Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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02/03/2010 | EP2149884A1 Semiconductor memory |
02/03/2010 | CN201397686Y 储存装置 Storage device |
02/03/2010 | CN201397685Y Phone message backup disc |
02/03/2010 | CN201397683Y U disk with money detecting function |
02/03/2010 | CN101641746A Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory |
02/03/2010 | CN101640066A Memory controller and multi-memory system |
02/03/2010 | CN101640065A Refresh controller and refresh control method used for embedded DRAM |
02/03/2010 | CN101640064A Serial memory device and signal processing system |
02/03/2010 | CN100587843C Programmed method for multi-level nitride memory unit and multi-level flash memory element |
02/03/2010 | CN100587842C Writing and reading method for NAND type flash memory and related page buffer thereof |
02/03/2010 | CN100587841C Non-volatile memory device and programming method thereof |
02/03/2010 | CN100587840C Memory device having delay locked loop |
02/03/2010 | CN100587839C Storage for controlling address buffer by programmable delay |
02/03/2010 | CN100587838C Memory with charge storage locations |
02/03/2010 | CN100587837C Memory |
02/03/2010 | CN100587836C Nonvolatile semiconductor memory |
02/03/2010 | CN100587834C Memory and method for refreshing memory array |
02/02/2010 | US7657768 Disk array optimizing the drive operation time |
02/02/2010 | US7657713 Memory using packet controller and memory |
02/02/2010 | US7656741 Row active time control circuit and a semiconductor memory device having the same |
02/02/2010 | US7656739 Balanced bitcell design for a multi-port register file |
02/02/2010 | US7656725 Semiconductor memory device which compensates for delay time variations of multi-bit data |
02/02/2010 | US7656718 Semiconductor device having output buffer initialization circuit and output buffer initialization method |
02/02/2010 | US7656713 Non-volatile memory read operations using compensation currents |
02/02/2010 | US7656708 Memory architecture with advanced main-bitline partitioning circuitry for enhanced erase/program/verify operations |
02/02/2010 | US7656706 Storing information in a memory |
02/02/2010 | US7656705 Fast single phase program algorithm for quadbit |
02/02/2010 | US7656704 Multi-level operation in nitride storage memory cell |
02/02/2010 | US7656702 Ultra low voltage, low leakage, high density, variation tolerant memory bit cells |
02/02/2010 | US7656701 Method for programming a multilevel phase change memory device |
02/02/2010 | US7656700 Magnetoresistive sensor memory with multiferroic material |
02/02/2010 | US7656699 Radiation-hardened programmable device |
02/02/2010 | US7656698 Non-volatile memory cell with improved programming technique with decoupling pass gates and equalize transistors |
02/02/2010 | US7656697 Integrated circuit having a resistively switching memory and method |
02/02/2010 | US7656696 Resistive memory device having resistor part for controlling switching window |
02/02/2010 | US7656622 Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon |
02/02/2010 | US7654626 Camera device incorporating a color printer with ink validation apparatus |
01/28/2010 | WO2010011692A1 Methods and apparatus for programming multiple program values per signal level in flash memories |
01/28/2010 | WO2009138739A3 Source controlled sram |
01/28/2010 | US20100023680 Method for Controlling Non-Volatile Semiconductor Memory System |
01/28/2010 | US20100020619 Memory controller, memory system, recording and reproducing method for memory system, and recording apparatus |
01/28/2010 | US20100020615 Clock synchronized non-volatile memory device |
01/28/2010 | US20100020608 Nonvolatile semiconductor memory device |
01/28/2010 | US20100020597 Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same |
01/28/2010 | US20100020596 Non-volatile magnetic memory device |
01/28/2010 | US20100020595 Accessing a Phase Change Memory |
01/28/2010 | US20100020594 Device for programming a pcm cell with discharge of capacitance and method for programming a pcm cell |
01/28/2010 | US20100020593 Vertical string phase change random access memory device |
01/28/2010 | US20100020592 Magnetic random access memory and write method of the same |
01/28/2010 | US20100020591 Adaptive Voltage Control for SRAM |
01/28/2010 | US20100020589 Semiconductor memory device |
01/28/2010 | US20100020588 Semiconductor memory device |
01/28/2010 | US20100020587 Semiconductor memory device |
01/28/2010 | DE10329369B4 Schaltung und Verfahren zum Auffrischen von Speicherzellen eines dynamischen Speichers Circuit and method for refreshing memory cells of a dynamic memory |
01/28/2010 | DE10205693B4 Halbleiterspeicherbauelement und zugehöriges Signalleitungsanordnungsverfahren Semiconductor memory device and associated signal line arrangement method |
01/28/2010 | DE102004016702B4 Dynamischer Speicher für wahlfreien Zugriff mit reduziertem Strom für die Selbstauffrischung und Verfahren zum Auffrischen eines dynamischen Speichers mit wahlfreiem Zugriff Dynamic memory for random access with reduced power for the self-refresh and method of refreshing a dynamic random-access |
01/28/2010 | DE10148521B4 Integrierter Speicher sowie Verfahren zum Betrieb eines integrierten Speichers und eines Speichersystems mit mehreren integrierten Speichern Integrated memory and method of operating an integrated memory and a memory system having a plurality of integrated memories |
01/28/2010 | DE10135065B4 Halbleiterspeichervorrichtung und Verfahren für den Zugriff auf eine Speicherzelle A semiconductor memory device and method for accessing a memory cell |
01/27/2010 | CN201392665Y USB flash disk with lighting function |
01/27/2010 | CN101636791A Apparatus and method for integrating nonvolatile memory capability within sram devices |
01/27/2010 | CN101635170A Current sensitive amplifier |
01/27/2010 | CN101635169A Sram with improved read/write stability |
01/27/2010 | CN101635168A Array capacity and density reinforced circuit of sub-threshold storage unit |
01/27/2010 | CN101635167A Circuit for prolonging service life of ferroelectric non-volatile trigger |
01/27/2010 | CN101635166A Information storage devices using magnetic domain wall movement and methods of operating the same |
01/27/2010 | CN100585900C Phase changeable storage device and manufacture method thereof |
01/27/2010 | CN100585836C Semiconductor integrated circuit |
01/27/2010 | CN100585738C Methods and circuits for programming of a semiconductor memory cell and memory array |
01/27/2010 | CN100585737C Variable level memory |
01/27/2010 | CN100585736C Semiconductor storage device and method for reading from semiconductor storage device |
01/27/2010 | CN100585735C Synchronous semiconductor memory device |
01/27/2010 | CN100585734C Memory array circuit |
01/27/2010 | CN100585733C Semiconductor device and fabrication method thereof |
01/27/2010 | CN100585732C Method and system for providing orientation bank refresh for volatile memories |
01/27/2010 | CN100585731C A method in the fabrication of a memory device |
01/27/2010 | CN100585730C Method for operating a ferroelectric of electret memory device, and a device of this kind |
01/27/2010 | CN100585729C Structure and access method of magnetic storage unit and magnetic memory circuit |
01/27/2010 | CN100585728C Word line voltage compensation method for write current in phase change memory array |
01/27/2010 | CN100585727C Semiconductor memory device and module for high frequency operation |
01/26/2010 | US7653780 Semiconductor memory device and control method thereof |
01/26/2010 | US7652941 Memory device |
01/26/2010 | US7652933 Voltage generating circuit of semiconductor memory apparatus capable of reducing power consumption |
01/26/2010 | US7652930 Method, circuit and system for erasing one or more non-volatile memory cells |
01/26/2010 | US7652919 Multi-level operation in dual element cells using a supplemental programming level |
01/26/2010 | US7652918 Retention margin program verification |
01/26/2010 | US7652917 Semiconductor device |
01/26/2010 | US7652916 SCR matrix storage device |
01/26/2010 | US7652915 High density spin torque three dimensional (3D) memory arrays addressed with microwave current |
01/26/2010 | US7652914 Memory including two access devices per phase change element |
01/26/2010 | US7652913 Magnetoresistance effect element and magnetic memory |
01/26/2010 | US7652912 Nonvolatile semiconductor memory device performing data writing in a toggle manner |
01/26/2010 | US7652911 Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers |
01/26/2010 | US7652910 Floating body memory array |
01/26/2010 | US7652909 2T/2C ferroelectric random access memory with complementary bit-line loads |
01/26/2010 | US7652908 Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells |
01/26/2010 | US7652315 Spin transistor, programmable logic circuit, and magnetic memory |
01/26/2010 | US7652290 Standby current erasion circuit of DRAM |
01/21/2010 | WO2010009396A1 Efficient time-based memory counters |
01/21/2010 | WO2010007893A1 Magnetic random access memory and method for initializing thereof |
01/21/2010 | WO2010007695A1 Spin valve element and its driving method and storage device employing them |