Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2007
03/06/2007US7187593 Control system; control apparatus; storage device and computer program product
03/06/2007US7187592 Multi-state memory
03/06/2007US7187591 Memory device and method for erasing memory
03/06/2007US7187590 Method and system for self-convergent erase in charge trapping memory cells
03/06/2007US7187589 Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory
03/06/2007US7187588 Semiconductor storage
03/06/2007US7187587 Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
03/06/2007US7187586 Flash memory erase verification systems and methods
03/06/2007US7187584 Method of reading multi-level NAND flash memory cell and circuit for the same
03/06/2007US7187583 Method for reducing data error when flash memory storage device using copy back command
03/06/2007US7187582 Erroneous operation preventing circuit of non-volatile memory device
03/06/2007US7187030 SONOS memory device
03/06/2007US7187029 Nonvolatile semiconductor memory device with floating gate and two control gates
03/01/2007WO2007024565A2 Nonvolatile memory cell programming
03/01/2007WO2007023545A1 Memory device having redundancy repairing function
03/01/2007WO2007023544A1 Memory device, control method of memory device, and control method of memory control apparatus
03/01/2007WO2006102292A3 Nanogaps: methods and devices containing same
03/01/2007US20070050651 Data controlled programming pump
03/01/2007US20070047360 Semiconductor storage device having page copying function
03/01/2007US20070047329 Configurable flash memory
03/01/2007US20070047328 Flash memory device with multiple erase voltage levels
03/01/2007US20070047327 Erase method for flash memory
03/01/2007US20070047326 Programming memory devices
03/01/2007US20070047325 Method and apparatus for discharging a memory cell in a memory device after an erase operation
03/01/2007US20070047320 Nor flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith
03/01/2007US20070047318 Nonvolatile semiconductor memory device and programming or erasing method therefor
03/01/2007US20070047317 Nonvolatile semiconductor memory devices
03/01/2007US20070047316 Reading method of a nand-type memory device and nand-type memory device
03/01/2007US20070047315 Program and read trim setting
03/01/2007US20070047314 Programming method for NAND EEPROM
03/01/2007US20070047313 Non-volatile semiconductor memory device
03/01/2007US20070047312 Operation of multiple select gate architecture
03/01/2007US20070047311 Selective threshold voltage verification and compaction
03/01/2007US20070047310 NAND memory device and programming methods
03/01/2007US20070047309 Twin MONOS array for high speed application
03/01/2007US20070047308 Memory controller, flash memory system and control method for flash memory
03/01/2007US20070047307 High speed operation method for twin MONOS metal bit array
03/01/2007US20070047306 Non-volatile memory copy back
03/01/2007US20070047303 Electrically erasable programmable read-only memory cell transistor and related method
03/01/2007US20070047302 Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
03/01/2007US20070047301 Multiple select gate architecture
03/01/2007US20070047300 Flash memory device with improved read speed
03/01/2007US20070047299 Method for accessing a multilevel nonvolatile memory device of the flash nand type
03/01/2007US20070047298 Method and apparatus for reducing operation disturbance
03/01/2007DE102005038939A1 Halbleiterspeicherbauelement und Herstellungsverfahren The semiconductor memory device and manufacturing method
02/2007
02/28/2007EP1758167A2 Phase change memory array having equalized resistance
02/28/2007EP1758128A1 Reprogrammable switch using phase change material
02/28/2007EP1758127A1 Reprogrammable switch using phase change material
02/28/2007EP1758027A2 Non-volatile memory and method with control data management
02/28/2007EP1756832A1 Pipelined data relocation and improved chip architectures
02/28/2007EP1756808A2 Methods for writing and reading highly resolved domains for high density data storage
02/28/2007EP1721321A4 Non-volatile memory array with simultaneous write and erase feature
02/28/2007CN1922616A Storage device and data processing device
02/28/2007CN1922586A Non-volatile memory and method with memory planes alignment
02/28/2007CN1922585A Non-volatile memory and method with non-sequential update block management
02/28/2007CN1922580A Non-volatile memory and method with phased program failure handling
02/28/2007CN1921015A Method for reading non-volatile memory cells
02/28/2007CN1921014A Structures and methods for enhancing erase uniformity in an nrom array
02/28/2007CN1921013A 相位变化随机访问存储装置 Phase change random access memory means
02/28/2007CN1921012A Circuit for generating step-up voltage in non-volatile memory device
02/28/2007CN1921011A Non-volatile storage and its related limit voltage verification method and semiconductor device
02/28/2007CN1302552C Semiconductor memory and producing method thereof
02/27/2007US7185245 Test reading apparatus for memories
02/27/2007US7185244 Semiconductor integrated circuit and electronic system
02/27/2007US7184545 Semiconductor integrated circuit and method of testing semiconductor integrated circuit
02/27/2007US7184356 Semiconductor memory device
02/27/2007US7184348 Sensing circuit for a semiconductor memory
02/27/2007US7184345 High speed and high precision sensing for digital multilevel non-volatile memory system
02/27/2007US7184343 Nonvolatile semiconductor memory device providing stable data reading
02/27/2007US7184334 Semiconductor memory device and method of testing semiconductor memory device
02/27/2007US7184321 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
02/27/2007US7184320 Storage device employing a flash memory
02/27/2007US7184319 Method for erasing non-volatile memory cells and corresponding memory device
02/27/2007US7184318 Semiconductor memory device
02/27/2007US7184316 Non-volatile memory cell array having common drain lines and method of operating the same
02/27/2007US7184315 NROM flash memory with self-aligned structural charge separation
02/27/2007US7184314 Semiconductor memory device
02/27/2007US7184313 Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
02/27/2007US7184312 One transistor SOI non-volatile random access memory cell
02/27/2007US7184311 Method and system for regulating a program voltage value during multilevel memory device programming
02/27/2007US7184310 Sequential program-verify method with result buffering
02/27/2007US7184309 Non-volatile semiconductor memory device
02/27/2007US7184308 Flash memory devices and methods for programming the same
02/27/2007US7184307 Flash memory device capable of preventing program disturbance according to partial programming
02/27/2007US7184306 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
02/27/2007US7184305 Nonvolatile semiconductor storage device and row-line short defect detection method
02/27/2007US7184304 Nonvolatile semiconductor memory device and method for fabricating the same
02/27/2007US7184296 Memory device
02/27/2007US7184295 Memory device
02/27/2007US7183615 Nonvolatile semiconductor memory and manufacturing method for the same
02/27/2007US7183163 Method of manufacturing an isolation-less, contact-less array of bi-directional read/program non-volatile floating gate memory cells with independent controllable control gates
02/27/2007US7183154 Nonvolatile memory cells having split gate structure and methods of fabricating the same
02/22/2007WO2005104133B1 High density data storage
02/22/2007US20070041249 Method of erasing non-volatile memory cells
02/22/2007US20070041247 Flash memory device having single page buffer structure
02/22/2007US20070041245 Set programming methods and write driver circuits for a phase-change memory array
02/22/2007US20070041244 Circuit for inhibition of program disturbance in memory devices
02/22/2007US20070040595 Semiconductor integrated circuit
02/22/2007US20070040208 Fabrication method and structure of semiconductor non-volatile memory device
02/22/2007DE112004002832T5 Sektorschutzschaltung für einen nichtflüchtigen Halbleiterspeicher, Sektorschutzverfahren und nichtflüchtiger Halbleiterspeicher Sector protection circuit for a nonvolatile semiconductor memory sector protection method and a non-volatile semiconductor memory