Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562)
10/2009
10/22/2009US20090261345 Method for manufacturing compliant substrate, compliant substrate manufactured thereby, gallium nitride based compound semiconductor device having the compliant substrate and manufacturing method thereof
10/22/2009US20090261255 Fluorescent material, a method of manufacturing the fluorescent material, a radiation detector using the fluorescent material, and an X-ray CT scanner
10/14/2009CN101558188A Process for producing group iii elment nitride crystal, and group iii element nitride crystal
10/13/2009US7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites
10/08/2009US20090249999 Reusable crucibles and method of manufacturing them
10/01/2009WO2009119411A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same
09/2009
09/30/2009CN201317829Y Fixing device applied in liquid phase epitaxy of wafers
09/23/2009EP2103721A1 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS
09/16/2009EP2100989A1 Method for preparing substrate having monocrystalline film
09/15/2009US7588636 Method of production of silicon carbide single crystal
09/10/2009US20090223440 Method of growing GaN crystals from solution
09/10/2009DE10135574B4 Verfahren und Vorrichtung zur Fertigung von Schichtstrukturen auf Substraten mittels Flüssigphasenepitaxie Method and device for production of layer structures on substrates by liquid phase epitaxy
08/2009
08/27/2009WO2009104049A1 Silicon substrate, method and equipment for making the silicon substrate
08/20/2009DE10026319B4 Verfahren zum Herstellen einkristalliner Körper A method for producing monocrystalline body
08/12/2009CN101503825A III group nitride single crystal and semiconductor device containing the same
08/06/2009WO2009095764A1 Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
08/06/2009US20090194017 METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL
07/2009
07/30/2009WO2009093753A1 Method for manufacturing iii metal nitride single crystal
07/23/2009WO2009090536A1 Method for growing silicon carbide single crystal
07/23/2009WO2009090535A1 Method for growing silicon carbide single crystal
07/22/2009CN201276610Y Thin film drawing machine
07/09/2009US20090173273 Method and Apparatus for Producing Group III Nitride Based Compound Semiconductor
07/08/2009CN100510202C Method for preparing garnet single crystal and garnet single crystal prepared thereby
07/02/2009WO2009081687A1 Apparatus for growing nitride single crystal
07/02/2009US20090169843 Low-Defect-Density Crystalline Structure and Method for Making Same
06/2009
06/18/2009US20090155580 Production Methods of Semiconductor Crystal and Semiconductor Substrate
06/18/2009US20090151621 Hydrothermal method for preparing large single crystals of scandium, yttrium, and lanthanide sesquioxides
06/17/2009EP2071062A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal
06/10/2009EP2067884A1 III Nitride crystal substrate, and light-emitting device and method of its manufacture
06/10/2009CN100497754C Graphite boat for improving mercury cadmium telluride rheotaxy membrane surface shape
06/09/2009USRE40718 Method for producing nitride monocrystals
05/2009
05/21/2009US20090126623 Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor
05/14/2009US20090120354 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device
05/05/2009US7527869 Semiconductor devices such as light-emitting diodes, power devices, high-frequency devices, and environment-resistant devices; having i very thin metallic Si melt between monocrystal and polycrystal SiC substrates
04/2009
04/30/2009WO2007067541A3 Systems and methods for processing a film, and thin films
04/29/2009CN101421443A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device
04/29/2009CN101421442A Process for producing SiC single crystal
04/23/2009US20090101062 Method for Producing Silicon Carbide Single Crystal
04/16/2009WO2009047894A1 Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate
04/09/2009WO2009044639A1 Method for growing group iii nitride crystal
04/09/2009US20090090295 Method for growing silicon ingot
04/02/2009WO2009041053A1 Process for producing group iii element nitride crystal and apparatus for producing group iii element nitride crystal
03/2009
03/18/2009EP2037008A1 Solid-phase sheet growing substrate and solid-phase sheet manufacturing method
03/18/2009CN101387006A Film pulling-up apparatus
03/11/2009CN101384756A Process for producing zno single crystal according to method of liquid phase growth
03/04/2009CN100466178C Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate applying the group III nitride crystal
02/2009
02/25/2009CN101374980A Non-spherical semiconductor nanocrystals and methods of making them
02/12/2009US20090038538 Method for producing single crystal silicon carbide
02/03/2009US7485477 Thin plate manufacturing method and thin plate manufacturing apparatus
01/2009
01/28/2009CN101353812A Tunneling type graphite boat for semi-conducting material liquid phase epitaxial growth
01/22/2009WO2009011407A1 Method for producing group iii nitride single crystal
01/21/2009EP2017375A1 Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device
01/21/2009CN101348941A Substrate material for mercury cadmium telluride material growth by liquid phase epitaxy method and preparation thereof
01/21/2009CN100454488C Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device
01/15/2009US20090013924 Process and apparatus for producing nitride single crystal
01/07/2009EP2012373A1 Coated conductor with simplified layer architecture
01/07/2009CN101338451A Process for preparing film by liquid phase epitaxy method
01/01/2009US20090000542 Apparatus for producing nitride single crystal
01/01/2009US20090000540 Liquid-phase growth apparatus and method
01/01/2009US20090000539 Apparatus for growing a nanowire and method for controlling position of catalyst material
12/2008
12/31/2008EP2007932A1 Articles with two crystalline materials and method of making same
12/24/2008CN201169651Y Mercury cadmium telluride mother liquor synthetic apparatus
12/18/2008US20080311430 Recording Medium
12/10/2008CN101319390A Preparation method of leadless lutetium bismuth carbuncle thin film
12/10/2008CN101319380A Method for rare earth 242 phase control component growth superconducting block material
12/10/2008CN101319379A Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material
12/04/2008US20080295762 Method for control of shape and size of pb-chalcogenide nanoparticles
12/03/2008EP1997941A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
12/02/2008US7459614 Method for generating an artificially patterned substrate for stimulating the crystallation of a biomolecule thereon and method for stimulating the crystallization of biomolecules
11/2008
11/26/2008CN100437949C Method for preparing electric ferroelectric thick film by liquid phase epitaxy
11/12/2008EP1990809A1 Process for producing superconducting thin-film material, superconducting equipment and superconducting thin-film material
11/06/2008DE10026911B4 Verfahren zur Herstellung eines Halbleiter-Superatoms und eines Aggregats davon A process for producing a semiconductor superatom and an aggregate thereof
10/2008
10/29/2008EP1498518B1 Method for the production of silicon carbide single crystal
10/28/2008US7442252 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
10/23/2008WO2008125609A1 Method of controlling an epitaxial growth process in an epitaxial reactor
10/23/2008US20080257255 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same
10/16/2008US20080254580 Realization of Self-Positioned Contacts by Epitaxy
10/15/2008EP1981093A1 Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate
10/15/2008EP1654405B1 Method for treating a crystal by applying microdrops thereto
10/08/2008EP1978137A1 PROCESS FOR PRODUCING SiC SINGLE CRYSTAL
10/07/2008US7431766 Crystal-structure-processed devices, methods and systems for making
10/02/2008WO2008117571A1 Process for producing nitride single crystal
10/02/2008WO2008117564A1 Method for manufacturing nitride single crystal
10/02/2008US20080237660 Method to deposit silicon film on a substrate
10/01/2008CN101275280A Preparation for InAsSb thick film material
09/2008
09/25/2008WO2008114845A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
09/24/2008CN201121220Y Double-layer quartz capsule reactor for liquid phase epitaxy
09/18/2008WO2008111289A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal
09/17/2008EP1969164A2 Non-spherical semiconductor nanocrystals and methods of making them
09/09/2008US7422632 Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate
09/02/2008CA2622813A1 Capillary transport of nanoparticles or microparticles to form an ordered structure
08/2008
08/27/2008CN101250749A Gliding quartz boat for growth low-melting point semiconductor material
08/05/2008US7407547 Liquid-phase growth apparatus and method
07/2008
07/24/2008WO2008087791A1 Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device
07/23/2008CN101225542A Liquid-phase epitaxy graphite boat preventing boat-sticking of mother liquid
07/17/2008US20080168943 Heterostructure semiconductor nanowires and method for producing the same
07/10/2008US20080163813 Anneal of epitaxial layer in a semiconductor device
07/09/2008CN100401602C Zinc oxide bluish violet light semiconductor growth using liquid phase epitaxial method
07/08/2008US7396410 Featuring forming methods to reduce stacking fault nucleation sites
07/02/2008CN201080508Y Controllable vertical Impregnation liquid phase epitaxial film growing device
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