Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2010
01/21/2010WO2010007173A1 A new sense amplifier circuit
01/21/2010WO2009126874A3 Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
01/21/2010US20100015785 Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
01/21/2010US20100014372 Semiconductor Device, an Electronic Device and a Method for Operating the Same
01/21/2010US20100014371 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
01/21/2010US20100014359 Operating method of non-volatile memory
01/21/2010US20100014351 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
01/21/2010US20100014349 Programming non-volatile storage using binary and multi-state programming processes
01/21/2010US20100014347 Diode assisted switching spin-transfer torque memory unit
01/21/2010US20100014346 Unipolar spin-transfer switching memory unit
01/21/2010US20100014345 Nonvolatile memory device with temperature controlled column selection signal levels
01/21/2010US20100014344 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof
01/21/2010US20100014343 Nonvolatile memory apparatus and nonvolatile data storage medium
01/21/2010US20100014342 Semiconductor storage device
01/21/2010US20100014341 Semiconductor memory device
01/21/2010US20100013516 Devices and methods for controlling active termination resistors in a memory system
01/21/2010US20100013013 1t/0c ram cell with a wrapped-around gate device structure
01/21/2010DE19928454B4 Speichervorrichtung mit Reihendecodierer Memory device with row decoder
01/21/2010DE19750884B4 Halbleiterspeichervorrichtung A semiconductor memory device
01/21/2010DE19740329B4 Halbleiterspeicherbauelement mit Mehrfachbank Semiconductor memory device having multiple bank
01/21/2010DE19652870B4 Halbleiterspeichervorrichtung A semiconductor memory device
01/21/2010DE10216607B4 Halbleiterspeichervorrichtung A semiconductor memory device
01/21/2010DE102006051514B4 Speichermodul und Verfahren zum Betreiben eines Speichermoduls Memory module and method of operating a memory module
01/21/2010DE102005035152B4 Mram MRAM
01/21/2010DE102004036455B4 Verzögerungsschaltung und Verzögerungssynchronisations-Schleifenvorrichtung Delay circuit and delay synchronization loop device
01/21/2010DE102004019675B4 Speicher mit Referenz-eingeleitetem sequentiellen Lesen Memory reference-initiated sequential read
01/20/2010EP2145389A1 Software programmable logic using spin transfer torque magnetoresistive devices
01/20/2010EP1690262B1 Non-homogeneous shielding of an mram chip with magnetic field sensor
01/20/2010EP1559110B1 Control of memory arrays utilizing zener diode-like devices
01/20/2010CN201387727Y Portable mobile memory device with ball pen
01/20/2010CN101632129A Improved multi-level memory
01/20/2010CN100583638C Semiconductor device employing dynamic circuit
01/20/2010CN100583484C Manufacturing method for pipe-shaped electrode phase change memory
01/20/2010CN100583483C Phase change memory cell and manufacturing method
01/20/2010CN100583482C Tunnel magnetoresistance effect film and magnetic device
01/20/2010CN100583292C Memory device containing double MONOS unit and method for operating the memory device
01/20/2010CN100583291C Semiconductor memory device having local sense amplifier with on/off control
01/20/2010CN100583290C Memory device for retaining data during power-down mode and method of operating the same
01/20/2010CN100583287C Addressing circuit for a cross-point memory array including cross-point resistive elements
01/19/2010US7650635 Method and apparatus for preventing network attacks by authenticating internet control message protocol packets
01/19/2010US7649802 Method for controlling time point for data output in synchronous memory device
01/19/2010US7649791 Non volatile memory device architecture and corresponding programming method
01/19/2010US7649788 Buffering systems for accessing multiple layers of memory in integrated circuits
01/19/2010US7649785 Flash memory device and related high voltage generating circuit
01/19/2010US7649784 Memory cell programming methods capable of reducing coupling effects
01/19/2010US7649780 Semiconductor memory device
01/19/2010US7649777 Nonvolatile semiconductor memory cell matrix with divided write/erase, a method for operating the same, monolithic integrated circuits and systems
01/19/2010US7649774 Method of controlling memory system
01/19/2010US7649772 Memory and method for programming in multiple storage region multi-level cells
01/19/2010US7649771 Method for decreasing program disturb in memory cells
01/19/2010US7649770 Programming matrix
01/19/2010US7649769 Circuit arrays having cells with combinations of transistors and nanotube switching elements
01/19/2010US7649768 Resistance memory element
01/19/2010US7649767 Spin-injection magnetic random access memory
01/19/2010US7649766 Magnetic storage device
01/19/2010US7649765 Magnetic memory cell and method of fabricating same
01/19/2010US7649764 Memory with shared write bit line(s)
01/19/2010US7649763 Nonvolatile ferroelectric memory
01/19/2010US7649242 Programmable resistive memory cell with a programmable resistance layer
01/14/2010WO2010005554A1 Mtj based magnetic field sensor with esd shunt trace
01/14/2010WO2010004881A1 Magnetic random access memory, and initialization method and writing method for magnetic random access memory
01/14/2010WO2010004664A1 Semiconductor memory device
01/14/2010US20100008164 Memory
01/14/2010US20100008163 Memory architecture and cell design employing two access transistors
01/14/2010US20100008152 Semiconductor device including driving transistors
01/14/2010US20100008147 Sensing circuit for flash memory device operating at low power supply voltage
01/14/2010US20100008146 Memory device and method of programming thereof
01/14/2010US20100008135 Information storage devices using magnetic domain wall movement and methods of operating the same
01/14/2010US20100008134 Transmission gate-based spin-transfer torque memory unit
01/14/2010US20100008133 Phase change memory devices and systems, and related programming methods
01/14/2010US20100008132 Resistance memory element, phase change memory element, resistance random access memory device, information reading method thereof, phase change random access memory device, and information reading method thereof
01/14/2010US20100008131 Magnetoresistance effect element and mram
01/14/2010US20100008130 Method of operating magnetic random access memory device
01/14/2010US20100008129 Semiconductor memory device and method of controlling the same
01/14/2010US20100008128 Resistive nonvolatile memory element, and production method of the same
01/14/2010US20100008127 Resistance variable element and resistance variable memory apparatus
01/14/2010US20100008126 Three-dimensional memory device
01/14/2010US20100008125 Semiconductor memory device and redundancy method therefor
01/14/2010US20100008124 Cross point memory cell with distributed diodes and method of making same
01/14/2010US20100008123 Multiple series passive element matrix cell for three-dimensional arrays
01/14/2010US20100008122 Memory Device And Method For Making Same
01/14/2010US20100008121 Method for driving ferroelectric memory device, ferroelectric memory device, and electronic equipment
01/14/2010US20100007745 Digital camera having printhead and removable cartridge
01/14/2010DE19860650B4 Synchrone Halbleiter-Speichervorrichtung mit einer Chip-Satz-Speichersteuervorrichtung mit Datenausblend-Maskenfunktion The synchronous semiconductor memory device having a chip set memory controller with data strobe mask function
01/14/2010DE10361496B4 Anordnung mit einer Speichereinrichtung und einer programmgesteuerten Einheit Arrangement with a memory device and a programmable unit
01/14/2010DE102005006343B4 Integrierter Halbleiterspeicher mit taktsynchroner Zugriffssteuerung Integrated semiconductor memory with an isochronous access control
01/14/2010DE102004024634B4 Integrierter Schaltungsbaustein und Speichersystem mit Datenpuffer sowie zugehöriges Steuerverfahren Integrated circuit device and memory system with data buffer and associated control method
01/13/2010EP2143109A2 A method of driving a semiconductor memory device and a semiconductor memory device
01/13/2010CN201383345Y External memory
01/13/2010CN101627437A Reversible polarity decoder circuit and related methods
01/13/2010CN101625892A Controller of dynamic random-access memory and user instruction treatment method
01/13/2010CN101625891A Sub-threshold storing unit circuit with high density and high robustness
01/13/2010CN101625890A Operation method of magnetic random access memory device
01/13/2010CN101624701A Dry etching method for magnetic material
01/13/2010CN100580970C Memory cell and its making method
01/13/2010CN100580969C Phase-change memory device
01/13/2010CN100580968C Magnetoresistive element and magnetic memory
01/13/2010CN100580944C Phase-change memory array and manufacturing method thereof
01/13/2010CN100580929C Solid-state memory and operation method thereof
01/13/2010CN100580810C Operation method for group VI element compound storage unit