Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2010
04/13/2010US7697315 Memory system and semiconductor integrated circuit
04/13/2010US7695108 Fluid-ejecting integrated circuit utilizing electromagnetic displacement
04/08/2010WO2010039874A1 Method and apparatus for soft data generation for memory devices using decoder performance feedback
04/08/2010WO2010039869A1 Methods and apparatus for soft data generation for memory devices using reference cells
04/08/2010WO2010039866A1 Methods and apparatus for soft data generation for memory devices
04/08/2010WO2010039859A1 Methods and apparatus for soft data generation for memory devices based on performance factor adjustment
04/08/2010WO2010039625A2 Common memory device for variable device width and scalable pre-fetch and page size
04/08/2010WO2010039424A1 Unidirectional spin torque transfer magnetic memory cell structure
04/08/2010WO2010039423A1 Spin current generator for stt-mram or other spintronics applications
04/08/2010WO2010039422A1 Stt-mram cell structure incorporating piezoelectric stress material
04/08/2010WO2010038823A1 Screening method employed in magnetoresistive storage device, and magnetoresistive storage device
04/08/2010WO2010038581A1 Semiconductor device
04/08/2010WO2010038565A1 Magnetic random access memory and method for operating magnetic random access memory
04/08/2010WO2010037815A2 Optimizing sram performance over extended voltage or process range using self-timed calibration of local clock generator
04/08/2010US20100088483 Detection circuit for mixed asynchronous and synchronous memory operation
04/08/2010US20100085821 Operation method of non-volatile memory
04/08/2010US20100085810 Method of controlling memory system
04/08/2010US20100085808 Read method for mlc
04/08/2010US20100085806 Techniques for reducing a voltage swing
04/08/2010US20100085805 Magnetic random access memory (mram) utilizing magnetic flip-flop structures
04/08/2010US20100085804 Semiconductor memory device and data processing system including the same
04/08/2010US20100085803 Electronic devices utilizing spin torque transfer to flip magnetic orientation
04/08/2010US20100085802 Multi-State Latches From n-State Reversible Inverters
04/08/2010US20100085800 Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes
04/08/2010US20100085799 Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device
04/08/2010US20100085798 Silicon-based nanoscale resistive device with adjustable resistance
04/08/2010US20100085797 Dual stage sensing for non-volatile memory
04/08/2010US20100085796 Enhancing Read and Write Sense Margins in a Resistive Sense Element
04/08/2010US20100085795 Asymmetric Write Current Compensation
04/08/2010US20100085794 Set and reset detection circuits for reversible resistance switching memory material
04/08/2010US20100085792 Semiconductor Device
04/08/2010US20100085402 Printhead Integrated Circuit With A Solenoid Piston
04/08/2010DE10217290B4 Verfahren zum Schreiben in einen RAM mit Spaltenlöschung Method of writing into RAM columns deletion
04/08/2010DE102008050055A1 Method for refresh-control of storage arrangement e.g. computer system, involves activating parts such as pumps, of storage arrangement, and deactivating parts of storage arrangement required for self-refresh signal
04/08/2010DE102006043456B4 Verfahren zum Auffrischen des Inhalts einer Speicherzelle einer Speicheranordnung sowie entsprechende Speicheranordnung Method to refresh the contents of a memory cell of a memory array and corresponding memory array
04/08/2010DE102006028483B4 Verfahren zum Zugreifen auf einen Speicher A method for accessing a memory
04/08/2010DE102004040484B4 Auswählen eines Schreibstroms einer magnetischen Speicherzelle Selecting a write current to a magnetic memory cell
04/08/2010DE102004022355B4 Halbleiterbaustein mit bidirektionalem Eingabe-/Ausgabeanschluss und zugehöriges Verfahren zum Ein- und Ausgeben von Daten Semiconductor device with bidirectional input / output port and associated method for inputting and outputting data
04/07/2010EP2171844A1 Dynamic impedance control for input/output buffers
04/07/2010EP2171720A1 Analog sensing of memory cells in a solid-state memory device
04/07/2010CN101692348A Monopole programmed resistance memory and storage operation method therefor
04/07/2010CN101692347A Memory chip on imaging box of imaging device
04/06/2010US7693002 Dynamic word line drivers and decoders for memory arrays
04/06/2010US7693000 Semiconductor device
04/06/2010US7692973 Semiconductor device
04/06/2010US7692971 Non-volatile multilevel memory cell programming
04/06/2010US7692970 Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
04/06/2010US7692968 Operation method of non-volatile memory and method of improving coupling interference from nitride-based memory
04/06/2010US7692967 Method of programming a nonvolatile memory device using hybrid local boosting
04/06/2010US7692966 Nonvolatile semiconductor memory device having assist gate
04/06/2010US7692964 Source-biased SRAM cell with reduced memory cell leakage
04/06/2010US7692963 Semiconductor memory device
04/06/2010US7692959 Multilayer storage class memory using externally heated phase change material
04/06/2010US7692958 Method for reading phase change memories and phase change memory
04/06/2010US7692957 Phase change memory device with ensured sensing margin and method of manufacturing the same
04/06/2010US7692956 Magnetic random access memory
04/06/2010US7692955 Semiconductor integrated circuit
04/06/2010US7692954 Apparatus and method for integrating nonvolatile memory capability within SRAM devices
04/06/2010US7692951 Resistance change memory device with a variable resistance element formed of a first and a second composite compound
04/06/2010US7692950 Semiconductor memory device
04/06/2010US7692949 Multi-bit resistive memory
04/06/2010US7692948 Semiconductor memory device
04/06/2010US7692947 Nonvolatile ferroelectric memory and control device using the same
04/06/2010US7692943 Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells
04/06/2010US7692902 Tunnel magnetoresistance effect device, and a portable personal device
04/06/2010US7692234 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
04/06/2010US7692216 Thin film transistor array panel for a liquid crystal display
04/06/2010US7690765 Central processor for a camera with printing capabilities
04/01/2010WO2010037090A2 Flux-closed stram with electronically reflective insulative spacer
04/01/2010WO2010037075A1 Stram with compensation element
04/01/2010WO2010037048A1 Stram with electronically reflective insulative spacer
04/01/2010WO2010036597A1 Improving data retention of last word line of non-volatile memory arrays
04/01/2010WO2010036573A1 Reducing spin pumping induced damping of a free layer of a memory device
04/01/2010WO2010035241A1 Method and system for adaptive coding in flash memories
04/01/2010US20100081395 Dram having stacked capacitors of different capacitances
04/01/2010US20100080072 Methods and systems to write to soft error upset tolerant latches
04/01/2010US20100080071 Data storage using read-mask-write operation
04/01/2010US20100080062 Nonvolatile semiconductor memory device and method for driving same
04/01/2010US20100080055 Semiconductor memory device
04/01/2010US20100080054 Non-volatile semiconductor memory device and its reading method
04/01/2010US20100080053 Static source plane in stram
04/01/2010US20100080052 Arrangement and method for controlling a micromechanical element
04/01/2010US20100080051 Bit-erasing architecture for seek-scan probe (ssp) memory storage
04/01/2010US20100080050 Magnetoresistive effect device and magnetic memory
04/01/2010US20100080049 Thermally assisted multi-bit mram
04/01/2010US20100080048 Stt-mram cell structure incorporating piezoelectric stress material
04/01/2010US20100080047 Spin current generator for stt-mram or other spintronics applications
04/01/2010US20100080046 Semiconductor device
04/01/2010US20100080045 Robust 8t sram cell
04/01/2010US20100080044 Semiconductor memory device having balancing capacitors
04/01/2010US20100080043 Apparatus for the dynamic detection, selection and deselection of leaking decoupling capacitors
04/01/2010US20100080042 Integrating nonvolatile memory capability within sram devices
04/01/2010US20100080041 Semiconductor device
04/01/2010US20100080040 Nonvolatile memory device and method of driving the same
04/01/2010US20100080039 Nonvoltile memory device and method of driving the same
04/01/2010US20100080038 Semiconductor memory device
04/01/2010US20100080037 Nonvolatile semiconductor memory device
04/01/2010US20100080036 Unidirectional spin torque transfer magnetic memory cell structure
04/01/2010US20100079600 Printer CPU With VLIW Processor
04/01/2010US20100078758 Miim diodes
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