Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2006
10/31/2006US7130216 One-device non-volatile random access memory cell
10/31/2006US7130214 Low-current and high-speed phase-change memory devices and methods of driving the same
10/31/2006US7129560 Thermal memory cell and memory device including the thermal memory cell
10/31/2006US7129539 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
10/26/2006WO2006112006A1 Nonvolatile semiconductor storage device
10/26/2006US20060242485 Error detection, documentation, and correction in a flash memory device
10/26/2006US20060240653 One-device non-volatile random access memory cell
10/26/2006US20060240626 Write once read only memory employing charge trapping in insulators
10/26/2006US20060239111 Non-volatile semiconductor device and method for automatically recovering erase failure in the device
10/26/2006US20060239099 No-precharge FAMOS cell and latch circuit in a memory device
10/26/2006US20060239083 Nand flash memory device and methods of its formation and operation
10/26/2006US20060239082 Driver circuit
10/26/2006US20060239081 NAND flash memory with read and verification threshold uniformity
10/26/2006US20060239079 Noise Reduction Technique for Transistors and Small Devices Utilizing an Episodic Agitation
10/26/2006US20060239078 NOR flash memory device using bit scan method and related programming method
10/26/2006US20060239077 NAND Flash Memory Device Having Dummy Memory cells and Methods of Operating Same
10/26/2006US20060239076 Non-volatile memory electronic device with nand structure being monolithically integrated on semiconductor
10/26/2006US20060239075 NAND flash memory management
10/26/2006US20060239073 Semiconductor memory device
10/26/2006US20060239072 Nonvolatile memory device and semiconductor device
10/26/2006US20060239070 High density memory array system
10/26/2006US20060239069 Semiconductor integrated circuit device having nonvolatile semiconductor memory and programming method thereof
10/26/2006US20060239068 Static random access memory cell
10/26/2006US20060237768 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
10/26/2006DE10259054B4 Spannungsgeneratoranordnung Voltage generator arrangement
10/26/2006DE102005030874B3 Non-volatile memory e.g. ROM, cell state detecting method, involves keeping voltage of one capacitance constant, so that current of another capacitance flows to cell arrangement and through memory cell
10/25/2006EP1715491A2 Process for manufacturing a non-volatile memory device
10/25/2006EP1715490A1 A non-volatile semiconductor memory
10/25/2006EP1714294A1 Nonvolatile memory
10/25/2006EP1714293A1 Charge packet metering for coarse /fine programming of non-volatile memory
10/25/2006EP1714292A1 Non-volatile memory cell using high-k material and inter-gate programming
10/25/2006EP1714291A2 Self-boosting system for flash memory cells
10/25/2006EP1714290A2 Efficient verification for coarse/fine programming of non-volatile memory
10/25/2006EP1714288A2 Secured phase-change devices
10/25/2006EP1714286A2 High voltage driver circuit with fast reading operation
10/25/2006CN2831249Y USB device having chip card reader and fast flash memory hard disk functions
10/25/2006CN1853241A Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
10/25/2006CN1853240A Detecting over programmed memory cells after programming of adjacent memory cells
10/25/2006CN1853239A Detecting over programmed memory
10/25/2006CN1851825A Efficient storage and relating method
10/25/2006CN1282089C Device and method for controllintg proper execution in serial flash memory and corresponding chip
10/24/2006US7127622 Memory subsystem voltage control and method
10/24/2006US7127552 Using transfer bits during data transfer from non-volatile to volatile memories
10/24/2006US7126873 Method and system for expanding flash storage device capacity
10/24/2006US7126872 Semiconductor integrated circuit
10/24/2006US7126862 Decoder for memory device
10/24/2006US7126861 Programmable control of leakage current
10/24/2006US7126859 Semiconductor integrated circuit that handles the input/output of a signal with an external circuit
10/24/2006US7126857 Storage subsystem with embedded circuit for protecting against anomalies in power signal from host
10/24/2006US7126855 Semiconductor device that enables simultaneous read and write/read operation
10/24/2006US7126854 Technique for programming floating-gate transistor used in circuitry as flash EPROM
10/24/2006US7126853 Electronic memory having impedance-matched sensing
10/24/2006US7126852 Semiconductor memory device having an error correcting code circuit
10/24/2006US7126851 Method of transferring initially-setting data in a non-volatile semiconductor memory
10/24/2006US7126850 Semiconductor nonvolatile memory device
10/24/2006US7126847 Method and driver for programming phase change memory cell
10/24/2006US7126846 Method and driver for programming phase change memory cell
10/24/2006US7126841 Non-volatile memory with a single transistor and resistive memory element
10/24/2006US7126836 Semiconductor device, system device using it, and manufacturing method of a semiconductor device
10/24/2006US7126379 Output device for static random access memory
10/24/2006US7126317 Apparatus and methods for regulated voltage
10/24/2006US7126188 Vertical split gate memory cell and manufacturing method thereof
10/24/2006US7126184 Nonvolatile semiconductor memory device and a method of the same
10/24/2006US7126183 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
10/24/2006US7126152 Storage device
10/24/2006US7125772 Nonvolatile memory
10/24/2006US7125771 Methods for fabricating nonvolatile memory device
10/19/2006WO2006110518A2 Heating phase change material
10/19/2006WO2006110395A1 Split gate multi-bit memory cell
10/19/2006WO2006108755A1 Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data i/o bus
10/19/2006WO2006058892A3 Memory system with sector buffers
10/19/2006WO2006058134A3 Method and system for regulating a program voltage value during multilevel memory device programming
10/19/2006WO2005076281A8 Nonvolatile memory
10/19/2006US20060236207 Error detection, documentation, and correction in a flash memory device
10/19/2006US20060236044 Method and system for enhancing the endurance of memory cells
10/19/2006US20060235914 Method and apparatus for providing packed shift operations in a processor
10/19/2006US20060234450 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
10/19/2006US20060234394 Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
10/19/2006US20060233032 Non-volatile semiconductor memory device
10/19/2006US20060233023 Method for Non-Volatile Memory with Background Data Latch Caching During Erase Operations
10/19/2006US20060233022 Non-Volatile Memory with Background Data Latch Caching During Program Operations
10/19/2006US20060233021 Non-Volatile Memory with Background Data Latch Caching During Erase Operations
10/19/2006US20060233020 Monitoring the threshold voltage of frequently read cells
10/19/2006US20060232796 Processing of images for high volume pagewidth printing
10/19/2006US20060231886 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
10/19/2006DE112004002399T5 Flash-Speicherbauelement Flash memory device
10/19/2006DE102006007201A1 Electronic data storage device, has data classification unit classifying data into assigned data with higher access frequency and free data, where free data that are not frequently accessed are stored in memory with lower data access speed
10/19/2006DE102005017298A1 Sequence program writing method for e.g. microcontroller`s flash memory in automobile electronics, involves executing control program independent of sequence program to initialize interface protocols, and writing former program by protocols
10/19/2006DE102005016244A1 Non-volatile memory cell for memory device, has memory material region provided as memory unit between two electrodes, where region is formed with or from self-organised nano-structure, which is partially or completely oxidic
10/18/2006EP1713129A2 Threshold voltage shift in NROM cells
10/18/2006EP1713085A1 Automated wear leveling in non-volatile storage systems
10/18/2006EP1713084A1 Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor
10/18/2006EP1713083A1 Non-volatile memory electronic device with NAND structure being monolithically integrated on semiconductor
10/18/2006EP1713081A1 Electronic non-volatile memory device having a "code NAND" structure and being monolithically integrated on a semiconductor substrate
10/18/2006EP1713080A1 Mobile communication device having integrated embedded flash and SRAM
10/18/2006EP1713079A1 Mobile communication device having integrated embedded flash and sram memory
10/18/2006EP1712985A1 Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data I/O bus
10/18/2006EP1711950A1 Programming non-volatile memory
10/18/2006EP1711949A1 Method of reading nand memory to compensate for coupling between storage elements
10/18/2006EP1711948A2 Variable current sinking for coarse/fine programming of non-volatile memory