Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2006
09/07/2006US20060198193 Reduction of adjacent floating gate data pattern sensitivity
09/07/2006US20060198192 Boosting to control programming of non-volatile memory
09/07/2006US20060198191 Semiconductor integrated circuit device
09/07/2006US20060198190 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
09/07/2006US20060198189 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
09/07/2006US20060198188 Method for operating page buffer of nonvolatile memory device
09/07/2006US20060198187 Memory device with a ramp-like voltage biasing structure based on a current generator
09/07/2006US20060197160 Nonvolatile semiconductor memory device
09/07/2006US20060197139 Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof
09/07/2006US20060197115 Phase change memory device
09/07/2006DE102006008530A1 Flash memory is connected directly to an expansion flash memory module directly using built in actuator facility
09/07/2006DE102005023911A1 Halbleiterschaltungsvorrichtung und Verfahren zum Betreiben der Halbleiterschaltvorrichtung A semiconductor circuit device and method of operating the semiconductor switching device
09/07/2006DE10002266B4 Nichtflüchtiges Halbleiterspeicherbauelement und Programmierverfahren hierfür A non-volatile semiconductor memory device and programming method therefor
09/06/2006EP1699055A1 A memory device with time-shifting based emulation of reference cells
09/06/2006EP1699054A1 A memory device with a ramp-like voltage biasing structure and reduced number of reference cells
09/06/2006EP1543523B1 Highly compact non-volatile memory with space-efficient data registers and method therefor
09/06/2006CN1828935A Semiconductor component and its manufacturing method and memory element and its operating method
09/06/2006CN1828764A Memory array with low power bit line precharge
09/06/2006CN1828763A Memory device capable of partition protecting data and its method
09/06/2006CN1828639A Memory card one-time wrapping method and its structure
09/06/2006CN1828473A USB interface memory card
09/06/2006CN1274152C Signal generation and broadcasting
09/06/2006CN1273992C Writable tracking cells
09/05/2006US7103706 System and method for multi-bit flash reads using dual dynamic references
09/05/2006US7102943 Non-volatile semiconductor memory device
09/05/2006US7102941 Semiconductor memory device and portable electronic apparatus
09/05/2006US7102931 Nonvolatile semiconductor memory apparatus and method of producing the same
09/05/2006US7102930 Method of programming a non-volatile memory cell to eliminate or to minimize program deceleration
09/05/2006US7102929 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
09/05/2006US7102928 Semiconductor memory apparatus
09/05/2006US7102927 Memory devices and programming methods that simultaneously store erase status indications for memory blocks
09/05/2006US7102926 Integrated circuit memory devices including programmed memory cells and programmable and erasable memory cells
09/05/2006US7102925 Flash memory device
09/05/2006US7102924 Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
09/05/2006US7102383 Method for programming/parallel programming of onboard flash memory by multiple access bus
09/05/2006US7101757 Nonvolatile memory cells with buried channel transistors
09/05/2006US7101728 Programmable structure including an oxide electrolyte and method of forming programmable structure
08/2006
08/31/2006WO2006091480A1 Snse-based limited reprogrammable cell
08/31/2006WO2006090443A1 Method for setting redundancy of storage device, and storage device
08/31/2006WO2006090442A1 Semiconductor device and method for controlling the same
08/31/2006WO2006090440A1 Storage device testing method and storage device
08/31/2006US20060195766 Semiconductor memory device
08/31/2006US20060195651 Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
08/31/2006US20060193180 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
08/31/2006US20060193179 Method and apparatus for determining the geometric correspondence between multiple 3D rangefinder data sets
08/31/2006US20060193178 Non-volatile memory device with erase address register
08/31/2006US20060193177 Position based erase verification levels in a flash memory device
08/31/2006US20060193176 Multiple level programming in a non-volatile memory device
08/31/2006US20060193175 Nonvolatile memory device and method of manufacturing the same
08/31/2006US20060193173 Non-volatile semiconductor memory device and data programming method
08/31/2006US20060193172 High bandwidth datapath load and test of multi-level memory cells
08/31/2006US20060193171 Semiconductor memory devices having signal delay controller and methods performed therein
08/31/2006US20060193170 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
08/31/2006US20060193169 Multiple level programming in a non-volatile memory device
08/31/2006US20060193168 Integrated semiconductor memory and method for operating a semiconductor memory
08/31/2006US20060193167 Compact non-volatile memory array with reduced disturb
08/31/2006US20060193166 Semiconductor device and method of operating a semiconductor device
08/31/2006DE102005056493A1 Multi-bit non-volatile semiconductor memory e.g. NAND type flash memory, has page buffer circuit which selectively flips logic value of main latch data responsive to sub-latch data in programming mode
08/31/2006DE102005018789B3 Flash memory unit operating method, involves detecting number of single bit losses in deleting process and accepting process as completed if number of losses corresponds to criterion of error correcting code else process is further taken
08/31/2006DE102005012112A1 Ladungsgfangendes Speicherbauelement und Verfahren zur Herstellung Ladungsgfangendes memory device and methods for preparing
08/31/2006DE10034743B4 Flash-Speicherbauelement und Programmierverfahren hierfür Flash memory device and programming method therefor
08/30/2006EP1696442A2 Semiconductor circuit device and method for operating this semiconductor circuit device
08/30/2006EP1696441A1 Phase change memory device and a method of fabricating the same
08/30/2006EP1695357A2 Nand memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
08/30/2006EP1695356A2 Nand memory array incorporating multiple series selection devices and method for operation of same
08/30/2006CN1826660A Selection circuit for accurate memory read operations
08/30/2006CN1826659A Tracking cells for a memory system
08/30/2006CN1825487A Non-volatile memory unit
08/30/2006CN1825486A Flash cell fuse circuit and method of fusing a flash cell
08/30/2006CN1825485A Multi-pattern multi-stage charge pump
08/30/2006CN1825484A Method for operating a memory device
08/30/2006CN1825483A Nonvolatile memory device and method of programming/reading the same
08/30/2006CN1825482A Starter key of construction equipment and maintenance system of construction equipment using the same
08/29/2006US7099990 Method of updating data for a non-volatile memory
08/29/2006US7099985 Using a processor to program a semiconductor memory
08/29/2006US7099229 Nonvolatile memory device having circuit for stably supplying desired current during data writing
08/29/2006US7099220 Methods for erasing flash memory
08/29/2006US7099213 Page buffer for flash memory device
08/29/2006US7099211 Flash memory device capable of reducing test time and test method thereof
08/29/2006US7099210 Semiconductor memory device having memory cells with floating gates and memory cell threshold voltage control method
08/29/2006US7099207 Semiconductor memory device and method for masking predetermined area of memory cell array during write operation
08/29/2006US7099200 Nonvolatile semiconductor memory
08/29/2006US7099199 Nonvolatile semiconductor memory device
08/29/2006US7099198 Row decoder in flash memory and erase method of flash memory cell using the same
08/29/2006US7099197 Semiconductor memory device
08/29/2006US7099196 Flash memory device and program verification method thereof
08/29/2006US7099195 Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices
08/29/2006US7099194 Error recovery for nonvolatile memory
08/29/2006US7099193 Nonvolatile semiconductor memory device, electronic card and electronic apparatus
08/29/2006US7099192 Nonvolatile flash memory and method of operating the same
08/29/2006US7099191 Channel erase type nonvolatile semiconductor memory device and electronic card and electronic apparatus using the device
08/29/2006US7099190 Data storage system
08/29/2006US7099188 Bit line reference circuits for binary and multiple-bit-per-cell memories
08/29/2006US7099187 Read/write circuit for accessing chalcogenide non-volatile memory cells
08/29/2006US7099181 Non-volatile dynamic random access memory
08/29/2006US7099173 Stacked layered type semiconductor memory device
08/29/2006US7098727 Boosting circuit
08/29/2006US7098713 Delay circuit having function of filter circuit
08/29/2006US7098504 Nonvolatile semiconductor storage device and production method therefor
08/29/2006US7098122 Method of fabricating a vertically integrated memory cell