Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
09/2010
09/07/2010US7791951 Methods of operating non-volatile memory device
09/07/2010US7791945 Semiconductor memory device including apparatus for detecting threshold voltage
09/07/2010US7791943 Nonvolatile semiconductor memory device
09/07/2010US7791941 Non-volatile SRAM cell
09/07/2010US7791938 MSB-based error correction for flash memory system
09/07/2010US7791937 Magnetic memory system using MRAM-sensor
09/07/2010US7791936 Multibit electro-mechanical memory device and method of manufacturing the same
09/07/2010US7791935 Method for driving a phase change memory device using various write conditions
09/07/2010US7791934 Method for driving multi-level data to a phase change memory device
09/07/2010US7791933 Optimized phase change write method
09/07/2010US7791932 Phase-change material layer and phase-change memory device including the phase-change material layer
09/07/2010US7791931 Current driven memory cells having enhanced current and enhanced current symmetry
09/07/2010US7791930 Magnetoresistive random access memory
09/07/2010US7791929 Magnetoresistive RAM and associated methods
09/07/2010US7791928 Design structure, structure and method of using asymmetric junction engineered SRAM pass gates
09/07/2010US7791927 Mis-transistor-based nonvolatile memory circuit with stable and enhanced performance
09/07/2010US7791926 SEU hardening circuit and method
09/07/2010US7791924 Memory device using abrupt metal-insulator transition and method of operating the same
09/07/2010US7791923 Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
09/07/2010US7791922 Semiconductor memory device
09/07/2010US7791920 Active shielding for a circuit comprising magnetically sensitive materials
09/07/2010US7791845 Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer
09/07/2010US7791610 Display device and display system using the same
09/07/2010US7791250 Method for ultra-fast controlling of a magnetic cell and related devices
09/07/2010US7791122 Semiconductor memory device
09/07/2010US7791109 Metal silicide alloy local interconnect
09/07/2010US7789501 Printing cartridge for a printer
09/02/2010WO2010097862A1 Semiconductor memory cells and manufacturing method therefor as well as semiconductor memory devices
09/02/2010WO2010097302A1 Memory reading method taking care of resistance drift effects
09/02/2010WO2010096864A1 A system and method for allowing a ticket to be used at a plurality of venues
09/02/2010US20100223426 Variable-width memory
09/02/2010US20100220540 Semiconductor memory device capable of driving non-selected word lines to first and second potentials
09/02/2010US20100220537 Active termination circuit and method for controlling the impedance of external integrated circuit terminals
09/02/2010US20100220524 Magnetic booster for magnetic random access memory
09/02/2010US20100220523 Stochastic synapse memory element with spike-timing dependent plasticity (stdp)
09/02/2010US20100220522 Phase change random access memory and method of controlling read operation thereof
09/02/2010US20100220521 Phase change random access memory device and related methods of operation
09/02/2010US20100220520 Multi-bit phase change memory devices
09/02/2010US20100220519 Sensing Characteristic Evaluating Apparatus for Semiconductor Device and Method Thereof
09/02/2010US20100220518 Thermally assisted multi-bit mram
09/02/2010US20100220517 Semiconductor device
09/02/2010US20100220516 Reducing Source Loading Effect in Spin Torque Transfer Magnetoresisitive Random Access Memory (STT-MRAM)
09/02/2010US20100220515 Semiconductor memory device and test method therefor
09/02/2010US20100220514 Storage devices with soft processing
09/02/2010US20100220513 Bi-Directional Resistive Memory Devices and Related Memory Systems and Methods of Writing Data
09/02/2010US20100220512 Programmable power source using array of resistive sense memory cells
09/02/2010US20100219391 Layered resistance variable memory device and method of fabrication
09/01/2010EP2224508A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
09/01/2010EP2224477A1 Magnetic memory element, method for driving the magnetic memory element, and nonvolatile storage device
09/01/2010EP2224450A2 Memory device and method having data path with multiple prefetch I/O configurations
09/01/2010EP2223301A1 Non-volatile semiconductor memory device with power saving feature
09/01/2010EP1512150B1 Memory array having 2t memory cells
09/01/2010CN101821810A Nonvolatile sram/latch circuit using spin-injection magnetization reversal mtj
09/01/2010CN101819816A Phase change memory
09/01/2010CN101819815A Static random-access memory for eliminating reading interference
09/01/2010CN101819814A Sense amplifier and memory with same
09/01/2010CN101819813A Method and device for performing cache reading
09/01/2010CN101819812A Interleaved memory circuit and method of interleaving accesses thereof
09/01/2010CN101819811A Three-value FeRAM circuit
09/01/2010CN101506966B DRAM transistor with recessed gates and methods of fabricating the same
09/01/2010CN101233576B Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
09/01/2010CN101192646B Spinning moment transferring written magnetic random access memory and its manufacture method
09/01/2010CN101083300B Organic memory devices including organic material and fullerene layers and related methods
08/2010
08/31/2010US7787309 Method of operating integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
08/31/2010US7787307 Memory cell shift estimation method and apparatus
08/31/2010US7787304 Method of making integrated circuit embedded with non-volatile one-time-programmable and multiple-time programmable memory
08/31/2010US7787300 Memory devices with page buffer having dual registers and method of using the same
08/31/2010US7787298 Method for preventing memory from generating leakage current and memory thereof
08/31/2010US7787293 Semiconductor memory device
08/31/2010US7787292 Carbon nanotube fuse element
08/31/2010US7787291 Programming a multilevel phase change memory cell
08/31/2010US7787290 Semiconductor device
08/31/2010US7787289 MRAM design with local write conductors of reduced cross-sectional area
08/31/2010US7787288 Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory
08/31/2010US7787287 Magnetic storage device with curved interconnects
08/31/2010US7787286 SRAM memory with reference bias cell
08/31/2010US7787285 Independent-gate controlled asymmetrical memory cell and memory using the cell
08/31/2010US7787284 Integrated circuit chip with improved array stability
08/31/2010US7787283 Devices and methods for controlling active termination resistors in a memory system
08/31/2010US7787282 Sensing resistance variable memory
08/31/2010US7787281 Writing circuit for a phase change memory
08/31/2010US7787280 Electric element, memory device, and semiconductor integrated circuit
08/31/2010US7787279 Integrated circuit having a resistive memory
08/31/2010US7787277 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
08/31/2010US7786462 Chalcogenide devices exhibiting stable operation from the as-fabricated state
08/26/2010WO2010096768A1 Spin-transfer torque memory self-reference read method
08/26/2010WO2010096393A1 Memory architecture with a current controller and reduced power requirements
08/26/2010WO2010096232A1 Dynamic random access memory (dram) refresh
08/26/2010WO2010096097A1 Differential on-line termination
08/26/2010WO2010096096A1 Memory module including environmental optimization
08/26/2010WO2010095589A1 Magnetoresistive effect element and magnetic random access memory
08/26/2010WO2010079881A3 Domain wall movement memory device and an operating method therefor
08/26/2010WO2010078540A3 Spare block management in non-volatile memories
08/26/2010US20100218070 Lengthening life of a limited life memory
08/26/2010US20100217928 Semiconductor Memory Asynchronous Pipeline
08/26/2010US20100214852 Semiconductor memory device which stores plural data in a cell
08/26/2010US20100214842 Nonvolatile semiconductor memory including charge accumulation layer and control gate
08/26/2010US20100214838 Non-volatile semiconductor storage device
08/26/2010US20100214837 Nonvolatile semiconductor memory with charge storage layers and control gates
08/26/2010US20100214835 Magnetic shielding in magnetic multilayer structures
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