G11C 16 - Erasable programmable read-only memories

Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2006
11/09/2006	WO2006118601A1 Integrated circuit having a non-volatile memory with discharge rate control and method therefor
11/09/2006	WO2006019653A3 A novel nvram memory cell architecture that integrates conventional sram and flash cells
11/09/2006	US20060253641 Multiple erase block tagging in a flash memory device
11/09/2006	US20060252205 Nonvolatile Semiconductor Storage Device and Its Manufacturing Method
11/09/2006	US20060250885 Initial firing method and phase change memory device for performing firing effectively
11/09/2006	US20060250872 AC sensing for a resistive memory
11/09/2006	US20060250855 Erase and read schemes for charge trapping non-volatile memories
11/09/2006	US20060250853 Method and apparatus for sensing flash memory using delta sigma modulation
11/09/2006	US20060250850 Flash Memory Device and Method of Programming the Same
11/09/2006	US20060250849 Semiconductor integrated circuit device
11/09/2006	US20060250848 Non-volatile semiconductor memory device
11/09/2006	US20060250847 Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor
11/09/2006	US20060250846 Non-volatile memory device having uniform programming speed
11/09/2006	US20060250845 Layout for NAND flash memory array having reduced word line impedance
11/09/2006	US20060250844 Systems-On-Chips Including Programmed Memory Cells and Programmable and Erasable Memory Cells
11/09/2006	US20060250841 Semiconductor memory device
11/09/2006	US20060250167 Voltage detection circuit, semiconductor device, method for controlling voltage detection circuit
11/09/2006	US20060249587 Portable data storage apparatus
11/09/2006	DE102005063166A1 Non-volatile memory e.g. NAND-type flash memory controls page buffer circuit including page buffers which are connected with data output lines
11/09/2006	DE102005028217B3 Writing method for data in nonvolatile semiconductor memory e.g. nitride programmable ROM, involves programming first bit or second bit if first bit or second bit is programmed in final state
11/09/2006	DE102005023057A1 Nichtflüchtiger Speicher Non-volatile memory
11/08/2006	EP1720172A1 Semiconductor storage device and redundancy control method for semiconductor storage device
11/08/2006	EP1720169A1 Non-volatile storage device comprising programming and erasing control
11/08/2006	EP1720168A1 Integrated circuit device, flash memory array, nonvolatile memory device and operating method
11/08/2006	EP1719136A1 Non-switching pre-and post-disturb compensational pulses
11/08/2006	CN1858910A Anti-fuse once-programmable nonvolatile memory unit and method for manufacture and programming thereof
11/08/2006	CN1858857A Non-volatile memory device having uniform programming speed
11/08/2006	CN1858706A Method and system for 51 one-chip computer on-system upgrading
11/07/2006	US7133961 Non-volatile memory card and transfer interruption means
11/07/2006	US7133323 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
11/07/2006	US7133317 Method and apparatus for programming nonvolatile memory
11/07/2006	US7133316 Program/erase method for P-channel charge trapping memory device
11/07/2006	US7133315 Write once read only memory employing charge trapping in insulators
11/07/2006	US7133314 Non-volatile semiconductor memory device with reduced chip real estate area for transfer transistors
11/07/2006	US7133313 Operation scheme with charge balancing for charge trapping non-volatile memory
11/07/2006	US7133312 Readout circuit for semiconductor memory device based on a number of pulses generated by a voltage-controlled oscillator
11/07/2006	US7132923 Memory rewriting system for vehicle controller
11/07/2006	US7132875 Voltage switching circuit
11/07/2006	US7132718 Fabrication method and structure of semiconductor non-volatile memory device
11/07/2006	US7132711 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
11/07/2006	US7132335 Semiconductor device with localized charge storage dielectric and method of making same
11/07/2006	US7132332 Semiconductor memory device and manufacturing method thereof
11/02/2006	WO2006114904A1 Non volatile memory cell and semiconductor memory device
11/02/2006	US20060248269 Data rewriting method for flash memory using partial erases
11/02/2006	US20060245280 Integrated circuit having a non-volatile memory cell transistor as a fuse device
11/02/2006	US20060245263 Nonvolatile semiconductor memory
11/02/2006	US20060245262 Memory structure and method of programming
11/02/2006	US20060245256 Split gate flash memory cell with ballistic injection
11/02/2006	US20060245255 High density stepped, non-planar flash memory
11/02/2006	US20060245254 Nonvolatile semiconductor memory device
11/02/2006	US20060245253 Nonvolatile semiconductor memory and method for controlling the same
11/02/2006	US20060245252 Flash memory programming to reduce program disturb
11/02/2006	US20060245251 Semiconductor memory device
11/02/2006	US20060245250 Semiconductor device and control method thereof
11/02/2006	US20060245249 Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
11/02/2006	US20060245248 Predictive methods and apparatus for non-volatile memory
11/02/2006	US20060245246 Inversion bit line, charge trapping non-volatile memory and method of operating same
11/02/2006	US20060245245 Non-volatile memory cell using high-k material and inter-gate programming
11/02/2006	US20060245234 Method of operating a complementary bit resistance memory sensor and method of operation
11/02/2006	US20060245227 Serial transistor-cell array architecture
11/02/2006	US20060244435 Time limit function utilization apparatus
11/02/2006	US20060244434 Time limit function utilization apparatus
11/02/2006	US20060244049 Semiconductor memory device, method for controlling the same, and mobile electronic device
11/02/2006	US20060244043 Nonvolatile memory solution using single-poly pFlash technology
11/02/2006	US20060244041 Programmable nonvolatile memory and semiconductor integrated circuit device
11/02/2006	US20060244039 Metal-poly integrated capacitor structure
11/02/2006	US20060244038 Split gate flash memory cell with ballistic injection
11/02/2006	EP1717818A1 Semiconductor storage device and redundancy method for semiconductor storage device
11/02/2006	EP1717817A1 A semiconductor memory device with information loss self-detect capability
11/02/2006	EP1717816A1 Current/voltage conversion circuit and its controlling method
11/02/2006	EP1717815A1 Inversion bit line, charge trapping non-volatile memory and method of operating same
11/02/2006	EP1717707A1 Moving sectors within a block in a flash memory
11/02/2006	EP1636801B1 Multibit memory with dynamic reference voltage generation
11/02/2006	EP1514171B1 Method for restoring administrative data records of a memory that can be erased in blocks
11/02/2006	DE102004046549B4 Schaltung zur Erzeugung einer hohen Spannung und nichtflüchtiges Halbleiterspeicherbauelement A circuit for generating a high voltage and a non-volatile semiconductor memory device
11/02/2006	DE10003812B4 Schaltung zum Ansteuern eines nichtflüchtigen ferroelektrischen Speichers Circuit for driving a non-volatile ferroelectric memory
11/01/2006	CN1856841A Nonvolatile semiconductor memory device having protection function for each memory block
11/01/2006	CN1856840A Erase inhibit in non-volatile memories
11/01/2006	CN1856839A Nonvolatile semiconductor memory device which uses some memory blocks in multilevel memory as binary memory blocks
11/01/2006	CN1856220A Method for mounting carrier belt and programmable read-only memory
11/01/2006	CN1855510A Integrated circuit memory and method of operating same
11/01/2006	CN1855509A Scrubbing and programmable electric read-only memory and its production
11/01/2006	CN1855503A Non-volatile memory component, its production and operation
11/01/2006	CN1855502A Non-volatile memory and its production
11/01/2006	CN1855310A Nonvolatile storage apparatus
11/01/2006	CN1855309A Program-verify method of non-volatile memory device
11/01/2006	CN1855308A Memory device having a virtual ground array and methods using program algorithm to improve read margin loss
11/01/2006	CN1855307A Multi-bit virtual-ground nand memory device
11/01/2006	CN1855306A Nonvolatile semiconductor memory and its control method
11/01/2006	CN1855304A Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
11/01/2006	CN1855303A Memory array circuit with two-bit memory cells
10/2006
10/31/2006	US7130240 Semiconductor memory system and method for multi-sector erase operation
10/31/2006	US7130239 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
10/31/2006	US7130233 Sensing circuit for single bit-line semiconductor memory device
10/31/2006	US7130224 Composite storage circuit and semiconductor device having the same composite storage circuit
10/31/2006	US7130223 Nonvolatile semiconductor memory device
10/31/2006	US7130220 Write once read only memory employing floating gates
10/31/2006	US7130219 Electrically word-erasable non-volatile memory device, and biasing method thereof
10/31/2006	US7130218 Nonvolatile memory with controlled voltage boosting speed
10/31/2006	US7130217 Semiconductor storage device having page copying function

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