G11C 16 - Erasable programmable read-only memories

Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2006
11/23/2006	WO2006124122A2 Erasing non-volatile memory utilizing changing word line conditions to compensate for slower frasing memory cells
11/23/2006	WO2006123415A1 Semiconductor integrated circuit apparatus and id tag
11/23/2006	WO2006123306A1 Method for controlling the 'first-to-melt' region in a pcm cell and devices obtained thereof
11/23/2006	WO2006123305A1 Method for controlling the 'first-to-melt' region in a pcm cell and devices obtained thereof
11/23/2006	WO2006078531A3 Scheduling of housekeeping operations in flash memory systems
11/23/2006	US20060265564 Software command sequence for optimized power consumption
11/23/2006	US20060263983 Vertical transistor with horizontal gate layers
11/23/2006	US20060262609 Non-volatile semiconductor memory device and semiconductor disk device
11/23/2006	US20060262607 Memory block erasing in a flash memory device
11/23/2006	US20060262606 Memory block erasing in a flash memory device
11/23/2006	US20060262605 Nonvolatile semiconductor memory device
11/23/2006	US20060262604 Controlling multiple signal polarity in a semiconductor device
11/23/2006	US20060262602 NAND flash cell structure
11/23/2006	US20060262601 Memory cell repair using fuse programming method in a flash memory device
11/23/2006	US20060262600 Non-Volatile semiconductor memory device
11/23/2006	US20060262599 Area efficient differential EEPROM cell with improved data retention and read/write endurance
11/23/2006	US20060262598 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
11/23/2006	US20060262589 Semiconductor integrated circuit, operating method thereof, and ic card including the circuit
11/23/2006	US20060262584 Computer Memory Cards Using Flash EEprom Integrated Circuit Chips and Memory-Controller Systems
11/23/2006	US20060261404 Vertical NROM NAND flash memory array
11/23/2006	US20060261376 Memory utilizing oxide-nitride nanolaminates
11/23/2006	DE102005027197B3 Verfahren und Anordnung zur Programmierung einer Speicherzelle Method and apparatus for programming a memory cell
11/22/2006	EP1724850A2 Low power phase change memory cell with large read signal
11/22/2006	EP1724786A1 Method for accessing one-time programmable memory
11/22/2006	EP1724784A1 High-voltage switch with low output ripple for non-volatile floating-gate memories
11/22/2006	CN2840197Y Usb闪存卡 Usb Flash Card
11/22/2006	CN1868068A Fully depleted silicon-on-insulator CMOS logic
11/22/2006	CN1866402A Method and system for preventing data falsification for programmable read only memory
11/22/2006	CN1866401A Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
11/22/2006	CN1866400A Method for accessing memory
11/22/2006	CN1866399A Storage controller, involatile storage,involatile storage system and data inputting method
11/22/2006	CN1866224A Mobile memory device and method for accessing encrypted data in mobile memory device
11/22/2006	CN1286182C Highly-integrated semiconductor memory and process for preparation of the memory
11/22/2006	CN1286118C Semiconductor storage device
11/22/2006	CN1286114C Protected real-time writing-in for volatile storage
11/21/2006	US7139895 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
11/21/2006	US7139864 Non-volatile memory and method with block management system
11/21/2006	US7139847 Semiconductor memory device having externally controllable data input and output mode
11/21/2006	US7139465 Non-volatile memory with improved programming and method therefor
11/21/2006	US7139202 Semiconductor storage device, mobile electronic apparatus, and method for controlling the semiconductor storage device
11/21/2006	US7139201 Non-volatile semiconductor memory device and memory system using the same
11/21/2006	US7139200 Method of identifying logical information in a programming and erasing cell by on-side reading scheme
11/21/2006	US7139198 Efficient verification for coarse/fine programming of non-volatile memory
11/21/2006	US7139197 Voltage regulation system for a multiword programming of a low integration area non volatile memory
11/21/2006	US7139196 Sub-volt sensing for digital multilevel flash memory
11/21/2006	US7139195 EEPROM memory comprising a non-volatile register integrated into the memory array thereof
11/21/2006	US7139194 Nonvolatile semiconductor memory
11/21/2006	US7139193 Non-volatile memory with two adjacent memory cells sharing same word line
11/21/2006	US7139192 Programming of multi-level memory cells on a continuous word line
11/21/2006	US7139188 Memory architecture and method of manufacture and operation thereof
11/21/2006	US7138817 Method and apparatus for testing defective portion of semiconductor device
11/21/2006	US7137893 Method and apparatus for write protecting a gaming storage medium
11/16/2006	WO2006122245A1 Memory block erasing in a flash memory device
11/16/2006	WO2006121837A2 Nonvolatile memory cell comprising a diode and a resistance-switching material
11/16/2006	WO2006120310A1 Device for protecting a memory against fault-injection attacks
11/16/2006	US20060259729 Semiconductor memory device, a sector-address conversion circuit, an address-conversion method, and operation method of the semiconductor memory device
11/16/2006	US20060259716 Bit inversion in memory devices
11/16/2006	US20060259653 Using a processor to program a semiconductor memory
11/16/2006	US20060258097 Memory utilizing oxide-nitride nanolaminates
11/16/2006	US20060256633 Handling defective memory blocks of NAND memory devices
11/16/2006	US20060256626 Integrated Circuit with Analog or Multilevel Storage Cells and User-Selectable Sampling Frequency
11/16/2006	US20060256624 Erase block data splitting
11/16/2006	US20060256623 Partial string erase scheme in a flash memory device
11/16/2006	US20060256622 Memory block erasing in a flash memory device
11/16/2006	US20060256621 Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory
11/16/2006	US20060256620 Programming memory devices
11/16/2006	US20060256619 Sense amplifier circuit for parallel sensing of four current levels
11/16/2006	US20060256618 Flash memory array using adjacent bit line as source
11/16/2006	US20060256617 Semiconductor device and method for controlling operation thereof
11/16/2006	US20060256616 Semiconductor device that enables simultaneous read and write/read operation
11/16/2006	US20060256615 Horizontal and vertical error correction coding (ECC) system and method
11/15/2006	EP1721321A2 Non-volatile memory array with simultaneous write and erase feature
11/15/2006	EP0974229B1 Broadcast and reception system, and conditional access system therefor
11/15/2006	CN2837928Y Data output circuit with data readout detection circuit
11/15/2006	CN2837927Y Data output circuit applicable to passive electronic tags
11/15/2006	CN1864271A Fowler-nordheim block alterable EEPROM memory cell
11/15/2006	CN1864253A 非易失性存储装置 Nonvolatile memory device
11/15/2006	CN1864231A Memory device and method using positive gate stress to recover overerased cell
11/15/2006	CN1862705A Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory
11/15/2006	CN1862704A Threshold voltage shift in NROM cells
11/15/2006	CN1285171C Oscillator circuit, booster circuit, nonvolatile memory device, and semiconductor device
11/14/2006	US7137027 Nonvolatile memory system
11/14/2006	US7136978 System and method for using dynamic random access memory and flash memory
11/14/2006	US7136771 Semiconductor device and testing circuit which can carries out a verifying test effectively for non-volatile memory cells
11/14/2006	US7136307 Write state machine architecture for flash memory internal instructions
11/14/2006	US7136306 Single bit nonvolatile memory cell and methods for programming and erasing thereof
11/14/2006	US7136305 Sense amplifier with equalizer
11/14/2006	US7136304 Method, system and circuit for programming a non-volatile memory array
11/14/2006	US7136302 Integrated circuit memory device and method
11/14/2006	US7136301 Semiconductor memory device and driving method thereof
11/14/2006	US7136299 High-density phase change cell array and phase change memory device having the same
11/14/2006	US7135911 Potential detector and semiconductor integrated circuit
11/14/2006	US7135890 SCL type FPGA with multi-threshold transistors and method for forming same
11/14/2006	US7135882 Semiconductor integrated circuit device and control method for the semiconductor integrated circuit device
11/14/2006	US7135737 Non-volatile flash memory device
11/14/2006	US7135734 Graded composition metal oxide tunnel barrier interpoly insulators
11/14/2006	US7135726 Semiconductor memory and its production process
11/09/2006	WO2006119017A1 Configuration finalization on first valid nand command
11/09/2006	WO2006118646A2 Predictive methods and apparatus for non-volatile memory
11/09/2006	WO2006118636A2 Memory structure and method of programming

1 ... 217 218 219 220 221 222 223 224 225 226 227 228 229 230 231 232 233 234 235 236 237 ... 444