| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 10/26/2006 | US20060236917 Method of forming conductive film and method of manufacturing electronic apparatus |
| 10/24/2006 | US7125801 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same |
| 10/24/2006 | US7125451 Crystal-structure-processed mechanical devices and methods and systems for making |
| 10/10/2006 | US7119400 Isotopically pure silicon-on-insulator wafers and method of making same |
| 10/10/2006 | US7118625 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal |
| 10/05/2006 | DE19904378B4 Verfahren zur Herstellung von Nitrid-Einkristallen A process for producing nitride crystals |
| 10/04/2006 | EP1706903A1 Isotopically pure silicon-on-insulator wafers and method of making same |
| 09/06/2006 | CN1828508A High-energy electron-diffraction diagram processing system and method |
| 08/23/2006 | EP1049813B1 Cvd reactor and process |
| 08/16/2006 | EP1690284A2 Method of production of silicon carbide single crystal |
| 07/20/2006 | US20060160336 Silicon layer production method and solar cell production method |
| 07/18/2006 | US7077901 Process for producing single crystal silicon wafers |
| 06/29/2006 | US20060137602 Preparation of iodixanol |
| 06/07/2006 | CN1783434A Liquid phase epitaxial growth method for growing indium-arsenic-antimony thin film on gallium-arenic substrate |
| 06/01/2006 | US20060112873 Magnetic garnet single crystal film formation substrate, optical element and production method of the same |
| 05/30/2006 | CA2423146C A method of welding single crystals |
| 05/26/2006 | WO2006054628A1 Magnetic garnet single crystal, optical device using same and method for producing single crystal |
| 05/23/2006 | US7048797 Liquid-phase growth process and liquid-phase growth apparatus |
| 05/17/2006 | CN1772973A Heat balance growing method for magnetic semiconductor gallium, manganese and antimony single crystal |
| 05/10/2006 | EP1654405A1 Device and method for treating a crystal by applying microdrops thereto |
| 05/04/2006 | US20060091393 Isotopically pure silicon-on-insulator wafers and methods of making same |
| 05/03/2006 | CN1768167A Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same |
| 05/03/2006 | CN1768166A Magnetic garnet single crystal film formation substrate, optical element and production method of the same |
| 04/27/2006 | US20060088713 Surface modification of nanocrystals using multidentate polymer ligands |
| 04/20/2006 | DE102004048453A1 Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze A method for increasing the conversion of group III metal to group III nitride in a group-III-containing molten metal |
| 04/13/2006 | WO2006037310A1 Method for the production of group iii nitride bulk crystals or crystal layers from fused metals |
| 04/13/2006 | DE102004048454A1 Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen A process for the production of group III-nitride bulk crystals or crystal layers of molten metal |
| 04/11/2006 | US7026696 Thin film-structure and a method for producing the same |
| 04/04/2006 | US7022181 Liquid phase growth process, liquid phase growth system and substrate member production method |
| 03/22/2006 | CN1246507C Method for suppressing hetero crystal forming and growing at seed crystal starting end, and casting case construction thereof |
| 03/21/2006 | US7014711 Liquid-phase growth apparatus and method |
| 03/16/2006 | US20060054078 Liquid-phase growth apparatus and method |
| 03/15/2006 | EP1634980A1 Method for producing group iii nitride single crystal and apparatus used therefor |
| 03/09/2006 | WO2006025420A1 Method for preparing silicon carbide single crystal |
| 03/09/2006 | US20060048698 Methods and systems for purifying elements |
| 03/08/2006 | CN1244724C Magnetic garnet monocrystal film and its preparation, and Faraday rotor using said monocrystal film |
| 03/02/2006 | WO2005065143A3 Isotopically pure silicon-on-insulator wafers and method of making same |
| 02/22/2006 | EP1627940A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 02/14/2006 | US6998286 Thin film-structure and a method for producing the same |
| 02/14/2006 | US6997986 Method for preparing single crystal |
| 01/19/2006 | DE10036672B4 GaAs-Flüssigphasenepitaxiewafer und Verfahren zum Herstellen desselben GaAs Flüssigphasenepitaxiewafer thereof and methods for preparing |
| 01/11/2006 | CN1236112C Method for preparing compound laser crystal of yttrium aluminate with neodymium adulterated and yttrium aluminate |
| 01/11/2006 | CN1236111C Method for preparing superconducting block material with thick film being as seed crystal fustion texture |
| 01/10/2006 | US6984265 Three dimensional array films |
| 12/14/2005 | CN1706994A Homoepitaxial superconductor lump material growing process with RE, Ba and Cu oxide film as crystal seed |
| 12/08/2005 | WO2005117079A1 Silicon layer production method and solar cell production method |
| 12/08/2005 | WO2005116305A1 Method for producing calcium fluoride crystal |
| 11/30/2005 | CN1229876C Method and device for manufacture of gallium phosphide luminous component |
| 11/16/2005 | EP1595979A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same |
| 11/16/2005 | CN1696356A Self-assembly method for developing film of zinc oxide through induction of seed crystal and liquid phase epitaxy in low temperature |
| 11/09/2005 | EP1593759A1 Substrate for forming magnetic garnet single-crystal film, optical device and process for producing the same |
| 11/05/2005 | CA2506388A1 Surface modification of nanocrystals using multidentate polymer ligands |
| 10/27/2005 | US20050239225 Thin sheet production method and thin sheet production device |
| 10/13/2005 | DE10117306B4 Verfahren zur Herstellung einer strukturierten Dünnschicht-Anordnung A method for producing a structured thin-film arrangement |
| 10/11/2005 | US6953506 Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same |
| 10/06/2005 | WO2005093795A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
| 10/06/2005 | CA2554408A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
| 10/04/2005 | US6951585 Liquid-phase growth method and liquid-phase growth apparatus |
| 10/04/2005 | US6951584 Apparatus for producing semiconductor thin films on moving substrates |
| 09/22/2005 | US20050205871 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
| 09/21/2005 | CN1670916A Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
| 09/21/2005 | CN1670269A Sliding mechanism of semiconductor material growing system |
| 09/07/2005 | CN1665968A Thin sheet production method and thin sheet production device |
| 09/07/2005 | CN1664179A Method of manufacturing group-III nitride crystal |
| 08/16/2005 | US6929695 Method for preparing single crystal oxide thin film |
| 08/04/2005 | WO2005071143A1 Process for producing single crystal of gallium-containing nitride |
| 07/28/2005 | US20050164419 Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device |
| 07/27/2005 | EP1557870A2 Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
| 07/21/2005 | WO2005067049A1 Isotopically pure silicon-on-insulator wafers and method of making same |
| 07/21/2005 | WO2005065143A2 Isotopically pure silicon-on-insulator wafers and method of making same |
| 07/14/2005 | WO2005064661A1 Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
| 07/14/2005 | US20050153471 Method of manufacturing group-III nitride crystal |
| 07/13/2005 | EP1553216A2 Method of manufacturing group-III nitride crystal |
| 06/23/2005 | WO2005056887A1 Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby |
| 06/22/2005 | CN1207449C Substrate clamping devices for film growth by liquid phase extension |
| 06/09/2005 | WO2005053003A2 Method of production of silicon carbide single crystal |
| 06/07/2005 | US6902617 Method of welding single crystals |
| 06/02/2005 | DE10392847T5 Verfahren und Vorrichtung zum Herstellen einer dünnen Lage Method and apparatus for producing a thin layer |
| 06/01/2005 | CN1622409A Zinc oxide bluish violet light semiconductor growth using liquid phase epitaxial method |
| 05/19/2005 | US20050103258 Epitaxial organic layered structure and method for making |
| 05/10/2005 | US6890781 Transparent layer of a LED device and the method for growing the same |
| 04/14/2005 | US20050076829 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
| 04/07/2005 | WO2005032217A1 Epitaxial organic layered structure and method for making |
| 04/05/2005 | US6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same |
| 03/29/2005 | US6872248 Liquid-phase growth process and liquid-phase growth apparatus |
| 03/17/2005 | US20050059229 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same |
| 03/15/2005 | US6867459 Isotopically pure silicon-on-insulator wafers and method of making same |
| 02/24/2005 | WO2005017236A1 Device and method for treating a crystal by applying microdrops thereto |
| 02/23/2005 | CN1585150A Growth of ferroelectric thick films with films as seeds by liquid phase epitaxy |
| 02/23/2005 | CN1190526C Liquid phase epitaxial growth superconductive thick film material with overheated seed film as seed crystal |
| 02/17/2005 | US20050034756 Method for forming a Si film, Si film and solar battery |
| 02/17/2005 | DE10334522A1 Process for the liquid phase epitaxial production of a semiconductor arrangement for producing IR emitters comprises epitaxially forming a semiconductor layer of a III-V compound semiconductor from a melt containing an arsenide dopant |
| 02/16/2005 | CN1189899C Method for making magnetic garnet monocrystal film and mangetic garnet monocrystal film with ununiform thickness |
| 02/09/2005 | EP1505179A1 Procedure for identifying weakly binding molecule fragments with ligand properties with the molecule fragments being applied to the crystal as micro-drops of a corresponding solution |
| 01/26/2005 | CN1570224A Method for suppressing stray crystal forming and growing at seed crystal starting end, and casting case construction thereof |
| 01/26/2005 | CN1186483C Preparation of Nd-Y-Al garnet dosed and Y-Al garnet composite laser crystals |
| 01/26/2005 | CN1186482C Process for preparing low temperature phase barium metaborate mono-crystal film |
| 01/25/2005 | US6846578 Method of colloid crystal growth on patterned surfaces |
| 01/20/2005 | US20050011432 Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device |
| 12/15/2004 | EP1487008A2 Method for forming a Si film, si film and solar battery |