Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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06/12/2013 | CN102034526B Method for realizing static and dynamic random access memory (SDRAM) refresh by using field programmable gate array (FPGA) |
06/12/2013 | CN101814323B Verification circuit and method of phase change memory array |
06/12/2013 | CN101779373B Dynamic impedance control for input/output buffers |
06/11/2013 | US8464087 Flash memory devices with high data transmission rates and memory systems including such flash memory devices |
06/11/2013 | US8462580 Memory system with reversible resistivity-switching using pulses of alternatrie polarity |
06/11/2013 | US8462574 Memory sensing with secondary buffer |
06/11/2013 | US8462566 Memory module with termination component |
06/11/2013 | US8462559 Memory erase methods and devices |
06/11/2013 | US8462558 Program and erase methods for nonvolatile memory |
06/11/2013 | US8462557 Methods of operating memory cell having asymmetric band-gap tunnel insulator using direct tunneling |
06/11/2013 | US8462556 Method for operating a high density multi-level cell non-volatile flash memory device |
06/11/2013 | US8462555 Nonvolatile memory device and reading method to read first memory cell in accordance of data stored in second memory cell adjacent to first memory cell |
06/11/2013 | US8462553 Cell array for highly-scalable, byte-alterable, two-transistor FLOTOX EEPROM non-volatile memory |
06/11/2013 | US8462551 Flash multi-level threshold distribution scheme |
06/11/2013 | US8462549 Methods and apparatus for read-side intercell interference mitigation in flash memories |
06/11/2013 | US8462547 Offset non-volatile storage |
06/11/2013 | US8462546 Reducing temporal changes in phase change memories |
06/11/2013 | US8462545 Semiconductor phase change memory using multiple phase change layers |
06/11/2013 | US8462544 Spin current generator for STT-MRAM or other spintronics applications |
06/11/2013 | US8462543 Thermally assisted multi-bit MRAM |
06/11/2013 | US8462542 Bit-by-bit write assist for solid-state memory |
06/11/2013 | US8462541 Circuits and methods for reducing minimum supply for register file cells |
06/11/2013 | US8462540 Static random access memory cell |
06/11/2013 | US8462539 Resistive memory element and use thereof |
06/11/2013 | US8462538 Semiconductor device having its standby current reduced |
06/11/2013 | US8462537 Method and apparatus to reset a phase change memory and switch (PCMS) memory cell |
06/11/2013 | US8461638 Non-volatile semiconductor memory device |
06/11/2013 | CA2233789C Semiconductor memory asynchronous pipeline |
06/06/2013 | WO2013080482A1 Spin transfer torque magnetic storage element with low write error rate |
06/06/2013 | WO2013080436A1 Storage element, and storage device |
06/06/2013 | WO2013080413A1 Method for scheduling memory refresh operations including power states |
06/06/2013 | WO2013080102A1 Enhanced data retention mode for dynamic memories |
06/06/2013 | WO2013078536A1 Cpu with stacked memory |
06/06/2013 | US20130145090 Semiconductor storage device and method of controlling the same |
06/06/2013 | US20130145081 Semiconductor device with non-volatile memory and random access memory |
06/06/2013 | US20130141967 Variable resistive memory device and method of fabricating the same |
06/06/2013 | US20130141966 Magnetoresistance effect element and magnetic memory |
06/06/2013 | US20130141965 High density semiconductor memory devices |
06/06/2013 | US20130141964 Memory element and memory apparatus |
06/06/2013 | US20130141963 Methods and Apparatus for FinFET SRAM Cells |
06/06/2013 | US20130141962 Methods and Apparatus for finFET SRAM Arrays in Integrated Circuits |
06/06/2013 | US20130141961 Storage device and driving method thereof |
06/06/2013 | DE102012221806A1 Speicher-Array mit doppelter Stromversorgung, das eine Steuerschaltung besitzt, die für Bitzeilen-Vorlaufladevorgänge dynamisch eine niedrigere von zwei Versorgungsspannungen auswählt, sowie ein zugehöriges Verfahren Storage array with dual power supplies, which has a control circuit that dynamically selects a lower bit lines for Lead-loads of the two supply voltages, and an associated method |
06/06/2013 | DE102006037723B4 Bitleitungsabtastverstärker, Halbleiterspeicherbauelement und zugehörige Verstärkungsverfahren Bitline sense amplifier, semiconductor memory device and associated amplification method |
06/06/2013 | DE102005001892B4 Steuereinheit zur Steuerung eines synchronen Parallel-Serienwandlers Control unit for controlling a synchronous parallel-serial converter |
06/06/2013 | DE10196802B4 Rauschunterdrückung für DRAM-Architekturen mit offener Bitleitung Noise Reduction for DRAM architectures open bit line |
06/06/2013 | DE10016986B4 Halbleiterspeicherbauelement und Verfahren zur Lese-/Schreibsteuerung hierfür The semiconductor memory device and method for reading / writing control for this |
06/05/2013 | EP2600349A1 An ultra low power nine transistor static random access memory cell |
06/05/2013 | EP2600253A1 Semiconductor device and data processing system |
06/05/2013 | EP2599138A1 Writeable magnetic element |
06/05/2013 | EP2599085A1 Magnetic memory element |
06/05/2013 | EP2599084A2 Latching circuit |
06/05/2013 | CN202976855U Circuit suitable for writing operation of high-capacity static random access memory |
06/05/2013 | CN202976854U Circuit capable of strengthening writing operation of static random access memory |
06/05/2013 | CN1750170B Integrated memory device and process |
06/05/2013 | CN103140896A Systems and methods for implementing a programming sequence to enhance die interleave |
06/05/2013 | CN103140895A System and method for shared sensing MRAM |
06/05/2013 | CN103137855A Memory element and memory apparatus |
06/05/2013 | CN103137853A Memory element and memory apparatus |
06/05/2013 | CN103137852A Memory element and memory apparatus |
06/05/2013 | CN103137191A Programming of phase-change memory cells |
06/05/2013 | CN103137190A Array-interleave static random access memory (SRAM) structure capable of achieving subthreshold working |
06/05/2013 | CN103137189A Distributed self-timing circuit |
06/05/2013 | CN103137188A Memory elements with relay devices |
06/05/2013 | CN103137187A Bypass structure of static random access memory (SRAM) |
06/05/2013 | CN103137186A Semiconductor apparatus |
06/05/2013 | CN103137185A Semiconductor memory apparatus |
06/05/2013 | CN103137177A Pipe latch control circuit and semiconductor integrated circuit using the same |
06/05/2013 | CN101783168B Semiconductor integrated circuit device and operating method thereof |
06/04/2013 | US8456940 Semiconductor device |
06/04/2013 | US8456926 Memory write error correction circuit |
06/04/2013 | US8456925 Non-volatile memory device and method for operating the same |
06/04/2013 | US8456921 Nonvolatile memory and operation method of the same |
06/04/2013 | US8456919 Method and apparatus to provide data including hard bit data and soft bit data to a rank modulation decoder |
06/04/2013 | US8456918 NAND flash memory device and method of operating same to reduce a difference between channel potentials therein |
06/04/2013 | US8456917 Logic circuit for a semiconductor memory device, and method of managing an operation in the semiconductor memory device |
06/04/2013 | US8456916 Non-volatile memory unit cell with improved sensing margin and reliability |
06/04/2013 | US8456915 Programming non-volatile storage with fast bit detection and verify skip |
06/04/2013 | US8456914 Memory device with multiple planes |
06/04/2013 | US8456912 Nonvolatile memory device and method for operating the same |
06/04/2013 | US8456911 Intelligent shifting of read pass voltages for non-volatile storage |
06/04/2013 | US8456907 Semiconductor memory device and method of operating the same |
06/04/2013 | US8456906 Memory and operation method therefor |
06/04/2013 | US8456905 Efficient data storage in multi-plane memory devices |
06/04/2013 | US8456904 Sub volt flash memory system |
06/04/2013 | US8456903 Magnetic memory with porous non-conductive current confinement layer |
06/04/2013 | US8456902 Graphene-based switching elements using a diamond-shaped nano-patch and interconnecting nano-ribbons |
06/04/2013 | US8456901 Spin-torque transfer magneto-resistive memory architecture |
06/04/2013 | US8456900 Memory devices and methods of operating the same |
06/04/2013 | US8456899 Spin-torque transfer magneto-resistive memory architecture |
06/04/2013 | US8456898 Magnetic element having perpendicular anisotropy with enhanced efficiency |
06/04/2013 | US8456897 Low cost multi-state magnetic memory |
06/04/2013 | US8456896 Magnetoresistance element and storage device using the same |
06/04/2013 | US8456895 Magnonic magnetic random access memory device |
06/04/2013 | US8456894 Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effect |
06/04/2013 | US8456893 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current |
06/04/2013 | US8456892 Semiconductor integrated circuit |
06/04/2013 | US8456891 Nonvolatile memory cells having oxygen diffusion barrier layers therein |
06/04/2013 | US8456890 Multi-level resistance change memory |
06/04/2013 | US8456889 Semiconductor devices including variable resistance materials and methods of operating the same |