Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2009
12/16/2009CN100570746C Method for implementing table looking-up controller in dynamic memory
12/16/2009CN100570745C Storage integrate circuit
12/16/2009CN100570744C Magnetic memory unit and method for writing data
12/16/2009CN100570743C Single wafer magnetic resistance type memory
12/16/2009CN100570741C Memory cell access circuit
12/16/2009CN100570740C Semiconductor memory device
12/16/2009CN100570739C Method and system for hiding refreshes in a dynamic random access memory
12/15/2009US7633827 Semiconductor memory device, operational processing device and storage system
12/15/2009US7633811 Non-volatile memory embedded in a conventional logic process and methods for operating same
12/15/2009US7633810 Non-volatile memory embedded in a conventional logic process and methods for operating same
12/15/2009US7633809 Semiconductor device
12/15/2009US7633808 Flash memories with adaptive reference voltages
12/15/2009US7633807 Behavior based programming of non-volatile memory
12/15/2009US7633805 Circuit and method for generating a reference voltage in memory devices having a non-volatile cell matrix
12/15/2009US7633802 Non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
12/15/2009US7633801 Memory in logic cell
12/15/2009US7633800 Redundancy scheme in memory
12/15/2009US7633796 Storage element and memory
12/15/2009US7633795 Magnetoresistive random access memory and its write control method
12/15/2009US7633794 Static random access memory cell
12/15/2009US7633793 Static random access memory cell
12/15/2009US7633792 Static random access memory cell
12/15/2009US7633791 Read-write circuit for short bit line DRAM
12/15/2009US7633790 Multi-resistive state memory device with conductive oxide electrodes
12/15/2009US7633789 Planar third dimensional memory with multi-port access
12/15/2009US7633788 Variable resistive memory wordline switch
12/15/2009US7633723 Tunnel junction device having oxide ferromagnetic electroconductive electrodes and three-layer structure tunneling film
12/15/2009US7633699 CPP reader with phase detection of magnetic resonance for read-back
12/15/2009US7633470 Driver circuit, as for an OLED display
12/15/2009US7633147 Semiconductor unit having two device terminals for every one input/output signal
12/15/2009US7633132 Magnetic sensor and manufacturing method therefor
12/15/2009US7631966 Print roll for a camera having an internal printer
12/15/2009US7631957 Pusher actuation in a printhead chip for an inkjet printhead
12/15/2009US7631956 Ink jet printhead with glass nozzle chambers
12/10/2009WO2009148863A2 Memory systems and methods for controlling the timing of receiving read data
12/10/2009WO2009148533A1 Methods for fabricating gated lateral thyristor-based random access memory (gltram) cells
12/10/2009WO2009148532A1 Gated lateral thyristor-based random access memory (gltram) cells with separate read and write access transistors, memory devices and integrated circuits incorporating the same
12/10/2009WO2009127187A3 Apparatus and method for producing switchable temporary magnetism in oxidic materials by means of electrical fields
12/10/2009WO2005050676A9 Improved bit end design for pseudo spin valve (psv) devices
12/10/2009US20090307437 Multiport Memory Architecture, Devices and Systems Including the Same, and Methods of Using the Same
12/10/2009US20090307414 Memory system, memory system control method, and drive recorder apparatus
12/10/2009US20090307410 Memory controller
12/10/2009US20090305487 Non-volatile resistance switching memory
12/10/2009US20090303807 Semiconductor device and semiconductor system having the same
12/10/2009US20090303800 Non-volatile memory control circuit
12/10/2009US20090303798 Memory device and method
12/10/2009US20090303794 Structure and Method of A Field-Enhanced Charge Trapping-DRAM
12/10/2009US20090303791 Semiconductor Memory Device for Storing Multivalued Data
12/10/2009US20090303787 Nonvolatile memories with tunnel dielectric with chlorine
12/10/2009US20090303786 Switch array circuit and system using programmable via structures with phase change materials
12/10/2009US20090303785 Phase change memory devices and read methods using elapsed time-based read voltages
12/10/2009US20090303784 Asymetric threshold three terminal switching device
12/10/2009US20090303783 Thin film input/output
12/10/2009US20090303782 Standalone thin film memory
12/10/2009US20090303781 Method and apparatus for thin film memory
12/10/2009US20090303780 Integrated circuit including an array of diodes coupled to a layer of resistance changing material
12/10/2009US20090303779 Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents
12/10/2009US20090303778 Methods and Apparatus for Varying a Supply Voltage or Reference Voltage Using Independent Control of Diode Voltage in Asymmetrical Double-Gate Devices
12/10/2009US20090303777 Semiconductor memory device
12/10/2009US20090303776 Static random access memory cell
12/10/2009US20090303775 Static random access memory cell and devices using same
12/10/2009US20090303774 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
12/10/2009US20090303773 Multi-terminal reversibly switchable memory device
12/10/2009US20090303772 Two-Terminal Reversibly Switchable Memory Device
12/10/2009US20090303771 Radio frequency identification device initializing a memory using an offset voltage
12/10/2009US20090303286 Printhead For Wide Format High Resolution Printing
12/10/2009DE19933008B4 Auffrischsteuerungseinrichtung in einem Halbleiterspeicher Auffrischsteuerungseinrichtung in a semiconductor memory,
12/10/2009DE10220328B4 Schaltung zur Taktsignalerzeugung, zugehörige integrierte Schaltkreisbauelemente und Auffrischtaktsteuerverfahren Circuit for clock signal generation, associated integrated circuit devices and Auffrischtaktsteuerverfahren
12/10/2009DE102008026132A1 Durchlassstromeinstellung für Transistoren, die in dem gleichen aktiven Gebiet gebildet sind, durch lokales Hervorrufen unterschiedlicher lateraler Verformungspegel in dem aktiven Gebiet Forward current setting transistors that are formed in the same active region by local eliciting different lateral strain level in the active region
12/10/2009DE10149387B4 Halbleiterspeicherbauelement mit Wortleitungs-Niederspannungszufuhrleitungen A semiconductor memory device having wordline low voltage supply lines
12/09/2009EP2130229A1 Charge storage nanostructure
12/09/2009EP2130228A1 Capacitor-less floating-body volatile memory cell comprising a pass transistor and a vertical read/write enable transistor and manufacturing and programming methods thereof
12/09/2009EP2130206A1 Read disturb reduction circuit for spin transfer torque magnetoresistive random access memory
12/09/2009EP1552314B1 Sense amplifier with configurable voltage swing control
12/09/2009CN101601098A Monitor burn-in test device and monitor burn-in test method
12/09/2009CN101601095A Method for reducing charge loss in analog floating gate cell
12/09/2009CN101601094A Reading memory cells using multiple thresholds
12/09/2009CN101599530A Memory cell of resistive random access memory (RRAM) and preparation method thereof
12/09/2009CN101599529A Resistance ram device having a carbon nano-tube and method for manufacturing the same
12/09/2009CN101599301A Memory and memory-writing method
12/09/2009CN101599300A Static random-access memory with boosted voltages
12/09/2009CN101599294A Method for storing multiple virtual queues data based on FPGA
12/09/2009CN101598629A Photometric property detection device of portable rapid large-screen display
12/09/2009CN100568860C Apparatus for canceling intersymbol interference in semiconductor memory device and method thereof
12/09/2009CN100568569C Semiconductor structure and its manufacture method
12/09/2009CN100568392C Self boosting technique of non-volatile memory
12/09/2009CN100568388C Nonvolatile memory and driving method thereof
12/09/2009CN100568387C Static random access memorizer circuit and method for switching its performance
12/09/2009CN100568386C Semiconductor memory device with ability to adjust impedance of data output driver
12/09/2009CN100568385C Delay control circuit and delay control method
12/09/2009CN100568384C Methods of activating word line segments enabled by row addresses and semiconductor memory devices
12/09/2009CN100568383C A high speed DRAM architecture with uniform access execution time
12/09/2009CN100568378C Integrate circuit memory and method for refreshing memory
12/09/2009CN100568334C Display device
12/08/2009US7630375 Data transfer control device and electronic instrument having reduced power consumption
12/08/2009US7630274 Circuit and method for selecting word line of semiconductor memory apparatus
12/08/2009US7630254 Starting program voltage shift with cycling of non-volatile memory
12/08/2009US7630252 Systems for programming multilevel cell nonvolatile memory
12/08/2009US7630251 Semiconductor memory device and method for erasing the same
12/08/2009US7630250 Controlled ramp rates for metal bitlines during write operations from high voltage driver for memory applications