiferromagnetically coupling films which are made of an alloy of ruthenium, osmium and rhenium
11/28/2000US6153319 Spin-valve type thin film element
11/28/2000US6153062 Magnetoresistive sensor and head
11/23/2000DE10023375A1 Magnetic reading head used in computers contains spin valve sensor with ferromagnetic free layer, ferromagnetic anchored layer structure, and non-magnetic electrically conducting layer
11/22/2000CN1274475A Magnetic tunnel device, method of mfg. thereof and magnetic head
11/22/2000CN1058760C Cerium-containing magnetic garnet single crystal and prodn. method therefor
11/21/2000US6150046 Upper core layer made of a mixed oxide of iron and specified element(s) to have high saturation magnetic flux density, low coercive force and high resistivity; lower core layer made of soft magnetic material enabling recording at high frequency
11/21/2000US6150045 Improved micro-track asymmetry and diminishing barkhausen noise by setting the relative angle between magnetization in the track width region of the pinned magnetic layer and magnetization of the free magnetic layer to about 90 degrees
11/15/2000EP1052520A1 Magnetoelectric device
11/15/2000EP1051635A1 Magnetoresistive magnetic field sensor
11/14/2000US6147900 Spin dependent tunneling memory
11/14/2000US6147843 Magnetic sensor
11/14/2000US6146776 Magneto-resistance effect head
11/14/2000US6146775 Magnetoresistive film
11/14/2000US6146761 Functional particle-dispersed thin film, granular magnetic thin film and production processes thereof
11/08/2000EP1050889A2 Magnetic ferrite film and preparation method
11/07/2000US6144524 Spin valve magnetoresistance device and method of designing the same
11/07/2000US6143435 Magneto-optical structures applicable in systems for optical processing of information, in sensors and converters of magnetic field; a bismuth containing gallium ferrite-garnet is chosen as the magnetic material
11/02/2000WO2000065614A1 Method for forming magnetoresistance effect film
11/02/2000WO2000065578A1 Giant magnetoresistive sensor with pinning layer
11/02/2000WO2000065577A1 Exchange interaction bonding device and method for manufacturing the same, magnetoresistance effect device, and magnetic head
11/02/2000EP1048060A1 Semiconductor body having a surface provided with a coil having a magnetic core
10/2000
10/31/2000US6140902 Thin magnetic element and transformer
10/31/2000US6139908 Magnetoresistance device and production method thereof
10/26/2000WO2000063715A1 Spin valve sensor with specular electron scattering in free layer
10/26/2000WO2000063714A1 GIANT MAGNETORESISTIVE SENSOR WITH A CrMnPt PINNING LAYER AND A NiFeCr SEED LAYER
10/25/2000EP1046049A1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
10/25/2000EP1046046A1 Magnetoresistive sensor element, especially angular sensor element
10/24/2000US6136431 Soft magnetic thin film and magnetic head
10/19/2000WO2000062311A1 Magnetic materials
10/19/2000CA2366588A1 Magnetic materials
10/18/2000EP1045403A2 Magnetoresistance device
10/18/2000CN1057627C Magnetoresistive spin valve sensor having a nonmagnetic back layer
10/17/2000US6134091 Spin-valve magneto-resistive head with horizontal type structure
10/17/2000US6133732 Magnetoresistive effect element and shield magnetoresistive effect sensor
10/17/2000US6132892 Soft magnetic alloy film and manufacturing method thereof, and magnetic head incorporating the same
10/17/2000US6132567 By depositing a metalloid on a light rare earth-transition metal alloy using a sputtering method
10/11/2000EP1042684A1 Magnetic field sensor with perpendicular to layer sensitivity, comprising a giant magnetorisistance material or a spin tunnel junction
10/11/2000CN1269577A Edge offset magnetic-resistance sensor
10/10/2000US6130814 Current-induced magnetic switching device and memory including the same
10/10/2000US6129957 First annealing for setting a first antiferromagnetic, a second annealing for resetting a second antiferromagnetic layer, third annealing with no exteranl applied field at high temperature to rapair first exchange, enchance second
10/05/2000WO2000058977A1 Magnetic inlay structure
10/04/2000CN1268735A Anti-parallel pinning read magnetic head having higher giant magnetio-resistance
10/03/2000US6128167 Spin-valve magnetoresistive element
10/03/2000US6127045 Usable as a magnetic field sensor in magnetic disk drives or as a memory cell in a magnetic random access array
09/2000
09/27/2000EP1039560A2 A magnetoresistive element and a method of producing a crystal structure with colossal magnetoresistivity
09/27/2000EP1039490A1 Pinning layer for magnetic devices
09/27/2000EP1038325A1 Fabricating an mtj with low areal resistance
09/27/2000EP1038324A1 Low resistance magnetic tunneling junction
09/26/2000US6125019 Magnetic head including magnetoresistive element
09/26/2000US6124047 Soft magnetic film and a magnetic head of an MR/inductive composite type using such a soft magnetic film
09/26/2000US6124020 Magnetic recording medium and production method thereof
09/26/2000US6123781 Method of controlling magnetic characteristics of spin-valve magnetoresistive element and of magnetic head with the element
09/21/2000WO2000055871A1 Thin film of molecular magnetic material
09/21/2000WO2000055384A1 Method and device for coating a support body with a hard magnetic se-fe-b material using plasma spraying
09/21/2000WO2000030077A9 Differential vgmr sensor
09/21/2000DE10010080A1 Magnetostatic wave device, has substrate with monocrystalline film provided on substrate having two layers with magnetizations of different saturation
09/21/2000DE10002346A1 Verfahren und Vorrichtung zur Beschichtung eines Trägerkörpers mit einem hartmagnetischen SE-FE-B-Material mittels Plasmaspritzens Method and apparatus for coating a substrate body with a hard magnetic SE-Fe-B material means of plasma
09/20/2000EP0937302A4 Spin dependent tunneling memory
09/20/2000CN1266913A Magnetostatic wave device
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