Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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10/22/2009 | US20090261345 Method for manufacturing compliant substrate, compliant substrate manufactured thereby, gallium nitride based compound semiconductor device having the compliant substrate and manufacturing method thereof |
10/22/2009 | US20090261255 Fluorescent material, a method of manufacturing the fluorescent material, a radiation detector using the fluorescent material, and an X-ray CT scanner |
10/14/2009 | CN101558188A Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
10/13/2009 | US7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
10/08/2009 | US20090249999 Reusable crucibles and method of manufacturing them |
10/01/2009 | WO2009119411A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same |
09/30/2009 | CN201317829Y Fixing device applied in liquid phase epitaxy of wafers |
09/23/2009 | EP2103721A1 PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS |
09/16/2009 | EP2100989A1 Method for preparing substrate having monocrystalline film |
09/15/2009 | US7588636 Method of production of silicon carbide single crystal |
09/10/2009 | US20090223440 Method of growing GaN crystals from solution |
09/10/2009 | DE10135574B4 Verfahren und Vorrichtung zur Fertigung von Schichtstrukturen auf Substraten mittels Flüssigphasenepitaxie Method and device for production of layer structures on substrates by liquid phase epitaxy |
08/27/2009 | WO2009104049A1 Silicon substrate, method and equipment for making the silicon substrate |
08/20/2009 | DE10026319B4 Verfahren zum Herstellen einkristalliner Körper A method for producing monocrystalline body |
08/12/2009 | CN101503825A III group nitride single crystal and semiconductor device containing the same |
08/06/2009 | WO2009095764A1 Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
08/06/2009 | US20090194017 METHOD FOR PRODUCING p-TYPE SiC SEMICONDUCTOR SINGLE CRYSTAL |
07/30/2009 | WO2009093753A1 Method for manufacturing iii metal nitride single crystal |
07/23/2009 | WO2009090536A1 Method for growing silicon carbide single crystal |
07/23/2009 | WO2009090535A1 Method for growing silicon carbide single crystal |
07/22/2009 | CN201276610Y Thin film drawing machine |
07/09/2009 | US20090173273 Method and Apparatus for Producing Group III Nitride Based Compound Semiconductor |
07/08/2009 | CN100510202C Method for preparing garnet single crystal and garnet single crystal prepared thereby |
07/02/2009 | WO2009081687A1 Apparatus for growing nitride single crystal |
07/02/2009 | US20090169843 Low-Defect-Density Crystalline Structure and Method for Making Same |
06/18/2009 | US20090155580 Production Methods of Semiconductor Crystal and Semiconductor Substrate |
06/18/2009 | US20090151621 Hydrothermal method for preparing large single crystals of scandium, yttrium, and lanthanide sesquioxides |
06/17/2009 | EP2071062A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
06/10/2009 | EP2067884A1 III Nitride crystal substrate, and light-emitting device and method of its manufacture |
06/10/2009 | CN100497754C Graphite boat for improving mercury cadmium telluride rheotaxy membrane surface shape |
06/09/2009 | USRE40718 Method for producing nitride monocrystals |
05/21/2009 | US20090126623 Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor |
05/14/2009 | US20090120354 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device |
05/05/2009 | US7527869 Semiconductor devices such as light-emitting diodes, power devices, high-frequency devices, and environment-resistant devices; having i very thin metallic Si melt between monocrystal and polycrystal SiC substrates |
04/30/2009 | WO2007067541A3 Systems and methods for processing a film, and thin films |
04/29/2009 | CN101421443A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device |
04/29/2009 | CN101421442A Process for producing SiC single crystal |
04/23/2009 | US20090101062 Method for Producing Silicon Carbide Single Crystal |
04/16/2009 | WO2009047894A1 Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate |
04/09/2009 | WO2009044639A1 Method for growing group iii nitride crystal |
04/09/2009 | US20090090295 Method for growing silicon ingot |
04/02/2009 | WO2009041053A1 Process for producing group iii element nitride crystal and apparatus for producing group iii element nitride crystal |
03/18/2009 | EP2037008A1 Solid-phase sheet growing substrate and solid-phase sheet manufacturing method |
03/18/2009 | CN101387006A Film pulling-up apparatus |
03/11/2009 | CN101384756A Process for producing zno single crystal according to method of liquid phase growth |
03/04/2009 | CN100466178C Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate applying the group III nitride crystal |
02/25/2009 | CN101374980A Non-spherical semiconductor nanocrystals and methods of making them |
02/12/2009 | US20090038538 Method for producing single crystal silicon carbide |
02/03/2009 | US7485477 Thin plate manufacturing method and thin plate manufacturing apparatus |
01/28/2009 | CN101353812A Tunneling type graphite boat for semi-conducting material liquid phase epitaxial growth |
01/22/2009 | WO2009011407A1 Method for producing group iii nitride single crystal |
01/21/2009 | EP2017375A1 Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device |
01/21/2009 | CN101348941A Substrate material for mercury cadmium telluride material growth by liquid phase epitaxy method and preparation thereof |
01/21/2009 | CN100454488C Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device |
01/15/2009 | US20090013924 Process and apparatus for producing nitride single crystal |
01/07/2009 | EP2012373A1 Coated conductor with simplified layer architecture |
01/07/2009 | CN101338451A Process for preparing film by liquid phase epitaxy method |
01/01/2009 | US20090000542 Apparatus for producing nitride single crystal |
01/01/2009 | US20090000540 Liquid-phase growth apparatus and method |
01/01/2009 | US20090000539 Apparatus for growing a nanowire and method for controlling position of catalyst material |
12/31/2008 | EP2007932A1 Articles with two crystalline materials and method of making same |
12/24/2008 | CN201169651Y Mercury cadmium telluride mother liquor synthetic apparatus |
12/18/2008 | US20080311430 Recording Medium |
12/10/2008 | CN101319390A Preparation method of leadless lutetium bismuth carbuncle thin film |
12/10/2008 | CN101319380A Method for rare earth 242 phase control component growth superconducting block material |
12/10/2008 | CN101319379A Method for 45 degree rare earth barium copper oxygen thin film seed high speed growth superconducting block material |
12/04/2008 | US20080295762 Method for control of shape and size of pb-chalcogenide nanoparticles |
12/03/2008 | EP1997941A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
12/02/2008 | US7459614 Method for generating an artificially patterned substrate for stimulating the crystallation of a biomolecule thereon and method for stimulating the crystallization of biomolecules |
11/26/2008 | CN100437949C Method for preparing electric ferroelectric thick film by liquid phase epitaxy |
11/12/2008 | EP1990809A1 Process for producing superconducting thin-film material, superconducting equipment and superconducting thin-film material |
11/06/2008 | DE10026911B4 Verfahren zur Herstellung eines Halbleiter-Superatoms und eines Aggregats davon A process for producing a semiconductor superatom and an aggregate thereof |
10/29/2008 | EP1498518B1 Method for the production of silicon carbide single crystal |
10/28/2008 | US7442252 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
10/23/2008 | WO2008125609A1 Method of controlling an epitaxial growth process in an epitaxial reactor |
10/23/2008 | US20080257255 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same |
10/16/2008 | US20080254580 Realization of Self-Positioned Contacts by Epitaxy |
10/15/2008 | EP1981093A1 Semiconductor light emitting element, group iii nitride semiconductor substrate and method for manufacturing such group iii nitride semiconductor substrate |
10/15/2008 | EP1654405B1 Method for treating a crystal by applying microdrops thereto |
10/08/2008 | EP1978137A1 PROCESS FOR PRODUCING SiC SINGLE CRYSTAL |
10/07/2008 | US7431766 Crystal-structure-processed devices, methods and systems for making |
10/02/2008 | WO2008117571A1 Process for producing nitride single crystal |
10/02/2008 | WO2008117564A1 Method for manufacturing nitride single crystal |
10/02/2008 | US20080237660 Method to deposit silicon film on a substrate |
10/01/2008 | CN101275280A Preparation for InAsSb thick film material |
09/25/2008 | WO2008114845A1 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS |
09/24/2008 | CN201121220Y Double-layer quartz capsule reactor for liquid phase epitaxy |
09/18/2008 | WO2008111289A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
09/17/2008 | EP1969164A2 Non-spherical semiconductor nanocrystals and methods of making them |
09/09/2008 | US7422632 Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate |
09/02/2008 | CA2622813A1 Capillary transport of nanoparticles or microparticles to form an ordered structure |
08/27/2008 | CN101250749A Gliding quartz boat for growth low-melting point semiconductor material |
08/05/2008 | US7407547 Liquid-phase growth apparatus and method |
07/24/2008 | WO2008087791A1 Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device |
07/23/2008 | CN101225542A Liquid-phase epitaxy graphite boat preventing boat-sticking of mother liquid |
07/17/2008 | US20080168943 Heterostructure semiconductor nanowires and method for producing the same |
07/10/2008 | US20080163813 Anneal of epitaxial layer in a semiconductor device |
07/09/2008 | CN100401602C Zinc oxide bluish violet light semiconductor growth using liquid phase epitaxial method |
07/08/2008 | US7396410 Featuring forming methods to reduce stacking fault nucleation sites |
07/02/2008 | CN201080508Y Controllable vertical Impregnation liquid phase epitaxial film growing device |