Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2010
05/06/2010US20100110790 Semiconductor memory device
05/06/2010US20100110785 Memory Cell With Proportional Current Self-Reference Sensing
05/06/2010US20100110784 STRAM with Self-Reference Read Scheme
05/06/2010US20100110783 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
05/06/2010US20100110782 Page Mode Access for Non-volatile Memory Arrays
05/06/2010US20100110781 Phase change memory device generating program current and method thereof
05/06/2010US20100110780 Programmable resistance memory
05/06/2010US20100110779 Multilevel phase change memory operation
05/06/2010US20100110778 Phase change memory program method without over-reset
05/06/2010US20100110777 Magnetic random access memory
05/06/2010US20100110776 Data Protection Scheme during Power-Up in Spin Transfer Torque Magnetoresistive Random Access Memory
05/06/2010US20100110775 Word Line Voltage Control in STT-MRAM
05/06/2010US20100110774 Sram device
05/06/2010US20100110773 Sram cell without dedicated access transistors
05/06/2010US20100110772 Semiconductor memory device having bit line disturbance preventing unit
05/06/2010US20100110771 Variable resistive memory
05/06/2010US20100110770 Variable Resistance Memory Devices Including Arrays of Different Sizes
05/06/2010US20100110769 Controlling a variable resistive memory wordline switch
05/06/2010US20100110768 Resistance variable memory device and system
05/06/2010US20100110767 Resistance variable memory apparatus
05/06/2010US20100110766 Nonvolatile memory apparatus and method for writing data in nonvolatile memory apparatus
05/06/2010US20100110765 Non-Volatile Memory Cell with Programmable Unipolar Switching Element
05/06/2010US20100110764 Programmable metallization cell switch and memory units containing the same
05/06/2010US20100110763 Write Current Compensation Using Word Line Boosting Circuitry
05/06/2010US20100110762 Write method with voltage line tuning
05/06/2010US20100110761 Spatial Correlation of Reference Cells in Resistive Memory Array
05/06/2010US20100110760 Resistive Sense Memory Calibration for Self-Reference Read Method
05/06/2010US20100110759 Programmable resistive memory cell with filament placement structure
05/06/2010US20100110758 Structures for resistive random access memory cells
05/06/2010US20100110757 Resistive memory
05/06/2010US20100110756 Variable resistive memory punchthrough access method
05/06/2010US20100110755 Ferroelectric random access memory device
05/06/2010US20100110754 Non-destructive read back for ferroelectric data storage device
05/06/2010US20100110753 Ferroelectric Memory Cell Arrays and Method of Operating the Same
05/06/2010US20100110751 Semiconductor storage device
05/06/2010US20100110746 Memory cell with alignment structure
05/06/2010US20100110744 Ternary content addressable magnetoresistive random access memory cell
05/05/2010EP1536474B1 Memory device and storage apparatus
05/05/2010EP1442355B1 Dram power management
05/05/2010CN1906697B Method for operating a data storage apparatus employing passive matrix addressing
05/05/2010CN1871662B Silver selenide film stoichiometry and morphology control in sputter deposition
05/05/2010CN1853238B Method and apparatus for implicit DRAM precharge
05/05/2010CN1790543B Method for generating magnetic RAM reference signal
05/05/2010CN1783333B Magnetic random storage element
05/05/2010CN1771565B Semiconductor memory and operation method of semiconductor memory
05/05/2010CN1734668B Multi-port memory based on dram core
05/05/2010CN1725369B Storage mode and circuit using ratio as station guide
05/05/2010CN1628357B Method for reading structural phase-Change memory
05/05/2010CN1577606B Sense amplifier driver and semiconductor device comprising the same
05/05/2010CN1538459B Semiconductor storage device
05/05/2010CN1527484B Integrated circuit memory device and method for controlling delay locking ring circuit
05/05/2010CN1525486B Thin film magnetic memory device suppressing influence of magnetic field noise from power supply wiring
05/05/2010CN1521760B Film magnetic memory device having programmed element
05/05/2010CN1343987B Semiconductor memory device and memory modulus and system adopting same
05/05/2010CN101084556B Non-volatile memory and method with improved sensing
05/05/2010CN101036195B Spin-transfer based MRAM using angular-dependent selectivity
05/04/2010US7712147 Method and device for protection of an mram device against tampering
05/04/2010US7711976 Data processing system and image processing system
05/04/2010US7711896 Storage system that is connected to external storage
05/04/2010US7710815 Access unit for a static random access memory
05/04/2010US7710799 Circuit for generating data strobe in DDR memory device, and method therefor
05/04/2010US7710788 Flash memory device and method of testing a flash memory device
05/04/2010US7710785 Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
05/04/2010US7710784 Method of reading the bits of nitride read-only memory cell
05/04/2010US7710783 Methods for operating a nonvolatile memory and related circuit
05/04/2010US7710782 Sense amplifier and data sensing method thereof
05/04/2010US7710778 NAND flash memory with reduced programming disturbance
05/04/2010US7710773 Nonvolatile memory devices that support virtual page storage using odd-state memory cells
05/04/2010US7710772 Method of managing a multilevel memory device and related device
05/04/2010US7710771 Method and apparatus for capacitorless double-gate storage
05/04/2010US7710770 Data storage device and method
05/04/2010US7710769 Data storage device and method
05/04/2010US7710768 Electromechanical memory, electric circuit using the same, and method of driving electromechanical memory
05/04/2010US7710767 Memory cell array biasing method and a semiconductor memory device
05/04/2010US7710766 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
05/04/2010US7710765 Back gated SRAM cell
05/04/2010US7710764 Semiconductor memory cells with shared p-type well
05/04/2010US7710763 SRAM cell using separate read and write circuitry
05/04/2010US7710762 Device for protecting SRAM data
05/04/2010US7710761 CMOS SRAM/ROM unified bit cell
05/04/2010US7710760 Method and apparatus for charging large capacitances
05/04/2010US7710759 Nonvolatile ferroelectric memory device
05/04/2010US7710157 Nanotube-based switching elements with multiple controls and logic circuits having said elements
05/04/2010US7709314 Semiconductor switching devices and fabrication methods
05/04/2010US7708381 Fluid ejection device with resistive element close to drive circuits
04/2010
04/29/2010WO2010048245A1 Read assist for memory circuits
04/29/2010WO2010047328A1 Semiconductor memory device
04/29/2010WO2010047276A1 Magnetoresistance element, mram, and magnetoresistance element initialization method
04/29/2010WO2010046800A1 Dual-rail sram with independent read and write ports
04/29/2010US20100103756 Semiconductor memory device
04/29/2010US20100103745 Nand Flash Memory With a Programming Voltage Held Dynamically in a Nand Chain Channel Region
04/29/2010US20100103744 Non-volatile memory device and method of driving the same
04/29/2010US20100103730 Magnetic memory cell
04/29/2010US20100103729 Spin-transfer torque memory self-reference read and write assist methods
04/29/2010US20100103728 Spin-transfer torque memory self-reference read and write assist methods
04/29/2010US20100103727 St-ram employing a magnetic resonant tunneling diode as a spacer layer
04/29/2010US20100103726 Phase change memory devices and systems, and related programming methods
04/29/2010US20100103725 Resistance Variable Memory Device for Protecting Coupling Noise
04/29/2010US20100103724 Variable Resistance memory device
04/29/2010US20100103723 Nonvolatile memory apparatus