Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2010
05/18/2010US7719068 Multi-bit electro-mechanical memory device and method of manufacturing the same
05/18/2010US7718988 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
05/18/2010US7718987 Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers
05/18/2010US7717543 Printhead including a looped heater element
05/14/2010WO2010053970A1 Word line voltage control in stt-mram
05/14/2010WO2010053955A1 Data protection during power-up in spin transfer torque magnetoresistive random access memory
05/14/2010WO2010053713A1 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
05/14/2010WO2010053383A1 Optoelectronic components
05/14/2010WO2010052034A1 Memory device and method
05/14/2010WO2010051623A1 A bridging device having a configurable virtual page size
05/13/2010US20100118609 Nonvolatile semiconductor memory, and method for reading data
05/13/2010US20100118607 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell
05/13/2010US20100118603 Device and method of programming a magnetic memory element
05/13/2010US20100118602 Double source line-based memory array and memory cells thereof
05/13/2010US20100118601 Phase change random access memory device
05/13/2010US20100118600 Magnetoresistive element
05/13/2010US20100118599 Process for forming both split gate and common gate finfet transistors and integrated circuits therefrom
05/13/2010US20100118598 Phosphonium Ionic Liquids, Compositions, Methods of Making and Electronic Devices Formed There From
05/13/2010US20100118597 Multiple valued dynamic random access memory cell and thereof array using single electron transistor
05/13/2010US20100118596 Embedded DRAM with bias-independent capacitance
05/13/2010US20100118595 Resistance variable memory devices and read methods thereof
05/13/2010US20100118594 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
05/13/2010US20100118593 Variable resistance memory device and system thereof
05/13/2010US20100118592 Nonvolatile semiconductor memory device and method of controlling the same
05/13/2010US20100118591 Semiconductor integrated circuit
05/13/2010US20100118590 Bidirectional Non-Volatile Memory Array Architecture
05/13/2010US20100118589 Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device
05/13/2010US20100118588 Voltage reference generation for resistive sense memory cells
05/13/2010US20100118587 Resistive sense memory array with partial block update capability
05/13/2010US20100118586 Ferroelectric memory
05/13/2010US20100118585 High density spin torque three dimensional (3d) memory arrays addressed with microwave current
05/13/2010US20100118583 Magetic shift register and data accessing method
05/13/2010US20100118581 Magnetic memory device
05/13/2010US20100118579 Nand Based Resistive Sense Memory Cell Architecture
05/13/2010US20100117043 Phase change memory device and method for manufacturing the same
05/12/2010EP2184381A1 Dry etching method for magnetic material
05/12/2010EP2184380A1 Dry etching method for magnetic material
05/12/2010DE102008050762A1 Shifting sequence electronic component for data storage and electronic switching element of integrated circuit, has dielectric layer between semiconducting or metallically conductive layers
05/12/2010CN201465572U Mistake-proof read-write memory
05/12/2010CN201465564U Device for fast programming NAND flash
05/12/2010CN1967896B Insulated phase change memory device and method for manufacturing the same
05/12/2010CN1963946B Non-volatile memory device
05/12/2010CN1945740B Phase change memory device using magnetic resistance effect and methods of manufacturing and operating the same
05/12/2010CN1945732B Delay locked loop for high speed semiconductor memory device
05/12/2010CN1941633B Delay locked loop
05/12/2010CN1941196B Semiconductor memory device
05/12/2010CN1941192B Multi-port memory device with serial input/output interface
05/12/2010CN1941175B Storage element and memory
05/12/2010CN1937078B Multi-operation mode nonvolatile memory
05/12/2010CN1909109B Method for switching magnetic moment in magnetoresistive random access memory with low current
05/12/2010CN1897156B Phase change random access memory (PRAM) device having variable drive voltages
05/12/2010CN1892904B Semiconductor memory device
05/12/2010CN1862705B Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory
05/12/2010CN1848299B Reference current generating circuit of nonvolatile semiconductor memory device
05/12/2010CN1801390B magnetic resistance type random access memory and manufacture method thereof
05/12/2010CN1783335B Storage unit
05/12/2010CN1767059B Method for measuring offset voltage of sense amplifier, and semiconductor device
05/12/2010CN1764983B System and method for programming cells in non-volatile integrated memory devices
05/12/2010CN1747062B Semiconductor memory device
05/12/2010CN1690721B Circuit and method for high speed sensing
05/12/2010CN1684195B High voltage generating circuit preserving charge pumping efficiency
05/12/2010CN1637927B Magnetic random access memory (MRAM) and method of manufacturing the same
05/12/2010CN1612265B 半导体存储设备 The semiconductor memory device
05/12/2010CN1607607B Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
05/12/2010CN1527323B Semiconductor memory device and semiconductor device carried with the same and logic circuit device
05/12/2010CN1385860B Film magnet memory with magnetic tunnel junction
05/12/2010CN1381847B 半导体存储器装置 The semiconductor memory device
05/12/2010CN101192447B Dram
05/12/2010CN101178927B Multi-stable sensing amplifier applied to memory
05/12/2010CN101030623B Non-volatile memory device having two oxide layers
05/12/2010CN101000821B Close-shaped magnetic multi-layer film and preparation method and use thereof
05/11/2010USRE41325 Dual port random-access-memory circuitry
05/11/2010US7716538 Memory with cell population distribution assisted read margining
05/11/2010US7716401 Memory module capable of improving the integrity of signals transmitted through a data bus and a command/address bus, and a memory system including the same
05/11/2010US7716098 Method and apparatus for reducing optical emissions in an integrated circuit
05/11/2010US7715256 Active termination circuit and method for controlling the impedance of external integrated circuit terminals
05/11/2010US7715240 Circuit and method of generating high voltage for programming operation of flash memory device
05/11/2010US7715238 Method of operating non-volatile memory device
05/11/2010US7715236 Fault tolerant non volatile memories and methods
05/11/2010US7715232 Method of determining a flag state of a non-volatile memory device
05/11/2010US7715231 Flash memory device having multi-level cell and reading and programming method thereof
05/11/2010US7715229 Memory device
05/11/2010US7715228 Cross-point magnetoresistive memory
05/11/2010US7715227 Programmable ROM using two bonded strata
05/11/2010US7715226 Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functions
05/11/2010US7715225 Memory cell using spin induced switching effects
05/11/2010US7715224 MRAM with enhanced programming margin
05/11/2010US7715223 Semiconductor integrated circuit device
05/11/2010US7715222 Configurable SRAM system and method
05/11/2010US7715221 Apparatus for implementing domino SRAM leakage current reduction
05/11/2010US7715220 Memory apparatus
05/11/2010US7714889 Digital camera using exposure information for image processing
05/11/2010US7714395 Static random access memory and fabricating method thereof
05/11/2010US7714311 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
05/11/2010US7712872 Inkjet nozzle arrangement with a stacked capacitive actuator
05/06/2010WO2010050093A1 Disc recording/reproduction device
05/06/2010WO2010049864A2 Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric mim capacitors
05/06/2010WO2010048681A1 Seal for toner cartridges, copiers and fax machines
05/06/2010US20100115192 Wear leveling method for non-volatile memory device having single and multi level memory cell blocks
05/06/2010US20100115176 Data transfer and programming in a memory device
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