| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 09/02/1993 | DE4206374A1 Substrate holder for liq. and gas phase epitaxy - comprises holding place for substrate and contg. intermediate plate |
| 09/02/1993 | DE4206373A1 Liq. phase epitaxy appts. - comprises several walls enclosing melt and boundary wall bordering growing plane |
| 09/01/1993 | EP0478710B1 Hollow silver halide grains and process for the preparation thereof |
| 08/10/1993 | US5234534 Pretreatment of holding the substrate and a solution in a mixture of 80% hydrogen and an inert gas; before starting changing to a 60% hydrogen mixture |
| 07/31/1993 | CA2060362A1 Deposition of highly oriented ptfe films and uses therefor |
| 06/29/1993 | US5223079 Forming thin liquid phase epitaxial layers |
| 06/29/1993 | CA1319588C Method of making single-crystal mercury cadmium telluride layers |
| 06/24/1993 | DE4242555A1 Compsn. for preparing film |
| 06/23/1993 | EP0547061A1 M 1-x?N x?TiAs 1-a?P a?O 5? WAVEGUIDES GROWN BY LIQUID PHASE EPITAXY. |
| 05/18/1993 | US5212446 Garnet |
| 05/11/1993 | US5209917 Lithium niobate single crystal thin film and production method thereof |
| 03/18/1993 | WO1993005206A1 Method and apparatus for manufacturing multilayer epitaxial growth crystal |
| 03/10/1993 | EP0531236A2 Improved superconductive layer on monocrystalline substrate and process for its preparation |
| 03/07/1993 | CA2076279A1 Superconductive layer on monocrystalline substrate and process for its preparation |
| 02/16/1993 | US5186866 Oxide garnet single crystal |
| 02/03/1993 | EP0525619A1 Compound semiconductor single crystal |
| 02/03/1993 | EP0525617A2 Liquid-phase growth process of compound semiconductor |
| 01/26/1993 | CA1313107C Growth of semi-insulating indium phosphide by liquid phase epitaxy |
| 01/07/1993 | EP0521527A2 Magnetic garnet single crystal for measuring magnetic field intensity and optical type magnetic field intensity measuring apparatus |
| 01/06/1993 | CA2073129A1 Magnetic garnet single crystal for measuring magnetic field intensity and optical type magnetic field intensity measuring apparatus |
| 12/29/1992 | US5174854 Crystal growth of group II-VI compound semiconductor |
| 12/16/1992 | EP0518332A1 Method and apparatus for liquid-phase epitaxial growth |
| 12/08/1992 | US5169608 Porous Container having pores filled with amorphous carbon and diamond for hermetic sealing |
| 12/02/1992 | EP0515682A1 Thin film of lithium niobate single crystal |
| 11/10/1992 | US5162297 Liquid phase epitaxial growth of high temperature superconducting oxide wafer |
| 11/03/1992 | US5160401 For use as substrates for high temperature superconducting films |
| 10/28/1992 | EP0510621A2 Magneto-optical element and magnetic field measurement apparatus |
| 09/30/1992 | EP0506146A2 Method of producing sheets of crystalline material |
| 09/30/1992 | EP0505994A1 Semiconductor substrate processing apparatus |
| 07/23/1992 | WO1992012278A1 Method to electrochemically deposit compound semiconductors |
| 07/15/1992 | CN1017486B Liquid phase epitaxy isoelectron doping process |
| 07/14/1992 | US5130270 Closed melt boat |
| 07/01/1992 | EP0470130A4 Liquid phase epitaxy |
| 06/17/1992 | DE4039829A1 Thin defect-free epitaxial semiconductor layer mfr. - by liq. phase epitaxy of supersaturated melt, moved over substrate in heated reaction chamber of sliding member with rectangular lower opening |
| 06/17/1992 | DE4039828A1 Device for holding a semiconductor substrate base - is formed as three or multi point arrangement from a multi jaw chuck with adjustable clamping jaws etc. |
| 06/11/1992 | WO1992009917A1 Thin film of lithium niobate single crystal |
| 05/20/1992 | EP0485537A1 METHOD FOR OBTAINING GaAs FLAT SURFACES |
| 05/07/1992 | DE4134261A1 Semiconductor layers, for use in solar cells, grown on flexible tape - using crystallisation from solvent in small, unconnected areas on the tape to give single crystalline regions in a continuous process |
| 04/21/1992 | US5106763 Hollow crystalline body is grown from melt; diffusion of dopant |
| 03/19/1992 | WO1992004649A1 M1-xnxtias1-apao5 waveguides grown by liquid phase epitaxy |
| 03/18/1992 | CN1059603A M-nxtiasi-apao5 waveguides grown by liquid phase epitaxy |
| 02/12/1992 | EP0470130A1 Liquid phase epitaxy |
| 02/04/1992 | CA1295405C Semiconductor light emitting device |
| 01/28/1992 | US5084248 Apparatus for growing a compound semiconductor crystal |
| 01/14/1992 | US5080752 Consolidation of diamond packed powders |
| 12/31/1991 | US5077271 Liquid phase epitaxial method for forming single crystal films of high temperature oxide superconductors |
| 12/17/1991 | CA1293179C Interrupted liquid phase epitaxy process |
| 11/26/1991 | US5068516 Device for liquid-phase thin film epitaxy |
| 11/12/1991 | US5064780 Epitaxial growth improved by placing substrate on the surface of the solution |
| 11/05/1991 | US5063518 Alarm system for a crystal growing furnace |
| 10/29/1991 | US5061072 Differential ellipsometer |
| 10/17/1991 | WO1991015361A1 METHOD FOR OBTAINING GaAs FLAT SURFACES |
| 10/15/1991 | US5057487 Crystal growth method for Y-Ba-Cu-O compounds |
| 10/08/1991 | US5055445 Immersing substrate in oxide melt containing flux, cooling |
| 09/04/1991 | EP0444209A1 Thin film of lithium niobate single crystal and production thereof |
| 08/14/1991 | EP0441429A2 Process for growing mixed crystals from multi-component oxide melts |
| 08/13/1991 | US5039653 Growth of superconductor material in a fluxed melt, and article of manufacture |
| 08/13/1991 | US5039187 M1-x Nx TiAs1-a Pa O5 waveguides grown by liquid phase epitaxy and process of making same |
| 07/17/1991 | CN1053146A Mixed matter epitaxy on gallium arsenide substrate |
| 07/03/1991 | CN2080070U Verticle multi-plate extruding liquid extension graphite boat |
| 06/05/1991 | CN1052005A Liquid phase epitaxy isoelectron doping process |
| 06/04/1991 | US5021224 Conducts direct current from electrode immersed in growth solution containing source material |
| 05/07/1991 | US5012935 Support frame for supporting a semiconductor wafer carrier |
| 04/30/1991 | US5011564 Epitaxial growth |
| 04/04/1991 | WO1991004360A1 Thin film of lithium niobate single crystal and production thereof |
| 04/02/1991 | US5004723 Melting oxides of bismuth, calcium, strontium, thallium, contacting with magnesium oxide substrate, cooling |
| 02/26/1991 | US4996436 Automatic apparatus for controlling the size of wafer-supporting boats |
| 01/23/1991 | EP0409691A2 Oxide garnet single crystal |
| 01/15/1991 | CA1278984C Crucible for epitaxy from the liquid phase of semiconductor layers having a "controlled" composition |
| 12/27/1990 | WO1990016013A1 Hollow silver halide grains and process for the preparation thereof |
| 12/22/1990 | CA2018776A1 Hollow silver halide grains and process for the preparation thereof |
| 11/27/1990 | CA1276860C Crucible for epitaxy from the liquid phase of semiconductor layers |
| 11/06/1990 | US4968491 Zinc selenide semiconductors |
| 10/31/1990 | EP0394826A2 Liquid crystal epitaxial growing method and apparatus therefor |
| 10/27/1990 | WO1990012905A1 Liquid phase epitaxy |
| 10/27/1990 | CA2053871A1 Liquid phase epitaxy |
| 09/12/1990 | EP0387164A1 Automatic apparatus for measuring dimensions of thin slab support structures |
| 09/12/1990 | CN1009601B Epitaxial material of gallium phosphide with high luminescence efficiency |
| 08/30/1990 | DE4005542A1 Carrier frame for semiconductor wafer holder - has stop cooperating with bottom edge of semiconductor wafer |
| 08/08/1990 | EP0381051A1 Growth of solidified films, particularly semiconductors, from melts using a substrate with a profiled surface |
| 08/08/1990 | EP0380843A2 The preparation of superconducting epitaxial film using the method of liquid-phase epitaxial growth |
| 07/31/1990 | US4944811 Optical fibers |
| 07/27/1990 | CA2005601A1 Substrates provided with a structured surface for growing solidifying layers from melts |
| 07/03/1990 | US4938166 Device for growing multi-layer crystals employing set of masking elements with different aperature configurations |
| 06/27/1990 | CN1008575B Liquid phase epitaxy method and equipment of gallium phosphide |
| 06/19/1990 | CA1270425A1 Magnetooptic garnet |
| 05/23/1990 | EP0369574A2 An improved method of fabricating solar cells |
| 05/16/1990 | EP0368483A2 Magneto-optical material |
| 04/19/1990 | DE3834930A1 Sliding crucible for liquid-phase epitaxial growth |
| 04/18/1990 | EP0364139A1 Crystal article and method for forming same |
| 04/17/1990 | US4918029 Method for liquid-phase thin film epitaxy |
| 04/17/1990 | US4917757 Method of performing solution growth of ZnSe crystals |
| 04/10/1990 | US4916052 Hollow silver halide grains and process for the preparation thereof |
| 03/06/1990 | US4906325 Method of making single-crystal mercury cadmium telluride layers |
| 01/24/1990 | EP0179852B1 Doped and undoped single crystal multilayered structures |
| 01/16/1990 | US4893909 Magneto-optical light switching element and method of manufacturing same |
| 12/06/1989 | EP0344904A2 Growth of semi-insulating indium phosphide by liquid phase epitaxy |
| 11/08/1989 | CN1037050A Method of improved solution growth of silicon film |
| 10/19/1989 | DE3908156A1 Solution of silicon in a metal, coating process and silicon thin film obtainable in accordance with the process |
| 10/10/1989 | US4872943 Epitaxial growth from super-saturated solution of cadmium and mercury in tellurium; controlling temperature also controls concentration |