Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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09/21/1982 | US4350116 Holder for liquid phase epitaxial growth |
08/31/1982 | US4347097 Method and apparatus for producing a multilayer semiconductor device utilizing liquid growth |
08/10/1982 | US4343674 Monitoring indium phosphide surface composition in the manufacture of III-V |
08/05/1982 | EP0049286A4 Methods of producing sheets of crystalline material and devices amde therefrom. |
07/27/1982 | US4341590 Liquid phase epitaxial, air bubble entrapment between two substrates |
07/13/1982 | US4339302 Semiconductor materials |
07/13/1982 | US4338877 Apparatus for making semiconductor devices |
06/08/1982 | US4333991 Magnetic garnet film and manufacturing method therefor |
06/08/1982 | US4333989 Sapphire single crystal substrate consisting essentially of Ga2 O.sub.3 |
06/08/1982 | US4333792 Enhancing epitaxy and preferred orientation |
05/27/1982 | WO1982001671A1 Process and apparatus for growing mercury cadmium telluride layer by liquid phase epitaxy from mercury-rich melt |
05/18/1982 | CA1123967A1 Method for the epitaxial deposition of several layers |
04/14/1982 | EP0049286A1 Methods of producing sheets of crystalline material and devices amde therefrom. |
04/07/1982 | EP0048872A1 Apparatus for use in liquid-phase epitaxy |
04/06/1982 | US4323618 Single crystal of calcium-gallium germanium garnet and substrate manufactured from such a single crystal and having an epitaxially grown bubble domain film |
03/30/1982 | US4322454 Process for regulating to desired values the dimensions of the bubbles of magnetic bubble elements |
03/02/1982 | US4317689 Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution |
02/23/1982 | CA1118666A1 Method for forming a liquid phase epitaxial film on a wafer |
02/16/1982 | US4315796 Crystal growth of compound semiconductor mixed crystals under controlled vapor pressure |
02/16/1982 | US4315477 Semi-open liquid phase epitaxial growth system |
01/27/1982 | EP0044373A1 Growth of single-crystal magnetoplumbite |
01/20/1982 | EP0043890A1 Growth of single-crystal 2PbO Fe203 |
01/12/1982 | CA1116312A1 Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy |
01/05/1982 | US4308820 Apparatus for epitaxial crystal growth from the liquid phase |
12/29/1981 | US4307680 Growth of semiconductor compounds |
11/11/1981 | EP0039463A1 Magnetic garnet film and manufacturing method therefor |
11/03/1981 | US4298410 Method for growing a liquid phase epitaxial layer on a semiconductor substrate |
10/20/1981 | US4295988 Magneto-optic Bi1 Lu2 Fe5 O12 crystals |
10/15/1981 | WO1981002948A1 Methods of producing sheets of crystalline material and devices made therefrom |
10/06/1981 | US4293372 Growth of single-crystal magnetoplumbite |
10/06/1981 | US4293371 Method of making magnetic film-substrate composites |
09/29/1981 | US4292374 Sapphire single crystal substrate for semiconductor devices |
09/29/1981 | US4292373 Layer having a more homogeneous crystal structure with that of dielectric; stress releiving |
09/29/1981 | US4292119 Growth of single-crystal 2PbO.Fe2 O3 |
09/22/1981 | US4290843 Epitaxial growth of magnetic memory film on implanted substrate |
09/15/1981 | US4289570 Seed and method for epitaxial solidification |
09/08/1981 | US4287848 Stackable graphite boats |
09/02/1981 | EP0034982A1 Process for preparing homogeneous films of Hg1-xCdxTe |
08/25/1981 | US4285911 Device for growing a crystalline layer on a substrate |
08/11/1981 | US4283247 Liquid phase epitaxial process for magnetic garnet |
07/07/1981 | US4277519 Avoiding defects common to batch processing |
06/16/1981 | US4273610 Method for controlling the resonance frequency of yttrium iron garnet films |
06/16/1981 | US4273609 Rinse melt for LPE crystals |
06/16/1981 | US4273608 Spinning, melting, directional solidification |
06/02/1981 | US4270973 Growth of thallium-doped silicon from a tin-thallium solution |
05/19/1981 | US4268327 Liquid phase |
05/05/1981 | US4265980 Lithium molybdate and yttrium or a rare earth molybdate |
04/21/1981 | US4263065 Semi-open liquid phase epitaxial growth system |
04/21/1981 | US4263064 Method of liquid phase epitaxial growth |
04/15/1981 | EP0027073A1 Process for regulating the dimensions of bubbles in magnetic bubble elements |
04/14/1981 | US4261770 Displacement of bead growth from substrate toward container clad with same material |
04/08/1981 | EP0026325A1 A wafer holder for use in growing liquid phase epitaxial films on wafers |
03/31/1981 | US4258647 Apparatus for manufacturing multi-layered semiconductor elements by means of liquid-phase epitaxy |
03/25/1981 | EP0025668A1 Process for purifying group III elements and epitaxial growth of semiconductor compounds |
01/28/1981 | EP0023063A1 A single crystal of rare earths-gallium-garnet and thin film arrangement with a single garnet substrate |
01/27/1981 | US4247360 Conveying, rotation, loops |
01/06/1981 | US4243697 Hexagonal barium hexaferrate single crystals grown on spinel substrate |
01/06/1981 | US4243472 Method for liquid phase epitaxy multiple dipping of wafers for bubble film growth |
12/23/1980 | CA1092006A1 Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
12/09/1980 | US4238252 Process for growing indium phosphide of controlled purity |
12/02/1980 | US4236947 Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon |
11/25/1980 | US4235663 Oxides of bismuth, germanium, gallium and group 2a |
11/25/1980 | US4235191 Apparatus for depositing materials on stacked semiconductor wafers |
11/25/1980 | CA1090458A1 Manufacture of gaas - gaaias semiconductor devices |
11/11/1980 | US4233338 Processes for deposition of thin films of crystalline silicon on graphite |
11/04/1980 | CA1089114A1 Method of producing a dielectric of two-layer construction |
10/14/1980 | US4227962 Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence |
08/19/1980 | US4218269 Method for the epitaxial deposition of several layers |
07/29/1980 | US4214550 Apparatus for the deposition of a material from a liquid phase |
07/08/1980 | US4211821 Monocrystalline like layers, processes of manufacturing such layers, and articles comprising such layers |
05/14/1980 | EP0010920A1 Liquid phase epitaxial process |
04/29/1980 | US4200484 Method of fabricating multiple layer composite |
04/08/1980 | US4197273 Apparatus for controlling the directional solidification of a liquid-solid system |
04/08/1980 | CA1075374A1 Semiconductor isolation method |
02/26/1980 | US4190683 Method for forming a liquid phase epitaxial film on a wafer |
02/19/1980 | US4189521 Epitaxial growth of M-type hexagonal ferrite films on spinel substrates and composite |
02/19/1980 | CA1072220A1 Method for epitaxial growth of thin semiconductor layer from solution |
01/29/1980 | US4186045 Method of epitaxial growth employing electromigration |
01/22/1980 | US4184897 Droplet migration doping using carrier droplets |
12/18/1979 | US4179317 Liquid phase epitaxial growth, group iii-v crystals, two element single crystal substrate |
07/24/1979 | CA1058827A1 Method of preparing galliumphosphide |
07/10/1979 | US4160682 Depositing materials on stacked semiconductor wafers |
07/03/1979 | US4159694 Apparatus for depositing epitaxial semiconductor from the liquid phase |
06/26/1979 | US4159215 Aluminum carrier, antimony dope, temperature gradient zone melting |
06/26/1979 | CA1057171A1 Electrical contact for peltier-induced liquid phase epitaxy on gallium compounds |
06/05/1979 | CA1055818A1 Isothermal growth of bubble domain garnet films |
05/30/1979 | EP0002080A1 Method for the epitaxial deposition of several layers and devices, in particular a semiconductor laser device made by this method |
05/29/1979 | CA1055367A Liquid phase epitaxy technique for reducing edge growth |
05/22/1979 | CA1054904A1 Method of making a liquid phase epitaxial layer of gallium phosphide |
05/01/1979 | US4152194 Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt |
04/17/1979 | US4149914 Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy |
03/27/1979 | CA1051325A1 Liquid phase epitaxial growth |
03/20/1979 | CA1050862A1 Magnetic bubble devices and garnet films therefor |
03/06/1979 | US4142924 Fast-sweep growth method for growing layers using liquid phase epitaxy |
01/30/1979 | US4137107 Method of manufacturing a semiconductor device utilizing selective masking, deposition and etching |
01/30/1979 | CA1047655A1 Manufacture of semiconductor films made from the liquid phase |
01/16/1979 | CA1046647A1 Amphoteric hetero junction |
01/10/1979 | EP0000123A1 Method for growing monocrystalline layers from the liquid phase by the sliding boat system. |
01/09/1979 | US4133705 Method for the epitaxial deposition of a semiconductor material by electrical polarization of a liquid phase at constant temperature |
12/05/1978 | US4128440 Liquid phase epitaxial method of covering buried regions for devices |