Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2010
06/29/2010US7746688 PRAM and method of firing memory cells
06/29/2010US7746687 Thermally assisted multi-bit MRAM
06/29/2010US7746686 Partitioned random access and read only memory
06/29/2010US7746685 Semiconductor memory device
06/29/2010US7746684 Operating process of organic device
06/29/2010US7746683 NOR and NAND memory arrangement of resistive memory elements
06/29/2010US7746682 SEU hardened latches and memory cells using programmable resistance devices
06/29/2010US7746681 Methods of making quantum dot films
06/29/2010US7746601 Magneto-resistance effect element with a surface contacting with a side face of electrode having a magnetization direction
06/29/2010US7746136 Frequency-doubling delay locked loop
06/29/2010US7745919 Semiconductor device including a plurality of semiconductor chips and a plurality of through-line groups
06/29/2010US7745827 Memory device
06/29/2010US7745808 Differential negative resistance memory
06/24/2010WO2010071174A1 Method for initializing magnetoresistive element, and magnetoresistive element
06/24/2010US20100157710 Array Operation Using A Schottky Diode As a Non-Ohmic Isolation Device
06/24/2010US20100157699 Write circuitry for hierarchical memory architecture
06/24/2010US20100157680 Semiconductor device and method of manufacturing the same
06/24/2010US20100157667 Capacitorless DRAM memory cell comprising a partially-depleted MOSFET device comprising a gate insulator in two parts
06/24/2010US20100157666 Method for reading semiconductor memories and semiconductor memory
06/24/2010US20100157665 Memory cell device and programming methods
06/24/2010US20100157664 Magnetoresistive memory cell using floating body effect, memory device having the same, and method of operating the memory device
06/24/2010US20100157663 Information storage device and method of operating the same
06/24/2010US20100157662 Mram and method for writing in mram
06/24/2010US20100157661 Semiconductor memory device
06/24/2010US20100157660 Multiple-valued dram
06/24/2010US20100157659 Digital potentiometer using third dimensional memory
06/24/2010US20100157658 Conductive metal oxide structures in non-volatile re-writable memory devices
06/24/2010US20100157657 Multi-resistive state memory device with conductive oxide electrodes
06/24/2010US20100157656 Resistance change memory
06/24/2010US20100157655 Resistive memory and data write-in method
06/24/2010US20100157654 Balancing A Signal Margin Of A Resistance Based Memory Circuit
06/24/2010US20100157653 Quad memory cell and method of making same
06/24/2010US20100157652 Programming a memory cell with a diode in series by applying reverse bias
06/24/2010US20100157651 Method of programming a nonvolatile memory device containing a carbon storage material
06/24/2010US20100157650 Ferroelectric memory
06/24/2010US20100157642 Mitigation of charge sharing in memory devices
06/24/2010US20100155894 Fabricating Bipolar Junction Select Transistors For Semiconductor Memories
06/24/2010US20100155807 Apparatus and methods for improved flash cell characteristics
06/24/2010US20100155804 Shallow Trench Isolation For A Memory
06/23/2010EP2200045A1 Method of updating contents of a multibit flash memory
06/23/2010EP2198457A2 Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells
06/23/2010EP1743340B1 Non-volatile programmable memory
06/23/2010CN1992283B Stacked memory cell for use in high-density CMOS SRAM
06/23/2010CN1942975B Memory system and method for programming non-volatile memory unit
06/23/2010CN1905064B Semiconductor device and method for driving the same
06/23/2010CN1819023B System and method for transferring data to and from a magnetic shift register with a shiftable data column
06/23/2010CN1770316B Magnetic recording element and magnetic recording apparatus
06/23/2010CN1767053B Semiconductor storage device and method of testing thereof
06/23/2010CN1637942B Semiconductor memory device and method for implementing refresh operation therein
06/23/2010CN1612267B Semiconductor storage
06/23/2010CN1239306B Synchronous semiconductor memory
06/23/2010CN101752498A Ga2Te3 phase-change memory element and preparation method thereof
06/23/2010CN101752497A Phase-change storage unit with low power consumption and high stability and preparation method thereof
06/23/2010CN101752053A Magnetic thin film and manufacturing method thereof and various application device using same
06/23/2010CN101751994A Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
06/23/2010CN101751993A Apparatus and method for cache control
06/23/2010CN101751992A Switch and method of forming the same
06/23/2010CN101751991A Resistance-change memory device
06/23/2010CN101751990A Resistance variable memory device
06/23/2010CN101751989A Information storage device using magnetic domain wall movement and method of operating the same
06/23/2010CN101751988A Magnetic track, information storage device comprising magnetic track and method of operating the information storage device
06/23/2010CN101751985A Method for updating memory device
06/23/2010CN101751976A Integrated circuit structure and chip group including the same
06/23/2010CN101067966B Semiconductor memory with resistance change element
06/22/2010US7743262 Integrated circuit incorporating protection from power supply attacks
06/22/2010US7743230 Memory array programming circuit and a method for using the circuit
06/22/2010US7742469 Data input circuit and semiconductor device utilizing data input circuit
06/22/2010US7742353 Solid state semiconductor storage device with temperature control function, application system thereof and control element thereof
06/22/2010US7742338 Local self-boost inhibit scheme with shielded word line
06/22/2010US7742337 Semiconductor memory
06/22/2010US7742334 Nonvolatile semiconductor memory device for writing multivalued data
06/22/2010US7742333 Magnetic memory device using domain structure and multi-state of ferromagnetic material
06/22/2010US7742332 Phase-change random access memory device and semiconductor memory device
06/22/2010US7742331 Nonvolatile semiconductor memory device and data erase/write method thereof
06/22/2010US7742330 Semiconductor device
06/22/2010US7742329 Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
06/22/2010US7742328 Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors
06/22/2010US7742327 Computer-readable medium encoding a back-gate controlled asymmetrical memory cell and memory using the cell
06/22/2010US7742326 8T SRAM cell with higher voltage on the read WL
06/22/2010US7742325 Swapped-body RAM architecture
06/22/2010US7742324 Systems and devices including local data lines and methods of using, making, and operating the same
06/22/2010US7742323 Continuous plane of thin-film materials for a two-terminal cross-point memory
06/22/2010US7742322 Electronic and optoelectronic devices with quantum dot films
06/22/2010US7742270 System and method for limiting energy in an industrial control system
06/22/2010CA2327134C Method and apparatus for reducing latency in a memory system
06/17/2010WO2010068539A1 Magnetic tunnel junction stack
06/17/2010WO2010068323A1 Adaptive erase and soft programming for memory
06/17/2010US20100153628 Method of fabricating systems including heat-sensitive memory devices
06/17/2010US20100149888 Reduced signal interface memory device, system, and method
06/17/2010US20100149883 Semiconductor device
06/17/2010US20100149881 Adaptive erase and soft programming for memory
06/17/2010US20100149865 Scr matrix storage device
06/17/2010US20100149864 Memory circuit with quantum well-type carrier storage
06/17/2010US20100149863 Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices
06/17/2010US20100149862 Magnetic random access memory
06/17/2010US20100149861 Phase change memory device
06/17/2010US20100149860 Phase-change memory device
06/17/2010US20100149859 Phase-change memory device
06/17/2010US20100149858 Providing a Ready-Busy Signal From a Non-Volatile Memory Device to a Memory Controller
06/17/2010US20100149857 Reading Threshold Switching Memory Cells