Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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04/29/2010 | US20100103722 Method of programming resistivity changing memory |
04/29/2010 | US20100103721 Heater and memory cell, memory device and recording head including the heater |
04/29/2010 | US20100103720 Biosensor and sensing cell array using the same |
04/29/2010 | US20100103719 Two-Stage 8T SRAM Cell Design |
04/29/2010 | US20100103718 Semiconductor memory device |
04/29/2010 | US20100103717 Tuning a variable resistance of a resistive sense element |
04/29/2010 | US20100103716 Non-Volatile Memory with Metal-Polymer Bi-Layer |
04/29/2010 | US20100103715 Semiconductor storage device and method of operating the same |
04/29/2010 | US20100103714 Semiconductor storage device |
04/29/2010 | US20100102306 Multi-level memory cell and manufacturing method thereof |
04/29/2010 | DE102006059743B4 Verfahren zum Trimmen eines Parameters eines Halbleiter-Bauelements A method for trimming a parameter of a semiconductor device |
04/29/2010 | DE10155424B4 Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems einer digitalen magnetischen Speicherzelleneinrichtung A method for homogeneous magnetization of a layer exchange coupled system of a digital magnetic memory cell device |
04/29/2010 | DE10121649B4 Auswahlsignal-Erzeugungsschaltung mit einer Klemmschaltung zum Klemmen von Auswahlsignalen beim Einschalten Selection signal generating circuit with a clamp circuit for clamping of selection signals when switching |
04/28/2010 | EP2179419A2 Secure storage of a codeword within an integrated circuit |
04/28/2010 | EP2179362A1 Memory system |
04/28/2010 | CN1784642B Chalcogenide constant current device,and its method of fabrication and operation |
04/28/2010 | CN1744320B Semiconductor device and method for manufacturing the same |
04/28/2010 | CN1729537B Magnetoresistive random access memory with reduced switching field |
04/28/2010 | CN1717662B Memory module, memory system, and information device |
04/28/2010 | CN1716445B Semiconductor integrated circuit |
04/28/2010 | CN1695200B Semiconductor memory |
04/28/2010 | CN1674144B Semiconductor memory device and reading out method for redundancy remedial address |
04/28/2010 | CN1666289B Balanced load memory and method of operation |
04/28/2010 | CN1638224B Semiconductor device and semiconductor device module |
04/28/2010 | CN1578988B Error management for writable tracking storage units storing reference values |
04/28/2010 | CN1574999B 信息处理装置 The information processing apparatus |
04/28/2010 | CN1558423B 半导体存储器 Semiconductor memory |
04/28/2010 | CN1538453B Booster power circuit |
04/28/2010 | CN1535467B Memory device, method for manufacturing memory device and method for programming the memory device |
04/28/2010 | CN1527322B Clock synchronizing semiconductor memory equipment |
04/28/2010 | CN1524271B 内容可寻址磁性随机访问存储器 Content addressable magnetic random access memory |
04/28/2010 | CN1491417B Programmable switch element and method for programming the transistor to programmable switch |
04/28/2010 | CN1455414B Resistance crosspoint storage unit array having cross-coupling latch reading amplifier |
04/28/2010 | CN1384503B Magnetic resistance element, memory unit with the element and memory constituted by the memory units |
04/28/2010 | CN101699627A Nonvolatile storage array and preparation method thereof |
04/28/2010 | CN101699562A Erasing and writing method of phase change memory |
04/28/2010 | CN101002279B Semiconductor device and method for writing data in semiconductor device |
04/27/2010 | US7707355 Memory system for selectively transmitting command and address signals |
04/27/2010 | US7707330 Memories for electronic systems |
04/27/2010 | US7706209 Semiconductor memory device capable of driving non-selected word lines to a variable negative potential based on a bank access operation |
04/27/2010 | US7706205 Static memory cell having independent data holding voltage |
04/27/2010 | US7706185 Reading circuitry in memory |
04/27/2010 | US7706181 Multi-bit programming device and method using single-bit memory cells |
04/27/2010 | US7706179 Three dimensional magnetic memory and/or recording device |
04/27/2010 | US7706178 Programmable matrix array with phase-change material |
04/27/2010 | US7706177 Method of programming cross-point diode memory array |
04/27/2010 | US7706176 Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module |
04/27/2010 | US7706175 Magnetic random access memory and method of manufacturing the same |
04/27/2010 | US7706174 Static random access memory |
04/27/2010 | US7706173 Memory macro composed of a plurality of memory cells |
04/27/2010 | US7706172 Layout of a SRAM memory cell |
04/27/2010 | US7706171 Storage device |
04/27/2010 | US7706170 Compact and highly efficient DRAM cell |
04/27/2010 | US7706169 Large capacity one-time programmable memory cell using metal oxides |
04/27/2010 | US7706168 Erase, programming and leakage characteristics of a resistive memory device |
04/27/2010 | US7706167 Resistance change memory device |
04/27/2010 | US7705424 Phase change memory |
04/27/2010 | US7705395 Flash memory cell and method of manufacturing the same and programming/erasing reading method of flash memory cell |
04/27/2010 | US7704825 Method of fabricating memory including diode |
04/27/2010 | US7703910 Print roll unit incorporating pinch rollers |
04/22/2010 | WO2010044993A1 Multi-pass programming for memory using word line coupling |
04/22/2010 | US20100097868 Distributed write data drivers for burst access memories |
04/22/2010 | US20100097853 Jeet memory cell |
04/22/2010 | US20100097852 Mram diode array and access method |
04/22/2010 | US20100097851 Method for programming a multilevel phase change memory device |
04/22/2010 | US20100097850 Apparatus and systems using phase change memories |
04/22/2010 | US20100097849 Variable resistance memory device performing program and verification operation |
04/22/2010 | US20100097848 Information storage element and method of writing/reading information into/from information storage element |
04/22/2010 | US20100097847 Information storage element and method of writing/reading information into/from information storage element |
04/22/2010 | US20100097846 Magnetoresistive element and magnetic memory |
04/22/2010 | US20100097845 Semiconductor storage device |
04/22/2010 | US20100097844 Write-Assist SRAM Cell |
04/22/2010 | US20100097843 Extraction of a binary code based on physical parameters of an integrated circuit |
04/22/2010 | US20100097842 Resistance variable memory device programming multi-bit data |
04/22/2010 | US20100097841 Multi-Stage Parallel Data Transfer |
04/22/2010 | US20100097840 FRAM including a tunable gain amp as a local sense amp |
04/22/2010 | US20100097839 High speed ferroelectric random access memory |
04/22/2010 | US20100097835 4 f2 memory cell array |
04/22/2010 | US20100097834 Tree-structure memory device |
04/22/2010 | US20100097833 Phase change memory device |
04/22/2010 | US20100097832 Nonvolatile semiconductor memory device |
04/22/2010 | US20100096704 Suspended nanochannel transistor structure and method for fabricating the same |
04/22/2010 | DE112008001409T5 Nichtflüchtiger Speicher mit hoher Zuverlässigkeit Non-volatile memory with high reliability |
04/22/2010 | DE10316581B4 Integrierter Speicher mit einer Spannungsgeneratorschaltung zur Erzeugung einer Spannungsversorgung für einen Schreib-Lese-Verstärker Integrated memory having a voltage generating circuit for generating a supply voltage for a read-write amplifier |
04/22/2010 | DE10236696B4 Taktsynchrone Halbleiterspeichervorrichtung Synchronous semiconductor memory device |
04/22/2010 | DE102008050056A1 Integrated circuit i.e. dynamic RAM, has signal counter to count number of signals provided to signal input, and determination block determining number of required voltage generators depending on counted number of signals |
04/22/2010 | DE102008004510B4 Integrierte Schaltung Integrated circuit |
04/22/2010 | DE102004063583B4 Nichtflüchtige Speichervorrichtung A non-volatile memory device |
04/22/2010 | DE10020554B4 Halbleiterspeicherbauelement mit Spaltenauswahlschaltung und Aufbauverfahren hierfür A semiconductor memory device comprising column selection circuit structure and method therefor |
04/21/2010 | EP2178212A1 Logical element |
04/21/2010 | EP2176765A2 Coarse and fine programming in a solid state memory |
04/21/2010 | EP1751762B1 Automatic hidden refresh in a dram and method therefor |
04/21/2010 | CN1990910B Film forming apparatus and its operating method |
04/21/2010 | CN1783334B Magnetic memory and method of manufacturing the same |
04/21/2010 | CN1734671B Phase change memories and/or methods of programming phase change memories using sequential reset control |
04/21/2010 | CN1652250B Redundancy relieving circuit |
04/21/2010 | CN101697487A Analog/digital control delay locked loop |
04/21/2010 | CN101197423B Method for making a self-converged memory material element for memory cell |
04/21/2010 | CN101185141B Semiconductor storage apparatus and semiconductor integrated circuit incorporating the same |
04/21/2010 | CN101159162B Memory system and its operation method |