Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2004
08/10/2004US6774673 Level shifter
08/10/2004US6774414 Thin film transistor array panel for a liquid crystal display
08/10/2004US6774387 Programmable resistance memory element
08/10/2004US6773972 Memory cell with transistors having relatively high threshold voltages in response to selective gate doping
08/10/2004US6773929 Ferroelectric memory device and method for manufacturing the same
08/10/2004US6773874 Digital print media output with reduced residual curl
08/10/2004US6773833 First and second magnetic layers have respective first and second magnetizations in an anti-parallel relationship in a state no substantial writing magnetic field is applied.
08/05/2004WO2004066387A1 Magnetic storage cell, magnetic memory device, and magnetic memory device manufacturing method
08/05/2004WO2004066308A1 Magnetic memory device, write current driver circuit, and write current driving method
08/05/2004WO2004066306A2 Mram architecture with a grounded write bit line and electrically isolated read bit line
08/05/2004WO2004066093A2 Distributed memory computing environment and implantation thereof
08/05/2004WO2004066090A2 Query string matching method and apparatus
08/05/2004WO2004032144A3 Spacer integration scheme in mram technology
08/05/2004WO2004027589A3 Clock distribution topology
08/05/2004WO2004001802A3 Nrom memory cell, memory array, related devices and methods
08/05/2004US20040153843 Method for comparing the address of a memory access with an already known address of a faulty memory cell
08/05/2004US20040153826 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
08/05/2004US20040153817 Apparatus and method for detecting over-programming condition in multistate memory device
08/05/2004US20040153621 Memory array programming circuit and a method for using the circuit
08/05/2004US20040153620 Address scramble
08/05/2004US20040153603 Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages
08/05/2004US20040153602 Detection circuit for mixed asynchronous and synchronous memory operation
08/05/2004US20040152279 Semiconductor latches and SRAM devices
08/05/2004US20040152262 Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systems
08/05/2004US20040152261 Magnetic shielding for magnetic random access memory card
08/05/2004US20040152227 Magnetic memory device having yoke layer, and manufacturing method
08/05/2004US20040152218 Synthetic-ferrimagnet sense-layer for high density MRAM applications
08/05/2004US20040152217 Method for manufacturing NAND type nonvolatile ferroelectric memory cell
08/05/2004US20040151947 Data storage medium with laterally magnetised pad and method for making same
08/05/2004US20040151276 Dual-purpose shift register
08/05/2004US20040151052 Semiconductor memory device with magnetic disturbance reduced
08/05/2004US20040151051 Semiconductor memory device having easily redesigned memory capacity
08/05/2004US20040151050 Semiconductor device with reduced current consumption in standby state
08/05/2004US20040151049 Memory cell with fuse element
08/05/2004US20040151041 Dual port semiconductor memory device
08/05/2004US20040151039 Semiconductor memory device testable with a single data rate and/or dual data rate pattern in a merged data input/output pin test mode
08/05/2004US20040151033 Semiconductor integrated circuit and IC card
08/05/2004US20040151030 Method of narrowing threshold voltage distribution
08/05/2004US20040151029 Programmable memory cell using charge trapping in a gate oxide
08/05/2004US20040151023 Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
08/05/2004US20040151022 Memory trouble relief circuit
08/05/2004US20040151020 Dynamic memory cell
08/05/2004US20040151019 Ferroelectric memory
08/05/2004US20040151018 Network attached memory and implementation thereof
08/05/2004US20040151013 Semiconductor memory
08/05/2004US20040150901 Magnetic device and method of making the same
08/05/2004US20040150470 SOI sense amplifier method and apparatus
08/05/2004US20040150440 Clock synchronization circuit and semiconductor device
08/05/2004US20040150438 Frequency multiplier capable of adjusting duty cycle of a clock and method used therein
08/05/2004US20040150435 Method and apparatus for regulating predriver for output buffer
08/05/2004US20040150091 Magnetic shielding for magnetic random access memory
08/05/2004US20040150059 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication
08/05/2004US20040150055 Semiconductor device and method of manufacturing a semiconductor device
08/05/2004US20040150051 SRAM cell and method of manufacturing the same
08/05/2004US20040150019 Semiconductor memory device
08/05/2004US20040150018 Semiconductor device having sense amplifier including paired transistors
08/05/2004US20040150017 MRAM cells having magnetic write lines with a stable magnetic state at the end regions
08/05/2004US20040150016 Thin film magnetic memory device and manufacturing method therefor
08/05/2004US20040150011 CMOS process compatible, tunable negative differential resistance (NDR) device and method of operating same
08/05/2004US20040150010 Molecular-junction-nanowire-crossbar-based neural network
08/05/2004US20040150005 Semiconductor memory device having a word line drive circuit and a dummy word line drive circuit
08/05/2004DE69724742T2 Speicherfeldprüfschaltung mit Fehlermeldung Speicherfeldprüfschaltung with error message
08/05/2004DE19801557B4 Kontakt-Prüfschaltung in einer Halbleitereinrichtung Contact check circuit in a semiconductor device
08/05/2004DE19748031B4 Integrierte Halbleiterschaltungsvorrichtung mit einer taktfrequenzinvarianten Spannungsheruntertransformierschaltung A semiconductor integrated circuit device having a taktfrequenzinvarianten Spannungsheruntertransformierschaltung
08/05/2004DE10361871A1 Halbleiterspeichereinrichtung mit einer DRAM Zellenstruktur und als SRAM verwendet A semiconductor memory device used with a DRAM cell structure and as a SRAM
08/05/2004DE10341795A1 Halbleiterspeichervorrichtung A semiconductor memory device
08/05/2004DE10334424A1 Halbleiterspeichervorrichtung mit Doppelzelleneinheiten A semiconductor memory device with dual cell units
08/05/2004DE10322882A1 Integrated memory circuit with dynamic memory cell, into which date is to be written, fitted on word line and bit line, while read-out amplifier is coupled to two supply lines for high and low supply potential respectively to amplify charge
08/05/2004DE10302224A1 Integrierter Speicher Built-in Memory
08/05/2004DE10301856A1 Integrierter Speicher Built-in Memory
08/05/2004DE10255867B3 Dynamischer RAM-Halbleiterspeicher und Verfahren zum Betrieb desselben A dynamic random access semiconductor memory and method of operation thereof
08/04/2004EP1443521A2 Memory read and write operations with address scrambling
08/04/2004EP1443520A2 Semiconductor memory device
08/04/2004EP1442462A1 Using transfer bits during data transfer from non-volatile to volatile memories
08/04/2004EP1442374A2 Multi-core multi-thread processor
08/04/2004EP1442365A2 Stream processor with cryptographic co-processor
08/04/2004EP1442355A2 Dram power management
08/04/2004EP1377983B1 Reference for mram cell
08/04/2004EP1169720B1 Magnetic materials
08/04/2004CN1518797A Antifuse reroute of dies
08/04/2004CN1518744A Duty-cycle-efficent SRAM cell test
08/04/2004CN1518742A Low power hynamic RAM with bit line pre-charge, inversion data write and storing data output
08/04/2004CN1518226A Analog delay phasehocked loop with duty cycle correcting circuit
08/04/2004CN1518211A Adjustable shifting difference amplifier
08/04/2004CN1518114A 半导体存储器 Semiconductor memory
08/04/2004CN1518104A 半导体器件 Semiconductor devices
08/04/2004CN1518086A Testing mode control device using nonvolatile ferroeletric storage
08/04/2004CN1518005A Semiconductor memory of reducing power dissipation when ageing test
08/04/2004CN1518001A Semiconductor storing device with subamplifier
08/04/2004CN1518000A Method for managing data in flash storage medium
08/04/2004CN1517999A Biphase precharging circuit and its composite eliminating leakage current circuit
08/04/2004CN1517998A Circuit for eliminating short-circuit leakage current of dynamic random freatment internal storage
08/04/2004CN1517997A Semiconductor storing device with double-unit
08/04/2004CN1517996A System and method of accessor conductor magnetic RAM
08/04/2004CN1517995A Current refrence generator for magnetic RAM
08/04/2004CN1160861C Producing negative voltage by using reference voltage
08/04/2004CN1160738C Intergrated storage unit having storage cells and reference unit
08/04/2004CN1160735C Input receiver circuit
08/04/2004CN1160734C Storage assembly consisting of resistive ferroelectric storage cells
08/04/2004CN1160733C Strength-adjustable driving circuit and adjustable method