| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 05/19/1999 | EP0916748A1 Single crystal layers of lanthanum magnesium aluminate (LMA), process for their growth by liquid phase epitaxy and optical components comprising these layers |
| 05/12/1999 | EP0795049B1 Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 04/27/1999 | US5898516 Having bismuth-substituted iron garnet single crystal |
| 02/18/1999 | WO1999007923A1 Liquid phase epitaxy through a porous material |
| 02/09/1999 | US5868837 Low temperature method of preparing GaN single crystals |
| 12/16/1998 | CN1041224C Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
| 12/08/1998 | US5846319 Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth |
| 11/26/1998 | WO1998053123A1 Epitaxy boat and method for liquid phase epitaxial deposit of cdhgte |
| 10/07/1998 | EP0869562A1 Production method of oxide superconductive film |
| 10/06/1998 | US5817172 Preparation of oxide crystals |
| 09/02/1998 | CN1192055A Method of producing semiconductor member and method of producing solar cell |
| 07/28/1998 | US5785752 Measuring temperature of crystal; cutting to thickness |
| 07/14/1998 | US5778960 Method for providing an extension on an end of an article |
| 07/01/1998 | EP0851513A2 Method of producing semiconductor member and method of producing solar cell |
| 07/01/1998 | EP0851043A1 Optical single crystal film, process for producing the same and optical element comprising the same |
| 06/09/1998 | US5763055 Optical single crystalline articles and optical elements using such optical single crystalline articles |
| 06/02/1998 | US5759267 Liquid phase epitaxial |
| 05/26/1998 | US5756225 Single crystal oxide turbine blades |
| 01/27/1998 | US5712199 Solar cell |
| 12/10/1997 | EP0811851A2 Faraday rotator having a rectangular shaped hysteresis |
| 12/10/1997 | CN1167511A Epitaxial growth of silicon carbide and resulting silicon carbide structure |
| 12/03/1997 | EP0810306A2 Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder |
| 11/04/1997 | US5683506 Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength |
| 10/29/1997 | CN2265987Y Vacuum liquid source with three chamber structure |
| 10/21/1997 | US5679153 Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 09/17/1997 | EP0795049A1 Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 09/02/1997 | US5662740 Process for producing thin film by epitaxial growth |
| 07/23/1997 | EP0785454A1 Faraday rotator for magneto-optic sensors |
| 07/22/1997 | US5650006 Supercooling |
| 07/01/1997 | US5643688 Optoelectric articles and a process for producing the same |
| 05/06/1997 | US5627142 Method of producing composite metal oxide material |
| 04/17/1997 | WO1997013891A1 METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
| 04/16/1997 | EP0768393A1 Optical single crystalline articles and optical elements using such optical single crystalline articles |
| 04/01/1997 | US5616176 Oxide garnet single crystal |
| 02/18/1997 | US5603762 Epitaxial growth |
| 02/18/1997 | US5603761 Liquid phase epitaxial growth method for carrying out the same |
| 12/24/1996 | US5587015 Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
| 12/05/1996 | DE19530982C1 Apparatus for producing uniform liquid flow in high temperature liquid |
| 11/12/1996 | US5573862 Single crystal oxide turbine blades |
| 10/15/1996 | US5565131 Magnetic optical isolator |
| 10/02/1996 | EP0735599A2 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer |
| 08/27/1996 | US5549747 Method of producing sheets of crystalline material and devices made therefrom |
| 08/13/1996 | US5544616 Crystallization from high temperature solutions of Si in Cu/Al solvent |
| 08/07/1996 | CN2232448Y Red luminous gallic phosphide liquid-phase epitaxial-layer boat |
| 07/23/1996 | US5539569 Optoelectric articles and a process for producing the same |
| 07/16/1996 | US5535699 Method of making II-VI semiconductor infrared light detector |
| 06/06/1996 | WO1996017112A1 Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 05/21/1996 | US5517942 Process for producing optoelectric articles |
| 05/07/1996 | US5513593 Liquid-phase heteroepitaxy method |
| 04/30/1996 | US5512193 Low saturated magnetic field bismuth-substituted rare earth iron garnet single crystal and its use |
| 04/17/1996 | EP0707096A2 Articles comprising a substrate made of single crystal and a process for producing the same |
| 04/17/1996 | CN1120604A Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
| 04/02/1996 | US5503103 Method and apparatus for producing crystalline layers |
| 03/19/1996 | US5500390 Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique |
| 03/06/1996 | EP0699783A2 A method of liquid phase epitaxial growth and apparatus therefor |
| 02/21/1996 | CN1031087C Method of improved solution growth of silicon film |
| 01/09/1996 | US5482555 Liquid-phase epitaxy growth system and method for growing epitaxial layer |
| 01/03/1996 | EP0690153A1 Oxide garnet single crystal |
| 01/03/1996 | EP0690152A2 Process and apparatus for the production of films of oxide type single crystal |
| 12/20/1995 | EP0687752A1 Method for control of Si concentration in gallium phosphide single crystal layer |
| 11/29/1995 | EP0684325A1 Low saturated magnetic field bismuth-substituted rare earth iron garnet single crystal and its use |
| 11/15/1995 | EP0547061B1 M1-xNxTiAs1-aPaO5 WAVEGUIDES GROWN BY LIQUID PHASE EPITAXY |
| 10/11/1995 | EP0676492A1 Apparatus for production of single crystal oxide films by liquid-phase epitaxy |
| 10/11/1995 | EP0676491A1 A process for producing optoelectronic articles |
| 10/11/1995 | EP0676490A1 Optoelectric articles and a process for producing the same |
| 09/27/1995 | EP0674027A1 Optoelectric articles and a process for producing the same |
| 09/12/1995 | US5449942 For microwave device |
| 07/26/1995 | EP0664350A1 Process and device for the production of crystalline films |
| 07/18/1995 | US5434101 Process for producing thin film by epitaxial growth |
| 07/12/1995 | EP0662698A1 Faraday rotator for optical isolator |
| 06/15/1995 | WO1995016269A1 Ferromagnetic material and method of manufacturing the same |
| 04/18/1995 | US5407906 Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure |
| 04/18/1995 | US5407858 Forming n-type and p-type gallium phosphide layers doped with zinc and oxygen on a single crystal substrate by liquid phase epitaxial growth at controlled temperatures |
| 02/07/1995 | CA1334275C Growth of superconductor material in a fluxed melt, and article of manufacture |
| 02/01/1995 | EP0636714A1 Composite metal oxide material |
| 12/27/1994 | US5375557 High pressure liquid phase epitaxy reactor chamber with direct see through capability |
| 11/30/1994 | CN1026823C M1-xNxTiAS1-aPaO5 waveguides grown by liquid phase epitaxy |
| 11/29/1994 | CA1333248C Method of forming crystals |
| 11/22/1994 | US5366552 Apparatus for liquid-phase epitaxial growth |
| 11/08/1994 | US5362683 Cutting through single crystal semiconductor wafers which have growth layers on both surfaces |
| 10/25/1994 | US5357898 Method of producing single crystal and apparatus therefor |
| 10/19/1994 | EP0620601A2 A GaP red light emitting element substrate and methods of manufacturing it |
| 08/02/1994 | US5334278 Controlling solution concentration by proper temperature profile |
| 07/05/1994 | US5326719 Semiconductors with metals |
| 06/14/1994 | US5320907 Crystal article and method for forming same |
| 06/14/1994 | US5320736 Method to electrochemically deposit compound semiconductors |
| 05/24/1994 | US5315432 Thin film of lithium niobate single crystal |
| 05/24/1994 | US5314869 Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy |
| 05/24/1994 | US5314571 Crystallization from high temperature solutions of Si in copper |
| 04/12/1994 | US5302839 Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon |
| 03/01/1994 | US5291576 Lithium niobate thin film with sodium and magnesium diffused; lithium tantalate single crystal substrate |
| 02/01/1994 | CA1326624C Liquid-phase-epitaxy deposition method in the manufacture of devices |
| 01/26/1994 | EP0580019A1 Oriented polycrystalline thin films of transition metal chalcogenides |
| 01/11/1994 | US5277845 Rare earth epitaxial wafer |
| 01/11/1994 | US5277746 High pressure liquid phase epitaxy reactor chamber and method with direct see through capability |
| 11/25/1993 | WO1993023591A1 CRYSTALLIZATION FROM HIGH-TEMPERATURE SOLUTIONS OF Si IN COPPER |
| 11/23/1993 | US5264190 One melt |
| 10/19/1993 | US5254211 Method for forming crystals |
| 10/19/1993 | US5254172 Rotating furnace tube having a non-rotating slidable work holder for processing semiconductor substrates |
| 09/08/1993 | EP0559412A1 Process for producing thin film by epitaxial growth |