Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2010
04/01/2010US20100078620 Semiconductor device with thermally coupled phase change layers
04/01/2010DE102004034760B4 Auffrischsteuerverfahren, Speichersteuerschaltung und Chipprodukt Auffrischsteuerverfahren, memory controller and chip product
04/01/2010DE102004011732B4 Integrierter Speicherbaustein mit Verzögerungsregelkreis Integrated memory device with delay locked loop
03/2010
03/31/2010EP2169684A1 Non-volatile memory and method with power-saving read and program-verify operations
03/31/2010EP2169558A1 Memory refresh device and memory refresh method
03/31/2010EP2168128A1 Memory device with delay tracking for improved timing margin
03/31/2010CN201435675Y Wind energy current transformer with movable storage equipment
03/31/2010CN201435223Y Dynamic link flash memory
03/31/2010CN101689858A Semiconductor device
03/31/2010CN101689400A Dynamic verify based on threshold voltage distribution
03/31/2010CN101689399A Static memory devices
03/31/2010CN101689398A Method of driving a semiconductor memory device and a semiconductor memory device
03/31/2010CN101689397A Non-volatile memory with high reliability
03/31/2010CN101686051A Apparatus and method for testing setup/hold time
03/31/2010CN101686041A Gated clock circuit and gated clock signal generation method
03/31/2010CN101685828A Semiconductor memory device
03/31/2010CN101685826A Memory array with diode driver and method for fabricating the same
03/31/2010CN101685825A Integrated circuit including diode memory cells
03/31/2010CN101685668A Low leakage SRAM memory cell structure
03/31/2010CN101685667A Sram cell
03/31/2010CN101685666A Clock control of state storage circuitry
03/30/2010US7688670 Semiconductor device with improved power supply control for a plurality of memory arrays
03/30/2010US7688662 Method for hiding a refresh in a pseudo-static memory
03/30/2010US7688661 Semiconductor memory device, and method of controlling the same
03/30/2010US7688654 Structure for differential eFUSE sensing without reference fuses
03/30/2010US7688642 Non-volatile memory device and method for programming/erasing the same
03/30/2010US7688641 Method of depressing read disturbance in flash memory device
03/30/2010US7688637 Memory self-test circuit, semiconductor device and IC card including the same, and memory self-test method
03/30/2010US7688634 Method of operating an integrated circuit having at least one memory cell
03/30/2010US7688631 Flash memory device for variably controlling program voltage and method of programming the same
03/30/2010US7688626 Depletion mode bandgap engineered memory
03/30/2010US7688624 Semiconductor device
03/30/2010US7688623 Magnetic memory cell and magnetic memory device
03/30/2010US7688622 Phase change memory device with dummy cell array
03/30/2010US7688621 Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory
03/30/2010US7688620 Nonvolatile memory device and related methods of operation
03/30/2010US7688619 Phase change memory cell and manufacturing method
03/30/2010US7688618 Integrated circuit having memory having a step-like programming characteristic
03/30/2010US7688617 MRAM and operation method of the same
03/30/2010US7688616 Device and method of programming a magnetic memory element
03/30/2010US7688615 Magnetic random access memory, manufacturing method and programming method thereof
03/30/2010US7688614 Nonvolatile semiconductor memory device
03/30/2010US7688129 System and method for open-loop synthesis of output clock signals having a selected phase relative to an input clock signal
03/30/2010US7687848 Memory utilizing oxide-conductor nanolaminates
03/25/2010WO2010033409A1 Data state-based temperature compensation during sensing in non-volatile memory
03/25/2010WO2010033316A1 Integrated circuit having boosted array voltage and method therefor
03/25/2010WO2009154906A3 Apparatus and method for multi-phase clock generation
03/25/2010US20100074003 Single conductor magnetoresistance random access memory cell
03/25/2010US20100074002 Tri-state memory device and method
03/25/2010US20100074001 Information recording/reproducing device
03/25/2010US20100074000 Analog Access Circuit for Validating Chalcogenide Memory Cells
03/25/2010US20100073999 Semiconductor integrated circuit
03/25/2010US20100073998 Data writing method for magnetoresistive effect element and magnetic memory
03/25/2010US20100073997 Piezo-driven non-volatile memory cell with hysteretic resistance
03/25/2010US20100073996 Semiconductor device
03/25/2010US20100073995 Nano -electronic array
03/25/2010US20100073994 Leakage compensation circuit for dynamic random access memory (dram) cells
03/25/2010US20100073993 Multi-resistive integrated circuit memory
03/25/2010US20100073992 Semiconductor memory device
03/25/2010US20100073991 Storage apparatus
03/25/2010US20100073990 Contemporaneous margin verification and memory access fr memory cells in cross point memory arrays
03/25/2010US20100073989 Nonvolatile ferroelectric memory device using silicon substrate, method for manufacturing the same, and refresh method thereof
03/25/2010US20100073988 Nonvolatile semiconductor storage device
03/25/2010US20100073987 Semiconductor memory device and driving method of semiconductor memory device
03/25/2010US20100073986 Semiconductor memory device
03/25/2010US20100073983 Nonvolatile semiconductor memory device and writing method of the same
03/25/2010US20100073982 Semiconductor device and method for designing the same
03/25/2010US20100073431 Nozzle Structure With Reciprocating Cantilevered Thermal Actuator
03/25/2010US20100073428 Printing Integrated Circuit Having Piston Ejection
03/25/2010US20100073427 Printhead micro-electromechanical nozzle arrangement with motion-transmitting structure
03/25/2010US20100073426 Printhead with nozzles having individual supply passages extending into substrate
03/25/2010US20100073031 Nanotube-based switching elements with multiple controls and logic circuits having said elements
03/25/2010DE102009035926A1 Kompakte Speicherarrays Compact storage arrays
03/25/2010DE102004040962B4 Schaltung und Verfahren zur Kompensation eines Signalversatzes und zugehöriger Speicherbaustein Circuit and method for compensating for a signal offset and the associated memory module
03/25/2010DE10065477B4 Automatisches Vorladegerät einer Halbleiter-Speicheranordnung Auto precharge a semiconductor memory device
03/24/2010EP2166540A1 Semiconductor memory
03/24/2010EP2165369A1 Anti-fuse memory cell
03/24/2010EP2165338A1 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
03/24/2010EP2165333A1 Method and circuit for controlling the refresh rate of sampled reference voltages
03/24/2010CN201429989Y USB flash disk with precise ceramic outer casing
03/24/2010CN201429855Y Memory device with double interfaces
03/24/2010CN101681679A Non-volatile multilevel memory cells with data read of reference cells
03/24/2010CN101681678A Delta sigma sense amplifier comprising digital filters and memory
03/24/2010CN101681676A Phase change memory structure with multiple resistance states and methods of programming and sensing same
03/24/2010CN101681675A Bitcell with variable-conductance transfer gate and method thereof
03/24/2010CN101681674A Memory device with delay tracking for improved timing margin
03/24/2010CN101681671A Method and apparatus for reducing leakage current in memory arrays
03/24/2010CN101681668A Division-based sensing and partitioning of electronic memory
03/24/2010CN101681666A Sensing device for floating body cell memory and method thereof
03/24/2010CN101677081A Phase change memory cell array with self-converged bottom electrode and method for manufacturing
03/24/2010CN101677080A Memory cell array manufacture method and memory device
03/24/2010CN101677017A Operation method of non-volatile memory cells in a memory array
03/24/2010CN101677016A Dual-port static random access memory unit
03/24/2010CN101677015A Static random access memory and forming and controlling method thereof
03/24/2010CN101677014A Alloy electrode material for resistor type random access memory and preparation technology thereof
03/24/2010CN100595930C Electrically rewritable non-volatile memory element
03/24/2010CN100595845C Circuit and method for controlling active cycle of semiconductor memory
03/24/2010CN100595844C Semiconductor memory device
03/24/2010CN100595843C Memory
03/23/2010US7685455 Semiconductor integrated circuit which generates internal clock signal for fetching input data synchronously with the internal clock signal without decrease of timing margin