Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2010
04/29/2010US20100103722 Method of programming resistivity changing memory
04/29/2010US20100103721 Heater and memory cell, memory device and recording head including the heater
04/29/2010US20100103720 Biosensor and sensing cell array using the same
04/29/2010US20100103719 Two-Stage 8T SRAM Cell Design
04/29/2010US20100103718 Semiconductor memory device
04/29/2010US20100103717 Tuning a variable resistance of a resistive sense element
04/29/2010US20100103716 Non-Volatile Memory with Metal-Polymer Bi-Layer
04/29/2010US20100103715 Semiconductor storage device and method of operating the same
04/29/2010US20100103714 Semiconductor storage device
04/29/2010US20100102306 Multi-level memory cell and manufacturing method thereof
04/29/2010DE102006059743B4 Verfahren zum Trimmen eines Parameters eines Halbleiter-Bauelements A method for trimming a parameter of a semiconductor device
04/29/2010DE10155424B4 Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems einer digitalen magnetischen Speicherzelleneinrichtung A method for homogeneous magnetization of a layer exchange coupled system of a digital magnetic memory cell device
04/29/2010DE10121649B4 Auswahlsignal-Erzeugungsschaltung mit einer Klemmschaltung zum Klemmen von Auswahlsignalen beim Einschalten Selection signal generating circuit with a clamp circuit for clamping of selection signals when switching
04/28/2010EP2179419A2 Secure storage of a codeword within an integrated circuit
04/28/2010EP2179362A1 Memory system
04/28/2010CN1784642B Chalcogenide constant current device,and its method of fabrication and operation
04/28/2010CN1744320B Semiconductor device and method for manufacturing the same
04/28/2010CN1729537B Magnetoresistive random access memory with reduced switching field
04/28/2010CN1717662B Memory module, memory system, and information device
04/28/2010CN1716445B Semiconductor integrated circuit
04/28/2010CN1695200B Semiconductor memory
04/28/2010CN1674144B Semiconductor memory device and reading out method for redundancy remedial address
04/28/2010CN1666289B Balanced load memory and method of operation
04/28/2010CN1638224B Semiconductor device and semiconductor device module
04/28/2010CN1578988B Error management for writable tracking storage units storing reference values
04/28/2010CN1574999B 信息处理装置 The information processing apparatus
04/28/2010CN1558423B 半导体存储器 Semiconductor memory
04/28/2010CN1538453B Booster power circuit
04/28/2010CN1535467B Memory device, method for manufacturing memory device and method for programming the memory device
04/28/2010CN1527322B Clock synchronizing semiconductor memory equipment
04/28/2010CN1524271B 内容可寻址磁性随机访问存储器 Content addressable magnetic random access memory
04/28/2010CN1491417B Programmable switch element and method for programming the transistor to programmable switch
04/28/2010CN1455414B Resistance crosspoint storage unit array having cross-coupling latch reading amplifier
04/28/2010CN1384503B Magnetic resistance element, memory unit with the element and memory constituted by the memory units
04/28/2010CN101699627A Nonvolatile storage array and preparation method thereof
04/28/2010CN101699562A Erasing and writing method of phase change memory
04/28/2010CN101002279B Semiconductor device and method for writing data in semiconductor device
04/27/2010US7707355 Memory system for selectively transmitting command and address signals
04/27/2010US7707330 Memories for electronic systems
04/27/2010US7706209 Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operation
04/27/2010US7706205 Static memory cell having independent data holding voltage
04/27/2010US7706185 Reading circuitry in memory
04/27/2010US7706181 Multi-bit programming device and method using single-bit memory cells
04/27/2010US7706179 Three dimensional magnetic memory and/or recording device
04/27/2010US7706178 Programmable matrix array with phase-change material
04/27/2010US7706177 Method of programming cross-point diode memory array
04/27/2010US7706176 Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module
04/27/2010US7706175 Magnetic random access memory and method of manufacturing the same
04/27/2010US7706174 Static random access memory
04/27/2010US7706173 Memory macro composed of a plurality of memory cells
04/27/2010US7706172 Layout of a SRAM memory cell
04/27/2010US7706171 Storage device
04/27/2010US7706170 Compact and highly efficient DRAM cell
04/27/2010US7706169 Large capacity one-time programmable memory cell using metal oxides
04/27/2010US7706168 Erase, programming and leakage characteristics of a resistive memory device
04/27/2010US7706167 Resistance change memory device
04/27/2010US7705424 Phase change memory
04/27/2010US7705395 Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cell
04/27/2010US7704825 Method of fabricating memory including diode
04/27/2010US7703910 Print roll unit incorporating pinch rollers
04/22/2010WO2010044993A1 Multi-pass programming for memory using word line coupling
04/22/2010US20100097868 Distributed write data drivers for burst access memories
04/22/2010US20100097853 Jeet memory cell
04/22/2010US20100097852 Mram diode array and access method
04/22/2010US20100097851 Method for programming a multilevel phase change memory device
04/22/2010US20100097850 Apparatus and systems using phase change memories
04/22/2010US20100097849 Variable resistance memory device performing program and verification operation
04/22/2010US20100097848 Information storage element and method of writing/reading information into/from information storage element
04/22/2010US20100097847 Information storage element and method of writing/reading information into/from information storage element
04/22/2010US20100097846 Magnetoresistive element and magnetic memory
04/22/2010US20100097845 Semiconductor storage device
04/22/2010US20100097844 Write-Assist SRAM Cell
04/22/2010US20100097843 Extraction of a binary code based on physical parameters of an integrated circuit
04/22/2010US20100097842 Resistance variable memory device programming multi-bit data
04/22/2010US20100097841 Multi-Stage Parallel Data Transfer
04/22/2010US20100097840 FRAM including a tunable gain amp as a local sense amp
04/22/2010US20100097839 High speed ferroelectric random access memory
04/22/2010US20100097835 4 f2 memory cell array
04/22/2010US20100097834 Tree-structure memory device
04/22/2010US20100097833 Phase change memory device
04/22/2010US20100097832 Nonvolatile semiconductor memory device
04/22/2010US20100096704 Suspended nanochannel transistor structure and method for fabricating the same
04/22/2010DE112008001409T5 Nichtflüchtiger Speicher mit hoher Zuverlässigkeit Non-volatile memory with high reliability
04/22/2010DE10316581B4 Integrierter Speicher mit einer Spannungsgeneratorschaltung zur Erzeugung einer Spannungsversorgung für einen Schreib-Lese-Verstärker Integrated memory having a voltage generating circuit for generating a supply voltage for a read-write amplifier
04/22/2010DE10236696B4 Taktsynchrone Halbleiterspeichervorrichtung Synchronous semiconductor memory device
04/22/2010DE102008050056A1 Integrated circuit i.e. dynamic RAM, has signal counter to count number of signals provided to signal input, and determination block determining number of required voltage generators depending on counted number of signals
04/22/2010DE102008004510B4 Integrierte Schaltung Integrated circuit
04/22/2010DE102004063583B4 Nichtflüchtige Speichervorrichtung A non-volatile memory device
04/22/2010DE10020554B4 Halbleiterspeicherbauelement mit Spaltenauswahlschaltung und Aufbauverfahren hierfür A semiconductor memory device comprising column selection circuit structure and method therefor
04/21/2010EP2178212A1 Logical element
04/21/2010EP2176765A2 Coarse and fine programming in a solid state memory
04/21/2010EP1751762B1 Automatic hidden refresh in a dram and method therefor
04/21/2010CN1990910B Film forming apparatus and its operating method
04/21/2010CN1783334B Magnetic memory and method of manufacturing the same
04/21/2010CN1734671B Phase change memories and/or methods of programming phase change memories using sequential reset control
04/21/2010CN1652250B Redundancy relieving circuit
04/21/2010CN101697487A Analog/digital control delay locked loop
04/21/2010CN101197423B Method for making a self-converged memory material element for memory cell
04/21/2010CN101185141B Semiconductor storage apparatus and semiconductor integrated circuit incorporating the same
04/21/2010CN101159162B Memory system and its operation method