| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 01/13/2010 | CN100580809C SRAM device and operating method thereof |
| 01/13/2010 | CN100580808C Data input device for use in semiconductor memory device |
| 01/13/2010 | CN100580807C Semiconductor memory device |
| 01/13/2010 | CN100580806C Memory body and low offset limitation bias circuit thereof |
| 01/13/2010 | CN100580805C Semiconductor device |
| 01/13/2010 | CN100580804C Dynamic RAM device with data-handling capacity |
| 01/13/2010 | CN100580803C System including number of memory modules and chip set memory controller |
| 01/13/2010 | CN100580801C Memory chip architecture having non-rectangular memory banks and method for arranging memory banks |
| 01/12/2010 | US7646667 Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
| 01/12/2010 | US7646666 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
| 01/12/2010 | US7646662 Semiconductor device |
| 01/12/2010 | US7646659 Semiconductor device temperature sensor and semiconductor storage device |
| 01/12/2010 | US7646654 Distributed write data drivers for burst access memories |
| 01/12/2010 | US7646649 Memory device with programmable receivers to improve performance |
| 01/12/2010 | US7646647 Measuring circuit and reading method for memory cells |
| 01/12/2010 | US7646641 NAND flash memory with nitride charge storage gates and fabrication process |
| 01/12/2010 | US7646638 Non-volatile memory cell that inhibits over-erasure and related method and memory array |
| 01/12/2010 | US7646635 Data reading circuit of toggle magnetic memory |
| 01/12/2010 | US7646634 Magnetic memory device and method of magnetization reversal of the magnetization of at least one magnetic memory element |
| 01/12/2010 | US7646633 Method for programming phase-change memory and method for reading date from the same |
| 01/12/2010 | US7646632 Integrated circuit for setting a memory cell based on a reset current distribution |
| 01/12/2010 | US7646631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods |
| 01/12/2010 | US7646630 Programmable matrix array with chalcogenide material |
| 01/12/2010 | US7646629 Method for operating a data storage apparatus employing passive matrix addressing |
| 01/12/2010 | US7646628 Toggle magnetic random access memory and write method of toggle magnetic random access memory |
| 01/12/2010 | US7646627 Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance |
| 01/12/2010 | US7646626 Page mode access for non-volatile memory arrays |
| 01/12/2010 | US7646625 Conditioning operations for memory cells |
| 01/12/2010 | US7646624 Method of selecting operating characteristics of a resistive memory device |
| 01/12/2010 | US7646623 Ferroelectric memory device and electronic apparatus |
| 01/12/2010 | US7646007 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 01/07/2010 | WO2010002948A1 Methods and apparatus for soft demapping and intercell interference mitigation in flash memories |
| 01/07/2010 | WO2010002945A1 Methods and apparatus for intercell interference mitigation using modulation coding |
| 01/07/2010 | WO2010002943A1 Methods and apparatus for interfacing between a flash memory controller and a flash memory array |
| 01/07/2010 | WO2010002942A1 Method and apparatus for write-side intercell interference mitigation in flash memories |
| 01/07/2010 | WO2010002941A1 Methods and apparatus for read-side intercell interference mitigation in flash memories |
| 01/07/2010 | WO2010002881A1 Programming and selectively erasing non-volatile storage |
| 01/07/2010 | WO2010002879A1 Correcting for over programming non-volatile storage |
| 01/07/2010 | WO2010002873A1 Selective erase operation for non-volatile storage |
| 01/07/2010 | WO2010002637A1 Controlled value reference signal of resistance based memory circuit |
| 01/07/2010 | WO2010002560A2 Multi-mode memory device and method |
| 01/07/2010 | WO2010001549A1 Electronic circuit device |
| 01/07/2010 | WO2010001433A1 Memory device and memory controller for controlling the same |
| 01/07/2010 | WO2010001383A1 Method for scrambling data stored in non-volatile memory using scrambler seeds based on page and block numbers |
| 01/07/2010 | WO2010001018A1 Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element |
| 01/07/2010 | WO2010000062A1 Multiple-bit per cell (mbc) non-volatile memory apparatus and system having polarity control and method of programming same |
| 01/07/2010 | WO2009121022A3 Systems, methods, and apparatuses to save memory self-refresh power |
| 01/07/2010 | WO2009086441A3 Self-contained charge storage molecules for use in molecular capacitors |
| 01/07/2010 | WO2009015306A3 Capacitor save energy verification |
| 01/07/2010 | US20100002774 Memory device and device and method for detecting motion vector |
| 01/07/2010 | US20100002517 Semiconductor device and method for controlling |
| 01/07/2010 | US20100002502 Memory device and method of refreshing |
| 01/07/2010 | US20100002501 MRAM Device Structure Employing Thermally-Assisted Write Operations and Thermally-Unassisted Self-Referencing Operations |
| 01/07/2010 | US20100002500 Read Reference Circuit for a Sense Amplifier Within a Chalcogenide Memory Device |
| 01/07/2010 | US20100002499 Phase change memory programming method without reset over-write |
| 01/07/2010 | US20100002498 Integrated circuit for programming a memory cell |
| 01/07/2010 | US20100002497 Space and process efficient mram |
| 01/07/2010 | US20100002496 Semiconductor memory device |
| 01/07/2010 | US20100002495 Column Selectable Self-Biasing Virtual Voltages for SRAM Write Assist |
| 01/07/2010 | US20100002494 Memory Device with Memory Cell Including MuGFET and FIN Capacitor |
| 01/07/2010 | US20100002493 Semiconductor storage device |
| 01/07/2010 | US20100002492 Resistance change memory |
| 01/07/2010 | US20100002491 Resistance ram having oxide layer and solid electrolyte layer, and method for operating the same |
| 01/07/2010 | US20100002490 Electric element, memory device, and semiconductor integrated circuit |
| 01/07/2010 | US20100002489 Passive matrix-addressable memory apparatus |
| 01/07/2010 | US20100002488 F-SRAM Margin Screen |
| 01/07/2010 | US20100002487 Three-dimensional magnetic memory |
| 01/07/2010 | US20100002486 Magnetic shift register memory device |
| 01/07/2010 | US20100002481 Content addressable memory using phase change devices |
| 01/07/2010 | US20100002085 Recyclable Digital Camera |
| 01/07/2010 | US20100001765 Sense amplifier for low voltage high speed sensing |
| 01/07/2010 | US20100001329 Method of manufacturing semiconductor integrated circuit device having capacitor element |
| 01/07/2010 | CA2728697A1 Multiple-bit per cell (mbc) non-volatile memory apparatus and system having polarity control and method of programming same |
| 01/06/2010 | EP2141707A1 High density content addressable memory using phase change devices |
| 01/06/2010 | EP2140456A1 Gated lateral thyristor memory cells and integrated circuits incorporating the same |
| 01/06/2010 | EP2140455A1 Magnetic memory with magnetic tunnel junction |
| 01/06/2010 | EP1150302B1 Semiconductor integrated circuit and nonvolatile memory element |
| 01/06/2010 | CN101620883A DRAM run frequency adjustment system and method |
| 01/06/2010 | CN101620882A Semiconductor memory device and reset control circuit of the same |
| 01/06/2010 | CN100578834C Phase variation storage installation and its making method |
| 01/06/2010 | CN100578669C Nonvolatile memory |
| 01/06/2010 | CN100578668C Multi-level memory element and methods for programming and reading the same |
| 01/06/2010 | CN100578667C Method for operating or programming non-volatile memory unit |
| 01/06/2010 | CN100578666C Method and apparatus for implementing high speed memory |
| 01/06/2010 | CN100578665C Semiconductor memory |
| 01/06/2010 | CN100578664C Redundancy control circuit and semiconductor device using the same |
| 01/06/2010 | CN100578663C Ferroelectric memory and method for reading data thereof |
| 01/06/2010 | CN100578657C Memory array with low power precharge bit line |
| 01/05/2010 | US7643361 Redundancy circuit capable of reducing time for redundancy discrimination |
| 01/05/2010 | US7643360 Method and apparatus for synchronization of row and column access operations |
| 01/05/2010 | US7643357 System and method for integrating dynamic leakage reduction with write-assisted SRAM architecture |
| 01/05/2010 | US7643352 Method for erasing flash memory |
| 01/05/2010 | US7643350 Nonvolatile semiconductor memory device and method of writing data into the same |
| 01/05/2010 | US7643347 Semiconductor memory device |
| 01/05/2010 | US7643346 NAND type nonvolatile semiconductor memory device having sideface electrode shared by memory cells |
| 01/05/2010 | US7643345 Semiconductor memory device which includes stacked gate having charge accumulation layer and control gate |
| 01/05/2010 | US7643342 Multi-bit-per-cell flash memory device with non-bijective mapping |
| 01/05/2010 | US7643341 Integrated circuit having a memory arrangement |
| 01/05/2010 | US7643338 Method for programming a flash memory device |
| 01/05/2010 | US7643336 Phase change memory device |