Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
09/2003
09/25/2003US20030179510 Magnetic head, magnetic head gimbal assembly, magnetic recording and reproducing apparatus, and magnetic memory
09/25/2003US20030179071 Magnetoresistive element
09/24/2003CN1444762A Laminated magnetic recording media
09/23/2003US6625059 Synthetic ferrimagnet reference layer for a magnetic storage device
09/23/2003US6625058 Method for magnetic characteristics modulation and magnetically functioning apparatus
09/23/2003US6624987 Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material
09/23/2003US6624498 Micromagnetic device having alloy of cobalt, phosphorus and iron
09/23/2003US6624490 Unipolar spin diode and the applications of the same
09/23/2003US6623875 Magnetic recording medium and magnetic storage apparatus
09/23/2003US6623857 Nanogranular thin film and magnetic recording media
09/23/2003US6623789 Method for fabricating a magnetic recording medium
09/18/2003WO2003077257A1 Multi-stage per cell magnetoresistive random access memory
09/18/2003US20030175546 Alternating iron, platinum layers
09/18/2003US20030174446 Magnetic sensing element with side shield layers
09/17/2003EP1345277A1 Magnetoresistive device, magnetic head, and magnetic disk player
09/17/2003EP1345231A1 Double magnetic tunnelling junction cell with reference layers dynamically set
09/17/2003CN1443357A Thin film rare earth permanent magnet, and method for mfg. same
09/17/2003CN1442861A Synthetic ferromagnet reference layer for magnetic storage device
09/16/2003US6621732 Magnetic element, memory device and write head
09/16/2003US6621666 Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity
09/16/2003US6621100 Polymer-, organic-, and molecular-based spintronic devices
09/16/2003US6620530 Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it
09/16/2003US6620481 Magnetic recording medium, magnetic recording medium manufacture method, and information regeneration apparatus
09/12/2003WO2002084647A8 Antiferromagnetic layer system and methods for magnetically storing data in antiferromagnetic layer systems of the like
09/11/2003US20030170484 Coating perovskite oxides on single crystal structured substrates, then oxidizing in oxygen or air to from metal oxide layers for use in magnetic heads or detectors
09/11/2003US20030170471 Ferromagnetic optically variable pigments consisting of multilayer flakes of light reflectors, transmitters and adsorbers, used in documents; anticounterfeiting
09/11/2003US20030170383 Nanostructures
09/11/2003US20030169620 Synthetic ferrimagnet reference layer for a magnetic storage device
09/11/2003US20030169543 Magnetoresistance effect film and device
09/11/2003US20030169538 Dual spin-valve magnetoresistive thin film element
09/11/2003US20030168673 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
09/10/2003EP1343170A2 A magnetic storage device
09/04/2003WO2002005318A3 High density giant magnetoresistive memory cell
09/04/2003US20030165615 Vapor deposition with electroconductive metal, or alloy thereof; oxidation
09/04/2003US20030163913 Method for manufacturing magnetic sensing element having improved magnetic field sensitivity
09/03/2003EP1340716A1 Ferrite thin film for high frequency and method for preparation thereof
09/03/2003EP1340269A2 Thin films for magnetic devices
09/03/2003EP1250470B1 Nano-material
09/03/2003CN1439749A Magnetic garnet material, Faraday rotor, optical element, bismuth substituted rare earth almandine monocrystal film and its preparation and crucible
09/02/2003US6614630 Top spin valve heads for ultra-high recording density
09/02/2003US6614084 Magnetic materials
09/02/2003US6614046 Nuclear spin control device
09/02/2003US6613448 Magnetoresistance effect film and method of forming same
09/02/2003US6613380 Pinned layer since a ruthenium (Ru) spacer layer in the AP pinned layer blocks conduction electrons. On the same side of the AP pinned layer a second pinned layer may be employed. With this arrangement the specular reflection layer reflects
08/2003
08/28/2003WO2003071300A1 Magnetoresistive spin-valve sensor and magnetic storage apparatus
08/28/2003US20030162344 Method for manufacturing magnetoresistance effect device and method for manufacturing magnetoresistance effect magnetic head
08/28/2003US20030162041 Perpendicular magnetic recording medium and process of production thereof
08/28/2003US20030161080 Magnetoresistive sensor, thin-film read/write head, and magnetic recording apparatus using the sensor
08/28/2003US20030161079 Magnetic head, and the magnetic read-write devices, and the magnetic memory with magnetic sensors
08/28/2003US20030161077 Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus
08/27/2003EP1103049B1 Magnetic memory
08/27/2003CN1438355A Method for preparing anisotropic magnetic resistance permalloy film
08/26/2003US6611405 Magnetoresistive element and magnetic memory device
08/26/2003US6611034 Magnetic device and solid-state magnetic memory
08/26/2003US6610421 Spin electronic material and fabrication method thereof
08/26/2003US6610413 Biaxially textured articles formed by powder metallurgy
08/21/2003WO2003069691A1 Magnetic reluctance element and method for preparation thereof and nonvolatile memory comprising the element
08/21/2003WO2003069674A1 Magnetic memory device and its production method
08/21/2003WO2002101750A3 Digital magnetic storage cell device
08/21/2003US20030157370 Magnetic recording medium and method for manufacturing the same
08/21/2003US20030156361 Narrow track width; high density magnetic recording media
08/21/2003US20030156360 Multilayer film; antiferromagnetic, ferromagnetic and nonmagnetic layers; high density magnetic recording media
08/21/2003US20030156359 Thin-film electrode layer, thin film magnetic head using the same, and method for forming electrodes in a thin film magnetic head
08/20/2003CN1437772A Magnetoresistance effect device and magnetoresistance effect head cmprising the same, and magnetic storing and regenerating apparatus
08/20/2003CN1437748A Magnetic recording medium and method for fabricating a magnetic recording medium
08/19/2003US6608740 Spin-valve thin-film magnetic element provided with single free magnetic layer
08/19/2003US6608739 Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions
08/19/2003US6608738 Magnetoresistance effect device utilizing an oxide film to produce antiferromagnetic exchange-coupling between first and second magnetic films in either the pinned layer or the free layer of the device
08/19/2003US6607839 Biaxially textured articles formed by powder metallurgy
08/19/2003US6607838 Biaxially textured articles formed by powder metallurgy
08/19/2003US6607641 Using antiferromagnetic material comprising manganese and platinum group metals; heat treatment of thin film magnetic heads
08/14/2003WO2003067600A2 Antiferromagnetically stabilized pseudo spin valve for memory applications
08/14/2003US20030152805 Magnetic media with improved exchange coupling
08/14/2003US20030151859 Magnetoresistive effect element, magneto-resistive effect head, method for manufacturing the same and magnetic recording apparatus using the same
08/14/2003US20030150898 Micromagnetic device for power processing applications and method of manufacture therefor
08/13/2003CN1118074C Magnetic spin Co-Cu valve and producing process thereof
08/12/2003US6605836 Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information
08/12/2003US6605374 Multilayer; substrate, undercoating, crystal or amorphous magnetic particles
08/07/2003US20030148143 High reliability magnetic storage apparatus capable of performing writing and reading back of high density information. The magnetic storage apparatus is so configured as to have a longitudinal magnetic recording medium including:
08/07/2003US20030147183 Soft magnetic film having higher saturation magnetization
08/07/2003US20030147176 Soft magnetic film having saturation magnetic flux density Bs of at least 2.0 T and magnetic head including the same
08/07/2003US20030146459 Antiferromagnetically stabilized pseudo spin valve for memory applications
08/07/2003US20030146086 Production method for spin valve film and production method of magnetoresistance effect type magnetic head
08/06/2003EP0882289B1 Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
08/05/2003US6603677 Three-layered stacked magnetic spin polarization device with memory
08/05/2003US6603642 Magnetic transducer having a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers and a fixed-orientation-of-magnetization layer and thin film magnetic head including the magnetic transducer
08/05/2003US6603382 Inductive element having improved superposed DC current characteristic
08/05/2003US6602313 Nickel, aluminum alloy
07/2003
07/31/2003WO2003061755A2 Nanomagnetically shielded substrate
07/31/2003WO2003032339A3 Process for fabricating an article comprising a magneto-optic garnet material
07/31/2003WO2002084647A3 Antiferromagnetic layer system and methods for magnetically storing data in antiferromagnetic layer systems of the like
07/31/2003US20030143433 Perpendicular-magnetic recording media and magnetic recording apparatus
07/31/2003US20030143431 CPP magnetic sensing element in which pinned magnetic layers of upper and lower multilayer films are magnetized antiparallel to each other, method for making the same, and magnetic sensing device including the same
07/31/2003US20030142562 Magnetoresistive memory cell with polarity-dependent resistance
07/31/2003US20030142539 Spin switch and magnetic storage element using it
07/30/2003EP1161570B1 Method for coating a support body with a hard magnetic se-fe-b material using plasma spraying
07/30/2003CN1116687C Top nailing type copper manganese alloy magnetic spin valve
07/30/2003CN1116686C Copper manganese alloy type magnetic spin valve
07/29/2003US6600314 Thickness of spin polarization layer stacked on soft magnetic layer has higher coercive force
07/29/2003US6600184 System and method for improving magnetic tunnel junction sensor magnetoresistance
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