Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2010
02/03/2010EP2149884A1 Semiconductor memory
02/03/2010CN201397686Y 储存装置 Storage device
02/03/2010CN201397685Y Phone message backup disc
02/03/2010CN201397683Y U disk with money detecting function
02/03/2010CN101641746A Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
02/03/2010CN101640066A Memory controller and multi-memory system
02/03/2010CN101640065A Refresh controller and refresh control method used for embedded DRAM
02/03/2010CN101640064A Serial memory device and signal processing system
02/03/2010CN100587843C Programmed method for multi-level nitride memory unit and multi-level flash memory element
02/03/2010CN100587842C Writing and reading method for NAND type flash memory and related page buffer thereof
02/03/2010CN100587841C Non-volatile memory device and programming method thereof
02/03/2010CN100587840C Memory device having delay locked loop
02/03/2010CN100587839C Storage for controlling address buffer by programmable delay
02/03/2010CN100587838C Memory with charge storage locations
02/03/2010CN100587837C Memory
02/03/2010CN100587836C Nonvolatile semiconductor memory
02/03/2010CN100587834C Memory and method for refreshing memory array
02/02/2010US7657768 Disk array optimizing the drive operation time
02/02/2010US7657713 Memory using packet controller and memory
02/02/2010US7656741 Row active time control circuit and a semiconductor memory device having the same
02/02/2010US7656739 Balanced bitcell design for a multi-port register file
02/02/2010US7656725 Semiconductor memory device which compensates for delay time variations of multi-bit data
02/02/2010US7656718 Semiconductor device having output buffer initialization circuit and output buffer initialization method
02/02/2010US7656713 Non-volatile memory read operations using compensation currents
02/02/2010US7656708 Memory architecture with advanced main-bitline partitioning circuitry for enhanced erase/program/verify operations
02/02/2010US7656706 Storing information in a memory
02/02/2010US7656705 Fast single phase program algorithm for quadbit
02/02/2010US7656704 Multi-level operation in nitride storage memory cell
02/02/2010US7656702 Ultra low voltage, low leakage, high density, variation tolerant memory bit cells
02/02/2010US7656701 Method for programming a multilevel phase change memory device
02/02/2010US7656700 Magnetoresistive sensor memory with multiferroic material
02/02/2010US7656699 Radiation-hardened programmable device
02/02/2010US7656698 Non-volatile memory cell with improved programming technique with decoupling pass gates and equalize transistors
02/02/2010US7656697 Integrated circuit having a resistively switching memory and method
02/02/2010US7656696 Resistive memory device having resistor part for controlling switching window
02/02/2010US7656622 Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon
02/02/2010US7654626 Camera device incorporating a color printer with ink validation apparatus
01/2010
01/28/2010WO2010011692A1 Methods and apparatus for programming multiple program values per signal level in flash memories
01/28/2010WO2009138739A3 Source controlled sram
01/28/2010US20100023680 Method for Controlling Non-Volatile Semiconductor Memory System
01/28/2010US20100020619 Memory controller, memory system, recording and reproducing method for memory system, and recording apparatus
01/28/2010US20100020615 Clock synchronized non-volatile memory device
01/28/2010US20100020608 Nonvolatile semiconductor memory device
01/28/2010US20100020597 Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same
01/28/2010US20100020596 Non-volatile magnetic memory device
01/28/2010US20100020595 Accessing a Phase Change Memory
01/28/2010US20100020594 Device for programming a pcm cell with discharge of capacitance and method for programming a pcm cell
01/28/2010US20100020593 Vertical string phase change random access memory device
01/28/2010US20100020592 Magnetic random access memory and write method of the same
01/28/2010US20100020591 Adaptive Voltage Control for SRAM
01/28/2010US20100020589 Semiconductor memory device
01/28/2010US20100020588 Semiconductor memory device
01/28/2010US20100020587 Semiconductor memory device
01/28/2010DE10329369B4 Schaltung und Verfahren zum Auffrischen von Speicherzellen eines dynamischen Speichers Circuit and method for refreshing memory cells of a dynamic memory
01/28/2010DE10205693B4 Halbleiterspeicherbauelement und zugehöriges Signalleitungsanordnungsverfahren Semiconductor memory device and associated signal line arrangement method
01/28/2010DE102004016702B4 Dynamischer Speicher für wahlfreien Zugriff mit reduziertem Strom für die Selbstauffrischung und Verfahren zum Auffrischen eines dynamischen Speichers mit wahlfreiem Zugriff Dynamic memory for random access with reduced power for the self-refresh and method of refreshing a dynamic random-access
01/28/2010DE10148521B4 Integrierter Speicher sowie Verfahren zum Betrieb eines integrierten Speichers und eines Speichersystems mit mehreren integrierten Speichern Integrated memory and method of operating an integrated memory and a memory system having a plurality of integrated memories
01/28/2010DE10135065B4 Halbleiterspeichervorrichtung und Verfahren für den Zugriff auf eine Speicherzelle A semiconductor memory device and method for accessing a memory cell
01/27/2010CN201392665Y USB flash disk with lighting function
01/27/2010CN101636791A Apparatus and method for integrating nonvolatile memory capability within sram devices
01/27/2010CN101635170A Current sensitive amplifier
01/27/2010CN101635169A Sram with improved read/write stability
01/27/2010CN101635168A Array capacity and density reinforced circuit of sub-threshold storage unit
01/27/2010CN101635167A Circuit for prolonging service life of ferroelectric non-volatile trigger
01/27/2010CN101635166A Information storage devices using magnetic domain wall movement and methods of operating the same
01/27/2010CN100585900C Phase changeable storage device and manufacture method thereof
01/27/2010CN100585836C Semiconductor integrated circuit
01/27/2010CN100585738C Methods and circuits for programming of a semiconductor memory cell and memory array
01/27/2010CN100585737C Variable level memory
01/27/2010CN100585736C Semiconductor storage device and method for reading from semiconductor storage device
01/27/2010CN100585735C Synchronous semiconductor memory device
01/27/2010CN100585734C Memory array circuit
01/27/2010CN100585733C Semiconductor device and fabrication method thereof
01/27/2010CN100585732C Method and system for providing orientation bank refresh for volatile memories
01/27/2010CN100585731C A method in the fabrication of a memory device
01/27/2010CN100585730C Method for operating a ferroelectric of electret memory device, and a device of this kind
01/27/2010CN100585729C Structure and access method of magnetic storage unit and magnetic memory circuit
01/27/2010CN100585728C Word line voltage compensation method for write current in phase change memory array
01/27/2010CN100585727C Semiconductor memory device and module for high frequency operation
01/26/2010US7653780 Semiconductor memory device and control method thereof
01/26/2010US7652941 Memory device
01/26/2010US7652933 Voltage generating circuit of semiconductor memory apparatus capable of reducing power consumption
01/26/2010US7652930 Method, circuit and system for erasing one or more non-volatile memory cells
01/26/2010US7652919 Multi-level operation in dual element cells using a supplemental programming level
01/26/2010US7652918 Retention margin program verification
01/26/2010US7652917 Semiconductor device
01/26/2010US7652916 SCR matrix storage device
01/26/2010US7652915 High density spin torque three dimensional (3D) memory arrays addressed with microwave current
01/26/2010US7652914 Memory including two access devices per phase change element
01/26/2010US7652913 Magnetoresistance effect element and magnetic memory
01/26/2010US7652912 Nonvolatile semiconductor memory device performing data writing in a toggle manner
01/26/2010US7652911 Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
01/26/2010US7652910 Floating body memory array
01/26/2010US7652909 2T/2C ferroelectric random access memory with complementary bit-line loads
01/26/2010US7652908 Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells
01/26/2010US7652315 Spin transistor, programmable logic circuit, and magnetic memory
01/26/2010US7652290 Standby current erasion circuit of DRAM
01/21/2010WO2010009396A1 Efficient time-based memory counters
01/21/2010WO2010007893A1 Magnetic random access memory and method for initializing thereof
01/21/2010WO2010007695A1 Spin valve element and its driving method and storage device employing them