Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2013
07/30/2013US8498142 Resistance change memory
07/30/2013US8498141 Non-volatile semiconductor memory device
07/30/2013US8498140 Two-transistor floating-body dynamic memory cell
07/30/2013US8497559 MRAM with means of controlling magnetic anisotropy
07/30/2013US8497555 Vertical memory devices including indium and/or gallium channel doping
07/30/2013US8497139 Magnetic memory device and method of manufacturing the same
07/25/2013WO2013109842A1 Nonvolatile memory device having a current limiting element
07/25/2013WO2013109767A1 Static random access memory cell with single-sided buffer and asymmetric construction
07/25/2013WO2013109284A1 Multi-purpose register programming via per dram addressability mode
07/25/2013WO2013108124A1 System and method for modifying activation of a sense amplifier
07/25/2013WO2013107779A1 Circuit and method for sensing a difference in voltage on a pair of dual signal lines, in particular through equalize transistor
07/25/2013US20130190185 Systems, methods and apparatus for planar expulsion shields
07/25/2013US20130188421 Magnetic device, and method for reading from and writing to said device
07/25/2013US20130188420 Non-destructive self-reference spin-transfer torque memory
07/25/2013US20130188419 Memory with separate read and write paths
07/25/2013US20130188418 Magnetoresistive random access memory
07/25/2013US20130188417 Memory circuit and method for routing the memory circuit
07/25/2013US20130188416 Memory circuits having a diode-connected transistor with back-biased control
07/25/2013US20130188413 Apparatuses and methods for reading and/or programming data in memory arrays having varying available storage ranges
07/25/2013US20130188412 Ferroelectric random access memory and memory system
07/25/2013US20130188411 Analog Memories Utilizing Ferroelectric Capacitors
07/25/2013US20130186953 Camera unit incoporating program script scanner
07/24/2013EP2617037A2 Spin torque transfer memory cell structures and methods
07/24/2013CN203085184U Two-port static random access memory applying single-port storage cell
07/24/2013CN203085183U OCD (Output Command Data) unit compatible with DDR2 (Double Data Rate 2) and DDR3 (Double Data Rate 3)
07/24/2013CN203085182U Asynchronous static random access memory based on IP (Internet Protocol) of synchronous static random access memory
07/24/2013CN103222007A Techniques for the fast settling of word lines in NAND flash memory
07/24/2013CN103221927A Dynamically configurable embedded flash memory for electronic devices
07/24/2013CN103219461A Magnetoresistive random access memory
07/24/2013CN103219037A In-chip memory with multi-port read-write
07/24/2013CN103219036A Adjustable static state random access memory self-timing circuit
07/24/2013CN103219035A Memory circuit and method of writing datum to memory circuit
07/24/2013CN103219034A Matching method of conveniently-wired DDR1 (discoidin domain receptor 1) matching resistor
07/24/2013CN102280138B Storage method with cumulative write-in characteristic, storage device and storage system
07/24/2013CN102044290B Memory and dormant circuit
07/24/2013CN102034527B Method and apparatus for programming a multi-level memory
07/24/2013CN102024491B Random access memory and control method thereof
07/24/2013CN101866688B Keeper, integrated circuit, and access method
07/24/2013CN101627442B Margined neighbor reading for non-volatile memory read operations including coupling compensation
07/24/2013CN101246888B Integrated circuit, dual port sram cell and semiconductor structure
07/23/2013US8495118 Tunable random bit generator with magnetic tunnel junction
07/23/2013US8493814 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
07/23/2013US8493809 Refresh control circuit and semiconductor memory apparatus using the same
07/23/2013US8493804 Memory cell array latchup prevention
07/23/2013US8493796 Nonvolatile semiconductor memory device
07/23/2013US8493795 Voltage stabilization device and semiconductor device including the same, and voltage generation method
07/23/2013US8493794 Non-volatile memory cell and methods for programming, erasing and reading thereof
07/23/2013US8493792 Programming method of non-volatile memory device
07/23/2013US8493789 Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
07/23/2013US8493788 Semiconductor memory device and control method thereof
07/23/2013US8493787 FTP memory device programmable and erasable at cell level
07/23/2013US8493785 Page-buffer and non-volatile semiconductor memory including page buffer
07/23/2013US8493783 Memory device readout using multiple sense times
07/23/2013US8493782 Memory device and program method thereof
07/23/2013US8493780 Non-volatile magnetic memory element with graded layer
07/23/2013US8493779 Non-volatile magnetic memory element with graded layer
07/23/2013US8493778 Non-volatile magnetic memory element with graded layer
07/23/2013US8493777 Non-volatile perpendicular magnetic memory with low switching current and high thermal stability
07/23/2013US8493776 MRAM with current-based self-referenced read operations
07/23/2013US8493775 Semiconductor device
07/23/2013US8493774 Performing logic functions on more than one memory cell within an array of memory cells
07/23/2013US8493773 Memory based illumination device
07/23/2013US8493772 Phase change memory structures and methods
07/23/2013US8493771 Non-volatile memory device ion barrier
07/23/2013US8493770 Non-volatile semiconductor storage device with concurrent read operation
07/23/2013US8493769 Memory devices including decoders having different transistor channel dimensions and related devices
07/23/2013US8493768 Memory cell and memory device using the same
07/23/2013US8493138 Memcapacitive devices
07/23/2013US8492881 Magnetic storage device
07/23/2013US8492810 Method of fabricating an integrated electronic circuit with programmable resistance cells
07/23/2013US8492169 Magnetic tunnel junction for MRAM applications
07/18/2013WO2013105460A1 Semiconductor memory circuit and device
07/18/2013WO2013105414A1 Storage control device, storage device, information processing system, and processing methods therefor
07/18/2013WO2013105261A1 Sram memory card and voltage monitoring circuit
07/18/2013WO2013054389A9 Semiconductor device
07/18/2013WO2013050983A3 Logic gate and a corresponding method of function
07/18/2013US20130185499 Fast exit from self-refresh state of a memory device
07/18/2013US20130182522 Memory device, method of operating the same, and apparatus including the same
07/18/2013US20130182500 Latching circuit
07/18/2013US20130182499 MRAM Cell and Method for Writing to the MRAM Cell using a Thermally Assisted Write Operation with a Reduced Field Current
07/18/2013US20130182498 Magnetic memory device and data writing method for magnetic memory device
07/18/2013US20130182497 Semiconductor storage device
07/18/2013US20130182496 Semiconductor storage device
07/18/2013US20130182495 Efficient Static Random-Access Memory Layout
07/18/2013US20130182494 Skewed sram cell
07/18/2013US20130182492 10t sram cell with near dual port functionality
07/18/2013US20130182490 Static Random Access Memory Cell with Single-Sided Buffer and Asymmetric Construction
07/18/2013US20130182489 Replacement of a faulty memory cell with a spare cell for a memory circuit
07/18/2013US20130182487 Programmable metallization cell with two dielectric layers
07/18/2013US20130182486 Memory cells having a common gate terminal
07/18/2013US20130182020 Disposable digital camera with printing assembly
07/18/2013DE202007019469U9 Vorrichtung zum Kommunizieren von Befehls- und Adresssignalen Apparatus for communicating command and address signals
07/18/2013DE19823583B4 Kombiniertes Halbleiterspeicher- und -logikbauelement sowie Speichertest-Steuerschaltung und Speichertestverfahren hierfür Combined semiconductor memory and -logikbauelement and memory test control circuit and memory test method therefor
07/18/2013DE112004001704B4 Verfahren zum Auffrischen eines Speichers und integrierter Schaltkreis, der einen auffrischbaren Speicher enthält A method for refreshing a memory, and an integrated circuit that includes a refreshable memory
07/18/2013DE102005047197B4 Speichersystem und Betriebsverfahren Storage system and method of operation
07/17/2013EP2615611A2 Multi-mode memory device and method
07/17/2013EP2615610A1 MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current
07/17/2013EP2614892A2 Static random-access cell, active matrix device and array element circuit
07/17/2013EP2614504A1 System and method for shared sensing mram
07/17/2013EP2189986B1 Delay adjustment device, semiconductor device and delay adjustment method
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