| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
|---|
| 09/27/2007 | US20070223274 Complex Memory Chip |
| 09/27/2007 | US20070223272 Semiconductor memory device |
| 09/27/2007 | US20070223271 Semiconductor memory device and semiconductor device group |
| 09/27/2007 | US20070223270 High write selectivity and low power magnetic random access memory and method for fabricating the same |
| 09/27/2007 | US20070223269 Spin-injection magnetic random access memory |
| 09/27/2007 | US20070223268 Memory |
| 09/27/2007 | US20070223267 Arrangement and Method for Controlling a Micromechanical Element |
| 09/27/2007 | DE10233637B4 Systeme und Verfahren zum Bilden von Datenspeichervorrichtungen Systems and methods for forming data storage means |
| 09/27/2007 | DE102004011431B4 Verfahren zum Herstellen eines nicht flüchtigen Halbleiterspeichers A method of manufacturing a nonvolatile semiconductor memory |
| 09/26/2007 | EP1837906A2 Semiconductor memory device and methods of manufacturing and operating the same |
| 09/26/2007 | EP1836770A1 Non-volatile reconfigurable digital logic unit |
| 09/26/2007 | CN101043214A Deplay circuit and delay synchronization loop device |
| 09/26/2007 | CN101043067A Method for fabricating a pillar-shaped phase change memory element |
| 09/26/2007 | CN101042933A Non-volatilization SRAM with metallic oxide as storage medium and uses thereof |
| 09/26/2007 | CN101042932A 半导体存储器件 A semiconductor memory device |
| 09/26/2007 | CN101042931A Semiconductor storage device |
| 09/26/2007 | CN101042930A Control circuit of power supply unit, power supply unit and control method thereof |
| 09/26/2007 | CN101042929A Off chip DRAM data sampling method with configurable sample-taking point |
| 09/26/2007 | CN101042927A Semiconductor memory device |
| 09/26/2007 | CN101042926A Memory control method, memory device and memory controller |
| 09/26/2007 | CN100340010C Memory cell with an asymmetrical area |
| 09/26/2007 | CN100340001C Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND |
| 09/26/2007 | CN100339996C Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, |
| 09/26/2007 | CN100339916C Amorphous alloys for magnetic devices |
| 09/26/2007 | CN100339910C Static semiconductor memory device and method of controlling the same |
| 09/26/2007 | CN100339799C Data storage apparatus and control method thereof |
| 09/25/2007 | US7275173 Method for measuring and compensating for skews of data transmission lines by compensating for skew by delay elements switched in response to the calculated reative skew |
| 09/25/2007 | US7275130 Method and system for dynamically operating memory in a power-saving error correcting mode |
| 09/25/2007 | US7275128 Selectable block protection for non-volatile memory |
| 09/25/2007 | US7274618 Word line driver for DRAM embedded in a logic process |
| 09/25/2007 | US7274613 Dynamic random access memory (DRAM) capable of canceling out complementary noise development in plate electrodes of memory cell capacitors |
| 09/25/2007 | US7274598 Nonvolatile integrated circuit memory devices having staged application of program voltages and methods for programming the same |
| 09/25/2007 | US7274597 Method of programming of a non-volatile memory cell comprising steps of applying constant voltage and then constant current |
| 09/25/2007 | US7274595 Nonvolatile memory device for storing data and method for erasing or programming the same |
| 09/25/2007 | US7274591 Write current shunting compensation |
| 09/25/2007 | US7274590 Random access memory with stability enhancement and early read elimination |
| 09/25/2007 | US7274589 Semiconductor storage device |
| 09/25/2007 | US7274588 Compact and highly efficient DRAM cell |
| 09/25/2007 | US7274587 Semiconductor memory element and semiconductor memory device |
| 09/25/2007 | US7274586 Method for programming phase-change memory array to set state and circuit of a phase-change memory device |
| 09/25/2007 | US7274582 High speed data bus |
| 09/25/2007 | US7274248 Booster circuit and semiconductor device having same |
| 09/25/2007 | US7274208 Nanoscale wire-based sublithographic programmable logic arrays |
| 09/25/2007 | US7274078 Devices having vertically-disposed nanofabric articles and methods of making the same |
| 09/25/2007 | US7274034 Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
| 09/20/2007 | WO2007106635A2 Switch device and method |
| 09/20/2007 | WO2007105255A1 Decoder circuit |
| 09/20/2007 | WO2007076451A3 Body effect sensing method for non-volatile memories |
| 09/20/2007 | US20070220247 System boot using nand flash memory and method thereof |
| 09/20/2007 | US20070217279 Memory having storage means |
| 09/20/2007 | US20070217270 Synchronous semiconductor memory device having on-die termination circuit and on-die termination method |
| 09/20/2007 | US20070217267 Method of operating flash memory cell |
| 09/20/2007 | US20070217259 Tracking cells for a memory system |
| 09/20/2007 | US20070217258 Bit symbol recognition method and structure for multiple bit storage in non-volatile memories |
| 09/20/2007 | US20070217256 Magnetic recording element |
| 09/20/2007 | US20070217255 Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit |
| 09/20/2007 | US20070217254 Semiconductor Memory |
| 09/20/2007 | US20070217253 Non-volatile phase-change memory device and associated program-suspend-read operation |
| 09/20/2007 | US20070217252 Memory cell, memory with a memory cell, and method for writing data in a memory cell |
| 09/20/2007 | US20070217251 Fuse cell having adjustable sensing margin |
| 09/20/2007 | US20070217250 Memory device |
| 09/20/2007 | US20070217249 Semiconductor memory |
| 09/20/2007 | US20070215977 Resistance random access memory device and a method of manufacturing the same |
| 09/20/2007 | DE19758791B4 FRAM semiconductor memory for computer - has memory cells contg. transistor, ferro-electric capacitor between source and drain, series-connected storage cells and selection transistor |
| 09/20/2007 | DE112004000658T5 Verfahren zum Programmieren einer Doppelzellenspeichereinrichtung zur Speicherung von Mehrfach-Datenzuständen pro Zelle A method of programming a dual cell memory device for storing multiple data states per cell |
| 09/20/2007 | DE10314308B4 Chipintegrierte Abschlussvorrichtung und Halbleiterbaustein sowie zugehöriges Steuerverfahren Integrated chip termination device and semiconductor device and associated control method |
| 09/20/2007 | DE102007005709A1 Takt- und Datenrückgewinnungsschaltung mit Verstärkungsregelung Clock and data recovery circuit with automatic gain control |
| 09/19/2007 | EP1835344A1 Silicon-containing photosensitive composition, method for forming thin film pattern using same, protective film for electronic device, gate insulating film and thin film transistor |
| 09/19/2007 | EP1834336A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device |
| 09/19/2007 | EP1668671A4 Apparatus and method for selectively configuring a memory device using a bi-stable relay |
| 09/19/2007 | EP1434232B1 Memory cell |
| 09/19/2007 | EP1245029A4 Spin dependent tunneling memory |
| 09/19/2007 | CN101038951A Manufacturing method for pipe-shaped electrode phase change memory |
| 09/19/2007 | CN101038789A Non-volatile phase-change memory device and associated program-suspend-read operation |
| 09/19/2007 | CN101038788A Semiconductor integrated circuit and leak current reducing mehthod |
| 09/19/2007 | CN101038787A Static random access memory device haivng a high-bandwidth and occupying a small area |
| 09/19/2007 | CN101038786A Semiconductor device including internal voltage generation circuit |
| 09/19/2007 | CN101038785A A high speed dram architecture with uniform access latency |
| 09/19/2007 | CN101038784A Magnetic memory cell structure and magnetic memory device |
| 09/19/2007 | CN101038783A Semiconductor memory, memory system, and operation method of memory system |
| 09/19/2007 | CN100338777C Magnetic storage device using ferromagnetic tunnel junction element |
| 09/19/2007 | CN100338776C 铁电门器件 Rail switches devices |
| 09/19/2007 | CN100338775C Nonvolatile semiconductor memory for storage multiple-valued data in single storage unit |
| 09/19/2007 | CN100338774C 半导体存储器 Semiconductor memory |
| 09/19/2007 | CN100338700C Method of forming mram devices |
| 09/19/2007 | CN100338686C Nonvolatile semiconductor memory with raised probability of redundant remedy |
| 09/19/2007 | CN100338685C Semiconductor storing device and method for writing data |
| 09/19/2007 | CN100338684C Semiconductor device for use in two systems with different power voltages |
| 09/19/2007 | CN100338683C MRAM bit line word line architecture |
| 09/19/2007 | CN100338682C Non-volatile memory and semi-conductor integrated circuit device |
| 09/19/2007 | CN100338681C Thin film magnetic memory device having redundant configuration |
| 09/19/2007 | CN100338557C Phase controlled high speed interfaces |
| 09/18/2007 | US7272068 Semiconductor device |
| 09/18/2007 | US7272065 Compensated refresh oscillator |
| 09/18/2007 | US7272064 Thin film magnetic memory device for writing data of a plurality of bits in parallel |
| 09/18/2007 | US7272053 Integrated circuit having a non-volatile memory with discharge rate control and method therefor |
| 09/18/2007 | US7272050 Non-volatile memory device and erase method of the same |
| 09/18/2007 | US7272048 Nonvolatile memory device controlling common source line for improving read characteristic |
| 09/18/2007 | US7272047 Wordline voltage generating circuit including a voltage dividing circuit for reducing effects of parasitic capacitance |
| 09/18/2007 | US7272045 Method for programming and erasing an NROM cell |