Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2007
08/30/2007US20070201292 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
08/30/2007US20070201288 Semiconductor memory device which compensates for delay time variations of multi-bit data
08/30/2007US20070201278 Method for programming memory cells including transconductance degradation detection
08/30/2007US20070201277 NOR flash memory device with a serial sensing operation and method of sensing data bits in a NOR flash memory device
08/30/2007US20070201276 Dual-gate, non-volatile memory cells, arrays thereof, methods of manufacturing the same and methods of operating the same
08/30/2007US20070201274 Cell-Downgrading and Reference-Voltage Adjustment for a Multi-Bit-Cell Flash Memory
08/30/2007US20070201269 Method and Apparatus for Protection from Over-Erasing Nonvolatile Memory Cells
08/30/2007US20070201268 Spin Based Magnetic Sensor
08/30/2007US20070201267 Sense circuit for resistive memory
08/30/2007US20070201266 High-bandwidth magnetoresistive random access memory devices
08/30/2007US20070201265 High capacity low cost multi-state magnetic memory
08/30/2007US20070201264 Magnetic memory devices
08/30/2007US20070201263 Semiconductor memory device
08/30/2007US20070201262 Logic SRAM cell with improved stability
08/30/2007US20070201261 Independent-gate controlled asymmetrical memory cell and memory using the cell
08/30/2007US20070201260 Memory device with hierarchy bit line
08/30/2007US20070201168 Magnetization Direction Control Method And Application Thereof To Mram
08/30/2007US20070200891 Printer cartridge with capping seal surrounding orofice surface
08/30/2007US20070200861 Display Device and Display System Using the Same
08/30/2007US20070200611 DRAM boosted voltage supply
08/30/2007US20070200155 Method of fabricating an integrated electronic circuit with programmable resistance cells
08/30/2007DE10302650B4 RAM-Speicher und Steuerungsverfahren dafür RAM memory and control method therefor
08/30/2007DE102006029703A1 Dynamischer Halbleiterspeicher mit verbessertem Wiederauffrischungsmechanismus Dynamic semiconductor memory with an improved refresh mechanism
08/30/2007DE102006008491A1 Programmable structure for e.g. flash memory, has unit sending electromagnetic radiation to ion conducting layer, and detection unit receiving radiation from layer, which changes its characteristics, when bias voltage is applied to layer
08/30/2007DE102006008399A1 Memory module for avoiding unsteady power supply, has independent adjustable current supply with rectifier circuit, present in printed circuit board, where module is monitored and current supply is separated from main board of computer
08/30/2007CA2643280A1 Method of reducing electro-static discharge (esd) from conductors on insulators
08/29/2007EP1826774A1 Magnetic memory device using magnetic domain motion
08/29/2007EP1826773A1 Magnetic memory device using magnetic domain motion
08/29/2007EP1826772A1 Magnetic memory device and method of writing data into magnetic memory device
08/29/2007EP1826771A1 Magnetic memory device using magnetic domain dragging
08/29/2007EP1826770A1 Magnetic tunneling junction cell based xor logic circuit and method of opearting the same
08/29/2007EP1825478A1 Semiconductor device and method for manufacturing the same
08/29/2007EP1825477A1 Spin-electronics device
08/29/2007EP1825476A1 Memory sensing circuit and method for low voltage operation
08/29/2007EP1474832A4 Method and system for molecular charge storage field effect transistor
08/29/2007EP1474749B1 Method and apparatus for supplementary command bus in a computer system
08/29/2007CN101027842A Encoding of data words using three or more level levels
08/29/2007CN101026223A I type phase change storage unit with heat insulation structure
08/29/2007CN101026177A Nonvolatile memory device and its operating method
08/29/2007CN101026176A Magnetic memory device and data writing method for the same
08/29/2007CN101026158A 半导体装置 Semiconductor device
08/29/2007CN101026006A Latency control circuit and method thereof and an auto-precharge control circuit and method thereof
08/29/2007CN101026005A 半导体存储器件 A semiconductor memory device
08/29/2007CN101026004A Semiconductor memory device including memory cell without capacitor
08/29/2007CN101026003A Dynamic semiconductor memory with improved refresh mechanism
08/29/2007CN101026002A Magnetic memory device using magnetic domain motion
08/29/2007CN101026001A Magnetic memory device using magnetic domain motion
08/29/2007CN101026000A Magnetic memory devices using magnetic domain motion
08/29/2007CN101025999A Magnetic memory devices using magnetic domain dragging
08/29/2007CN100334734C Semiconductor storage unit and semiconductor memory
08/29/2007CN100334724C 半导体集成电路器件 The semiconductor integrated circuit device
08/29/2007CN100334652C Stable semiconductor storage device with pseudo storage unit
08/29/2007CN100334651C Static random access memory with single terminal inductive amplifier
08/28/2007USRE39799 Memory cell array and method for manufacturing it
08/28/2007US7263633 Integrated circuit, in particular integrated memory, and methods for operating an integrated circuit
08/28/2007US7263455 Apparatus and methods for ferroelectric ram fatigue testing
08/28/2007US7263023 Semiconductor memory device having memory architecture supporting hyper-threading operation in host system
08/28/2007US7263018 Compensating a long read time of a memory device in data comparison and write operations
08/28/2007US7263017 AC sensing for a resistive memory
08/28/2007US7263014 Semiconductor memory device having N-bit prefetch type and method of transferring data thereof
08/28/2007US7263013 Synchronous memory device capable of controlling write recovery time
08/28/2007US7263004 Method and apparatus for determining sensing timing of flash memory
08/28/2007US7263003 Two-transistor flash memory device using replica cell array to control the precharge/discharge and sense amplifier circuits of the primary cell array
08/28/2007US7263002 Nonvolatile semiconductor memory device that achieves speedup in read operation
08/28/2007US7263001 Compact non-volatile memory cell and array system
08/28/2007US7263000 NAND type memory with dummy cells adjacent to select transistors being biased at different voltage during data erase
08/28/2007US7262997 Process for operating an electronic device including a memory array and conductive lines
08/28/2007US7262994 System for reducing read disturb for non-volatile storage
08/28/2007US7262992 Hearing aid
08/28/2007US7262991 Nanotube- and nanocrystal-based non-volatile memory
08/28/2007US7262990 Semiconductor memory device
08/28/2007US7262989 Magnetic memory device having flux focusing layer therein
08/28/2007US7262988 Memory device and semiconductor device
08/28/2007US7262987 SRAM cell using tunnel current loading devices
08/28/2007US7262986 Memory system and semiconductor integrated circuit
08/28/2007US7262985 Memory
08/28/2007US7262984 Method and apparatus for storing and reading information in a ferroelectric material
08/28/2007US7262983 Semiconductor memory
08/28/2007US7262638 Current sense amplifier
08/28/2007US7262474 Magnetic memory device and method of manufacturing the same
08/28/2007US7262458 Semiconductor memory device and portable electronic apparatus
08/28/2007US7262449 MTJ element for magnetic random access memory
08/28/2007US7262064 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
08/28/2007US7261392 Printhead chip that incorporates pivotal micro-mechanical ink ejecting mechanisms
08/23/2007WO2007095217A1 Single latch data circuit in a multiple level cell non-volatile memory device
08/23/2007WO2007094133A1 Arithmetic processing circuit using ferroelectric capacitor and arithmetic method
08/23/2007WO2001046988A3 Method and apparatus for routing 1 of n signals
08/23/2007US20070198868 Memory System Having Delayed Write Timing
08/23/2007US20070196933 Method for production of MRAM elements
08/23/2007US20070196696 Thin film memory device having a variable resistance
08/23/2007US20070195632 Semiconductor memory device having a global data bus
08/23/2007US20070195628 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
08/23/2007US20070195622 Semiconductor memory device with redundancy circuit
08/23/2007US20070195621 Method and apparatus for increasing yield in a memory circuit
08/23/2007US20070195609 Non-volatile memory device and method of operation therefor
08/23/2007US20070195607 Nrom non-volatile memory and mode of operation
08/23/2007US20070195606 Nonvolatile semiconductor memory device and method of rewriting data thereof
08/23/2007US20070195605 Row selector with reduced area occupation for semiconductor memory devices
08/23/2007US20070195604 Circuit for controlling driver of semiconductor memory apparatus and method of controlling the same
08/23/2007US20070195603 Minimizing effects of program disturb in a memory device
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