Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2006
11/01/2006CN1856838A Temperature sensor scheme
11/01/2006CN1856837A Selective bank refresh
11/01/2006CN1856836A Mram array with segmented magnetic write lines
11/01/2006CN1856835A Synchronous RAM memory circuit
11/01/2006CN1855568A Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
11/01/2006CN1855498A Electromechanical non-volatile random memory
11/01/2006CN1855434A Non-volatile memory, its production and operation
11/01/2006CN1855309A Program-verify method of non-volatile memory device
11/01/2006CN1855304A Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
11/01/2006CN1855303A Memory array circuit with two-bit memory cells
11/01/2006CN1855302A Data strobe synchronization for dram devices
11/01/2006CN1855301A Methods and apparatus for implementing standby mode in a random access memory
11/01/2006CN1855300A Redundancy circuit in semiconductor memory device
11/01/2006CN1855299A Random access memory including selective activation of select line
11/01/2006CN1855298A Internal voltage generator
11/01/2006CN1855297A Nonvolatile ferroelectric memory device including failed cell correcting circuit
11/01/2006CN1855296A Mram arrays and methods for writing and reading magnetic memory devices
11/01/2006CN1855293A 半导体存储器装置 The semiconductor memory device
11/01/2006CN1283010C Semiconductor storing device and semiconductor device
11/01/2006CN1283008C Semiconductor device
11/01/2006CN1283006C Magnetic storage device and mfg. method
11/01/2006CN1283005C Semiconductor memory device
10/2006
10/31/2006US7131039 Repair techniques for memory with multiple redundancy
10/31/2006US7131018 Electronic apparatus and power supplying method
10/31/2006US7130241 Semiconductor memory device having different synchronizing timings depending on the value of CAS latency
10/31/2006US7130232 Integrated circuit devices having multiple precharge circuits and methods of operating the same
10/31/2006US7130224 Composite storage circuit and semiconductor device having the same composite storage circuit
10/31/2006US7130223 Nonvolatile semiconductor memory device
10/31/2006US7130222 Nonvolatile memory with program while program verify
10/31/2006US7130221 Dual gate multi-bit semiconductor memory
10/31/2006US7130219 Electrically word-erasable non-volatile memory device, and biasing method thereof
10/31/2006US7130218 Nonvolatile memory with controlled voltage boosting speed
10/31/2006US7130217 Semiconductor storage device having page copying function
10/31/2006US7130216 One-device non-volatile random access memory cell
10/31/2006US7130215 Method and apparatus for operating a non-volatile memory device
10/31/2006US7130214 Low-current and high-speed phase-change memory devices and methods of driving the same
10/31/2006US7130213 Methods and apparatuses for a dual-polarity non-volatile memory cell
10/31/2006US7130212 Field effect device with a channel with a switchable conductivity
10/31/2006US7130211 Interleave control device using nonvolatile ferroelectric memory
10/31/2006US7130208 Ferroelectric-type nonvolatile semiconductor memory
10/31/2006US7130206 Content addressable memory cell including resistive memory elements
10/31/2006US7129925 Dynamic self-refresh display memory
10/31/2006US7129768 Fuse circuit
10/31/2006US7129555 Magnetic memory with write inhibit selection and the writing method for same
10/31/2006US7129549 Semiconductor integrated circuit device
10/31/2006US7128397 Ink distribution assembly for page width ink jet printhead
10/31/2006US7128386 Printer with capacitive printer cartridge data reader
10/31/2006US7128269 Compact display assembly
10/31/2006CA2302013C Integrated dram with high speed interleaving
10/26/2006WO2006113815A1 Static ram memory cell with dnr chalcogenide devices and method of forming
10/26/2006WO2006113093A2 Word line segment select transistor on word line current source side
10/26/2006WO2006112794A1 Interface for non-volatile memories
10/26/2006WO2006112793A1 Nonvolatile flash memory device and method for producing the same
10/26/2006WO2006112788A1 Metal layer intersection doping
10/26/2006WO2006112049A1 Magnetic random access memory
10/26/2006US20060242483 Built-in self-testing of multilevel signal interfaces
10/26/2006US20060240653 One-device non-volatile random access memory cell
10/26/2006US20060239106 Semiconductor memory
10/26/2006US20060239103 Semiconductor memory circuit
10/26/2006US20060239094 Semiconductor memory including self-timing circuit
10/26/2006US20060239082 Driver circuit
10/26/2006US20060239081 NAND flash memory with read and verification threshold uniformity
10/26/2006US20060239080 Method for Non-Volatile Memory with Managed Execution of Cached Data
10/26/2006US20060239079 Noise Reduction Technique for Transistors and Small Devices Utilizing an Episodic Agitation
10/26/2006US20060239077 NAND Flash Memory Device Having Dummy Memory cells and Methods of Operating Same
10/26/2006US20060239074 Using redundant memory for extra features
10/26/2006US20060239072 Nonvolatile memory device and semiconductor device
10/26/2006US20060239071 Semiconductor memory device and electronic equipment
10/26/2006US20060239069 Semiconductor integrated circuit device having nonvolatile semiconductor memory and programming method thereof
10/26/2006US20060239068 Static random access memory cell
10/26/2006US20060239067 Thin film magnetic memory device for writing data of a plurality of bits in parallel
10/26/2006US20060239066 Magnetic random access memory device
10/26/2006US20060239065 Magnetic memory device
10/26/2006US20060239064 Magnetic random access memory device
10/26/2006US20060239063 Sensor adjusting circuit
10/26/2006US20060239062 Static RAM memory cell with DNR chalcogenide devices and method of forming
10/26/2006US20060239061 Memory system and semiconductor integrated circuit
10/26/2006US20060239060 Semiconductor memory device and method for operating the same
10/26/2006US20060239055 DRAM stacked package, DIMM, and semiconductor manufacturing method
10/26/2006DE10332314B4 Halbleiterspeicher mit kurzer effektiver Wortleitungszykluszeit sowie Verfahren zum Lesen von Daten aus einem derartigen Halbleiterspeicher A semiconductor memory having a short effective word line cycle time and method for reading data from such a semiconductor memory
10/26/2006DE10259054B4 Spannungsgeneratoranordnung Voltage generator arrangement
10/26/2006DE10245538B4 Speicherzellenanordnung für einen DRAM-Speicher mit einem Kontaktbitanschluss für zwei Grabenkondensatoren verschiedener Reihen Memory cell array for a DRAM memory with a Kontaktbitanschluss grave for two capacitors of different rows
10/26/2006DE102004050927B4 Nichtflüchtiges Halbleiterspeicherbauelement The non-volatile semiconductor memory device
10/25/2006EP1715490A1 A non-volatile semiconductor memory
10/25/2006EP1714317A1 Ferroelectric thin films and devices comprising thin ferroelectric films
10/25/2006EP1714293A1 Charge packet metering for coarse /fine programming of non-volatile memory
10/25/2006EP1714291A2 Self-boosting system for flash memory cells
10/25/2006EP1714290A2 Efficient verification for coarse/fine programming of non-volatile memory
10/25/2006EP1714289A2 Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
10/25/2006EP1714288A2 Secured phase-change devices
10/25/2006EP1714287A1 Method and system for providing temperature dependent programming for magnetic memories
10/25/2006EP1423856B1 Non-volatile memory device
10/25/2006CN1853239A Detecting over programmed memory
10/25/2006CN1853238A Method and apparatus for implicit DRAM precharge
10/25/2006CN1853175A Memory buffer device integrating refresh
10/25/2006CN1851824A High speed streamline long-time-delay multi-port SRAM quick access method
10/25/2006CN1851823A Magnetic random access memory device
10/25/2006CN1851822A Magnetic random access memory device
10/25/2006CN1851821A Semiconductor memory and method for adjustment phase relation between clock signal and strobe signal
10/25/2006CN1282251C SNNNS non-volatile memory unit data writing-in and deleting method