Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2010
07/28/2010CN101790762A CMOS sram/rom unified bit cell
07/28/2010CN101789490A Ferroelectric oxide/semiconductor composite film diode resistance change memory
07/28/2010CN101789366A Field-by-field laser annealing and feed forward process control
07/28/2010CN101789261A Semiconductor memory circuit and control method for reading data
07/28/2010CN101789260A Epitaxial strain ferroelectric film for ferroelectric memory and method for regulating and controlling strain thereof
07/28/2010CN101261877B Semiconductor memory
07/27/2010USRE41456 Multi-state EEPROM having write-verify control circuit
07/27/2010US7764581 Write-once optical disc, and method and apparatus for allocating spare area on write-once optical disc
07/27/2010US7764566 Driver, and a semiconductor memory device having the same
07/27/2010US7764560 Semiconductor memory device and refresh method for the same
07/27/2010US7764559 Semiconductor memory device, refresh control method thereof, and test method thereof
07/27/2010US7764549 Floating body memory cell system and method of manufacture
07/27/2010US7764544 All-bit-line erase verify and soft program verify
07/27/2010US7764541 Method and apparatus for hot carrier programmed one time programmable (OTP) memory
07/27/2010US7764540 Semiconductor memory device
07/27/2010US7764539 Spin transfer MRAM device with separated CPP assisted writing
07/27/2010US7764538 Magnetic memory and method for writing to magnetic memory
07/27/2010US7764537 Spin transfer torque magnetoresistive random access memory and design methods
07/27/2010US7764536 Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory
07/27/2010US7764534 Two terminal nonvolatile memory using gate controlled diode elements
07/27/2010US7764533 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition
07/27/2010US7764532 High speed OTP sensing scheme
07/22/2010WO2010083411A1 Dynamic leakage control for memory arrays
07/22/2010WO2010083233A1 Magnetic element with storage layer materials
07/22/2010WO2010083023A1 A novel free lyer/capping layer for high performance mram mt j
07/22/2010WO2010048245A9 Read assist for memory circuits
07/22/2010US20100185890 Synchronous global controller for enhanced pipelining
07/22/2010US20100182853 Semiconductor Memory Device Having a Floating Storage Bulk Region Capable of Holding/Emitting Excessive Majority Carriers
07/22/2010US20100182847 Nonvolatile memory system, semiconductor memory and writing method
07/22/2010US20100182837 Magnetic floating gate memory
07/22/2010US20100182831 Non-Volatile Memory And Method With Reduced Neighboring Field Errors
07/22/2010US20100182829 Semiconductor memory device
07/22/2010US20100182828 Semiconductor storage device
07/22/2010US20100182827 High Margin Multilevel Phase-Change Memory via Pulse Width Programming
07/22/2010US20100182826 Reduction of Drift in Phase-Change Memory via Thermally-Managed Programming
07/22/2010US20100182825 Programmable resistance memory
07/22/2010US20100182824 Magnetic random access memory
07/22/2010US20100182823 Low Leakage High Performance Static Random Access Memory Cell Using Dual-Technology Transistors
07/22/2010US20100182822 Device and method for using dynamic cell plate sensing in a dram memory cell
07/22/2010US20100182821 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/22/2010US20100182820 Variable resistance memory device
07/22/2010US20100182379 Fluid-ejecting integrated circuit utilizing electromagnetic displacement
07/22/2010US20100181657 Nonvolatile memory cell comprising a reduced height vertical diode
07/22/2010US20100181632 Magnetic tunnel junction device and memory device including the same
07/22/2010DE112008002553T5 Einsatz eines MLC-Flash als SLC durch Schreiben von Dummy-Daten Use of MLC flash as SLC by writing dummy data
07/22/2010DE10330072B4 Zellen eines dynamischen Speichers mit wahlfreiem Zugriff mit seitlich versetzten Speicherknoten und Verfahren zu ihrer Herstellung Cells of a dynamic random access memory with laterally offset storage node and methods for their preparation
07/21/2010EP2209123A1 Magnetoresistive memory
07/21/2010EP2208201A1 Sram memory cell equipped with transistors having a vertical multi-channel structure
07/21/2010EP2208163A1 Method for controlling a pre-charge process and a respective integrated circuit
07/21/2010EP2078303B1 Reading of a nonvolatile memory cell by taking account of the stored state of a neighboring memory cell
07/21/2010EP2022058B1 Maintenance operations for multi-level data storage cells
07/21/2010EP1849161B1 Register read for volatile memory
07/21/2010EP1733398B1 Circuit for accessing a chalcogenide memory array
07/21/2010CN1945737B Semiconductor device with latency counter
07/21/2010CN101785064A Semiconductor storage device
07/21/2010CN101783390A Memory cell having improved mechanical stability and manufacturing method thereof
07/21/2010CN101783389A Resistive random access memory with asymmetric electrical properties
07/21/2010CN101783388A Non-volatile resistor change type memory with self-rectification effect
07/21/2010CN101783356A Semiconductor memory structures
07/21/2010CN101783172A Phase change memory
07/21/2010CN101783171A Burst write method for phase change memory
07/21/2010CN101783170A Circuit and method for driving resistive random access memory to realize multi-valued storage
07/21/2010CN101783169A Memory circuits and routing of conductive layers thereof
07/21/2010CN101783168A Semiconductor integrated circuit device and operating method thereof
07/21/2010CN101783167A Semiconductor memory device implementing full-vdd bitline precharge scheme usig bitline sense amplifier
07/21/2010CN101783166A Nonvolatile magnetic memory device
07/21/2010CN101393964B Phase change memory with various grain sizes and forming method thereof
07/21/2010CN101393963B Single crystalline NaCl barrier magnetic tunnel junction and use therefor
07/21/2010CN101383337B Programmable phase change material structure and its forming method
07/21/2010CN101364634B Semiconductor device
07/21/2010CN101355030B Method for manufacturing memory, memory device as well as method for operating and accessing the memory device
07/21/2010CN101295763B Resistive memory device and stack structure of resistive random access memory device
07/21/2010CN101188140B Resistive memory including bipolar transistor access devices and its manufacture method
07/20/2010US7761681 Data storage system with persistent volatile memory across power failures
07/20/2010US7760568 Memory sensing and latching circuit
07/20/2010US7760564 Non-volatile memory structure
07/20/2010US7760556 Data path circuit in a flash memory device
07/20/2010US7760555 Tracking cells for a memory system
07/20/2010US7760553 Fuse circuit and flash memory device having the same
07/20/2010US7760552 Verification method for nonvolatile semiconductor memory device
07/20/2010US7760547 Offset non-volatile storage
07/20/2010US7760546 Integrated circuit including an electrode having an outer portion with greater resistivity
07/20/2010US7760545 Semiconductor memory device and programming method thereof
07/20/2010US7760544 Spin transfer MRAM device with separated CPP assisted writing
07/20/2010US7760543 Resistance change memory
07/20/2010US7760542 Spin-torque memory with unidirectional write scheme
07/20/2010US7760541 Functional float mode screen to test for leakage defects on SRAM bitlines
07/20/2010US7760540 Combination SRAM and NVSRAM semiconductor memory array
07/20/2010US7760539 Nonvolatile memory device
07/20/2010US7760538 Non-volatile SRAM cell
07/20/2010US7760532 Multi-bank memory
07/20/2010US7760474 Magnetic element utilizing free layer engineering
07/20/2010US7760235 Image manipulation method for camera
07/20/2010US7760196 Impulsive driving liquid crystal display and driving method thereof
07/20/2010US7759762 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
07/20/2010US7759750 Magnetic memory cell and random access memory
07/20/2010US7758166 Inkjet nozzle with paddle layer sandwiched between first and second wafers
07/15/2010WO2010081021A1 System and method to read and write data at a magnetic tunnel junction element
07/15/2010WO2010080921A2 Seu tolerant arbiter
07/15/2010WO2010080674A1 Sensing circuit and method with reduced susceptibility to spatial and temperature variations
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