Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
---|
03/06/2007 | US7187593 Control system; control apparatus; storage device and computer program product |
03/06/2007 | US7187592 Multi-state memory |
03/06/2007 | US7187591 Memory device and method for erasing memory |
03/06/2007 | US7187590 Method and system for self-convergent erase in charge trapping memory cells |
03/06/2007 | US7187589 Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory |
03/06/2007 | US7187588 Semiconductor storage |
03/06/2007 | US7187587 Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
03/06/2007 | US7187586 Flash memory erase verification systems and methods |
03/06/2007 | US7187584 Method of reading multi-level NAND flash memory cell and circuit for the same |
03/06/2007 | US7187583 Method for reducing data error when flash memory storage device using copy back command |
03/06/2007 | US7187582 Erroneous operation preventing circuit of non-volatile memory device |
03/06/2007 | US7187030 SONOS memory device |
03/06/2007 | US7187029 Nonvolatile semiconductor memory device with floating gate and two control gates |
03/01/2007 | WO2007024565A2 Nonvolatile memory cell programming |
03/01/2007 | WO2007023545A1 Memory device having redundancy repairing function |
03/01/2007 | WO2007023544A1 Memory device, control method of memory device, and control method of memory control apparatus |
03/01/2007 | WO2006102292A3 Nanogaps: methods and devices containing same |
03/01/2007 | US20070050651 Data controlled programming pump |
03/01/2007 | US20070047360 Semiconductor storage device having page copying function |
03/01/2007 | US20070047329 Configurable flash memory |
03/01/2007 | US20070047328 Flash memory device with multiple erase voltage levels |
03/01/2007 | US20070047327 Erase method for flash memory |
03/01/2007 | US20070047326 Programming memory devices |
03/01/2007 | US20070047325 Method and apparatus for discharging a memory cell in a memory device after an erase operation |
03/01/2007 | US20070047320 Nor flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith |
03/01/2007 | US20070047318 Nonvolatile semiconductor memory device and programming or erasing method therefor |
03/01/2007 | US20070047317 Nonvolatile semiconductor memory devices |
03/01/2007 | US20070047316 Reading method of a nand-type memory device and nand-type memory device |
03/01/2007 | US20070047315 Program and read trim setting |
03/01/2007 | US20070047314 Programming method for NAND EEPROM |
03/01/2007 | US20070047313 Non-volatile semiconductor memory device |
03/01/2007 | US20070047312 Operation of multiple select gate architecture |
03/01/2007 | US20070047311 Selective threshold voltage verification and compaction |
03/01/2007 | US20070047310 NAND memory device and programming methods |
03/01/2007 | US20070047309 Twin MONOS array for high speed application |
03/01/2007 | US20070047308 Memory controller, flash memory system and control method for flash memory |
03/01/2007 | US20070047307 High speed operation method for twin MONOS metal bit array |
03/01/2007 | US20070047306 Non-volatile memory copy back |
03/01/2007 | US20070047303 Electrically erasable programmable read-only memory cell transistor and related method |
03/01/2007 | US20070047302 Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
03/01/2007 | US20070047301 Multiple select gate architecture |
03/01/2007 | US20070047300 Flash memory device with improved read speed |
03/01/2007 | US20070047299 Method for accessing a multilevel nonvolatile memory device of the flash nand type |
03/01/2007 | US20070047298 Method and apparatus for reducing operation disturbance |
03/01/2007 | DE102005038939A1 Halbleiterspeicherbauelement und Herstellungsverfahren The semiconductor memory device and manufacturing method |
02/28/2007 | EP1758167A2 Phase change memory array having equalized resistance |
02/28/2007 | EP1758128A1 Reprogrammable switch using phase change material |
02/28/2007 | EP1758127A1 Reprogrammable switch using phase change material |
02/28/2007 | EP1758027A2 Non-volatile memory and method with control data management |
02/28/2007 | EP1756832A1 Pipelined data relocation and improved chip architectures |
02/28/2007 | EP1756808A2 Methods for writing and reading highly resolved domains for high density data storage |
02/28/2007 | EP1721321A4 Non-volatile memory array with simultaneous write and erase feature |
02/28/2007 | CN1922616A Storage device and data processing device |
02/28/2007 | CN1922586A Non-volatile memory and method with memory planes alignment |
02/28/2007 | CN1922585A Non-volatile memory and method with non-sequential update block management |
02/28/2007 | CN1922580A Non-volatile memory and method with phased program failure handling |
02/28/2007 | CN1921015A Method for reading non-volatile memory cells |
02/28/2007 | CN1921014A Structures and methods for enhancing erase uniformity in an nrom array |
02/28/2007 | CN1921013A 相位变化随机访问存储装置 Phase change random access memory means |
02/28/2007 | CN1921012A Circuit for generating step-up voltage in non-volatile memory device |
02/28/2007 | CN1921011A Non-volatile storage and its related limit voltage verification method and semiconductor device |
02/28/2007 | CN1302552C Semiconductor memory and producing method thereof |
02/27/2007 | US7185245 Test reading apparatus for memories |
02/27/2007 | US7185244 Semiconductor integrated circuit and electronic system |
02/27/2007 | US7184545 Semiconductor integrated circuit and method of testing semiconductor integrated circuit |
02/27/2007 | US7184356 Semiconductor memory device |
02/27/2007 | US7184348 Sensing circuit for a semiconductor memory |
02/27/2007 | US7184345 High speed and high precision sensing for digital multilevel non-volatile memory system |
02/27/2007 | US7184343 Nonvolatile semiconductor memory device providing stable data reading |
02/27/2007 | US7184334 Semiconductor memory device and method of testing semiconductor memory device |
02/27/2007 | US7184321 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein |
02/27/2007 | US7184320 Storage device employing a flash memory |
02/27/2007 | US7184319 Method for erasing non-volatile memory cells and corresponding memory device |
02/27/2007 | US7184318 Semiconductor memory device |
02/27/2007 | US7184316 Non-volatile memory cell array having common drain lines and method of operating the same |
02/27/2007 | US7184315 NROM flash memory with self-aligned structural charge separation |
02/27/2007 | US7184314 Semiconductor memory device |
02/27/2007 | US7184313 Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells |
02/27/2007 | US7184312 One transistor SOI non-volatile random access memory cell |
02/27/2007 | US7184311 Method and system for regulating a program voltage value during multilevel memory device programming |
02/27/2007 | US7184310 Sequential program-verify method with result buffering |
02/27/2007 | US7184309 Non-volatile semiconductor memory device |
02/27/2007 | US7184308 Flash memory devices and methods for programming the same |
02/27/2007 | US7184307 Flash memory device capable of preventing program disturbance according to partial programming |
02/27/2007 | US7184306 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
02/27/2007 | US7184305 Nonvolatile semiconductor storage device and row-line short defect detection method |
02/27/2007 | US7184304 Nonvolatile semiconductor memory device and method for fabricating the same |
02/27/2007 | US7184296 Memory device |
02/27/2007 | US7184295 Memory device |
02/27/2007 | US7183615 Nonvolatile semiconductor memory and manufacturing method for the same |
02/27/2007 | US7183163 Method of manufacturing an isolation-less, contact-less array of bi-directional read/program non-volatile floating gate memory cells with independent controllable control gates |
02/27/2007 | US7183154 Nonvolatile memory cells having split gate structure and methods of fabricating the same |
02/22/2007 | WO2005104133B1 High density data storage |
02/22/2007 | US20070041249 Method of erasing non-volatile memory cells |
02/22/2007 | US20070041247 Flash memory device having single page buffer structure |
02/22/2007 | US20070041245 Set programming methods and write driver circuits for a phase-change memory array |
02/22/2007 | US20070041244 Circuit for inhibition of program disturbance in memory devices |
02/22/2007 | US20070040595 Semiconductor integrated circuit |
02/22/2007 | US20070040208 Fabrication method and structure of semiconductor non-volatile memory device |
02/22/2007 | DE112004002832T5 Sektorschutzschaltung für einen nichtflüchtigen Halbleiterspeicher, Sektorschutzverfahren und nichtflüchtiger Halbleiterspeicher Sector protection circuit for a nonvolatile semiconductor memory sector protection method and a non-volatile semiconductor memory |