Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2007
02/22/2007DE102006034495A1 Verfahren zum Durchführen einer Programmieroperation eines nicht-flüchtigen Speicherbauelements und nicht-flüchtigen Speicherbauelement A method for performing a programming operation of a nonvolatile memory device and non-volatile memory device
02/22/2007DE102006034265A1 Verfahren zum Programmieren eines Flash-Speicherelements und Flash-Speicherelement Method for programming a flash memory device and flash memory element
02/22/2007DE102006032132A1 Schaltung und Verfahren zum Treiben einer Wortleitung eines Speicherbauelements Circuit and method for driving a word line of a memory device
02/22/2007DE102006031575A1 Page buffer for non-volatile memory device, e.g. flash memory, has shared sense circuit that joins latch input node to reference potential in response to voltages at sense node and at other cache latch node
02/22/2007DE102005018347B4 Flash-Speicherzelle, Flash-Speichervorrichtung und Herstellungsverfahren hierfür Flash memory cell flash memory device and manufacturing method thereof
02/22/2007DE102004053602B4 Speichersystem und Verfahren zur Steuerung eines Speicherbauelements, um verschiedenartige Charakteristika auf ein und demselben Speicherbauelement zu erzielen Storage system and method for controlling a memory device in order to achieve various characteristics in the same memory device
02/21/2007EP1755165A1 Semiconductor device
02/21/2007EP1755128A2 Method for reading non-volatile memory cells
02/21/2007EP1755127A2 A method of erasing non-volatile memory cells
02/21/2007EP1755126A1 Memory device that programs more than two states into memory cell
02/21/2007EP1755125A1 Method for operating a programmable metallization cell and electrical circuit
02/21/2007EP1754231A2 Memory device with user configurable density/performance
02/21/2007EP1623432A4 Semiconductor memory cell, array, architecture and device, and method of operating same
02/21/2007EP1620859A4 Reference current generator, and method of programming, adjusting and/or operating same
02/21/2007EP1327193B1 Burst read incorporating output based redundancy
02/21/2007CN1918663A Nonvolatile memory
02/21/2007CN1918662A Non-switching pre-and post-disturb compensational pulses
02/21/2007CN1918661A Secured phase-change devices
02/21/2007CN1918659A High voltage driver circuit with fast reading operation
02/21/2007CN1917249A Thin film plate phase change ram circuit and manufacturing method
02/21/2007CN1917217A Dense non-volatile memory array and method of fabrication
02/21/2007CN1917215A Operation method for memory in P type channel
02/21/2007CN1917213A Operation method for memory in P type channel
02/21/2007CN1917088A Flash array system and program current stablilization method
02/21/2007CN1917087A 非易失性半导体存储器 Nonvolatile semiconductor memory
02/21/2007CN1917086A Nonvolatile storage unit in high speed
02/20/2007US7181611 Power management block for use in a non-volatile memory system
02/20/2007US7180815 Semiconductor integrated circuit device
02/20/2007US7180811 Semiconductor memory device informing internal voltage level using ready/busy pin
02/20/2007US7180796 Boosted voltage generating circuit and semiconductor memory device having the same
02/20/2007US7180794 Oscillating circuit, booster circuit, nonvolatile memory device, and semiconductor device
02/20/2007US7180793 Semiconductor non-volatile storage device
02/20/2007US7180791 Flash with consistent latency for read operations
02/20/2007US7180789 Semiconductor memory device with MOS transistors, each having a floating gate and a control gate, and memory card including the same
02/20/2007US7180788 Nonvolatile semiconductor memory device
02/20/2007US7180787 Semiconductor memory device
02/20/2007US7180786 Row decoder for NAND memories
02/20/2007US7180785 Nonvolatile semiconductor memory device with a plurality of sectors
02/20/2007US7180784 Page buffer and verify method of flash memory device using the same
02/20/2007US7180783 Non-volatile memory devices that include a programming verification function
02/20/2007US7180782 Read source line compensation in a non-volatile memory
02/20/2007US7180781 Memory block erasing in a flash memory device
02/20/2007US7180778 Semiconductor storage device having page copying function
02/20/2007US7180777 System and method for destructive purge of memory device
02/20/2007US7180774 Semiconductor integrated circuit device including first, second and third gates
02/20/2007US7180771 Device and method for pulse width control in a phase change memory device
02/20/2007US7180767 Multi-level memory device and methods for programming and reading the same
02/20/2007US7180362 Semiconductor device with pump circuit
02/20/2007US7180128 Non-volatile memory, non-volatile memory array and manufacturing method thereof
02/20/2007US7180124 Nonvolatile memory cells having split gate structure and methods of fabricating the same
02/20/2007US7179711 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
02/15/2007WO2007019168A2 Variable source resistor for flash memory
02/15/2007WO2007018985A2 Method of sensing an eeprom reference cell
02/15/2007WO2007018913A2 Reduction of programming time in electrically programmable devices
02/15/2007WO2007018912A2 Channel discharging after erasing flash memory devices
02/15/2007WO2007018084A1 Write protection method of sequential access semiconductor storage device
02/15/2007WO2007017926A1 Semiconductor device and control method thereof
02/15/2007US20070038901 Nonvolatile memory system
02/15/2007US20070038852 Configuration of a multilevel flash memory device
02/15/2007US20070038828 Chip protection register lock circuit in a flash memory device
02/15/2007US20070036002 Programming flash memories
02/15/2007US20070036001 Floating-gate nonvolatile semiconductor memory device
02/15/2007US20070036000 Semiconductor integrated circuit device
02/15/2007US20070035998 Nonvolatile memory apparatus
02/15/2007US20070035997 Semiconductor memory device which prevents destruction of data
02/15/2007US20070035996 Nonvolatile semiconductor memory device and method of operating the same
02/15/2007US20070035995 Method of programming a four-level flash memory device and a related page buffer
02/15/2007US20070035994 Method and apparatus for programming multi level cell flash memory device
02/15/2007US20070035993 Semiconductor device and method of generating a reference voltage therefor
02/15/2007US20070035992 Non-volatile semiconductor memory and method for reading a memory cell
02/15/2007US20070035991 Read mode for flash memory
02/15/2007US20070035583 Nozzle arrangement incorporating a lever based ink displacement mechanism
02/15/2007US20070034935 Nonvolatile semiconductor memory device and a method of the same
02/15/2007US20070034934 Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same
02/15/2007DE102006028967A1 Verfahren zum Programmieren eines nichtflüchtigen Halbleiterspeicherbauelements und Verfahren zum Lesen von programmierten Speicherzellen A method for programming a nonvolatile semiconductor memory device and method for reading the programmed memory cells
02/15/2007DE102006008872A1 Nichtflüchtiges Halbleiterspeicherbauelement, Programmierverfahren und Leseverfahren A non-volatile semiconductor memory device programming method and reading method
02/15/2007CA2616359A1 Write protection method of sequential access semiconductor storage device
02/14/2007EP1752989A1 NAND flash memory with erase verify based on shorter delay before sensing
02/14/2007EP1751773A1 Erase verification for non-volatile memory by testing the conduction of the memory elements in a first and a second direction
02/14/2007EP1751772A2 Configurable ready/busy control
02/14/2007EP1751771A1 Bitune governed approach for program control of non-volatile memory
02/14/2007EP1751770A1 Boosting to control programming of non-volatile memory
02/14/2007EP1751767A1 Thin film memory device having a variable resistance
02/14/2007EP1751763A2 Systems and methods for write protection of non-volatile memory devices
02/14/2007EP1634296A4 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
02/14/2007EP0974229B8 Broadcast and reception system, and conditional access system therefor
02/14/2007CN1914739A NOR-type channel-program channel-erase contactless flash memory on soi
02/14/2007CN1914689A Non-volatile memory and method with control data management
02/14/2007CN1913040A Method for configuring parameter in NOR FLASH
02/14/2007CN1913039A Story device, non-volatile memory device and micro-processing system
02/14/2007CN1913037A 数据记录装置 Data recording means
02/14/2007CN1300852C Non-volatile semi-conductor storage
02/14/2007CN1300803C Method for driving remapping in flash memory and its flash memory system structure
02/14/2007CN1300802C Semiconductor storing device
02/14/2007CN1300706C Memory system and integrate circuit with sector guide finger memory, and operating method thereof
02/13/2007US7178067 Secure EEPROM memory comprising an error correction circuit
02/13/2007US7178039 Method and arrangement for the verification of NV fuses as well as a corresponding computer program product and a corresponding computer-readable storage medium
02/13/2007US7177977 Operating non-volatile memory without read disturb limitations
02/13/2007US7177976 Top/bottom symmetrical protection scheme for flash
02/13/2007US7177975 Card system with erase tagging hierarchy and group based write protection