Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2006
12/07/2006WO2006129344A1 Semiconductor device
12/07/2006WO2006129339A1 Storage apparatus and method for controlling storage apparatus
12/07/2006WO2006128922A1 Method for extracting the distribution of charge stored in a semiconductor device
12/07/2006WO2006067791A3 A method for using a multi-bit cell flash device in a system not designed for the device
12/07/2006WO2005112035A3 Nonvolatile memory array organization and usage
12/07/2006US20060274593 Semiconductor integrated circuit device
12/07/2006US20060274583 Starting program voltage shift with cycling of non-volatile memory
12/07/2006US20060274580 DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
12/07/2006US20060274579 Multi-voltage generator generating program voltage, read voltage and high voltage in response to operating mode of flash memory device
12/07/2006US20060274578 NAND flash memory device having page buffer adapted to discharge bit line voltage during erase operation
12/07/2006US20060274577 Non-volatile memory electronic device with nand structure being monolithically integrated on semiconductor
12/07/2006US20060274576 Sensing scheme for a non-volatile semiconductor memory cell
12/07/2006US20060274574 Phase-change memory device and method of writing a phase-change memory device
12/07/2006DE102006024116A1 Wortleitungsspannungsgeneratorschaltung und zugehöriges nichtflüchtiges Speicherbauelement Word line voltage generator circuit and associated non-volatile memory device
12/07/2006DE102005060386A1 Programmierverfahren einer Flash-Speichervorrichtung A programming method of a flash memory device
12/07/2006DE102005030661A1 Nichtflüchtiges Halbleiterspeicherbauelement und Verfahren zum Betreiben und Herstellen eines nichtflüchtigen Halbleiterspeicherbauelementes A non-volatile semiconductor memory device and methods of operating and manufacturing a nonvolatile semiconductor memory device
12/07/2006DE102005024897A1 Non-volatile memory cell e.g. flash memory cell, for semiconductor device, has transistors reducing leakage currents that flow through non-volatile programmable resistors, respectively
12/07/2006CA2610061A1 Semiconductor memory device
12/06/2006EP1729306A1 NAND flash memory device with compacted cell threshold voltage distribution
12/06/2006EP1729305A1 Semiconductor device and method for writing data in semiconductor device
12/06/2006EP1729304A1 Space management for managing high capacity nonvolatile memory
12/06/2006EP1729302A1 A circuit for retrieving data stored in semiconductor memory cells
12/06/2006CN1875468A Method of making nonvolatile transistor pairs with shared control gate
12/06/2006CN1875429A Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
12/06/2006CN1873956A Method for dynamic adjusting operation of memory chip, and device for measuring thickness of 0N0 layer
12/06/2006CN1873828A 非易失性半导体存储装置 Nonvolatile semiconductor memory device
12/06/2006CN1288665C Semiconductor storage device and information apparatus
12/06/2006CN1288547C Controller and method for writing data
12/05/2006US7146472 Method for modification of data on a memory card on a transaction
12/05/2006US7145813 Semiconductor device with circuit for detecting abnormal waveform of signal and preventing the signal from being transmitted
12/05/2006US7145809 Method for programming multi-level cell
12/05/2006US7145808 Nonvolatile semiconductor memory apparatus and method of producing the same
12/05/2006US7145807 Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories
12/05/2006US7145806 Semiconductor memory device and method of controlling write sequence thereof
12/05/2006US7145805 Nonvolatile memory system, semiconductor memory, and writing method
12/05/2006US7145804 Method of reducing disturbs in non-volatile memory
12/05/2006US7145803 Semiconductor memory device
12/05/2006US7145801 External storage device
12/05/2006US7145800 Preconditioning of defective and redundant columns in a memory device
12/05/2006US7145799 Chip protection register unlocking
12/05/2006US7145794 Programmable microelectronic devices and methods of forming and programming same
12/05/2006US7145791 Memory device having variable resistive memory element
12/05/2006US7145790 Phase change resistor cell and nonvolatile memory device using the same
12/05/2006US7145428 Circuit substrate
12/05/2006US7145382 Charge pump circuit suitable for low-voltage process
12/05/2006US7144778 Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line
11/2006
11/30/2006WO2006126246A1 Rfid tag apparatus
11/30/2006WO2006110518A3 Heating phase change material
11/30/2006WO2006107796A3 Faster programming of higher level states in multi-level cell flash memory
11/30/2006US20060270160 Vertical transistor with horizontal gate layers
11/30/2006US20060268621 Method for programming a reference cell
11/30/2006US20060268618 Non-Volatile System with Program Time Control
11/30/2006US20060268617 Nitride read-only memory (NROM) device and method for reading the same
11/30/2006US20060268616 Fuse memory cell with improved protection against unauthorized access
11/30/2006US20060268615 Nonvolatile semiconductor static random access memory device
11/30/2006US20060268614 User configurable commands for flash memory
11/30/2006US20060268613 User configurable commands for flash memory
11/30/2006US20060268612 Semiconductor memory device
11/30/2006US20060268611 Method of programming of a non-volatile memory cell
11/30/2006US20060268610 Nonvolatile memory system, semiconductor memory, and writing method
11/30/2006US20060268609 Memory card providing hardware acceleration for read operations
11/30/2006US20060268608 Data storage system
11/30/2006US20060268607 Operation method of non-volatile memory structure
11/30/2006US20060268605 Thin film magnetic memory device storing program information efficiently and stably
11/30/2006US20060268603 Programming method for non-volatile memory
11/30/2006DE102006024655A1 Speicherkarte und Speichersteuereinheit Memory card and memory controller
11/30/2006DE102005025166A1 Verfahren zum Anpassen von Schaltungskomponenten eines Speichermoduls und Speichermodul A method of adapting circuit components of a memory module and memory module
11/29/2006EP1727153A1 Discharge circuit for a word-erasable flash memory device
11/29/2006EP1727152A1 EEPROM memory architecture
11/29/2006EP1727151A1 Method for operating a PMC memory and CBRAM memory circuit
11/29/2006EP1727146A1 Charge-pump type voltage-boosting device with reduced ripple, in particular for non-volatile flash memories
11/29/2006EP1726017A1 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
11/29/2006EP1725937A2 Flash controller cache architecture
11/29/2006CN2842660Y Character decoding circuit of low power consumption
11/29/2006CN2842659Y Flash memory protective circuit
11/29/2006CN1871592A Method and system for enhancing the endurance of memory cells
11/29/2006CN1871588A Method for writing memory sectors in a memory deletable by blocks
11/29/2006CN1870409A Apparatus for generating high-voltage and method thereof
11/29/2006CN1870274A 非易失性半导体存储器件 Non-volatile semiconductor memory device
11/29/2006CN1870272A Non-volatility memory and its operation method
11/29/2006CN1870177A Program method of flash memory device
11/29/2006CN1870176A Page buffer circuit, flash memory device and program operation method of the flash memory device
11/29/2006CN1287463C Memory cell array with individually addressable memory cells and method for production thereof
11/28/2006US7143255 Chip protection register lock circuit in a flash memory device
11/28/2006US7143229 Single-chip microcomputer with dynamic burn-in test function and dynamic burn-in testing method therefor
11/28/2006US7142459 Programming flash memories
11/28/2006US7142458 Nonvolatile semiconductor memory device and control method thereof
11/28/2006US7142457 Non-volatile semiconductor memory device
11/28/2006US7142455 Positive gate stress during erase to improve retention in multi-level, non-volatile flash memory
11/28/2006US7142454 System and method for Y-decoding in a flash memory device
11/28/2006US7142453 Semiconductor memory device and memory card
11/28/2006US7142452 Method and system for securing data in a multi-time programmable non-volatile memory device
11/28/2006US7142451 Nonvolatile semiconductor memory apparatus and method of producing the same
11/28/2006US7142450 Programmable sub-surface aggregating metallization structure and method of making same
11/28/2006US7141475 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
11/28/2006US7141474 Fabrication method of a nonvolatile semiconductor memory
11/23/2006WO2006124525A1 Selective application of program inhibit schemes in non-volatile memory
11/23/2006WO2006124524A1 Flash programming via lf communication
11/23/2006WO2006124352A2 Devices for programming a memory
11/23/2006WO2006124159A2 Sense amplifier circuit for parallel sensing of four current levels