Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2007
02/13/2007US7177217 Method and circuit for verifying and eventually substituting defective reference cells of a memory
02/13/2007US7177200 Two-phase programming of a flash memory
02/13/2007US7177199 Behavior based programming of non-volatile memory
02/13/2007US7177197 Latched programming of memory and method
02/13/2007US7177196 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
02/13/2007US7177195 Reducing the effects of noise in non-volatile memories through multiple reads
02/13/2007US7177193 Programmable fuse and antifuse and method therefor
02/13/2007US7177189 Memory defect detection and self-repair technique
02/13/2007US7177188 Semiconductor memory device, display device, and portable electronic apparatus
02/13/2007US7177187 Semiconductor device having a nonvolatile memory array and an authentication circuit arranged in a vertical stack configuration
02/13/2007US7177186 High bandwidth datapath load and test of multi-level memory cells
02/13/2007US7177185 Non-volatile flash memory device having dual-bit floating gate
02/13/2007US7177184 Selective operation of a multi-state non-volatile memory system in a binary mode
02/13/2007US7177183 Multiple twin cell non-volatile memory array and logic block structure and method therefor
02/13/2007US7177182 Rewriteable electronic fuses
02/13/2007US7177173 Pattern layout of word line transfer transistors in NAND flash memory which executes subblock erase
02/13/2007US7177172 Semiconductor memory device, electronic card and electronic device
02/13/2007US7177171 Semiconductor device
02/13/2007US7176747 Multi-level high voltage generator
02/13/2007US7176713 Integrated circuits with RAM and ROM fabrication options
02/13/2007US7176517 Flash memories and methods of fabricating the same
02/13/2007US7176077 Methods of forming memory cells and arrays having underlying source-line connections
02/13/2007US7176073 Methods of forming memory cells having diodes and electrode plates connected to source/drain regions
02/08/2007WO2007016167A1 Programming non-volatile memory with self-adjusting maximum program loop
02/08/2007WO2007015863A2 Read more for a page- and row-divided memory based on skipping non- programmed rows
02/08/2007WO2007015722A2 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
02/08/2007US20070033363 Method for reading while writing to a single partition flash memory
02/08/2007US20070033334 Non-volatile memory card and transfer interruption means
02/08/2007US20070030745 Referencing scheme for trap memory
02/08/2007US20070030740 Semiconductor device and control method of the same
02/08/2007US20070030737 NAND flash memory cell programming
02/08/2007US20070030736 Variable source resistor for flash memory
02/08/2007US20070030735 Page buffer circuit and method for multi-level NAND programmable memories
02/08/2007US20070030734 Reclaiming Data Storage Capacity in Flash Memories
02/08/2007US20070030733 Faulty storage area marking and accessing method and system
02/08/2007US20070030732 Double page programming system and method
02/08/2007US20070030731 Non-volatile semiconductor memory device
02/08/2007US20070030730 Nand flash memory with erase verify based on shorter evaluation time
02/08/2007US20070030729 Method of sensing an eeprom reference cell
02/08/2007US20070030048 Voltage Switching Circuit
02/08/2007DE102005037286A1 Halbleiterspeicherbauelement The semiconductor memory device
02/08/2007DE10043397B4 Flash-Speicherbauelement mit Programmierungszustandsfeststellungsschaltung und das Verfahren dafür Flash memory device with programming state detection circuit and method thereof
02/08/2007CA2624408A1 Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts
02/07/2007EP1750281A1 Nonvolatile memory device with multiple references and corresponding control method
02/07/2007EP1750279A2 3-level non-volatile semiconductor memory device and method of driving the same
02/07/2007EP1750277A1 Configuration of a multi-level flash memory device
02/07/2007EP1750271A1 Multistage regulator for charge-pump boosted voltage applications
02/07/2007EP1750217A1 Protection of stored contents of a data carrier
02/07/2007CN1910701A NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
02/07/2007CN1910558A Semiconductor memory device and its control method
02/07/2007CN1909251A Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer
02/07/2007CN1909113A Method and apparatus for sensing a state of a memory cell
02/07/2007CN1909112A 半导体装置 Semiconductor device
02/07/2007CN1909111A Charge trap-type 3-level non-volatile semiconductor memory device and method of driving the same
02/07/2007CN1299354C Method of controlling threshold voltage of NROM cell
02/06/2007US7174440 Method and apparatus for performing block caching in a non-volatile memory system
02/06/2007US7173869 Regulating voltages in semiconductor devices
02/06/2007US7173863 Flash controller cache architecture
02/06/2007US7173862 Non-volatile semiconductor memory device, method for sub-block erase and electric device with the same
02/06/2007US7173861 Nonvolatile memory device for preventing bitline high voltage from discharge
02/06/2007US7173860 Source controlled operation of non-volatile memories
02/06/2007US7173859 Faster programming of higher level states in multi-level cell flash memory
02/06/2007US7173858 Nonvolatile memory and method of driving the same
02/06/2007US7173857 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data
02/06/2007US7173856 Sense amplifier for a non-volatile memory device
02/06/2007US7173854 Non-volatile memory and method with compensation for source line bias errors
02/06/2007US7173853 Nonvolatile semiconductor memory
02/06/2007US7173850 Nonvolatile semiconductor memory
02/06/2007US7173849 Method of programming and erasing multi-level flash memory
02/06/2007US7173549 Semiconductor integrated circuit in which voltage down converter output can be observed as digital value and voltage down converter output voltage is adjustable
02/01/2007WO2007014038A2 Split gate storage device including a horizontal first gate and a vertical second gate in a trench
02/01/2007WO2007013568A1 Semiconductor storage device
02/01/2007WO2007013154A1 Semiconductor device and method for controlling the same
02/01/2007WO2007013133A1 Semiconductor device and method for manufacturing same
02/01/2007WO2007013132A1 Semiconductor device and control method thereof
02/01/2007WO2006132903A3 Non-volatile memory cells without diffusion junctions
02/01/2007US20070028036 Top/bottom symmetrical protection scheme for flash
02/01/2007US20070025165 Charge pump for programmable semiconductor memory
02/01/2007US20070025160 Channel discharging after erasing flash memory devices
02/01/2007US20070025159 Non-volatile memory device having improved program speed and associated programming method
02/01/2007US20070025158 Semiconductor memory device and related programming method
02/01/2007US20070025157 Method for programming non-volatile memory with self-adjusting maximum program loop
02/01/2007US20070025156 System for programming non-volatile memory with self-adjusting maximum program loop
02/01/2007US20070025155 Method and apparatus for controlling slope of word line voltage in nonvolatile memory device
02/01/2007US20070025154 Semiconductor device and method of controlling the same
02/01/2007US20070025153 Method of operating non-volatile memory device
02/01/2007US20070025151 Flash memory device capable of storing multi-bit data and single-bit data
02/01/2007US20070025150 Flash memory device capable of preventing program disturbance according to partial programming
02/01/2007US20070025149 Nonvolatile Semiconductor Memory Device
02/01/2007US20070025148 Semiconductor memory device with a page buffer having an improved layout arrangement
02/01/2007US20070025147 Non-volatile semiconductor memory device
02/01/2007US20070025146 Sensing circuit for multi-level flash memory
02/01/2007US20070025145 Non-volatile memory cell using high-k material and inter-gate programming
02/01/2007US20070023809 Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity
02/01/2007DE102006035241A1 Nichtflüchtiges Speicherbauelement, Programmierverfahren und Speichersystem The non-volatile memory device programming method and storage system
02/01/2007DE102006034498A1 Karte mit integriertem Schaltkreis und Verfahren zum Verbessern der Schreib-/Leselebensdauer von nicht-flüchtigem Speicher An integrated circuit and method for improving the read / write life of non-volatile memory
02/01/2007DE102006034263A1 Non-volatile memory cell, e.g. for smart cards and mobile phones, has spacings between cell gate structure and selection lines made less than width of selection lines
02/01/2007DE102006033385A1 Speicherbauelement und Verfahren zum Ansteuern einer Wortleitung für einen Datenlesevorgang Memory device and method for driving a word line for a data read operation
02/01/2007CA2616350A1 Semiconductor memory device
01/2007
01/31/2007EP1748473A2 Non-volatile memory transistor with distributed charge storage sites