Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2006
12/21/2006US20060285385 MTP storage medium and access algorithm method with traditional OTP
12/21/2006US20060285384 Non-volatile memory array with simultaneous write and erase feature
12/21/2006US20060284246 Memory utilizing oxide nanolaminates
12/21/2006DE102005030660B3 Erfassungsverfahren für eine nichtflüchtige Halbleiterspeicherzelle Detection method for a nonvolatile semiconductor memory cell
12/21/2006DE102005030142B3 Non-volatile memory cell for shift register, has bistable flip-flop for volatile storage of binary information, and single binary programmable resistor securing information stored in flip-flop, during transition into power-down mode
12/21/2006DE102004030230B4 Verfahren zur Aktualisierung der Betriebssoftware für eine Einrichtung mit einem programmierbaren Logikbaustein Procedure for updating the operating software for a device with a programmable logic device
12/21/2006DE10052326B4 Nichtflüchtiges Halbleiterspeicherbauelement und Programmierverfahren hierfür A non-volatile semiconductor memory device and programming method therefor
12/20/2006EP1734536A1 Memory protected against error injection attacks on memory cell selecting signals
12/20/2006EP1733398A2 Circuit for accessing a chalcogenide memory array
12/20/2006EP1685571A4 A method circuit and system for determining a reference voltage
12/20/2006CN1883047A Apparatus and method for split gate NROM memory
12/20/2006CN1883046A Charge-trapping memory device and methods for operating and manufacturing the cell
12/20/2006CN1883009A Non-volatile memory and method with bit line coupled compensation
12/20/2006CN1883008A Embedded memory with security row lock protection
12/20/2006CN1882922A System and method for operating dual bank read-while-write flash
12/20/2006CN1881592A Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
12/20/2006CN1881473A Method of controlling copy-back operation of flash memory device including multi-level cells
12/20/2006CN1881472A Bit reading method for silicon nitride read-only memory unit
12/20/2006CN1881471A 半导体集成电路器件 The semiconductor integrated circuit device
12/20/2006CN1881470A Memory cells and identification method and memory array and detection method thereof
12/20/2006CN1881469A Reading phase change memories without triggering reset cell threshode devices
12/20/2006CN1881205A Quick programming/debugging apparatus
12/19/2006US7151706 CMIS semiconductor nonvolatile storage circuit
12/19/2006US7151705 Non-volatile memory device architecture, for instance a flash kind, having a serial communication interface
12/19/2006US7151704 Semiconductor memory device
12/19/2006US7151702 High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices
12/19/2006US7151701 Self-adaptive program delay circuitry for programmable memories
12/19/2006US7151693 Method of writing data to a non-volatile semiconductor memory
12/19/2006US7151692 Operation scheme for programming charge trapping non-volatile memory
12/19/2006US7151686 Semiconductor memory device and electric device with the same
12/19/2006US7151685 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
12/19/2006US7151021 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
12/14/2006WO2006133419A1 Method of programming a memory device with different levels of current
12/14/2006WO2006132903A2 Non-volatile memory cells without diffusion junctions
12/14/2006WO2006132818A2 Starting program voltage shift with cycling of non-volatile memory
12/14/2006WO2006132813A1 Memory device with switching glass layer
12/14/2006WO2006097917A3 Method of achieving wear leveling in flash memory using relative grades
12/14/2006WO2006033719A3 Low voltage non-volatile memory cells using twin bit line current sensing
12/14/2006US20060282642 PC-connectivity for on-chip memory
12/14/2006US20060281247 Non-volitale semiconductor memory
12/14/2006US20060281217 Methods For Fabricating Phase Changeable Memory Devices
12/14/2006US20060280010 Storage device
12/14/2006US20060280000 CAcT-Tg (CATT) low voltage NVM cells
12/14/2006US20060279999 Methods of Erasing Flash Memory Devices by Applying Wordline Bias Voltages Having Multiple Levels and Related Flash Memory Devices
12/14/2006US20060279998 Low power NROM memory devices
12/14/2006US20060279996 Read source line compensation in a non-volatile memory
12/14/2006US20060279995 Nonvolatile memory
12/14/2006US20060279994 Flash memory device capable of reduced programming time
12/14/2006US20060279993 Semiconductor memory device which generates voltages correspoding to a plurality of threshold voltages
12/14/2006US20060279992 NAND flash memory devices having shielding lines between wordlines and selection lines
12/14/2006US20060279991 Nand type flash memory array and method for operating the same
12/14/2006US20060279990 Selective application of program inhibit schemes in non-volatile memory
12/14/2006US20060279989 Method of controlling copy-back operation of flash memory device including multi-level cells
12/14/2006US20060279988 System and method for matching resistance in a non-volatile memory
12/14/2006US20060279987 Leaf plot analysis technique for multiple-side operated devices
12/14/2006US20060278917 Floating gate structures
12/14/2006US20060278913 Non-volatile memory cells without diffusion junctions
12/14/2006DE102006028209A1 Verfahren zum Löschen von Speicherzellen einer Flash-Speichereinrichtung und Speichereinrichtung A method of erasing memory cells of a Flash memory device and memory means
12/14/2006DE102006023065A1 Flashspeicherbauelement und Programmierverfahren Flash memory device and programming method
12/13/2006EP1732081A1 Method for operating a non-volatile charge-trapping memory device and method for determining programming/erase parameters
12/13/2006EP1732080A1 Method for extracting the distribution of charge stored in a semiconductor device
12/13/2006EP1730778A1 Shield plate for limiting cross coupling between floating gates
12/13/2006EP1730747A1 Rewriteable electronic fuses
12/13/2006EP1430482B1 Segmented metal bitlines
12/13/2006CN1879234A Multiple bit chalcogenide storage device
12/13/2006CN1879177A NROM flash memory with self-aligned structural charge separation
12/13/2006CN1879175A Programming method based on the behaviour of non-volatile memory cenlls
12/13/2006CN1877836A Integrated circuit and related method of modifying a version number assigned to the integrated circuit
12/13/2006CN1877742A Read source line compensation in a non-volatile memory
12/13/2006CN1877741A Leaf plot analysis technique for multiple-side operated devices
12/13/2006CN1290118C Nonvolatile semiconductor memory device
12/13/2006CN1290023C Memory device, memory device control method, and information processing system
12/13/2006CN1290021C System and method for programming and reading update data in non-volatile memory
12/12/2006US7149940 Device and method for reading data stored in a semiconductor device having multilevel memory cells
12/12/2006US7149844 Non-volatile memory device
12/12/2006US7149143 Decoder for memory data bus
12/12/2006US7149132 Biasing circuit for use in a non-volatile memory device
12/12/2006US7149130 Page buffer circuit of flash memory device with reduced consumption power
12/12/2006US7149126 Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory
12/12/2006US7149124 Boosted substrate/tub programming for flash memories
12/12/2006US7149121 Method and apparatus for changing operating conditions of nonvolatile memory
12/12/2006US7149120 Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
12/12/2006US7149119 System and method of controlling a three-dimensional memory
12/12/2006US7149118 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
12/12/2006US7149117 Reduction of adjacent floating gate data pattern sensitivity
12/12/2006US7149116 Nonvolatile semiconductor memory and programming method for the same
12/12/2006US7149115 Nonvolatile memory device including circuit formed of thin film transistors
12/12/2006US7149113 Semiconductor integrated circuit device
12/12/2006US7149112 Semiconductor memory device with signal lines arranged across memory cell array thereof
12/12/2006US7149110 Seek window verify program system and method for a multilevel non-volatile memory integrated circuit system
12/12/2006US7149108 Memory array of a non-volatile RAM
12/12/2006US7149107 Providing a reference voltage to a cross point memory array
12/12/2006US7149103 Set programming methods and write driver circuits for a phase-change memory array
12/12/2006US7149100 Serial transistor-cell array architecture
12/12/2006US7148732 Semiconductor integrated circuit
12/12/2006US7148538 Vertical NAND flash memory array
12/07/2006WO2006130801A2 Tft charge storage memory cell having high-mobility corrugated channel and method of manufacturing the same
12/07/2006WO2006129780A1 Nonvolatile memory performing verify processing in sequential write
12/07/2006WO2006129779A1 Semiconductor storage apparatus
12/07/2006WO2006129345A1 Semiconductor device and program data redundant method