| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 01/23/2014 | WO2014013305A2 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL BY USING THE PRODUCTION APPARATUS AND CRUCIBLE USED IN THE PRODUCTION APPARATUS |
| 01/22/2014 | CN103526291A Surface enhanced Raman scattering substrate, preparation method therefor and application thereof |
| 01/22/2014 | CN103526283A Method for preparing pure-a-axis-direction YBCO liquid phase epitaxy film |
| 01/22/2014 | CN103526282A Device and method for growing nitride single-crystal material |
| 01/22/2014 | CN103526281A Vertical type liquid phase epitaxial furnace |
| 01/15/2014 | CN103510155A Semiconductor crystal removal apparatus and production method for semiconductor crystal |
| 01/07/2014 | US8623137 Method and device for slicing a shaped silicon ingot using layer transfer |
| 01/01/2014 | CN102264955B Method of producing sic single crystal |
| 12/26/2013 | US20130344390 Synthesis and applications of graphene based nanomaterials |
| 12/19/2013 | WO2013188574A2 Multilayer substrate structure and method and system of manufacturing the same |
| 12/19/2013 | US20130333613 Method for surfactant crystal growth of a metal-nonmetal compound |
| 12/19/2013 | US20130333612 Photoalignment of materials including liquid crystals |
| 12/19/2013 | US20130333611 Lattice matching layer for use in a multilayer substrate structure |
| 12/18/2013 | EP2135979B1 Method for manufacturing nitride single crystal |
| 12/17/2013 | US8609059 Production method, production vessel and member for nitride crystal |
| 12/12/2013 | WO2013184189A2 Photoalignment of materials including liquid crystals |
| 12/12/2013 | WO2013183368A1 SiC SINGLE-CRYSTAL INGOT, SiC SINGLE CRYSTAL, AND PRODUCTION METHOD FOR SAME |
| 12/11/2013 | CN103436964A Long-wave indium-arsenic-antimony material and growing method thereof |
| 12/04/2013 | CN103429800A Method for producing gallium nitride layer and seed crystal substrate used in same |
| 11/28/2013 | WO2013175411A1 Method for forming an epitactic silicon layer |
| 11/27/2013 | CN102337586B Compound barium borofluoride nonlinear optical crystal as well as preparation method and purposes thereof |
| 11/20/2013 | CN103397382A Preparation method of zinc-oxide nanorod array film |
| 11/05/2013 | US8574532 Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystal |
| 11/05/2013 | US8574362 Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot |
| 10/31/2013 | WO2013161999A1 Holding body, crystal growing method, and crystal growing apparatus |
| 10/30/2013 | EP2657377A1 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
| 10/30/2013 | EP2657376A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
| 10/30/2013 | EP2657375A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 10/30/2013 | EP2657374A1 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 10/30/2013 | CN103380481A Making semiconductor bodies from molten material using a free-standing interposer sheet |
| 10/29/2013 | US8568532 Method for growing single crystal of group III metal nitride and reaction vessel for use in same |
| 10/24/2013 | WO2013157418A1 SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF |
| 10/22/2013 | US8562768 Solid compounds, self-sustaining combustion hydrogen generators containing borazane and/or polyaminoborane and at least one inorganic oxidant, and method for generating hydrogen |
| 10/17/2013 | US20130269597 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 10/17/2013 | US20130269596 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
| 10/10/2013 | US20130266727 Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography |
| 10/10/2013 | US20130263774 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
| 10/09/2013 | EP2647743A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 10/09/2013 | EP2647742A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 10/09/2013 | EP2647032A2 Making semiconductor bodies from molten material using a free-standing interposer sheet |
| 10/03/2013 | WO2013147326A1 Method for manufacturing group 13 element nitride crystal and solvent composition |
| 10/03/2013 | US20130255566 Method for making epitaxial structure |
| 10/03/2013 | US20130255565 Method for making epitaxial structure |
| 10/02/2013 | CN103339299A Article and method for forming large grain polycrystalline silicon films |
| 09/19/2013 | US20130244016 Ferroelectric thin film having superlattice structure, manufacturing method thereof, ferroelectric element, and manufacturing method thereof |
| 09/18/2013 | EP2639344A1 METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL |
| 09/12/2013 | US20130233238 Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth |
| 09/11/2013 | CN103290477A Liquid phase epitaxy device for preparing InAsSb films and method |
| 09/04/2013 | CN103282558A Device for producing sic single crystals, jig used in said production device, and method of producing sic single crystals |
| 09/04/2013 | CN103282557A Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 09/04/2013 | CN103282556A Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device |
| 08/28/2013 | EP2630278A2 Process for growing silicon carbide single crystal and device for the same |
| 08/28/2013 | CN103270203A Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide |
| 08/28/2013 | CN103270202A Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
| 08/28/2013 | CN103270201A Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
| 08/22/2013 | US20130216772 Film formed by secondary growth of seed crystals, three crystal axes of which had all been uniformly oriented on substrate |
| 08/21/2013 | EP2629320A2 Mask structure and method for defect-free heteroepitaxial deposition |
| 08/21/2013 | CN102203330B Manufacturing method for silicon carbide monocrystals |
| 08/14/2013 | CN203128690U Liquid-phase epitaxy graphite boat for growth of ultrathin epitaxial layer |
| 08/14/2013 | CN103243389A Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate |
| 08/08/2013 | US20130199438 METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATE |
| 08/07/2013 | CN103237931A Group 13 element nitride film and laminate thereof |
| 08/07/2013 | CN103233271A Method for epitaxial growth of InAs/GaSb type-II superlattice on GaAs substrate |
| 08/06/2013 | US8501141 Method for producing group III nitride semiconductor |
| 08/01/2013 | US20130192516 Method of preparing cast silicon by directional solidification |
| 07/31/2013 | CN103228826A Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 07/25/2013 | WO2013108567A1 Seed crystal isolating spindle for single crystal production device and method for producing single crystals |
| 07/25/2013 | WO2012075306A3 Making semiconductor bodies from molten material using a free-standing interposer sheet |
| 07/25/2013 | US20130187170 Method for producing aluminum nitride crystals |
| 07/25/2013 | US20130186326 GaN Whiskers and Methods of Growing Them from Solution |
| 07/24/2013 | CN203085624U Epitaxial growth substrate of semiconductor |
| 07/24/2013 | CN103221585A Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 07/18/2013 | WO2013105618A1 Method for producing group iii nitride crystals, group iii nitride crystals and semiconductor device |
| 07/18/2013 | WO2013105230A1 Method for producing silicon carbide semiconductor thin film |
| 07/17/2013 | CN103210127A Method for producing n-type SiC monocrystal |
| 06/27/2013 | US20130160699 Method of Manufacturing III-Nitride Crystal |
| 06/26/2013 | CN103180493A Process for growing silicon carbide single crystal and device for the same |
| 06/20/2013 | WO2013088948A1 METHOD FOR GROWING SiC CRYSTAL AND SiC CRYSTAL SUBSTRATE |
| 06/20/2013 | WO2013088947A1 METHOD FOR GROWING SiC CRYSTAL |
| 06/20/2013 | US20130152850 Method and apparatus for monitoring and controlling crystal growth, and probe system |
| 06/13/2013 | WO2013082772A1 Methods of producing cadmium selenide multi-pod nanocrystals |
| 06/12/2013 | CN103147129A Method for growing a crystalline composition comprising gallium nitride |
| 06/05/2013 | EP2598677A1 Mold shape to optimize thickness uniformity of silicon film |
| 06/05/2013 | CN103140612A Silicon ribbon, spherical silicon, solar cell, solar cell module, method for producing silicon ribbon, and method for producing spherical silicon |
| 05/30/2013 | US20130136918 Crystalline silicon ingot including nucleation promotion layer and method of fabricating the same |
| 05/29/2013 | CN102386073B Method for preparing InAsSb quantum dots |
| 05/22/2013 | EP2594666A1 Method for producing aluminum nitride crystals |
| 05/22/2013 | CN103114330A Method for attaching titanium dioxide one-dimensional array on porous aluminium mesh used for sewage treatment |
| 05/16/2013 | US20130118400 Method of forming epitaxial zinc oxide films |
| 05/16/2013 | US20130118399 Methods and systems relating to the selection of substrates comprising crystalline templates for the controlled crystallization of molecular species |
| 05/14/2013 | US8440017 Method for growing group 13 nitride crystal and group 13 nitride crystal |
| 05/10/2013 | WO2013065204A1 SiC SINGLE CRYSTAL MANUFACTURING METHOD |
| 05/08/2013 | CN103088410A Liquid-phase epitaxial graphite boat for growth of ultrathin epitaxial layer and growing method of ultrathin epitaxial layer |
| 05/02/2013 | WO2013062130A1 Method for producing crystal |
| 04/25/2013 | WO2013058350A1 Method for producing nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table produced by said production method |
| 04/25/2013 | WO2013056374A1 Piezoelectric materials and methods of property control |
| 04/25/2013 | CA2850232A1 Piezoelectric materials and methods of property control |
| 04/18/2013 | US20130095305 Graphene pattern and process of preparing the same |
| 04/18/2013 | US20130093290 Stylo-Epitaxial Piezoelectric and Ferroelectric Devices and Method of Manufacturing |
| 04/17/2013 | CN103052739A Method for producing aluminum nitride crystals |