Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2010
06/17/2010US20100149856 Writing Memory Cells Exhibiting Threshold Switch Behavior
06/17/2010US20100149855 Integrated circuitry for semiconductor memory
06/17/2010US20100149854 Semiconductor device storage cell structure, method of operation, and method of manufacture
06/17/2010US20100149853 Thin film capacitor, and display device and memory cell employing the same, and manufacturing methods of them
06/17/2010US20100149852 Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory
06/17/2010US20100149850 Nonvolatile semiconductor memory device
06/16/2010EP2195913A1 An apparatus and a method of producing a boosted voltage using a plurality of charge pump circuits
06/16/2010CN1975925B 半导体存储器件 A semiconductor memory device
06/16/2010CN1898747B Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
06/16/2010CN1855304B Integrated circuit device, flash memory array and method for operating flash memory
06/16/2010CN1828771B Semiconductor storage device and operating method therefor
06/16/2010CN1722302B Memory device for storing multi-bit information accroding to resistor state
06/16/2010CN1719546B Ferroelectric memory device and electronic device including the same
06/16/2010CN1701377B Recording control device and method
06/16/2010CN1694180B Multiport memory device
06/16/2010CN1677565B Method and device for conducting cache memory reading
06/16/2010CN1577622B Memory circuit, display device and electronic equipment each comprising the same
06/16/2010CN101743597A Methods, circuits, and systems to select memory regions
06/16/2010CN101740718A Multi-resistance state resistor random-access memory unit and preparation method thereof
06/16/2010CN101740716A Phase-change memory element and its forming method
06/16/2010CN101740602A Memory device and manufacturing method thereof
06/16/2010CN101740601A Resistive memory device and method of fabricating the same
06/16/2010CN101740126A Memory and method applied in one program command for the memory
06/16/2010CN101740121A Phase change random access memory
06/16/2010CN101740118A Phase-change random access memory device
06/16/2010CN101740117A Self-calibration clock circuit for SRAM
06/16/2010CN101740116A 8 transistor type low leakage sram cell
06/16/2010CN101740115A Semiconductor memory device and read access method thereof
06/16/2010CN101740114A Semiconductor memory device and sense amplifier circuit
06/16/2010CN101740113A Method and system for providing directed bank refresh for volatile memories
06/16/2010CN101740107A Bit line cutting buffer
06/16/2010CN101740099A Single end bit line sense amplifier
06/16/2010CN101740097A Data transmitting system
06/16/2010CN101335327B Method for controlling phase-change material or phase-change memory unit volume change and corresponding construction
06/16/2010CN101263560B Compensation currents in non-volatile memory read operations
06/16/2010CN101241926B Programmable phase change material structure and its forming method
06/16/2010CN101194323B Selective application method and system of program inhibit schemes in non-volatile memory
06/16/2010CN101149969B Semiconductor memory and memory system
06/16/2010CN101149965B Wordline booster design circuit and method of operating the same, and memory array having the circuit
06/16/2010CN101128883B Flash memroy apparatus, electronics system and method of multiple level programming in a non-volatile memory device
06/16/2010CN101057299B Concurrent programming of non-volatile memory
06/16/2010CN101035679B System for aligning a charge tunnel of an ink jet printer
06/16/2010CN101023493B An organic ferroelectric or electret memory circuit and a method for making same
06/16/2010CN101015060B Shield plate for limiting cross coupling between floating gates
06/15/2010USRE41379 Large-Capacity semiconductor memory with improved layout for sub-amplifiers to increase operational speed
06/15/2010US7738334 Optical recording medium, recording/reproducing apparatus, and recording/reproducing method
06/15/2010US7738304 Multiple use memory chip
06/15/2010US7738303 Method of erasing a nonvolatile memory device
06/15/2010US7738302 Semiconductor memory device with stores plural data in a cell
06/15/2010US7738300 Memory cell and method of programming the same
06/15/2010US7738299 Erase discharge control method of nonvolatile semiconductor memory device
06/15/2010US7738295 Programming a non-volatile memory device
06/15/2010US7738290 Phase change memory device
06/15/2010US7738289 Memory accessing circuit and method
06/15/2010US7738288 Phase change memory device having a plurality of reference currents and operating method thereof
06/15/2010US7738287 Method and system for providing field biased magnetic memory devices
06/15/2010US7738286 Magnetic memory device
06/15/2010US7738285 Semiconductor memory device
06/15/2010US7738283 Design structure for SRAM active write assist for improved operational margins
06/15/2010US7738282 Cell structure of dual port SRAM
06/15/2010US7738281 Semiconductor storage device
06/15/2010US7738279 Integrated circuit and method of operating an integrated circuit
06/15/2010US7737509 Semiconductor integrated circuit device
06/15/2010US7737487 Nonvolatile memories with tunnel dielectric with chlorine
06/10/2010WO2010065753A1 Magnetic random access memory with dual spin torque reference layers
06/10/2010WO2010065691A1 Non-volatile state retention latches
06/10/2010WO2010065619A1 Spin-torque bit cell with unpinned reference layer and unidirectional write current
06/10/2010WO2010065518A1 Methods for graphene-assisted fabrication of micro- and nanoscale structures and devices featuring the same
06/10/2010WO2010064476A1 Magnetic memory element and nonvolatile storage device
06/10/2010WO2010030692A3 Multi-pass programming for memory with reduced data storage requirement
06/10/2010WO2010030561A3 Systems, methods, and apparatuses for in-band data mask bit transmission
06/10/2010US20100146641 Method and device for protection of an mram device against tampering
06/10/2010US20100146196 Memory system having a plurality of types of memory chips and a memory controller for controlling the memory chips
06/10/2010US20100146171 Memory system having a plurality of types of memory chips and a memory controller for controlling the memory chips
06/10/2010US20100142303 Digitally-Controllable Delay for Sense Amplifier
06/10/2010US20100142275 Continuous address space in non-volatile-memories (nvm) using efficient management methods for array deficiencies
06/10/2010US20100142273 Programming methods for multi-level memory devices
06/10/2010US20100142266 Vertical field-effect transistor
06/10/2010US20100142265 Magnetic structure with multiple-bit storage capabilities
06/10/2010US20100142264 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
06/10/2010US20100142263 Semiconductor Switching Device
06/10/2010US20100142262 Information recording and reproducing apparatus
06/10/2010US20100142261 Information recording and reproducing apparatus
06/10/2010US20100142260 Data Integrity Preservation In Spin Transfer Torque Magnetoresistive Random Access Memory
06/10/2010US20100142259 Nanogaps: methods and devices containing same
06/10/2010US20100142258 Ten-transistor static random access memory architecture
06/10/2010US20100142257 Semiconductor storage device
06/10/2010US20100142256 Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element
06/10/2010US20100142255 Method to program a memory cell comprising a carbon nanotube fabric element and a steering element
06/10/2010US20100142254 Nonvolatile Memory Device Using Variable Resistive Element
06/10/2010US20100142251 Memory devices having programmable elements with accurate operating parameters stored thereon
06/10/2010US20100142249 Nonvolatile memory device using a variable resistive element
06/10/2010US20100142245 Semiconductor device
06/10/2010US20100140579 Silver-selenide/chalcogenide glass stack for resistance variable memory
06/10/2010DE19926588B4 Integriertes Schaltkreisbauelement Integrated circuit device
06/10/2010DE19823584B4 Halbleiterspeicherbauelement The semiconductor memory device
06/10/2010DE10251220B4 Halbleiterspeichervorrichtung mit Speicherzellen, die keinen Auffrischbetrieb erfordern A semiconductor memory device having memory cells which do not require a refresh operation
06/10/2010DE102006058865B4 Halbleiterspeicherbauelement und Verfahren zum Schreiben von Daten The semiconductor memory device and method for writing data
06/09/2010EP2193522A1 System and method for processing signals in high speed dram
06/09/2010CN1959837B Semiconductor memory device
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