Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2007
01/04/2007US20070002624 Flash memory device for reducing error occurrence ratio in program operation and method of controlling program operation thereof
01/04/2007US20070002623 Page buffer circuit with reduced size, and flash memory device having page buffer and program operation method thereof
01/04/2007US20070002622 Nonvolatile semiconductor memory device including memory cell units each having a given number of memory cell transistors
01/04/2007US20070002621 Non-volatile memory device, and multi-page program, read and copyback program method thereof
01/04/2007US20070002620 Memory device and method for erasing memory
01/04/2007US20070002615 Flash memory device having single page buffer structure and related programming operations
01/04/2007US20070002614 Method of controlling program operation of flash memory device with reduced program time
01/04/2007US20070002613 Memory array with pseudo single bit memory cell and method
01/04/2007US20070002612 Method and system for managing partitions in a storage device
01/04/2007DE102005037287B3 Nicht-flüchtiger Halbleiterspeicher und Verfahren zum Bestimmen einer Lesespannung zum Auslesen von Daten aus derartigen Speichern A non-volatile semiconductor memory, and method for determining a read voltage for reading data from such memories
01/04/2007DE102005037037A1 Speicheranordnung und Verfahren zum Betreiben der Speicheranordnung Memory device and method of operating the memory array
01/04/2007DE102005031892A1 Verfahren zum Programmieren von Multi-Bit-Charge-Trapping-Speicherzellenanordnungen A method of programming multi-bit charge trapping memory cell arrays
01/04/2007CA2612194A1 Image sensor architecture employing one or more floating gate devices
01/03/2007EP1739683A1 Space management for managing high capacity nonvolatile memory
01/03/2007EP1739565A1 Storage system using flash memory
01/03/2007EP1738374A1 Variable programming of non-volatile memory
01/03/2007CN1890755A A memory device, an information storage process, a process, and a structured material
01/03/2007CN1890752A AC sensing for a resistive memory
01/03/2007CN1889189A Partition-supporting flash storing memory device
01/03/2007CN1293645C Semiconductor device
01/03/2007CN1293460C Controller and method for writing data
01/02/2007US7159158 System and method for reading data stored in a semiconductor device having multilevel memory cells
01/02/2007US7159124 Non-volatile semiconductor memory that prevents unauthorized reading
01/02/2007US7159068 Method of optimizing performance of a flash memory
01/02/2007US7158419 Methods of fabricating flash memory devices including multiple dummy cell array regions
01/02/2007US7158418 Non-volatile memory device capable of changing increment of program voltage to mode of operation
01/02/2007US7158417 Semiconductor device and method for writing data into the semiconductor device
01/02/2007US7158415 System for performing fast testing during flash reference cell setting
01/02/2007US7158414 Reference sensing circuit
01/02/2007US7158413 Semiconductor memory device with MOS transistors, each including a floating gate and a control gate, a control method thereof, and a memory card including the same
01/02/2007US7158412 On-chip EE-PROM programming waveform generation
01/02/2007US7158411 Integrated code and data flash memory
01/02/2007US7158409 Segmented metal bitlines
01/02/2007US7158408 Current source control in RFID memory
01/02/2007US7158398 Semiconductor memory device having row decoder in which high-voltage-applied portion is located adjacent to low-voltage-applied portion
01/02/2007US7157957 High voltage switch circuit for semiconductor device
01/02/2007US7157773 Nonvolatile semiconductor memory device
01/02/2007US7157767 Semiconductor memory element, semiconductor memory arrangement, method for fabricating a semiconductor memory element and method for operating a semiconductor memory element
01/02/2007US7157305 Forming multi-layer memory arrays
12/2006
12/28/2006WO2006138742A1 Architecture for virtual ground memory arrays
12/28/2006WO2006138413A1 Selective slow programming convergence in a flash memory device
12/28/2006WO2006138370A2 Memory using hole trapping in high-k dielectrics
12/28/2006WO2006138333A1 Program method for flash memory with optimized voltage level dependent of the number of bits detected to have failed programming
12/28/2006WO2006124122A3 Erasing non-volatile memory utilizing changing word line conditions to compensate for slower frasing memory cells
12/28/2006WO2005104133A3 High density data storage
12/28/2006US20060291292 Non-volatile semiconductor memory and programming method
12/28/2006US20060291288 Flash memory device and read method
12/28/2006US20060291286 Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
12/28/2006US20060291285 System and method for programming cells in non-volatile integrated memory devices
12/28/2006US20060291284 Apparatus and method for driving liquid crystal display device
12/28/2006DE112004000268T5 Auswahlschaltung für genaue Speicherleseoperationen Selection circuit for accurate memory read operations
12/28/2006DE102006030765A1 Halbleiterspeicherbauelement, Programmier- und Leseverfahren A semiconductor memory device, program and read method
12/28/2006DE102006030758A1 Nonvolatile memory device for e.g. flash memory device supports programming and verifies operations that improve threshold voltage distribution within programmed memory
12/28/2006DE102006030749A1 Phase change random access memory device, has word line driver including precharge device and discharge device, where precharge device and discharge device are alternately located between set of memory cell blocks
12/27/2006EP1737033A1 Nonvolatile semiconductor storage element having high charge holding characteristics and method for fabricating the same
12/27/2006EP1736994A1 Stacked memories with improved addressing means for microprocessor
12/27/2006EP1735967A2 States encoding in multi-bit flash cells
12/27/2006EP1310963B1 Semiconductor memory device
12/27/2006EP1147521B1 Flash memory array with internal refresh
12/27/2006EP1114461B1 Semiconductor circuit
12/27/2006CN1886803A 闪存装置 Flash memory device
12/27/2006CN1886798A Memory cell array with staggered local inter-connect structure
12/27/2006CN1885548A 非易失性半导体存储装置 Nonvolatile semiconductor memory device
12/27/2006CN1885436A Multiple level memory cell programming method
12/27/2006CN1885435A EEPROM level transforming circuit and method employing deep sub-micron CMOS standard process to realize
12/27/2006CN1885434A Block word line precharge circuit of flash memory device
12/27/2006CN1885433A ROM storage unit circuit with energy recovery structure
12/27/2006CN1885432A Phase change random access memory (pram) device
12/27/2006CN1885431A Semiconductor memory device and control method for the semiconductor memory device
12/27/2006CN1885429A Method for adjusting programmable resistance to preset resistance value
12/27/2006CN1292480C Nonvolatile semiconductor storage device, its mfg. method and semiconductor integrated circuit and system
12/27/2006CN1292356C Nonvolatile semiconductor memory device and its secret protection method
12/26/2006US7155562 Method for reading while writing to a single partition flash memory
12/26/2006US7155559 Flash memory architecture with separate storage of overhead and user data
12/26/2006US7155013 Recording apparatus, recording method, reproducing apparatus, and reproducing method
12/26/2006US7154805 Storage device employing a flash memory
12/26/2006US7154800 No-precharge FAMOS cell and latch circuit in a memory device
12/26/2006US7154789 High-voltage generator circuit and semiconductor memory device including the same
12/26/2006US7154787 Semiconductor memory and control method thereof allowing high degree of accuracy in verify operation
12/26/2006US7154786 Semiconductor integrated circuit device
12/26/2006US7154785 Charge pump circuitry having adjustable current outputs
12/26/2006US7154783 Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
12/26/2006US7154779 Non-volatile memory cell using high-k material inter-gate programming
12/26/2006US7154778 Nanocrystal write once read only memory for archival storage
12/26/2006US7154765 Flat-cell read-only memory
12/26/2006US7154141 Source side programming
12/26/2006US7154140 Write once read only memory with large work function floating gates
12/26/2006US7154138 Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangement
12/21/2006WO2006135658A2 System and method for matching resistance in a non-volatile memory
12/21/2006WO2005109438A3 Non-volatile memory dynamic operations
12/21/2006US20060288126 Using a processor to program a semiconductor memory
12/21/2006US20060285398 Semiconductor device
12/21/2006US20060285397 Storage device
12/21/2006US20060285396 Program method with optimized voltage level for flash memory
12/21/2006US20060285395 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
12/21/2006US20060285394 Method of programming a non-volatile memory cell by controlling the channel current during the rise period
12/21/2006US20060285393 Apparatus and method for programming a memory array
12/21/2006US20060285388 Circuit and method of generating high voltage for programming operation of flash memory device
12/21/2006US20060285387 Flash memory device with NAND architecture with reduced capacitive coupling effect
12/21/2006US20060285386 Accessing an NROM array