Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/2006
07/18/2006US7080193 Flash memory with accessible page during write
07/18/2006US7080192 File storage and erasure in flash memory
07/18/2006US7079448 Word-programmable flash memory
07/18/2006US7079445 Flash memory pipelined burst read operation circuit, method, and system
07/18/2006US7079437 Nonvolatile semiconductor memory device having configuration of NAND strings with dummy memory cells adjacent to select transistors
07/18/2006US7079429 Semiconductor memory device
07/18/2006US7079423 Method for programming dual bit memory devices to reduce complementary bit disturbance
07/18/2006US7079422 Periodic refresh operations for non-volatile multiple-bit-per-cell memory
07/18/2006US7079421 Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
07/18/2006US7079420 Method for operating a memory device
07/18/2006US7079419 NAND flash memory with read and verification for threshold uniformity
07/18/2006US7079418 Semiconductor storage apparatus and microcomputer having the same
07/18/2006US7079417 Read-while-write flash memory devices having local row decoder circuits activated by separate read and write signals
07/18/2006US7078770 Fully depleted silicon-on-insulator CMOS logic
07/18/2006US7078763 Nonvolatile semiconductor memory device including improved gate electrode
07/18/2006US7078762 Semiconductor memory device and method for producing the same
07/18/2006US7078761 Nonvolatile memory solution using single-poly pFlash technology
07/13/2006WO2006073308A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device
07/13/2006WO2006036453A3 Non-volatile nand memory with asymmetrical doping profile
07/13/2006US20060156297 Method and device for modifying software in a control unit and corresponding control unit
07/13/2006US20060156078 Method for restoring administrative data records of a memory that can be erased in blocks
07/13/2006US20060155947 Selectable block protection for non-volatile memory
07/13/2006US20060155923 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
07/13/2006US20060154467 Method for the production of a memory cell, memory cell and memory cell arrangement
07/13/2006US20060153025 Recording medium recording control method and recording control device
07/13/2006US20060152978 Multi-state NROM device
07/13/2006US20060152977 Nonvolatile memory device and method of programming/reading the same
07/13/2006US20060152976 Nonvolatile memory device with load-free wired-or structure and an associated driving method
07/13/2006US20060152975 Multiple use memory chip
07/13/2006US20060152974 Multi-level ONO flash program algorithm for threshold width control
07/13/2006US20060152274 Voltage generating/transferring circuit
07/13/2006US20060152208 Time limit function utilization apparatus
07/13/2006DE102005063049A1 NAND-Flashspeicherbauelement und Programmierverfahren NAND flash memory device and programming process
07/13/2006DE102005025167B3 Multi-bit virtual ground NAND-memory unit, has memory cells of two adjacent groups of rows connected in common
07/13/2006DE102005017533A1 Nonvolatile ferroelectric memory device e.g. ferroelectric random access memory device, has ferroelectric layer formed on floating channel layer and word line formed on ferroelectric layer
07/13/2006DE102005017072A1 Charge trap insulator memory device, has float channel, where data are read based on different channel resistance induced to channel depending on polarity states of charges stored in insulator
07/13/2006DE102005017071A1 Float gate memory device, has bottom word line, where bottom word line and top word line are at ground voltage state in read mode, and float gate cell arrays deposited vertically with cell insulating layers
07/13/2006DE102005016937A1 Speichervorrichtung mit Ladungsfallenisolator Storage device with charge trapping insulator
07/13/2006DE102004063641A1 Method for restoring or programming operations of non-volatile memory unit entails feeding data read out from memory cells to page memory, and modifying content of page memory in sole dependence of this data and control signals
07/13/2006DE102004062245A1 Verwaltung von Datenobjekten in einem nichtflüchtigen überschreibbaren Speicher Managing data objects in a rewritable non-volatile memory
07/12/2006EP1679894A2 Broadcast and reception system, and conditional access system therefor
07/12/2006EP1679721A2 Method for operating a NROM memory device
07/12/2006EP1679599A1 File update system and boot management system of mobile communication terminal, and corresponding methods
07/12/2006EP1678722A1 Programming method based on the behavior of non-volatile memory cells
07/12/2006EP1678721A1 Memory assembly and method for operating the same
07/12/2006CN2795978Y Infrared controller capable of realizing far remote control of house appliance
07/12/2006CN1801397A 半导体存储器件 A semiconductor memory device
07/12/2006CN1801393A Time limit function utilization apparatus
07/12/2006CN1801388A 半导体存储装置 The semiconductor memory device
07/12/2006CN1801116A Data recording apparatus, initialization method of recording medium, and storage medium
07/12/2006CN1801115A Storage system and method keeping away from NAND gate flash memory bad block
07/12/2006CN1801088A Apparatus having burning in system function and system thereof
07/12/2006CN1264169C Method for reducing capacitive loading in flash memory X-decoder for accurate voltage control at wordlines and select lines
07/12/2006CN1264168C Apparatus and method for processing data
07/11/2006US7076722 Semiconductor memory device
07/11/2006US7075844 Parallel sense amplifier with mirroring of the current to be measured into each reference branch
07/11/2006US7075841 Writing circuit for a phase change memory device
07/11/2006US7075839 Semiconductor memory device
07/11/2006US7075832 Method for erasing an NROM cell
07/11/2006US7075831 Method for erasing an NROM cell
07/11/2006US7075830 Method for programming single-bit storage SONOS type memory
07/11/2006US7075829 Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
07/11/2006US7075828 Operation scheme with charge balancing erase for charge trapping non-volatile memory
07/11/2006US7075827 Function reconfigurable semiconductor device and integrated circuit configuring the semiconductor device
07/11/2006US7075826 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
07/11/2006US7075824 NAND flash memory device
07/11/2006US7075823 Flash memory cell arrays having dual control gates per memory cell charge storage element
07/11/2006US7075822 High bandwidth datapath load and test of multi-level memory cells
07/11/2006US7075813 Storage device using resistance varying storage element and reference resistance value decision method for the device
07/11/2006US7075675 Memory management apparatus and communication apparatus
07/11/2006US7075284 Time limit function utilization
07/11/2006US7075144 Non-volatile memory device
07/11/2006US7075143 Apparatus and method for high sensitivity read operation
07/11/2006US7075141 Four terminal non-volatile transistor device
07/11/2006US7075140 Low voltage EEPROM memory arrays
07/11/2006US7075127 Single-poly 2-transistor based fuse element
07/11/2006US7074673 Service programmable logic arrays with low tunnel barrier interpoly insulators
07/06/2006WO2006071686A2 Method and system for reducing soft-writing in a multi-level flash memory
07/06/2006WO2006071684A2 Sense amplifiers with high voltage swing
07/06/2006WO2006071683A1 Method of programming, reading and erasing memory-diode in a memory-diode array
07/06/2006WO2006071559A1 Word line compensation in non-volatile memory erase operations
07/06/2006WO2006071541A1 Nand-eeprom with reduction of floating gate to floating gate coupling effect
07/06/2006WO2006071453A2 Programming method for nanocrystal memory device
07/06/2006WO2006071282A1 Substrate electron injection techniques for programming non-volatile charge storage memory cells
07/06/2006WO2006070151A1 Pmc memory with improved retention time and writing speed
07/06/2006US20060149996 Techniques for storing accurate operating current values
07/06/2006US20060149896 Maintaining an average erase count in a non-volatile storage system
07/06/2006US20060146632 Flash memory device and method for fabricating the same, and programming and erasing method thereof
07/06/2006US20060146615 Method and apparatus for reducing read disturb in non-volatile memory
07/06/2006US20060146614 Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL)
07/06/2006US20060146613 Programming method for controlling memory threshold voltage distribution
07/06/2006US20060146612 Flash memory devices configured to output data without waiting for bitline and wordline recovery and methods of operating same
07/06/2006US20060146611 Flash memory device with improved programming performance
07/06/2006US20060146610 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
07/06/2006US20060146609 NAND flash memory device and method of programming same
07/06/2006US20060146608 Integrated circuit including memory array incorporating multiple types of NAND string structures
07/06/2006US20060146607 Non-volatile semiconductor memory device
07/06/2006US20060146606 Integrated DRAM-NVRAM multi-level memory
07/06/2006US20060146605 Integrated DRAM-NVRAM multi-level memory
07/06/2006US20060146604 Recording apparatus, recording method, recording medium and program