Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2007
01/31/2007EP1748472A1 Non-volatile memory transistor
01/31/2007EP1747560A1 Latched programming of memory and method
01/31/2007EP1747559A2 Method and apparatus for a dual power supply to embedded non-volatile memory
01/31/2007CN1906756A Pillar cell flash memory technology
01/31/2007CN1906700A NAND memory array incorporating multiple series selection devices and method for operation of same
01/31/2007CN1905073A Semiconductor memory card and data reading apparatus
01/31/2007CN1905072A 3-level non-volatile semiconductor memory device and method of driving the same
01/31/2007CN1905071A Methods and circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
01/31/2007CN1905070A Flash memory device capable of storing multi-bit data and single-bit data
01/31/2007CN1905069A Method and apparatus for programming multi level cell flash memory device
01/31/2007CN1905068A Non-volatile memory device having improved program speed and associated programming method
01/31/2007CN1905067A Nonvolatile semiconductor memory device and signal processing system
01/31/2007CN1905066A 非易失性半导体存储器件 Non-volatile semiconductor memory device
01/31/2007CN1297991C Programming method and circuit for semiconductor memory unit and array
01/30/2007US7171536 Unusable block management within a non-volatile memory system
01/30/2007US7171513 Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
01/30/2007US7170798 Controlled substrate voltage for memory switches
01/30/2007US7170795 Electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
01/30/2007US7170794 Programming method of a non-volatile memory device having a charge storage layer between a gate electrode and a semiconductor substrate
01/30/2007US7170793 Programming inhibit for non-volatile memory
01/30/2007US7170791 Programming verification method of nonvolatile memory cell, semiconductor memory device, and portable electronic apparatus having the semiconductor memory device
01/30/2007US7170790 Sensing circuit
01/30/2007US7170788 Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb
01/30/2007US7170787 Nonvolatile memory apparatus
01/30/2007US7170786 Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
01/30/2007US7170785 Method and apparatus for operating a string of charge trapping memory cells
01/30/2007US7170784 Non-volatile memory and method with control gate compensation for source line bias errors
01/30/2007US7170783 Layout for NAND flash memory array having reduced word line impedance
01/30/2007US7170782 Method and structure for efficient data verification operation for non-volatile memories
01/30/2007US7170781 Multi-bit-per-cell flash EEPROM memory with refresh
01/30/2007US7170780 Semiconductor memory device and electric device with the same
01/30/2007US7170776 Non-volatile memory device conducting comparison operation
01/30/2007US7170132 Twin insulator charge storage device operation and its fabrication method
01/30/2007US7170107 IC chip having a protective structure
01/30/2007US7169667 Nonvolatile memory cell with multiple floating gates formed after the select gate
01/30/2007US7169635 Programmable structure, an array including the structure, and methods of forming the same
01/25/2007WO2007011582A2 High density nand non-volatile memory device
01/25/2007WO2007011037A1 Semiconductor memory having data rotation/interleave function
01/25/2007WO2006072945A3 Method of managing a multi-bit cell flash memory with improved reliability and performance
01/25/2007US20070022332 Background block erase check for flash memories
01/25/2007US20070021963 Data management method for slash memory medium
01/25/2007US20070020859 Method of making non-volatile field effect devices and arrays of same
01/25/2007US20070020854 Be-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
01/25/2007US20070019478 Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
01/25/2007US20070019477 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
01/25/2007US20070019476 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
01/25/2007US20070019475 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
01/25/2007US20070019474 Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals
01/25/2007US20070019473 Apparatus and method for improving write/read endurance of non-volatile memory
01/25/2007US20070019472 Electronic device including a memory array and conductive lines
01/25/2007US20070019471 Reduction of programming time in electrically programmable devices
01/25/2007US20070019470 Systems and methods for improved programming of flash based devices
01/25/2007US20070019469 Read-out circuit in semiconductor memory device
01/25/2007US20070019468 Page buffer circuit with reduced size and methods for reading and programming data with the same
01/25/2007US20070019467 Semiconductor memory device
01/25/2007US20070018692 SCL type FPGA with multi-threshold transistors and method for forming same
01/25/2007US20070018207 Split gate storage device including a horizontal first gate and a vertical second gate in a trench
01/25/2007US20070018157 Methods of forming phase change storage cells for memory devices
01/25/2007DE112004002678T5 2-Transistoren-Schmelzsicherungselement mit einzelner Polysiliziumschicht 2 transistors fuse element with single polysilicon layer
01/25/2007DE102006030645A1 Verfahren zum Behandeln eines Substrats beim Herstellen einer magnetoresistiven Speicherzelle A method for treating a substrate in manufacturing a magnetoresistive memory cell
01/25/2007DE102006027424A1 Zugriff auf eine NROM-Matrix Access to a NROM matrix
01/25/2007DE102005041276A1 Nicht-flüchtige Speicherzellen-Einrichtung, Programmierelement und Verfahren zum Programmieren von Daten in eine Mehrzahl von nicht-flüchtigen Speicherzellen The non-volatile memory cell device, programming element and method for programming data into a plurality of non-volatile memory cells
01/25/2007DE102005033003A1 Integrated circuit arrangement e.g. DC converter, for use in e.g. electrically erasable programmable ROM, has potential enhancing circuits with controllable switches, and N-doped or P-doped wells connected with outputs of circuits
01/25/2007DE102005030661B4 Nichtflüchtiges Halbleiterspeicherbauelement und Verfahren zum Betreiben und Herstellen eines nichtflüchtigen Halbleiterspeicherbauelementes A non-volatile semiconductor memory device and methods of operating and manufacturing a nonvolatile semiconductor memory device
01/24/2007EP1746605A1 Reading method of a nand-type memory device and NAND-type memory device
01/24/2007EP1745512A1 Nrom device
01/24/2007EP1430386B1 Method of writing data to non-volatile memory
01/24/2007EP1331671B1 Point contact array and electronic circuit comprising the same
01/24/2007EP1185985B1 Method and integrated circuit for bit line soft programming (blisp)
01/24/2007EP1091359B1 Nonvolatile semiconductor memory
01/24/2007CN1902712A Flash storage system with write/erase abort detection mechanism
01/24/2007CN1902711A Method, system and circuit for programming a non-volatile memory array
01/24/2007CN1902710A Method, circuit and system for read error detection in a non-volatile memory array
01/24/2007CN1902599A Management of non-volatile memory systems having large erase blocks
01/24/2007CN1901091A Page buffer circuit and methods for reading and programming data with the same
01/24/2007CN1296836C Circuit and method for implementing correction operation to only read memory in inlaid program
01/23/2007US7167944 Block management for mass storage
01/23/2007US7167943 Memory apparatus
01/23/2007US7167561 Recording apparatus, recording method, reproducing apparatus, and reproducing method
01/23/2007US7167402 Semiconductor storage device, redundancy circuit thereof, and portable electronic device
01/23/2007US7167399 Flash memory device with a variable erase pulse
01/23/2007US7167398 System and method for erasing a memory cell
01/23/2007US7167397 Apparatus and method for programming a memory array
01/23/2007US7167396 Erase verify for nonvolatile memory using reference current-to-voltage converters
01/23/2007US7167394 Sense amplifier for reading a cell of a non-volatile memory device
01/23/2007US7167393 Nonvolatile semiconductor memory device containing reference capacitor circuit
01/23/2007US7167392 Non-volatile memory cell with improved programming technique
01/23/2007US7167390 Storage device with resistive memory cells enduring repetitive data writing
01/23/2007US7166513 Manufacturing method a flash memory cell array
01/23/2007US7166509 Write once read only memory with large work function floating gates
01/23/2007US7166508 Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)
01/18/2007WO2007008745A1 Negative voltage discharge scheme to improve snapback in a non-volatile memory
01/18/2007WO2007008452A1 Process for erasing chalcogenide variable resistance memory bits
01/18/2007WO2006124352A3 Devices for programming a memory
01/18/2007US20070016741 Selectable block protection for non-volatile memory
01/18/2007US20070016738 Nonvolatile Semiconductor Memory
01/18/2007US20070016735 Flash memory device with improved management of protection information
01/18/2007US20070016723 Semiconductor Memory Device for Storing Multivalued Data
01/18/2007US20070015331 Nor flash memory cell with high storage density
01/18/2007US20070014162 Nonvolatile memory device including circuit formed of thin film transistors