Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562)
12/2004
12/02/2004WO2004104276A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
12/02/2004US20040237882 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus
12/02/2004US20040237879 Single crystal silicon carbide and method for producing the same
11/2004
11/30/2004US6824609 Liquid phase growth method and liquid phase growth apparatus
11/25/2004US20040235671 Permanent current switch material and production method therefor
11/17/2004CN1547627A Substrate for forming magnetic garnet single crystal film, optical device, and its production method
11/17/2004CN1176253C Composite scintillation crystal material of cerium doped lutetium aluminate and yttrium aluminate and its preparing process
11/17/2004CN1176252C Method and device for restraining growth of artificial crystal
11/11/2004US20040224851 Substrate metal having a high melting temperature; at least one oxide intermediate layer, thick film oxide superconductor layer formed on the oxide intermediate layer; cables, magnets or wires; liquid phase epitaxial method
10/2004
10/28/2004US20040214450 Method of preparing oxide crystal film/substrate composite and solution for use therein
10/19/2004US6805745 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles
10/14/2004WO2004088734A1 Method of heat treatment and heat treatment apparatus
10/12/2004US6802900 Liquid phase growth methods and liquid phase growth apparatus
10/07/2004US20040197599 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electric circuit, and electronic apparatus
09/2004
09/16/2004US20040177801 Substrate for forming magnetic garnet single crystal film, optical device, and its production method
09/02/2004US20040171226 Isotopically pure silicon-on-insulator wafers and method of making same
09/02/2004US20040169225 Isotopically pure silicon-on-insulator wafers and method of making same
08/2004
08/26/2004US20040166664 Thin film-structure and a method for producing the same
08/26/2004US20040166330 Thin film-structure and a method for producing the same
08/26/2004US20040164380 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device
08/12/2004WO2004067813A1 Substrate for forming magnetic garnet single-crystal film, optical device and process for producing the same
08/11/2004CN1519399A Method of mfg. monocrystal
08/05/2004US20040149201 Method for preparing single crystal
07/2004
07/29/2004US20040144650 Method of colloid crystal growth on patterned surfaces
07/29/2004US20040144300 Method of manufacturing group III nitride substrate and semiconductor device
07/29/2004CA2418138A1 Method of colloid crystal growth on patterned surfaces
07/28/2004CN1516293A Method for mfg. semiconductor structural component and method for mfg. solar cell
07/21/2004EP1439246A1 Silicon carbide and method for producing the same
07/14/2004EP1049820B9 Method for epitaxial growth on a substrate
07/14/2004CN1157766C Method for producing semiconductor substuate and solar cell
07/07/2004EP1435668A1 Permanent current switch material and production method therefor
07/06/2004US6759261 Thin film-structure and a method for producing the same
06/2004
06/30/2004CN1156027C Method of producing semiconductor member and method of producing solar cell
06/29/2004US6756289 Method of producing semiconductor member and method of producing solar cell
06/24/2004US20040118337 Method for growing silicon film, method for manufacturing solar cell, semiconductor substrate, and solar cell
06/24/2004US20040118336 Liquid-phase growth process and liquid-phase growth apparatus
06/23/2004EP1432015A2 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device
06/16/2004CN1154199C Magnetostatic wave element and its manufacturing method
06/01/2004US6743533 Oxide superconductor, manufacturing method thereof, and base substrate therefor
05/2004
05/26/2004CN1151543C Semiconductor device and its producing method
05/13/2004US20040092053 Transparent layer of a LED device and the method for growing the same
05/12/2004CN1495915A 光电转换元件 A photoelectric conversion element
04/2004
04/29/2004DE10007946B4 Verfahren und Vorrichtung zur Herstellung von Keramikschichten Method and device for producing ceramic layers
04/08/2004US20040065251 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal
03/2004
03/31/2004EP1403931A2 Method for growing a silicon film, method for manufacturing a solar cell, semiconductor substrate, and solar cell
03/31/2004EP1403404A1 Single crystal silicon carbide and method for producing the same
03/31/2004EP1403403A1 Substrate for forming magnetic garnet single crystal film, optical device, and its production method
03/25/2004WO2004025000A1 Thin sheet production apparatus and thin sheet production method
03/25/2004WO2004024999A1 Reactor for liquid phase epitaxy method
03/24/2004EP1400614A2 Process and apparatus for liquid phase epitaxy
03/23/2004US6709520 Reactor and method for chemical vapor deposition
03/18/2004US20040053433 Method for producing crystal thin plate and solar cell comprising crystal thin plate
03/18/2004DE10241703A1 Reactor for carrying liquid phase epitaxial growth on semiconductor substrates comprises a growing chamber having an intermediate storage region for temporarily storing melts and a growing region for holding a substrate
02/2004
02/25/2004EP1391543A1 METHOD FOR PREPARING OXIDE CRYSTAL FILM/SUBSTRATE COMPOSITE AND SOLUTION FOR USE THEREIN
02/19/2004WO2004015787A1 Long superconductor fabrication
02/12/2004WO2003052176A3 Method for making crystalline semiconductor substrates
02/12/2004US20040029737 Forming film using seed crystal; high temperature superconductivity
02/04/2004CN1472782A Method for preparing electric ferroelectric thick film by liquid phase epitaxy
01/2004
01/08/2004WO2004003264A1 Thin sheet manufacturing method, and thin sheet manufacturing apparatus
01/08/2004WO2004003263A1 Thin sheet manufacturing method, thin sheet manufacturing apparatus, and base sheet
01/08/2004WO2004003262A1 Thin sheet production method and thin sheet production device
01/07/2004CN1134047C Heterogeneous liquid-phase epitaxial growth process of magnetic semiconductor/semiconductor
01/06/2004US6673146 Having square hysteresis loop, rotator being formed of bismuth substituted rare earth iron garnet single crystal that has compensation temperature in range of 10 to 40 degrees c and is grown on non-magnetic garnet substrate by liquid phase epitaxy
12/2003
12/25/2003US20030234402 Transparent layer of a LED device and the method for growing the same
12/24/2003CN2594282Y Substrate chucking of liquid phase epitaxial growth membrane
12/18/2003US20030230231 Liquid-phase growth process and liquid-phase growth apparatus
12/10/2003CN1461359A Method for producing crystal thin plate and solar cell comprising crystal thin plate
12/09/2003US6660615 Method and apparatus for growing layer on one surface of wafer
11/2003
11/25/2003US6653658 Electrical and electronic structures having improved thermoconductivity, comprising doped layers on germanium, sapphire, silicon and/or carbide substrates; heat exchangers
11/20/2003US20030213427 Method of welding single crystals
10/2003
10/09/2003US20030188680 Liquid-phase growth method and liquid-phase growth apparatus
10/08/2003CN1446947A Method for preparing superconducting block material with thick film being as seed crystal fustion texture
10/02/2003US20030183159 Process for producing single crystal silicon wafers
10/02/2003US20030183154 Liquid-phase growth apparatus and method
10/01/2003EP1348781A1 Methode de croissance épitaxiale par irradiation avec un faisceau d'énergie
10/01/2003CN1445388A Method for preparing compound laser crystal of yttrium aluminate with neodymium adulterated and yttrium aluminate
09/2003
09/25/2003US20030177975 Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material
09/04/2003WO2003072500A1 Plate-shaped silicon manufacturing method, substrate for manufacturing plate-shaped silicon, plate-shaped silicon, solar cell using the plate-shaped silicon, and solar cell module
09/03/2003CN1439747A Liquid phase epitaxial growth of superconductive thick film material with overheated seed film as seed crystal
08/2003
08/20/2003EP1049820B1 Method for epitaxial growth on a substrate
08/06/2003EP1333111A1 Method for producing crystal thin plate and solar cell comprising crystal thin plate
07/2003
07/31/2003US20030140859 Apparatus for producing semiconductor thin films on moving substrates
07/22/2003US6596080 Silicon carbide and method for producing the same
07/09/2003CN1428464A Preparation method of chemical metering ratio lithium niobate monocrystal
06/2003
06/26/2003WO2003052176A2 Method for making crystalline semiconductor substrates
06/25/2003CN1425810A Process for preparing low temperature phase barium metaborate mono-crystal film
06/18/2003CN1424438A Substrate clamping devices for film growth by liquid phase extension
06/18/2003CN1424437A Preparation of Nd-Y-Al garnet dosed and Y-Al garnet composite laser crystals
05/2003
05/28/2003EP1314800A1 Method for preparing single crystal oxide thin film
05/20/2003US6566277 Liquid-phase growth method, liquid-phase growth apparatus, and solar cell
04/2003
04/22/2003US6551908 Method for producing semiconductor thin films on moving substrates
04/03/2003WO2003028120A1 Permanent current switch material and production method therefor
04/01/2003US6542299 Material for bismuth substituted garnet thick film and a manufacturing method thereof
03/2003
03/27/2003US20030060044 Liquid phase growth method and liquid phase growth apparatus
03/20/2003US20030054105 Film growth at low pressure mediated by liquid flux and induced by activated oxygen
03/06/2003US20030042578 Crystal growth process, semiconductor device, and its production process
02/2003
02/13/2003US20030029376 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles
02/11/2003US6518862 A magnetostatic wave element comprising a single crystal magnetic garnet film, wherein said film contains about 5 ppm or less by weight of Pb. A method for manufacturing a magnetostatic wave element having a single crystal magnetic
01/2003
01/16/2003WO2001068957A9 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
01/16/2003US20030013275 Isotopically pure silicon-on-insulator wafers and method of making same
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