Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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08/10/2004 | US6774673 Level shifter |
08/10/2004 | US6774414 Thin film transistor array panel for a liquid crystal display |
08/10/2004 | US6774387 Programmable resistance memory element |
08/10/2004 | US6773972 Memory cell with transistors having relatively high threshold voltages in response to selective gate doping |
08/10/2004 | US6773929 Ferroelectric memory device and method for manufacturing the same |
08/10/2004 | US6773874 Digital print media output with reduced residual curl |
08/10/2004 | US6773833 First and second magnetic layers have respective first and second magnetizations in an anti-parallel relationship in a state no substantial writing magnetic field is applied. |
08/05/2004 | WO2004066387A1 Magnetic storage cell, magnetic memory device, and magnetic memory device manufacturing method |
08/05/2004 | WO2004066308A1 Magnetic memory device, write current driver circuit, and write current driving method |
08/05/2004 | WO2004066306A2 Mram architecture with a grounded write bit line and electrically isolated read bit line |
08/05/2004 | WO2004066093A2 Distributed memory computing environment and implantation thereof |
08/05/2004 | WO2004066090A2 Query string matching method and apparatus |
08/05/2004 | WO2004032144A3 Spacer integration scheme in mram technology |
08/05/2004 | WO2004027589A3 Clock distribution topology |
08/05/2004 | WO2004001802A3 Nrom memory cell, memory array, related devices and methods |
08/05/2004 | US20040153843 Method for comparing the address of a memory access with an already known address of a faulty memory cell |
08/05/2004 | US20040153826 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
08/05/2004 | US20040153817 Apparatus and method for detecting over-programming condition in multistate memory device |
08/05/2004 | US20040153621 Memory array programming circuit and a method for using the circuit |
08/05/2004 | US20040153620 Address scramble |
08/05/2004 | US20040153603 Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages |
08/05/2004 | US20040153602 Detection circuit for mixed asynchronous and synchronous memory operation |
08/05/2004 | US20040152279 Semiconductor latches and SRAM devices |
08/05/2004 | US20040152262 Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems |
08/05/2004 | US20040152261 Magnetic shielding for magnetic random access memory card |
08/05/2004 | US20040152227 Magnetic memory device having yoke layer, and manufacturing method |
08/05/2004 | US20040152218 Synthetic-ferrimagnet sense-layer for high density MRAM applications |
08/05/2004 | US20040152217 Method for manufacturing NAND type nonvolatile ferroelectric memory cell |
08/05/2004 | US20040151947 Data storage medium with laterally magnetised pad and method for making same |
08/05/2004 | US20040151276 Dual-purpose shift register |
08/05/2004 | US20040151052 Semiconductor memory device with magnetic disturbance reduced |
08/05/2004 | US20040151051 Semiconductor memory device having easily redesigned memory capacity |
08/05/2004 | US20040151050 Semiconductor device with reduced current consumption in standby state |
08/05/2004 | US20040151049 Memory cell with fuse element |
08/05/2004 | US20040151041 Dual port semiconductor memory device |
08/05/2004 | US20040151039 Semiconductor memory device testable with a single data rate and/or dual data rate pattern in a merged data input/output pin test mode |
08/05/2004 | US20040151033 Semiconductor integrated circuit and IC card |
08/05/2004 | US20040151030 Method of narrowing threshold voltage distribution |
08/05/2004 | US20040151029 Programmable memory cell using charge trapping in a gate oxide |
08/05/2004 | US20040151023 Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices |
08/05/2004 | US20040151022 Memory trouble relief circuit |
08/05/2004 | US20040151020 Dynamic memory cell |
08/05/2004 | US20040151019 Ferroelectric memory |
08/05/2004 | US20040151018 Network attached memory and implementation thereof |
08/05/2004 | US20040151013 Semiconductor memory |
08/05/2004 | US20040150901 Magnetic device and method of making the same |
08/05/2004 | US20040150470 SOI sense amplifier method and apparatus |
08/05/2004 | US20040150440 Clock synchronization circuit and semiconductor device |
08/05/2004 | US20040150438 Frequency multiplier capable of adjusting duty cycle of a clock and method used therein |
08/05/2004 | US20040150435 Method and apparatus for regulating predriver for output buffer |
08/05/2004 | US20040150091 Magnetic shielding for magnetic random access memory |
08/05/2004 | US20040150059 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
08/05/2004 | US20040150055 Semiconductor device and method of manufacturing a semiconductor device |
08/05/2004 | US20040150051 SRAM cell and method of manufacturing the same |
08/05/2004 | US20040150019 Semiconductor memory device |
08/05/2004 | US20040150018 Semiconductor device having sense amplifier including paired transistors |
08/05/2004 | US20040150017 MRAM cells having magnetic write lines with a stable magnetic state at the end regions |
08/05/2004 | US20040150016 Thin film magnetic memory device and manufacturing method therefor |
08/05/2004 | US20040150011 CMOS process compatible, tunable negative differential resistance (NDR) device and method of operating same |
08/05/2004 | US20040150010 Molecular-junction-nanowire-crossbar-based neural network |
08/05/2004 | US20040150005 Semiconductor memory device having a word line drive circuit and a dummy word line drive circuit |
08/05/2004 | DE69724742T2 Speicherfeldprüfschaltung mit Fehlermeldung Speicherfeldprüfschaltung with error message |
08/05/2004 | DE19801557B4 Kontakt-Prüfschaltung in einer Halbleitereinrichtung Contact check circuit in a semiconductor device |
08/05/2004 | DE19748031B4 Integrierte Halbleiterschaltungsvorrichtung mit einer taktfrequenzinvarianten Spannungsheruntertransformierschaltung A semiconductor integrated circuit device having a taktfrequenzinvarianten Spannungsheruntertransformierschaltung |
08/05/2004 | DE10361871A1 Halbleiterspeichereinrichtung mit einer DRAM Zellenstruktur und als SRAM verwendet A semiconductor memory device used with a DRAM cell structure and as a SRAM |
08/05/2004 | DE10341795A1 Halbleiterspeichervorrichtung A semiconductor memory device |
08/05/2004 | DE10334424A1 Halbleiterspeichervorrichtung mit Doppelzelleneinheiten A semiconductor memory device with dual cell units |
08/05/2004 | DE10322882A1 Integrated memory circuit with dynamic memory cell, into which date is to be written, fitted on word line and bit line, while read-out amplifier is coupled to two supply lines for high and low supply potential respectively to amplify charge |
08/05/2004 | DE10302224A1 Integrierter Speicher Built-in Memory |
08/05/2004 | DE10301856A1 Integrierter Speicher Built-in Memory |
08/05/2004 | DE10255867B3 Dynamischer RAM-Halbleiterspeicher und Verfahren zum Betrieb desselben A dynamic random access semiconductor memory and method of operation thereof |
08/04/2004 | EP1443521A2 Memory read and write operations with address scrambling |
08/04/2004 | EP1443520A2 Semiconductor memory device |
08/04/2004 | EP1442462A1 Using transfer bits during data transfer from non-volatile to volatile memories |
08/04/2004 | EP1442374A2 Multi-core multi-thread processor |
08/04/2004 | EP1442365A2 Stream processor with cryptographic co-processor |
08/04/2004 | EP1442355A2 Dram power management |
08/04/2004 | EP1377983B1 Reference for mram cell |
08/04/2004 | EP1169720B1 Magnetic materials |
08/04/2004 | CN1518797A Antifuse reroute of dies |
08/04/2004 | CN1518744A Duty-cycle-efficent SRAM cell test |
08/04/2004 | CN1518742A Low power hynamic RAM with bit line pre-charge, inversion data write and storing data output |
08/04/2004 | CN1518226A Analog delay phasehocked loop with duty cycle correcting circuit |
08/04/2004 | CN1518211A Adjustable shifting difference amplifier |
08/04/2004 | CN1518114A 半导体存储器 Semiconductor memory |
08/04/2004 | CN1518104A 半导体器件 Semiconductor devices |
08/04/2004 | CN1518086A Testing mode control device using nonvolatile ferroeletric storage |
08/04/2004 | CN1518005A Semiconductor memory of reducing power dissipation when ageing test |
08/04/2004 | CN1518001A Semiconductor storing device with subamplifier |
08/04/2004 | CN1518000A Method for managing data in flash storage medium |
08/04/2004 | CN1517999A Biphase precharging circuit and its composite eliminating leakage current circuit |
08/04/2004 | CN1517998A Circuit for eliminating short-circuit leakage current of dynamic random freatment internal storage |
08/04/2004 | CN1517997A Semiconductor storing device with double-unit |
08/04/2004 | CN1517996A System and method of accessor conductor magnetic RAM |
08/04/2004 | CN1517995A Current refrence generator for magnetic RAM |
08/04/2004 | CN1160861C Producing negative voltage by using reference voltage |
08/04/2004 | CN1160738C Intergrated storage unit having storage cells and reference unit |
08/04/2004 | CN1160735C Input receiver circuit |
08/04/2004 | CN1160734C Storage assembly consisting of resistive ferroelectric storage cells |
08/04/2004 | CN1160733C Strength-adjustable driving circuit and adjustable method |