Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 19 - Liquid-phase epitaxial-layer growth
Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562)
10/1989
10/04/1989EP0335453A1 Process for obtaining a single crystal heteroepitaxial ternary layer on a binary layer and crucible therefor
09/1989
09/27/1989EP0334517A1 Growth of superconductor material in a fluxed melt, and article of manufacture
09/13/1989CN2044378U Liquid phase epitaxial device for gallium phosphide
09/12/1989US4865681 Growing copper chloride crystals on a silicon crystalline substrate; superconductivity
07/1989
07/18/1989US4849146 Vapor phase reaction boron halide and ammonia; uniform structure
07/13/1989WO1989006354A1 Differential ellipsometer
07/05/1989CN1033714A Epitaxial material of gallium phosphide with high luminescence efficiency
06/1989
06/06/1989US4837182 Growth mask on substrate; forming, removal sheet
05/1989
05/31/1989CN1033222A Liquid phase epitaxy method and equipment of gallium phosphide
05/30/1989US4835437 Cathode ray tube with single crystal target
05/30/1989EP0312593A4 Preparation of superconducting ceramic materials.
05/17/1989EP0316021A2 Doped and undoped single crystal multilayered structures
05/09/1989US4828648 Substrate leveling, in situ doping/annealing and gas flushing
04/1989
04/26/1989EP0312593A1 Preparation of superconducting ceramic materials
04/12/1989EP0311038A1 Process for making single-crystal mercury cadmium telluride layers
04/04/1989US4819058 Semiconductor device having a pn junction
03/1989
03/30/1989DE3731010A1 Process for liquid-phase epitaxy
03/30/1989DE3731009A1 Process and apparatus for liquid-phase epitaxy
03/28/1989US4816420 Method of producing tandem solar cell devices from sheets of crystalline material
03/07/1989US4810325 Liquid-phase-epitaxy deposition method in the manufacture of devices
12/1988
12/21/1988EP0295659A1 Process for making single-crystal mercury cadmium telluride layers
12/21/1988EP0179907B1 Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution
12/21/1988EP0179851B1 A method of synthesizing thin, single crystal layers of silver thiogallate (aggas2)
12/06/1988USH557 Epitaxial strengthening of crystals
11/1988
11/08/1988US4783426 Method of making a Group II-VI compound semiconductor device by solution growth
11/08/1988US4782785 System for producing semiconductor layer structures by way of epitaxial growth
11/03/1988WO1988008338A1 Preparation of superconducting ceramic materials
10/1988
10/25/1988US4779561 Crucible for multi-bath liquid phase epitaxy
10/04/1988US4774904 Multiple-layer growth of plural semiconductor devices
09/1988
09/28/1988EP0284434A2 Method of forming crystals
09/13/1988US4770504 Bismuth substituted rare earth metal iron garnet, lead oxide and boron oxide flux
09/07/1988EP0281187A2 Process and apparatus for producing epitaxial layers from molten solutions
09/06/1988US4768463 Boat for liquid phase epitaxial growth
08/1988
08/24/1988CN88201086U Horizontal sliding graphite boat
07/1988
07/19/1988US4758399 Substrate for manufacturing single crystal thin films
07/05/1988US4755364 Liquid phase epitaxy apparatus and method
07/05/1988US4755026 Magnetooptic garnet
06/1988
06/07/1988US4748933 Crucible for epitaxy from the liquid phase of semiconductor layers
06/07/1988US4748932 Crucible for epitaxy from the liquid phase of semiconductor layers having a "controlled" composition
05/1988
05/11/1988DE3736731A1 Epitaxiale festigkeitserhoehung von kristallen Epitaxial festigkeitserhoehung of crystals
05/04/1988EP0064514B1 Process and apparatus for growing mercury cadmium telluride layer by liquid phase epitaxy from mercury-rich melt
04/1988
04/26/1988CA1235825A1 Method of making magnetic bubble devices containing bismuth-containing garnet films
04/05/1988US4735396 Replica pattern of monocrystalline cleavage plane; solar cells
03/1988
03/15/1988CA1234036A1 Lpe growth on group iii-v compound semiconductor substrates containing phosphorus
03/03/1988DE3628673A1 Process and device for coating substrates with a plurality of layers
03/02/1988EP0049286B1 Methods of producing sheets of crystalline material and devices amde therefrom
02/1988
02/23/1988US4727047 Separable from a reusable substrate
02/03/1988EP0160701B1 Lpe growth on group iii-v compound semiconductor substrates containing phosphorus
02/02/1988CA1232184A1 Rapid lpe crystal growth
01/1988
01/07/1988EP0250769A2 Process for the epitaxial deposition of thin films of pseudo-binary single-crystalline semiconductor material on single-crystalline substrates
01/05/1988US4717630 Substrate for manufacturing single crystal thin films
12/1987
12/09/1987EP0248212A2 Magnetic device and method of manufacture
12/03/1987WO1987007313A1 Epitaxial growth
11/1987
11/17/1987US4706604 Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride
11/17/1987CA1229291A1 Liquid phase epitaxy apparatus
10/1987
10/27/1987US4702781 Liquid phase epitaxial growth method
10/14/1987EP0241066A1 Multiple-melt boat for liquid epitaxy
10/06/1987US4698820 Neodymium, praseodymium, iron garnets; lasers
10/06/1987US4697543 Liquid phase epitaxy slider/stator assembly having non-wetting growth well liners
09/1987
09/08/1987US4692194 Method of performing solution growth of a GaAs compound semiconductor crystal layer under control of conductivity type thereof
09/01/1987US4690841 Pyrolytic boron nitride article
09/01/1987US4690726 Liquid phase epitaxial growth of bismuth-containing garnet films
08/1987
08/27/1987DE3605973A1 Liquid-phase epitaxial arrangement
08/19/1987EP0232586A2 Cathode ray tube with single crystal targets
08/11/1987US4686142 Process for the production of iron oxides epitaxially coated with cobalt the coated oxides and their cue
08/11/1987US4685979 Method of manufacturing a group II-VI compound semiconductor device having a pn junction
07/1987
07/14/1987CA1224120A1 Method of and apparatus for producing a controlled unsaturated vapour pressure of a volatile liquid in a heat treatment chamber, a method of growing a layer of a substance on a substrate by a liquid epitaxy growth process, and to a method of annealing a
07/01/1987EP0227125A1 Vessel for the liquid-phase epitaxy of semiconductor films
05/1987
05/20/1987EP0222438A1 Vessel for the liquid-phase epitaxy of semiconductor films with a controlled composition
05/05/1987US4662983 Multiple meltback procedure for LPE growth on InP
03/1987
03/05/1987DE3530999A1 Process for fabricating semiconductor arrangements
02/1987
02/10/1987US4642142 Mercury vapor
02/03/1987CA1217410A1 Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound
01/1987
01/28/1987EP0209755A2 Magnetooptic garnet
01/08/1987DE3615836A1 Method for inductive heating of materials in the form of wafers
12/1986
12/30/1986US4633030 Photovoltaic cells on lattice-mismatched crystal substrates
12/16/1986US4629532 Semiconductor lasers
12/16/1986US4629519 Contacting with saturated solution of magnesium compound
11/1986
11/25/1986US4624901 Single crystals, nonmagnetic
11/04/1986US4620897 Method for growing multicomponent compound semiconductor crystals
11/04/1986US4620854 Method of preparing indium ingots
10/1986
10/28/1986US4619718 Method of manufacturing a Group II-VI semiconductor device having a PN junction
09/1986
09/30/1986US4614672 Liquid phase epitaxy (LPE) of silicon carbide
09/30/1986CA1212018A1 Method of performing solution growth of group iii-v compound semiconductor crystal layer under control of conductivity type thereof
09/30/1986CA1212017A1 Apparatus for performing solution growth relying on temperature difference technique
09/17/1986EP0194495A1 Method of producing sheets of crystalline material
09/10/1986EP0193830A2 Solar cell device incorporating plural constituent solar cells
09/10/1986EP0192280A3 Method of producing sheets of crystalline material
09/03/1986EP0193192A2 Pyrolytic boron nitride article and method for producing the same
09/02/1986US4609411 Liquid-phase epitaxial growth method of a IIIb-Vb group compound
08/1986
08/27/1986EP0192280A2 Method of producing sheets of crystalline material
08/20/1986EP0191505A2 Method of producing sheets of crystalline material
08/20/1986EP0191504A2 Method of producing sheets of crystalline material
08/20/1986EP0191503A2 Method of producing sheets of crystalline material
07/1986
07/29/1986US4602592 Apparatus for carrying out liquid phase epitaxy growth
07/22/1986US4601888 Protection of semiconductor substrates during epitaxial growth processes
07/01/1986US4597823 Rapid LPE crystal growth
06/1986
06/10/1986US4594128 Substrate contacts solution in channel whose wall temperature is ccontrolled by heat exchan&ing
06/10/1986US4594126 Growth of thin epitaxial films on moving substrates from flowing solutions
06/03/1986US4592791 Indium phosphide substrate; growing an aluminum, indium arsenic intermetallic by liquid phase epitaxy
1 ... 3 4 5 6 7 8 9 10 11 12 13 14 15 16